JPS60100676A - Formation of deposited film - Google Patents
Formation of deposited filmInfo
- Publication number
- JPS60100676A JPS60100676A JP58208814A JP20881483A JPS60100676A JP S60100676 A JPS60100676 A JP S60100676A JP 58208814 A JP58208814 A JP 58208814A JP 20881483 A JP20881483 A JP 20881483A JP S60100676 A JPS60100676 A JP S60100676A
- Authority
- JP
- Japan
- Prior art keywords
- deposited film
- silicon
- atom
- atoms
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、電気的、光、熱的エネルギーを利用して、光
導電膜半導体膜あるいは、絶縁性の膜を所定の支持体上
に形成させる堆積膜形成法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a deposited film forming method for forming a photoconductive film, a semiconductor film, or an insulating film on a predetermined support using electrical, optical, or thermal energy. It is.
従来、SiL + 5i2Ha + S3几、モS i
H2→4゜(−8iL + s +S iL +a等の
シランガスを光、熱エネルギー等の励起エネルギーによ
り分解して、支持体上にa−8i膜を形成させている。Conventionally, SiL + 5i2Ha + S3, Mo Si
Silane gas such as H2→4° (-8iL + s + S iL +a) is decomposed by excitation energy such as light or thermal energy to form an a-8i film on the support.
しかし、これらの一連のシラン化合物は、空気中の酸素
により爆発的に燃焼し、取り扱いが非常に難しいという
問題点があった。However, these series of silane compounds have the problem that they are explosively combusted by oxygen in the air and are extremely difficult to handle.
本発明は前記の問題点を解決し、かつ、原料ガスの分解
エネルギーが従来のシランガスの分子J↑エネルギーと
同等であるような原料ガスを見い出すことを目的として
いる。The present invention aims to solve the above-mentioned problems and to find a raw material gas whose decomposition energy is equivalent to the molecular J↑ energy of conventional silane gas.
本発明の池の目的は、大面積、厚膜の堆積膜の形成にあ
っても電気的、光学的特性の均一性、品質の安定性を確
保した高品質の堆積膜を作製することのできる方法を提
供すること′にある。The purpose of the pond of the present invention is to be able to produce a high-quality deposited film that ensures uniformity of electrical and optical properties and stability of quality even when forming a large-area, thick deposited film. The purpose is to provide a method.
かかる不発明の目的は、光または熱エネルギーにより分
解される原料ガスとして、シリコン原子数が2個以上結
合しているシラン化合物で、一般式−CaHbXc (
ただし、aは正の整数、b。The purpose of this invention is to provide a silane compound having two or more bonded silicon atoms, which has the general formula -CaHbXc (
However, a is a positive integer, and b.
Cは同時に0ではない、0または正の整数、b+c=2
a+1、Xはハロゲン原子)で表わされる置換基(以下
Aと略記)を少なくとも1個有し、かつ、水素原子とハ
ロゲン原子のすくなくともどちらか一方を含み、かつ両
端のシリコン原子の少なくとも1個は、シリコン原子と
の結合の他に水素原子とハロゲン原子のすくなくともど
ちらか一方とのみ結合しているシラン化合物(SiA
)を利用することによって達成されることが見い出され
た。C is not 0 at the same time, 0 or a positive integer, b+c=2
a+1, X is a halogen atom), and contains at least one of a hydrogen atom and a halogen atom, and at least one of the silicon atoms at both ends is , a silane compound (SiA
) was found to be achieved by using.
すなわち本発明は、堆積室内にシラン化合物(SiA
)をガス状態で導入し、該ガスに光、熱エネルギー等を
与えて該堆積室内に債かれた支持体上に堆積膜を形成す
ることを特徴とする堆積膜の形成法である。That is, the present invention provides a method in which a silane compound (SiA
) is introduced in a gaseous state and the gas is irradiated with light, thermal energy, etc. to form a deposited film on a support fixed in the deposition chamber.
以下第1図を参照しつつ、本発明の方法につき詳細に説
明する。The method of the present invention will be explained in detail below with reference to FIG.
シラン化合物(SiA )は導入パイプ1を通じて気化
装置2に於いてガス化され、マスフローメーター3を通
して常圧または減圧下にある堆積室内へ導入される。堆
積室内に導入されたガス伏のシラン化合物(SiA )
は光、加熱、グロー放電等によって光分解、熱分解、放
電分解を起こして、例えば、アルミニウムの円筒からな
る所定の支持体7上ga−8tの光導電膜か形成される
。A silane compound (SiA) is gasified in a vaporizer 2 through an introduction pipe 1, and introduced into a deposition chamber under normal pressure or reduced pressure through a mass flow meter 3. Silane compound (SiA) introduced into the deposition chamber under gas conditions
is subjected to photodecomposition, thermal decomposition, and discharge decomposition by light, heating, glow discharge, etc., and a photoconductive film of ga-8t is formed on a predetermined support 7 made of, for example, an aluminum cylinder.
この例では、感光体ドラム用の光導電膜を形成する例に
限定して説明したが、もちろん本発明はこれによって限
定されるものではなく、他の種々の堆積膜の形成にも適
用されるものである0
本発明の方法に於いて使用されるシラン化合物(SiA
)は、シリコン原子、数が2〜6個に限定されるもの
である良質なa−3t膜を得るには、より好ましくは2
〜5個、最適には2〜4個である。シリコン原子数が7
個以上のものは、その分解が容易で低エネルギー励起に
より所望の堆積膜が得られることが期待されるが予想に
反し光導電膜、半導体膜として品質が劣り、そQ上、膜
の表面上での欠陥及びバルク内での乱れが多く、不均一
な膜となることが判明した。したがってこのような原料
ガスを使用すれば堆積膜の製造のコントロールが困難で
ある。In this example, the explanation has been limited to an example of forming a photoconductive film for a photoreceptor drum, but the present invention is of course not limited to this, and can also be applied to the formation of various other deposited films. 0 The silane compound (SiA
) is more preferably 2 to obtain a high quality a-3t film in which the number of silicon atoms is limited to 2 to 6.
~5 pieces, optimally 2-4 pieces. Number of silicon atoms is 7
However, contrary to expectations, the quality of the photoconductive film and semiconductor film is inferior, and the Q. It was found that there were many defects in the film and disturbances in the bulk, resulting in a non-uniform film. Therefore, if such a raw material gas is used, it is difficult to control the production of the deposited film.
本発明に使用されるシラン化合物(SiA )に含有さ
れる置換置囚においてシラン化合物(SiA)に含有略
れる全置換基(4)の全炭素原子数は1〜11個である
ことが望ましいものである。よシ好ましくは1〜5個で
あり、最適には1〜3個である。全炭素数が12個以上
になると、シラン化合物(siA )をガス化すること
が困難となる。またシラン化合物(SiA )の合成が
困難となる。その他シラン化合物(SfA )の分解効
率が低下するという問題が生じる。使用できる置換置(
4)の例をあけるとs C’Hs−CtHs、CFs、
C迅
= CFHt 、’ −CH2CHt C几、CHtC
HCHs、−CHI CH2−CHt CH,等である
。Desirably, the total number of carbon atoms of all substituents (4) contained in the silane compound (SiA) used in the present invention is 1 to 11. It is. The number is preferably 1 to 5, and most preferably 1 to 3. When the total carbon number is 12 or more, it becomes difficult to gasify the silane compound (siA). Furthermore, it becomes difficult to synthesize a silane compound (SiA). Another problem arises that the decomposition efficiency of the silane compound (SfA) decreases. Available substitutions (
Taking the example of 4), s C'Hs-CtHs, CFs,
C = CFHt,' -CH2CHt C, CHtC
HCHs, -CHI CH2-CHt CH, etc.
シラン化合物(SiA )において、置換基因は、水素
原子よシも結合エネルギーが大きく、クリコン原子が酸
素によって酸化されることを防止し、シラン化合物(S
iA )を酸素に対して安定化している。In the silane compound (SiA), the substituent has a higher bond energy than the hydrogen atom, and prevents the silicon atom from being oxidized by oxygen.
iA) is stabilized against oxygen.
本発明におけるシラン化合物(SiA )において、置
換基(4)以外の置換基として、水素原子又はハロゲン
原子が含有される。ハロゲン原子はフッ素原子[F]、
塩素原子(C4)が好ましいものでおる。The silane compound (SiA 2 ) in the present invention contains a hydrogen atom or a halogen atom as a substituent other than substituent (4). Halogen atoms are fluorine atoms [F],
A chlorine atom (C4) is preferred.
本発明におけるシラン化合物(SiA )において、両
端のシリコン原子の内の少なくとも1個1にはシリコン
との結合の他は、水素原子とI・ロゲy原子の内の少な
くともどちらか一方のみが結合されているため、熱分解
において容易に:Siル、: 5xE(X:、: 5i
Xt (X :〕・ロゲン原子)ラジカルを発生し、良
質なa−8i膜を堆積することができる。熱分解法に適
したシラン化合物(SiA )の例を上げると、
&5iSiHt(CHs) (’ 1 )迅5iSiH
(CL)z (A 2 ))IaSiSi(CHs)s
(’ 、 3 )I(ssisiHzstPL (C
Ha) (s 4 )几5iSiLStH(CHa)z
(轟 5)LSiStHzSi(CHs)s (’
6 )LSiSiH(CL)Si(CL)−(A 7
)HllSiSi(CHs)tsi(CHs)s (A
8 )LSiSiH(CHa)SiL(CH=) (
A 9 )H,5iSiH(CHa)SiH(CI(s
)t (A 10 )Ha S i S I H2S
i迅S iL (CHs ) (ム11 )H3SiS
iHzSiLSi、H(CHs)t (’ 12 )L
SiSiHzSiLSi (CH3)5 (屓13)H
sSiSi(CIL)psi(CHs)zsi(CL)
a (A 14 )などである。In the silane compound (SiA) of the present invention, at least one of the silicon atoms at both ends is bonded to at least one of a hydrogen atom and an I/Rogge atom, in addition to the bond with silicon. Because of this, it is easily thermally decomposed into
Xt (X:].rogen atom) radicals are generated, and a high-quality a-8i film can be deposited. Examples of silane compounds (SiA) suitable for thermal decomposition include &5iSiHt(CHs) ('1)
(CL)z (A 2 ))IaSiSi(CHs)s
(', 3)I(ssisiHzstPL(C
Ha) (s 4 )几5iSiLStH(CHa)z
(Todoroki 5)LSiStHzSi(CHs)s ('
6) LSiSiH(CL)Si(CL)-(A7
) HllSiSi(CHs)tsi(CHs)s (A
8) LSiSiH(CHa)SiL(CH=) (
A9)H,5iSiH(CHa)SiH(CI(s
)t (A 10 )Ha S i S I H2S
iS iL (CHs) (Mu11) H3SiS
iHzSiLSi, H(CHs)t (' 12 )L
SiSiHzSiLSi (CH3)5 (屓13)H
sSiSi(CIL)psi(CHs)zsi(CL)
a (A 14 ), etc.
上記シラン化合物(SiA )は、熱分解法において良
質なa−8t膜を堆積することができる例であるが、グ
ロー放電分解法において、膜内に炭素が含まれてもよい
使用例である電子写真用の材料の原料ガスとして使用す
ることができるものである。The above-mentioned silane compound (SiA) is an example in which a high-quality A-8T film can be deposited in a thermal decomposition method, but in a glow discharge decomposition method, an example in which carbon may be included in the film is used. It can be used as a raw material gas for photographic materials.
以下実施例について説明する。Examples will be described below.
実施例1
第1図に示した装置で、堆積膜形成用の出発物質である
シラン化合物(SiR) (AIから扁14)と、5i
Ha 5izHa (−8iL ’jsを用いパイプ1
を通じて気化装置2で気化し、マスフローメーター3で
流量150secMK調整し、堆積膜形成装置Aに導入
した。内圧0.I Torrにされた原料ガスを所定の
温度に加熱したM製の支持体ドラム7上に流し熱分解に
よりAt製の支持体ドラム7上にa−8iの光導電膜を
形成した。Example 1 Using the apparatus shown in FIG.
Ha 5izHa (Pipe 1 using -8iL 'js
The mixture was vaporized in a vaporizer 2 through a mass flow meter 3, the flow rate was adjusted to 150 secMK, and the mixture was introduced into a deposited film forming apparatus A. Internal pressure 0. The raw material gas, which had been reduced to I Torr, was flowed onto the M support drum 7 heated to a predetermined temperature, and a photoconductive film of A-8I was formed on the At support drum 7 by thermal decomposition.
堆積膜の形成温度、堆積速度、膜の電気的性質および原
料ガスの室温における空気に対する安定度を表1に示す
。Table 1 shows the formation temperature of the deposited film, the deposition rate, the electrical properties of the film, and the stability of the raw material gas against air at room temperature.
実施例2
実施例1と同様な原料を用いて、実施例1と同様な操作
で堆積膜形成装置Aに導入したA、a製の支持体ドラム
を250℃に加熱し、ガス流量を150 secM 、
内圧0.I Torrにし、グロー放電を起こし、a
−8iの堆積膜を作製した。各々の原料ガスに対する堆
積速度の比較と、電気的特性の比較を第2表に示す0Example 2 Using the same raw materials as in Example 1, a support drum made by A, A, which was introduced into the deposited film forming apparatus A in the same manner as in Example 1, was heated to 250°C, and the gas flow rate was set at 150 secM. ,
Internal pressure 0. I Torr, generate a glow discharge, and a
A deposited film of -8i was prepared. Table 2 shows a comparison of deposition rates and electrical characteristics for each source gas.
第1図は、本発明の方法に従って感光ドラムに堆積膜を
製造する装置を模式的に示したものである。
1:原料導入パイプ
2:気化装置
3:マスフローメーター
4:混合ガス導入パイプ
5:加熱用導線及びアース
6:導 線
7:感光体 ドラ ム
8:堆積室排気口
9:堆積室圧力センサーFIG. 1 schematically shows an apparatus for producing a deposited film on a photosensitive drum according to the method of the present invention. 1: Raw material introduction pipe 2: Vaporizer 3: Mass flow meter 4: Mixed gas introduction pipe 5: Heating conductor and ground 6: Conductor 7: Photoreceptor drum 8: Deposition chamber exhaust port 9: Deposition chamber pressure sensor
Claims (1)
、一般式−〇aHbXc (ただし、aは正の整数、b
、cは0または正の整数、b+c=2a+1、Xはハロ
ゲン原子)で表わされる置換基を少なくとも1個有し、
かつ、水素原子と210ゲン原子の少なくともどちらか
一方を含み、かつ、両端のシリコン原子の少なくとも1
個はシリコン原子との結合の他に水素原子とノ・ロゲン
原子の少なくともどちらか一方とのみ結合しているシラ
ン化合物をガス状態で堆積室内に導入し、該ガスに励起
エネルギーを与えて該堆積室内に置かれた支持[、トド
にシリコン原子を含む堆積膜を形成することを特徴とす
る堆積膜の形成法。A silane compound in which two or more silicon atoms are bonded, and has the general formula -〇aHbXc (where a is a positive integer, b
, c is 0 or a positive integer, b + c = 2a + 1, X is a halogen atom),
and contains at least one of a hydrogen atom and a 210-gen atom, and at least one silicon atom at both ends.
In this method, a silane compound that is bonded not only to silicon atoms but also to at least one of hydrogen atoms and nitrogen atoms is introduced into the deposition chamber in a gas state, and excitation energy is given to the gas to deposit the compound. A method for forming a deposited film characterized by forming a deposited film containing silicon atoms on a support placed indoors.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208814A JPS60100676A (en) | 1983-11-07 | 1983-11-07 | Formation of deposited film |
US06/667,816 US4546008A (en) | 1983-11-07 | 1984-11-02 | Method for forming a deposition film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208814A JPS60100676A (en) | 1983-11-07 | 1983-11-07 | Formation of deposited film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60100676A true JPS60100676A (en) | 1985-06-04 |
Family
ID=16562563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58208814A Pending JPS60100676A (en) | 1983-11-07 | 1983-11-07 | Formation of deposited film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60100676A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5374956A (en) * | 1992-05-29 | 1994-12-20 | Eastman Kodak Company | Electronic imaging apparatus with dithered color filter array |
JP2015055614A (en) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | Weather radar system and weather observation method |
-
1983
- 1983-11-07 JP JP58208814A patent/JPS60100676A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5374956A (en) * | 1992-05-29 | 1994-12-20 | Eastman Kodak Company | Electronic imaging apparatus with dithered color filter array |
JP2015055614A (en) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | Weather radar system and weather observation method |
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