JPS59977A - Bidirectional wavelength conversion element - Google Patents
Bidirectional wavelength conversion elementInfo
- Publication number
- JPS59977A JPS59977A JP57109549A JP10954982A JPS59977A JP S59977 A JPS59977 A JP S59977A JP 57109549 A JP57109549 A JP 57109549A JP 10954982 A JP10954982 A JP 10954982A JP S59977 A JPS59977 A JP S59977A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wavelength conversion
- conversion element
- type
- bidirectional wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 22
- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract 4
- 230000007704 transition Effects 0.000 claims description 4
- 235000006679 Mentha X verticillata Nutrition 0.000 claims 1
- 235000002899 Mentha suaveolens Nutrition 0.000 claims 1
- 235000001636 Mentha x rotundifolia Nutrition 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000001052 transient effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/02—Frequency-changing of light, e.g. by quantum counters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は双方向に波長を変換できるモノリシック双方向
波長変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a monolithic bidirectional wavelength conversion element capable of bidirectional wavelength conversion.
第１図は従来の波長変換器を示す図である。FIG. 1 is a diagram showing a conventional wavelength converter.
従来は１例えばＩず波長λ、の入射光をその入射波長λ
、に合りたバンドギャップを有する光検出器で受光し電
気信号に変換し、この電気信号を変換器により電流信号
に変換し、この電流信号によって発光波長λ、に合った
バンドギヤリプを有する発光素子を発光させて波長會λ
。Conventionally, for example, the incident light of wavelength λ is
A photodetector with a bandgap matching the wavelength λ receives the light and converts it into an electrical signal, a converter converts the electrical signal into a current signal, and the current signal generates a light-emitting element with a bandgap matching the emission wavelength λ. to emit light and the wavelength λ
.
からλ、に変換していた。このため、従来の波長変換器
はそのま＼では双方向には波長を変換できずまたその発
光効率も悪いという欠へがあつたＯ
本発明の目的は、２つの異なった波長間で双方向に効率
よく波長を変換することが可能なキノリシック双方向波
長変換素子を提供することである。was converted from λ to λ. For this reason, conventional wavelength converters cannot convert wavelengths in both directions as they are, and their luminous efficiency is also poor. An object of the present invention is to provide a quinolithic bidirectional wavelength conversion element capable of efficiently converting wavelengths.
以下に図面を参照して本発明について詳細に説明する。The present invention will be described in detail below with reference to the drawings.
＠２図は本発明のモノリシック双方向波長変換素子の実
施例を示す図である。■２図（ａ）は本発明の双方向波
長変換素子の構造を示す図である。Ｇａ１−ｘｋｌｘＡ
ｓ系の直接遷移型の半導体により構成されているｎ ｐ
−Ｇａ １−ｘ７ｆｆｌｘＡｓ層１゜ｎ−Ｇａ１−ｙＡ
／ｙＡｓ層２及びｐ −Ｇａ １− ｚＡｌ？ ｚＡｓ
［５によりｐ’ｎ ｐ トランジスタ構造を構成し。@2 Figure is a diagram showing an embodiment of the monolithic bidirectional wavelength conversion element of the present invention. (2) FIG. 2(a) is a diagram showing the structure of the bidirectional wavelength conversion element of the present invention. Ga1-xklxA
np composed of s-based direct transition type semiconductors
-Ga 1-x7fflxAs layer 1゜n-Ga1-yA
/yAs layer 2 and p-Ga1-zAl? zAs
[5 constitutes a p'n p transistor structure.
電極４−５間に外部バイアス電圧Ｖを１−１−２間が逆
バイアスに＃２−６間が順バイアスになるように印加・
する。Apply an external bias voltage V between electrodes 4 and 5 so that between electrodes 1 and 1 and 2 becomes a reverse bias and between #2 and 6 becomes a forward bias.
do.
第２図（ｂ）は本発明のモノリシック双方向波長変換素
子のバンド構造を示す図である。波長λ１の入射光はバ
ンドギャップＥ ｇｌ（＝ 乎［ｅ Ｖｌ）（但し、λ
、の単位はμｍ）のｐ−ＧａｌｘＭｘＡｓ１−１に入射
し光電子を宅生させる。発生した電子はＰ −Ｇ’ １
−ｘＡｊ？ｘＡｓ層１とｎ−Ｇａ １−ｙＭｙＡｓｌ−
２との間に印加された逆バイアス電界によりｎ −Ｇ’
１−３’ＡｊｆｙＡａ ｔｉ２に流れ込む。電荷中性
条件よりｎ−Ｇａ １−ｙＡｌｙＡｓ層２の正孔濃度が
電子濃度に等しくなるよう正孔注入が必要となりｎ−Ｇ
ａ１−ｙＡＡ！ｙＡｓ 層２とｐ −Ｇｏ １− ｚ
ＭｚＡｓｌ−６との間は順バイアス状態になる。そのた
め。FIG. 2(b) is a diagram showing the band structure of the monolithic bidirectional wavelength conversion element of the present invention. The incident light of wavelength λ1 has a bandgap E gl (=乎[e Vl) (However, λ
, whose unit is μm), enters p-GalxMxAs1-1 and generates photoelectrons. The generated electron is P −G' 1
-xAj? xAs layer 1 and n-Ga 1-yMyAsl-
2 due to the reverse bias electric field applied between n - G'
Flows into 1-3'AjfyAa ti2. Due to the charge neutrality condition, hole injection is required so that the hole concentration in the n-Ga 1-yAlyAs layer 2 is equal to the electron concentration, so the n-G
a1-yAA! yAs layer 2 and p-Go1-z
A forward bias state is established between MzAsl-6 and MzAsl-6. Therefore.
ｎ−Ｇａ １−ｙＡｊ？ｙＡａ層２に流れ込ンタ電子Ｕ
ｐ −Ｇａ １− ｚＡｌｚＡｓ層３に注入され、この
領域で電光再結合する。この場合にｐ−ＧＩ２１− ｚ
Ａ７ｚＡｓＩＩ＃３として所望の発光波長λ２ に対応
する１、２４
バンドギーｙツブＥｇｓ （＝ −１Ｃｅ Ｖ 〕）
（但し。n-Ga 1-yAj? The electrons U flowing into the yAa layer 2
It is implanted into the p-Ga 1-zAlzAs layer 3 and undergoes electrophotonic recombination in this region. In this case p-GI21-z
A7zAsII#3 corresponds to the desired emission wavelength λ2, 1, 24 bands Egs (= -1Ce V ])
(however.
λ２の単位はμｍ）になるような組成を選べば波長λ２
の光が得られる。μ上の過程により波長λ１ の入射光
は波長λ、の光に変函される。If you choose a composition such that the unit of λ2 is μm), the wavelength λ2
of light can be obtained. By the process on μ, the incident light of wavelength λ1 is transformed into light of wavelength λ.
＠２図において外部バイアス電圧Ｖを図示とは逆方向に
印加し、 ｐ −Ｇａ １−ｚＡｌｚＡｓ Ｉ脅６の
側から波長λ２ の光を入射すれば前述の説明と全く同
様にｐ−Ｇａ１−ｘＡｆｆｌｘＡｓ Ｉ！ｉｆ １の側
から波長λ、の光が得られる。即ち、波長λ２ から波
長λ、への変換もできこれによって双方向波長変換が可
能となる。@2 In Figure 2, if the external bias voltage V is applied in the opposite direction to that shown in the figure, and light of wavelength λ2 is incident from the side of p -Ga 1-zAlzAs 6, p-Ga 1-xAfflxAs is obtained in exactly the same way as described above. I! Light of wavelength λ is obtained from the if 1 side. That is, the wavelength λ2 can also be converted to the wavelength λ, thereby making bidirectional wavelength conversion possible.
ｎ −Ｇａ １−ｙＡ７ｙＡｓ層２への正札ノ注入効率
を少なくし発光層への電子の注入効率を増加させる必要
があるため・ｎ−Ｇ１１１−）’ＭｙＡｓｌ（ｉ２のバ
ンドギャップＥｇ２はバンドギャップＥｇｔ 。n-Ga1-yA7yAs it is necessary to reduce the efficiency of injection into the As layer 2 and increase the efficiency of injection of electrons into the light-emitting layer. .
Ｅｇａよりも大きくした方がよく、その大きさはＥｇｔ
、Ｅｇｓの大をい方のバンドギャップより５ＵｍｅＶ
以上大きければよい。It is better to make it larger than Ega, and its size is Egt.
, 5 UmeV from the larger bandgap of Egs.
It should be larger than that.
耶６図は本元明のモノリシック双方向波長変換素子の別
の実施例を示す図である。第５図（ａ）は波長変換の際
に変換効率をより向上させる双方向波長変換素子の構造
を示し、第６図（ｂ）はそのバンド構造を示す。この構
造の特徴は変換効率を悪くする主原因である表面再結合
過程をなくした薇にある。即ち、ｐ−Ｇａ１−ｘＡｆｆ
ｌｘＡｓ 層１の外側にこれよりバンドギヤリプの大き
いＰ −（ｙ ａ’ −ｐ ＭＰ Ａ ｓ ｍ ５１（
Ｅ ｇｌ３ ＞ Ｅｇ ＋ ） ｋ形成し、同様に１）
−Ｇａ１−ｚＭｚＡｓ Ｉ＠６の外側にこれよりバンド
ギャップの大きいＰ−Ｇａ １−ｑＡ／ｑＡｓ層３２
（Ｅｇｇ□＞Ｅｇａ）を形成することにより表面へのキ
ャリアの拡散を防止している。FIG. 6 is a diagram showing another embodiment of Akira Hongen's monolithic bidirectional wavelength conversion element. FIG. 5(a) shows the structure of a bidirectional wavelength conversion element that further improves conversion efficiency during wavelength conversion, and FIG. 6(b) shows its band structure. The feature of this structure is that it eliminates the surface recombination process, which is the main cause of poor conversion efficiency. That is, p-Ga1-xAff
lxAs Outside of layer 1, there is a band gear lip larger than this P - (ya' -p MP A s m 51 (
E gl3 > Eg + ) k is formed, and similarly 1)
-Ga1-zMzAs I@6 has a P-Ga 1-qA/qAs layer 32 with a larger band gap outside of I@6.
By forming (Egg□>Ega), diffusion of carriers to the surface is prevented.
μ上述べた構造においてｐ型ｔ−ｎ型に反転しｎ型をｐ
型に反転した場合も全く同様に波長変換が可能である。μIn the structure described above, the p-type is inverted to the t-n type, and the n-type is inverted to the p-type.
Wavelength conversion is possible in exactly the same way when the structure is inverted.
Ｇｏ １−ｘＡＡｉｘＡｓ系を列にとり説明したが、Ｉ
ｎ１−ｘＧａｘＡｓｌ−ｙＰｙ系。Go 1-xAAixAs series was explained as a sequence, but I
n1-xGaxAsl-yPy system.
Ｉｎ １７ｘＧａｘＳｂ １−、’ＪＰ’ｉ系、Ｇａ、
ｉ−ｘＭｘＡｓ１−ｙＳｂｙ 系−Ｉｎ１−ｘＧａ、
ｘＡｓｌ−ｙｓｂｙ系等に適用できることは容易にわか
る。In 17xGaxSb 1-, 'JP'i series, Ga,
i-xMxAs1-ySby system-In1-xGa,
It is easy to see that it can be applied to xAsl-ysby systems and the like.
＠１図は従来の波長変換器を示す図、傭２図は本発明の
モノリシック双方向波長変換素子の実施例を示す図、第
３図は本発明のモノリシック双方向波長変換素子の別の
実施列を示す図である。
１：ｐ（又はｎ ） −Ｇａ １−ｘＡＪｌｘＡｓ層（
バンドギャップＥｇ＋ ）
２：ｎ（又はｐ ）−Ｇａ１−ｙＭｙＡｓ層（バンドギ
ャップＥｌｈ 、Ｅｇｇ＞Ｅｇｔ ）５ ： ｐ（５［
ｎ ）−’Ｇａ １−ｚ７ｖ！ｚＡｓｌｉ（バンドギャ
ップ）５ｇｓ 、Ｅｇｓ ＜Ｅｇ２）４．５：電極
３ １ ：Ｐ（１まＮ ）−Ｇａ １−ｐＭｐＡＳ
ｌ−（バンドギャップＥｇ３＋ 、Ｅｇ３＋＞Ｅｇ＋
）’３２：Ｐ（又はＮ）−Ｇａ１−ｑＭｑＡｓ １ｍ
（バンドギャップＥｇ３２１痩。□＞Ｅｇｓ ）特許出
願人住友電気工業株式会社
１）Ｚる）
無１図
本２ 図
（（２）
＜ｂ）Figure 1 shows a conventional wavelength converter, Figure 2 shows an embodiment of the monolithic bidirectional wavelength conversion element of the present invention, and Figure 3 shows another implementation of the monolithic bidirectional wavelength conversion element of the invention. It is a diagram showing columns. 1:p(or n)-Ga1-xAJlxAs layer (
Bandgap Eg+ ) 2:n (or p)-Ga1-yMyAs layer (bandgap Elh, Egg>Egt) 5: p(5[
n)-'Ga1-z7v! zAsli (bandgap) 5gs, Egs <Eg2) 4.5: Electrode 3 1 : P (1 N)-Ga 1-pMpAS
l-(band gap Eg3+, Eg3+>Eg+
)'32:P (or N)-Ga1-qMqAs 1m
(Band gap Eg321 slimming. □>Egs) Patent applicant Sumitomo Electric Industries, Ltd. 1) Zru) No 1 Figure Book 2 Figure ((2) <b)
Claims (1)
ｐｎ）型トランジスタ構造から成ることを特徴とする双
方向波長変換素子。 ＋２） ｉｌｌにおいて６両側のｐ（又はｎ）型半導
体がそれぞれ異なるバンドギャップを・目し・中央のｎ
（又はｐ）型半導体が前記両側の半導体のバンドギャッ
プよりも大きいバンドギヤリプを有するヘテロ構造から
成ることを特徴とする双方向波長変換素子。 （３）（Ｉにおいて、更に、前記両側のｐ（又はｎ）型
半導体の外側にこれらの・ミントギャップよりも大きい
バンドギャップを有する直接遷移型又は間接遷移型のＰ
（又はＮ）型半導体を有するＰｐｎｐＰ（又はＮｎｐｎ
Ｎ）構造から成ることを特徴とする双方向波長変換素子
。 （４） （１１において、前記半導体材料がＧａ１−
ｘＡＡ！ｘＡｓ’ｉ−Ｉｎ１−ｘＧａｘＡｓｌ−ｙＰｙ
系・Ｉ ｎ １−ｘ（ｙ＋ ｘｓｂ １−ｙｐｙ系−”
Ｇａ１−ｘＭ’ｘＡｓ１−ｙＳｂｙ 系及びＩ ｎ
１−ｘＧａ ｘＡｓ １−ＹＳｂｙ系の各半導体材料か
ら成ることを特徴とする双方向波長変換素子。[Claims] (1) PNP (also 1JN) using direct transition type semiconductor material
A bidirectional wavelength conversion element comprising a pn) type transistor structure. +2) In ill, the p (or n) type semiconductors on both sides have different band gaps.
A bidirectional wavelength conversion element, characterized in that the (or p) type semiconductor is comprised of a heterostructure having a band gap larger than the band gap of the semiconductors on both sides. (3) (In I, furthermore, a direct transition type or indirect transition type P having a band gap larger than these Mint gaps on the outside of the p (or n) type semiconductor on both sides of the
PpnpP (or Nnpn) having (or N) type semiconductor
N) A bidirectional wavelength conversion element characterized by comprising a structure. (4) In (11), the semiconductor material is Ga1-
xAA! xAs'i-In1-xGaxAsl-yPy
System・I n 1-x(y+ xsb 1-ypy system-"
Ga1-xM'xAs1-ySby system and In
A bidirectional wavelength conversion element characterized in that it is made of a 1-xGa xAs 1-YSby semiconductor material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57109549A JPS59977A (en) | 1982-06-25 | 1982-06-25 | Bidirectional wavelength conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57109549A JPS59977A (en) | 1982-06-25 | 1982-06-25 | Bidirectional wavelength conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59977A true JPS59977A (en) | 1984-01-06 |
Family
ID=14513054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57109549A Pending JPS59977A (en) | 1982-06-25 | 1982-06-25 | Bidirectional wavelength conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59977A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61150285A (en) * | 1984-12-24 | 1986-07-08 | Nec Corp | Wavelength conversion element |
| JPS62281381A (en) * | 1986-05-29 | 1987-12-07 | Mitsubishi Cable Ind Ltd | Photo-semiconductor element |
| WO1999052015A1 (en) * | 1998-04-02 | 1999-10-14 | Michael Scalora | Photonic signal frequency conversion using a photonic band gap structure |
| US5998822A (en) * | 1996-11-28 | 1999-12-07 | Nippon Steel Semiconductor Corp. | Semiconductor integrated circuit and a method of manufacturing the same |
| US6198151B1 (en) | 1997-10-24 | 2001-03-06 | Nippon Steel Semiconductor Corp. | Semiconductor device, semiconductor integrated circuit device, and method of manufacturing same |
-
1982
- 1982-06-25 JP JP57109549A patent/JPS59977A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61150285A (en) * | 1984-12-24 | 1986-07-08 | Nec Corp | Wavelength conversion element |
| JPS62281381A (en) * | 1986-05-29 | 1987-12-07 | Mitsubishi Cable Ind Ltd | Photo-semiconductor element |
| US5998822A (en) * | 1996-11-28 | 1999-12-07 | Nippon Steel Semiconductor Corp. | Semiconductor integrated circuit and a method of manufacturing the same |
| US6198151B1 (en) | 1997-10-24 | 2001-03-06 | Nippon Steel Semiconductor Corp. | Semiconductor device, semiconductor integrated circuit device, and method of manufacturing same |
| WO1999052015A1 (en) * | 1998-04-02 | 1999-10-14 | Michael Scalora | Photonic signal frequency conversion using a photonic band gap structure |
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