JPS5999863A - Color original reading method - Google Patents

Color original reading method

Info

Publication number
JPS5999863A
JPS5999863A JP57209923A JP20992382A JPS5999863A JP S5999863 A JPS5999863 A JP S5999863A JP 57209923 A JP57209923 A JP 57209923A JP 20992382 A JP20992382 A JP 20992382A JP S5999863 A JPS5999863 A JP S5999863A
Authority
JP
Japan
Prior art keywords
color
light
electrode
switch
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57209923A
Other languages
Japanese (ja)
Other versions
JPH0328872B2 (en
Inventor
Hisao Ito
久夫 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP57209923A priority Critical patent/JPS5999863A/en
Publication of JPS5999863A publication Critical patent/JPS5999863A/en
Publication of JPH0328872B2 publication Critical patent/JPH0328872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/46Colour picture communication systems
    • H04N1/48Picture signal generators
    • H04N1/486Picture signal generators with separate detectors, each detector being used for one specific colour component

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)
  • Color Television Image Signal Generators (AREA)
  • Facsimile Scanning Arrangements (AREA)

Abstract

PURPOSE:To simplify the mechanism of a reading section and to read an original with a high sensor density by discriminating an optical signal from a calculated result of a photoelectric converting current obtained by changing a bias voltage applied between both electrodes of a reading element having a multi- layer structure. CONSTITUTION:When a light at each wavelength is irradiated uniformly to a reading element 5 with a switch 6 is opened while no bias voltage is applied thereto, an optical current in response to each wavelength of light is produced by the photoelectric converting operation of the element 5. In this case each switch 8 connected to a lower electrode 2 is closed sequentially, an optical current S1 corresponding to each element 5 is fetched to an arithmetic section 9 and stored in the memory 1. Then, the switch 6 is closed, a prescribed bias voltage is applied between a transparent electrode 4 and the lower electrode 2 for irradiating light, each switch 8 is closed sequentially at the same time to fetch a photo current S2 produced on the electrode 2 to the arithmetic section 9. The color of the irradiated light is discriminated by applying a prescribed calculation to the currents S1, S2 and obtaining a value determined definitely at each wavelength.

Description

【発明の詳細な説明】 本発明はカラー原稿の色rf#像度を向上させるための
カラー原稿読取方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a color document reading method for improving the color RF# image quality of a color document.

従来のカラーファクシミリ等におけるカラー原烏読取装
置には赤、緑、青のダイクロイックミラーからなる三色
分解フィルタが用いられていた。。
A three-color separation filter consisting of red, green, and blue dichroic mirrors has been used in a conventional color facsimile reading device. .

そして照明用光源によるカラー原稿からの反射うCをこ
の赤、緑、宵のダイクロイックミラーからなる3色分解
光学系を介して3色に分解した後光電変換を行い、その
電気信号から光14号の色を#11別しカラー原ft1
の読み取りを行っていた。このように従来のカラー原稿
読取装置においては、3色分角゛C用フィルタを用いる
ためそのための処理回路等も必要となり、読取部の機構
、回路1′1り成が複雑になるという不都合があった。
Then, the C reflected from the color document by the illumination light source is separated into three colors through this three-color separation optical system consisting of red, green, and evening dichroic mirrors, and then photoelectrically converted, and the electrical signal is converted into optical signal 14. Color #11 and color original ft1
was being read. In this way, in the conventional color document reading device, since a filter for three color separation angles C is used, a processing circuit for this purpose is also required, which has the disadvantage that the structure of the reading section and the configuration of the circuit 1'1 become complicated. there were.

またダイクロイックミラーのフィルタ特性によって分解
波長領域が制限され十分々解像結果を得ることができな
いといつ問題もあった。
Furthermore, the filter characteristics of the dichroic mirror limit the wavelength range to be resolved, and there has always been a problem in that it is not possible to obtain a sufficiently resolved result.

本発明はかかる実状に鑑みてなされたものであり装置と
して3色分解用フィルタが不要であり単純機構かつ広い
波長領域の光の効率よい解像結果が得られるカラー原稿
読取方法を提供することをその目的とする。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a color document reading method that does not require a three-color separation filter as a device, has a simple mechanism, and can obtain efficient resolution results for light in a wide wavelength range. That purpose.

本発明においては上記観点から近年、ファクシミリ等の
原稿読取部の小型化を計るために開発の進X7でいる長
尺薄膜読取素子の流用に着目したものである。この読取
素子は絶縁性基板上に所定形状でパターンニングされた
複数の下部電極に光導電体を着膜し、更にその上に透明
電極を着膜した多層構造の光電変換素子でおる。かかる
読取素子は原稿幅と同程度の大きさで構成できファクシ
ミリ等の原稿読取部の小型化に寄与できるのみならず、
0゜] ITI sec以下の光応答特性、200’O
以上の耐熱性等種々の利点を有している。
In view of the above, the present invention focuses on the use of a long thin film reading element, which has been developed in recent years in order to miniaturize document reading sections of facsimile machines and the like. This reading element is a photoelectric conversion element with a multilayer structure in which a photoconductor is deposited on a plurality of lower electrodes patterned in a predetermined shape on an insulating substrate, and a transparent electrode is further deposited on top of the photoconductor. Such a reading element can be configured to have a size comparable to the width of the document, and not only can it contribute to miniaturization of the document reading section of a facsimile machine, etc.
0°] Photoresponse characteristics below ITI sec, 200'O
It has various advantages such as the above heat resistance.

ところでこのような多層構造の読取素子に同一の光を照
射するとき下部電極と透明電極間に任意の異なる値のバ
イアス電圧を加えると、照射によって得られる光電変換
電流は、その加えられるバイアス電圧によって変化する
という性質を有している。そこで本発明においては上述
した多層構造のRI9Z素子に同一の光を照射するとき
に該読取素子の両電極間に値の異なる任意のバ・fアス
電用を加え、各々のバイアス電圧に応じた光電変換電流
をそれぞれ求め所定の演算を施すことによって各照射光
の色に対して一意的に定まる演算値から照射された光の
色を判別するようにしている。
By the way, when applying the same light to a reading element with such a multilayer structure, if a bias voltage of an arbitrarily different value is applied between the lower electrode and the transparent electrode, the photoelectric conversion current obtained by the irradiation will depend on the applied bias voltage. It has the property of changing. Therefore, in the present invention, when the same light is irradiated to the multilayered RI9Z element described above, arbitrary bias voltages having different values are added between the two electrodes of the reading element, and the voltage is adjusted according to each bias voltage. By calculating each photoelectric conversion current and performing a predetermined calculation, the color of the irradiated light is determined from the calculated value that is uniquely determined for each color of irradiated light.

以下本発明の一実施例を添+j図面にもとづき詳細に説
明する。第1因は本発明に係るカラー原稍耽取素子の構
造を示す平面図であり絶縁性基板l上にくし形にパター
ンニングされた複数の下部電極2に光導電体3を着膜し
更にその上に透明型(へ4を着膜して構成されている。
An embodiment of the present invention will be described in detail below based on the attached drawings. The first factor is a plan view showing the structure of the color original absorption element according to the present invention. It is constructed by depositing a transparent mold (4) on top of it.

第2図はこの読取素子5のA−A線断面図を示したもの
である。以下、この読取素子5の製造方法を実際の製造
行程に即して詳述する。本発明では?3縁性基板1にガ
ラス、下部電極2にCr、光導電体3に非晶質水素化シ
リコン、透明電極4に酸化インジウム錫なそれぞれ用い
ている。まず電子ビーム蒸着法によシガ2ス基板上にO
r(クロム)を約3(100A’の厚さに着膜する。続
いてフォトソリグラフィー法によpこの着膜したCrを
複数のくし形状にパターンニングし、下部電極2を形成
させる。次にグロー放電法により非晶質シリコンを約1
μmの厚さに着膜し、光導電体2を形成させる。
FIG. 2 shows a cross-sectional view of this reading element 5 taken along line A--A. Hereinafter, the method for manufacturing the reading element 5 will be described in detail in accordance with the actual manufacturing process. In the present invention? Glass is used for the three-edge substrate 1, Cr is used for the lower electrode 2, amorphous hydrogenated silicon is used for the photoconductor 3, and indium tin oxide is used for the transparent electrode 4. First, by electron beam evaporation method, O
A film of r (chromium) is deposited to a thickness of about 3 (100 A'). Next, the deposited Cr film is patterned into a plurality of comb shapes by photolithography to form the lower electrode 2.Next Approximately 1% of amorphous silicon is
A film is deposited to a thickness of μm to form a photoconductor 2.

この時使用するガスは100%SiH4であり、ガス流
量20〜508 ccM 、圧力0.2〜U−5Tor
r、 RFパワー20〜50 W、基板温度200〜3
00°C1着膜時間30分〜1時間を作成条件とする。
The gas used at this time is 100% SiH4, the gas flow rate is 20 to 508 ccM, and the pressure is 0.2 to U-5 Tor.
r, RF power 20-50 W, substrate temperature 200-3
The preparation conditions were 00°C1 film deposition time of 30 minutes to 1 hour.

更にDCスパッタ法によりこの非晶質シリコン上に酸化
インジウム錫を約1500 p、0着膜し、透明電極4
を形成させる。この際にはターゲットとして酸化インジ
ウム錫(90mo/?%I n 20 g + 10m
 o l$ S no 2 )を用いるが、全ガス(A
r+02)圧1〜5 X 10−”Torr、酸素分圧
]−〜2 Xl0−’Torr%D cハr7−150
〜200Wを作成条件とする。このような作成方法°作
成売件により製造された読取素子5は第2図に示すよう
に透明電極4である酸化インジウム錫と光導電体3であ
る非晶質シリコン間でn−n型のへテロ接合を形成する
ため光を照射することにより所定の光起電力を生ずるい
わゆる光電変換機能を有している。この読取素子5の下
部電!21j:複数のパターンに分割されているが、こ
の各々のパターン電極によってカラー原梧からの反射光
を画素毎に光電変換できる。
Furthermore, a film of about 1500 p, 0 indium tin oxide was deposited on this amorphous silicon by DC sputtering, and a transparent electrode 4
to form. In this case, indium tin oxide (90mo/?%I n 20 g + 10m
o l$S no 2), but the total gas (A
r+02) Pressure 1~5 X 10-'Torr, oxygen partial pressure]-~2
The production condition is ~200W. As shown in FIG. 2, the reading element 5 manufactured by such a manufacturing method and the manufacturing process has an n-n type structure between indium tin oxide, which is the transparent electrode 4, and amorphous silicon, which is the photoconductor 3. It has a so-called photoelectric conversion function that generates a predetermined photovoltaic force by irradiating light to form a heterojunction. The lower part of this reading element 5! 21j: Divided into a plurality of patterns, each pattern electrode allows photoelectric conversion of the reflected light from the color rays for each pixel.

第3図はこの読取素子5を用いて構成したカラー原稿読
取装置の概略構成ブロック囚を示したものである。透ツ
]電極4とアース間にはスイッ−f6を介して例えげ−
5■のバイアス電源7が接続される。また下部電極2は
それぞれの下部電極2に対応して設けられた複数のスイ
ッチ8を介して、信号演算部9に接続される3、今スイ
ッチ6を開成しバイアス電圧を印加しない状態で読取素
子5に各波長毎の光を一様に照射する。、−flうする
とこの読取素子5の光電変換作用により該各々の光の波
長に応じた光電流が生じる。この時各々の下部電極2に
接続されたそれぞれのスイッチ8を1航次閉成し、各々
の読取素子に対応する光電流slを濱針部9に取りこみ
図示しないメモリ顛1時記憶し”〔お〜く。この結果得
られる各波長のつv、に対する両電極間ノンバイアス時
の光電流S1は第5図(a)に示す分光特性を示す。こ
の時の分光特性のピークは波長60(lnm伺近に位置
している。次にスイノヂ6f:閉成し透明電極4、下部
電極2間に一5Vのバイアス電)Eを加え上、述したと
同様の光の照射を行う。この時、同時に各スイノヂ8を
順次閉成することにより各々の下部電極2に生じたつい
■j、流S2を済p一部9に取り込む。この両正極間−
5Vハ・イアス時に得られる各波長の光に対する光電流
S2は第5図(b)に示す分光特性を示す。
FIG. 3 shows a schematic block diagram of a color document reading device constructed using this reading element 5. As shown in FIG. For example, a switch is connected between electrode 4 and ground via switch f6.
A bias power supply 7 (5) is connected. The lower electrode 2 is connected to a signal calculation unit 9 via a plurality of switches 8 provided corresponding to the respective lower electrodes 2. The read element 3 is connected to a signal calculation unit 9 by opening the switch 6 and applying no bias voltage. 5 is uniformly irradiated with light of each wavelength. , -fl, the photoelectric conversion action of the reading element 5 generates a photocurrent corresponding to the wavelength of each light. At this time, each switch 8 connected to each lower electrode 2 is closed for the first time, and the photocurrent sl corresponding to each reading element is taken into the base needle part 9 and stored in a memory (not shown). The photocurrent S1 obtained as a result of the non-bias between both electrodes for each wavelength V shows the spectral characteristics shown in FIG. 5(a).The peak of the spectral characteristics at this time is at wavelength 60 Next, Suinoji 6F: Close the transparent electrode 4 and the lower electrode 2. A bias voltage of 15V (E) is applied between them, and the same light as described above is irradiated.At this time, At the same time, by sequentially closing each switch 8, the flow S2 generated at each lower electrode 2 is taken into the finished part 9. Between these two positive electrodes -
The photocurrent S2 for light of each wavelength obtained at 5V high/earth shows the spectral characteristics shown in FIG. 5(b).

この時分光l[¥性のピークはfiJQnrn付近に移
動していることがわかる。このことから、−L述(〜た
方法により得た光電変換電流S1とS2に所定の演算を
施せば各波長毎に一意的に定まる値を求められることが
わかる。本発明でtま上記演算に割り算を適用(7てい
る。そこでこの両正極間ノンバイアス時に得られる光電
流81と−5vバイアス時に得られる光電流S、からそ
の比S、、、/S2を予め求め”〔おく。第6図は照明
用光?7;−としてタングステンランプを用いたときの
上記St/82%性を示すものである。上述した演算部
9岐両電極間を−5Vバイアス時の光電jiEszを得
r後、該S2と先に求めて記憶(〜ておいたSlから所
定の演算によりS + / S 2を算出し、出カイ場
FTout iタニttj力する、この演算部9の出力
と予め求めておいたS、/S。
At this time, it can be seen that the peak of the spectral l[\ property has moved to the vicinity of fiJQnrn. From this, it can be seen that if a predetermined calculation is performed on the photoelectric conversion currents S1 and S2 obtained by the method described in -L (~), a value that is uniquely determined for each wavelength can be obtained. Then, from the photocurrent 81 obtained when there is no bias between both positive electrodes and the photocurrent S obtained when -5V bias is applied, the ratio S, , /S2 is determined in advance. Figure 6 shows the above St/82% property when a tungsten lamp is used as the illumination light.The photoelectric power jiEsz when biasing -5V between the two electrodes of the above-mentioned arithmetic section 9 is obtained. After that, calculate S + / S 2 by a predetermined calculation from S2 and the previously calculated S1, and input the output field FTout. Oita S, /S.

を比較することにより照射された九の波長を求めること
ができこれによって政党の急14]別すなわちへIc取
りを行う。上述した例では実験的に各波長の光を読取部
:f5に一梯に照射した場合で説明したが、実際(?ニ
ファクシミリ等に実装された場合はこの照射光(τを元
汀用ラングによるカラー原稿からの反射几である。
By comparing the 9 wavelengths of the irradiated light, the wavelength of the irradiated light can be obtained, and from this, the Ic of the political party can be determined. In the above example, we have explained the case where light of each wavelength is irradiated on the reading section f5 in one step, but in reality (? This is a reflection from a color original.

従って読取素子5には前記カラー原稿の画素に応じたそ
れぞれの光が照射され、各下部電極2から得られる光i
lI流Sl、82および演算部9から得られるS (/
S 2は電極毎に異なった値が得られる。また本発明で
は下部電極、透明電極間のバイアス電圧をQVと一5N
とし得られる光電fis。
Therefore, the reading element 5 is irradiated with light corresponding to each pixel of the color original, and the light i obtained from each lower electrode 2 is
S (/
Different values of S2 can be obtained for each electrode. In addition, in the present invention, the bias voltage between the lower electrode and the transparent electrode is set to QV and -5N.
The photoelectric fis obtained as

とS2に対してはその比Sx/Stを求める演算を施l
〜だ例について述べたが、各周波数毎に一意的に定まる
値を求めることができれば、上述した以外のバイアス値
あるいは演算を用いてもよいことtま勿論である。
and S2, perform the calculation to obtain the ratio Sx/St.
Although the examples have been described, it goes without saying that bias values or calculations other than those described above may be used as long as a value that is uniquely determined for each frequency can be obtained.

以−に説明したように本発明のカラー原稿読取方法によ
れば多層構造を有する読取素子の両電極間に加えるバイ
アス電圧を変えることによっC得られる光電変換電流S
I+S2の所定の演算結果から光信号を判別するように
したためカラーフィルタが不要であり読取部の機構が申
t’ll化されるとともに1つのビy)で広い波長領域
の七ンヤ密度の高いカラー原稿の読取りが可能になると
いう優れた効果を奏する。
As explained above, according to the color original reading method of the present invention, the photoelectric conversion current S obtained by changing the bias voltage applied between both electrodes of the reading element having a multilayer structure is
Since the optical signal is determined from the predetermined calculation result of I+S2, there is no need for a color filter, and the mechanism of the reading section can be simplified. This has the excellent effect of making it possible to read the original.

以上の実施例でしょ光導電体層として、単層の水素化非
晶T1シリコンを用いたが他に、ブe4電体層を多層v
f造にした金属電極/n型−1型−p型a−8i目I/
透明正極、及び逆構造の金属゛電杓/p型−1型−n型
3−8i:H/透明電極構造のセンサに於いても同様の
結果が得られる。
In the above example, a single layer of hydrogenated amorphous T1 silicon was used as the photoconductor layer, but in addition, a multilayer V4 conductor layer was used.
Metal electrode with f structure/n type-1 type-p type a-8i type I/
Similar results can be obtained in a sensor with a transparent positive electrode and a reverse metal electrode/p-type-1-n-type 3-8i:H/transparent electrode structure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は本発明にかがン)カラーに1.稍読取
素イを示す概略t1り成因であり、第1図は正面図、第
2図は第1図に示した正面図の八−A斤引jH1i面図
である。第3図は本発明の一実施件1を示すカラー原D
i 1Ffe取装置の概略回路図、第4 [::1(a
) 、 (b++、+、不九四の実施により得られる各
波長の9v−に対Jるl′1′、1(i。 流の値を示すグラフであり第4図(a)+1.ノンバイ
ノ゛ス時、第4図(b)ij−5Vバイアス時衛示して
いる。 第5[図は本発明の読取素子により得られるタングステ
ンランプを照明用光汀としたときのS l/ S 2特
性を示ずグラフである。 1  絶htt+ノー、板、2−下部電極、3 ブ〔,
4Ij体、4  i委トカ1祝(ス、 5− カシー原
私読Jlυネ了−26、8・スイッチ、7・・バイアス
ili、 IN、9・・・イ1j−号濱j’? R(’
第”図  7,4互 第2図 第3図 0IJt 第4図 叫 1−−1 、−−J−−−−ニー □ 0  500     600     700  (
nm)邊  )モ 第5図 500        600        700
  (nm)彼 k−
1 and 2 are based on the present invention) Color 1. FIG. 1 is a front view, and FIG. 2 is an 8-A horizontal view of the front view shown in FIG. 1. FIG. 3 is a color original D showing one embodiment 1 of the present invention.
i Schematic circuit diagram of 1Ffe extraction device, No. 4 [::1(a
), (b++, +, is a graph showing the value of J'1', 1(i. Fig. 4(b) shows the S l/S 2 characteristics when the tungsten lamp obtained by the reading element of the present invention is used as the illumination light source. It is a graph without showing. 1 Absolute htt + no, plate, 2 - lower electrode, 3 b [,
4Ij body, 4 i committee toka 1 congratulations (su, 5- Kashihara private reading Jlυne completed-26, 8 switch, 7...bias ili, IN, 9...I1j-issue Hamaj'? R( '
Figure 7 and 4 Alternate Figure 2 Figure 3 0IJt Figure 4 Shout 1--1 , --J----Knee□ 0 500 600 700 (
nm) side )mo Fig. 5 500 600 700
(nm) he k-

Claims (4)

【特許請求の範囲】[Claims] (1)光ff1.変換素子に同一の光を照射するととも
に値の異なる任意のバイアス電圧加えることによって前
記光電変換素子から得られる前記各々のバイアス電圧に
応じた少なくとも2つの光電変換電流を演算しその@算
結果から照射されたブ(−の色を判別することを特徴と
するカラー月1稿読取方法。
(1) Light ff1. By irradiating the conversion element with the same light and applying arbitrary bias voltages with different values, at least two photoelectric conversion currents corresponding to the respective bias voltages obtained from the photoelectric conversion element are calculated, and irradiation is performed from the @ calculation result. A color monthly draft reading method characterized by determining the color of a negative sign (-).
(2)  前記光電変換素子は絶縁性基板上に金石電極
、その上に光導電体さらにその上に透明型棒をそれぞれ
7目qした構造であることを特徴とする特許請求の範囲
第(1)項記載のカラー原稿読取方法。
(2) The photoelectric conversion element has a structure in which a goldstone electrode is placed on an insulating substrate, a photoconductor is placed on top of the goldstone electrode, and transparent rods are placed on top of the photoconductor, and transparent rods are placed on top of the goldstone electrode. ) Color document reading method described in section.
(3)前記演算は四則演算のうちいずれかであることを
特徴とする特許請求の範囲第(1)項記載のカラー原稿
読取方法。
(3) The color original reading method according to claim (1), wherein the calculation is one of four arithmetic calculations.
(4)前記演算結果は各党の色に対し〔一意的に定まる
値であることを特徴とする特許請求の範囲第(1)項記
載のカラー原稿読取方法。
(4) The color document reading method according to claim (1), wherein the calculation result is a value that is uniquely determined for each color.
JP57209923A 1982-11-29 1982-11-29 Color original reading method Granted JPS5999863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57209923A JPS5999863A (en) 1982-11-29 1982-11-29 Color original reading method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57209923A JPS5999863A (en) 1982-11-29 1982-11-29 Color original reading method

Publications (2)

Publication Number Publication Date
JPS5999863A true JPS5999863A (en) 1984-06-08
JPH0328872B2 JPH0328872B2 (en) 1991-04-22

Family

ID=16580900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57209923A Granted JPS5999863A (en) 1982-11-29 1982-11-29 Color original reading method

Country Status (1)

Country Link
JP (1) JPS5999863A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187959U (en) * 1984-05-23 1985-12-12 株式会社山武 External storage device control device
JPS6258119A (en) * 1985-09-06 1987-03-13 Minolta Camera Co Ltd Color sensor
US4804833A (en) * 1985-09-06 1989-02-14 Minolta Camera Kabushiki Kaisha Color sensing method and device therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546628A (en) * 1978-09-28 1980-04-01 Fujitsu Ltd Timing phase synchronization system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546628A (en) * 1978-09-28 1980-04-01 Fujitsu Ltd Timing phase synchronization system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187959U (en) * 1984-05-23 1985-12-12 株式会社山武 External storage device control device
JPS6258119A (en) * 1985-09-06 1987-03-13 Minolta Camera Co Ltd Color sensor
US4804833A (en) * 1985-09-06 1989-02-14 Minolta Camera Kabushiki Kaisha Color sensing method and device therefor

Also Published As

Publication number Publication date
JPH0328872B2 (en) 1991-04-22

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