JPS599169A - Production of thin film - Google Patents
Production of thin filmInfo
- Publication number
- JPS599169A JPS599169A JP11615382A JP11615382A JPS599169A JP S599169 A JPS599169 A JP S599169A JP 11615382 A JP11615382 A JP 11615382A JP 11615382 A JP11615382 A JP 11615382A JP S599169 A JPS599169 A JP S599169A
- Authority
- JP
- Japan
- Prior art keywords
- target material
- target
- sputtering
- thin film
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はスパッタリングによる薄膜の製造方法に関し、
特には、膜厚方向で組成の異なる薄膜會スパッタリング
により製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film by sputtering,
In particular, it relates to a method for producing thin films with different compositions in the film thickness direction by sputtering.
スパッタリング法に、陽極および陰極１＃１１に高電圧
を印加して放電させるものであって、電離し几イオン（
Ａｒ＋など）が陰極上に置がれたターゲットに衝突し、
この結果ターゲット材料がはじき出され、これが基板に
付着されて薄膜が形成されるものである。そして、ター
ゲット材料を千〇″１ま付着させる場合と例えばターゲ
ット材料として金属を用い、これと雰囲気ガスとの間で
反応を生ぜせしめて酸化物、窒化物などの薄膜ヶ形成す
る反応性スパッタリングがある。In the sputtering method, a high voltage is applied to the anode and cathode 1#11 to cause discharge, and ionized ions (
Ar+, etc.) collides with a target placed on the cathode,
As a result, the target material is ejected and attached to the substrate to form a thin film. In the case where the target material is deposited, for example, a metal is used as the target material, and a reaction is caused between the metal and the atmospheric gas to form a thin film of oxides, nitrides, etc. using reactive sputtering. be.
また、高周波゛電圧を印加すれば、余端に加えて。Also, if you apply a high frequency voltage, in addition to the remaining end.
誘電体をスパッタすることもできる。Dielectrics can also be sputtered.
スパッタリングによれば、他の薄膜形成方法。According to sputtering, other thin film formation methods.
例えば真空蒸着法に比較して（１）優れた特性の薄膜が
得られる。（２）ターゲット材料を忠実に再現した薄膜
が得られる（％に合金の場合）などの利点を有すＱもの
の、一方において、大きい径のターゲット拐料の製作が
困難であるという問題があった。特にＧｄなどの非常に
酸化しやすい金属等にあっては合金の作成自体が非常Ｔ
Ｌ′ｌｄｌ。For example, compared to vacuum evaporation, (1) thin films with superior properties can be obtained. (2) Although it has the advantage of being able to obtain a thin film that faithfully reproduces the target material (in the case of a % alloy), on the other hand, there is a problem that it is difficult to produce a target material with a large diameter. . Especially when it comes to metals that easily oxidize, such as Gd, the creation of the alloy itself is very difficult.
L'ldl.
しいという問題があった・
この問題を解決する方法として、將開昭５７−４７８５
１号公報には、２挿ブ、１１の純粋な金属により厚さ方
向に一定に、かつ外岩面の成分比が形成すべき薄膜と一
致するようにしたターゲットが報告されている。そして
、現在は第１図に示すような金属Ａの円板に円柱状の不
透孔全穿ち、この孔中に他の全極ＢのＴ−７’７ドある
いは粉末】３全ターケツトの外表面が平滑になるように
入れたもの、また第２図に示すような余積Ａのターケラ
ト状１ ］’上に金４Ｂのチップ】５をを配置したもσ
）が提茶芒ｆＬでおり０合金にしなくともターケラト表
面のＩＨＪ積比會変えＱことにｊｌｌｌ’ｌｉｌ単にヌ
パソタリング薄膜の組成比音制御することかでさ０゜
しかしながら、最近、膜の特性を１８」止させるために
組成比？膜厚方向に対して変化させ足腺１に要求でれる
ことが多くなってきた。複数の１６５極（ｒｅ； ｇｙ
ｉ、 ）を真空槽内に設け、各々に組成の異なりターゲ
ットを配置し、基板１１１１σノ笥、極を順次移動略せ
て、スパッタリングする方法もあるが、装置が大型、複
雑になるばかりか、薄膜σノ組成比を漸時変化させたり
、連射７ε的ｒ変化させることは困難であった。As a way to solve this problem, the Sho Kai 57-4785
Publication No. 1 reports a target in which the thickness of the target is constant in the thickness direction using 2 inserts and 11 pure metals, and the component ratio of the outer rock surface matches that of the thin film to be formed. At present, as shown in Fig. 1, all cylindrical impermeable holes are drilled in the disk of metal A, and all other electrodes B (T-7'7 dots or powder) are placed outside the entire target. If the surface is made smooth, or if a gold 4B chip]5 is placed on top of a turcerate shape 1 with extra area A as shown in Fig.
), and it is possible to change the IHJ area ratio of the Tarkerat surface without using zero alloys.However, it is possible to simply control the composition ratio of the Nupasotaring thin film. 18” composition ratio to stop it? It has become increasingly common for foot glands 1 to be required to vary in the film thickness direction. Multiple 165 poles (re; gy
There is also a method in which sputtering is carried out by placing targets with different compositions in each vacuum chamber, and sequentially moving the substrate 1111σ and the pole, but this not only increases the size and complexity of the apparatus, but also makes it difficult to make thin films. It was difficult to gradually change the composition ratio of σ or to change the composition ratio of 7ε continuously.
本発明は、このような点に鑑み。スパッタリング中でも
容易にターゲット材料の表向積比を変化させて、ＩＩａ
の組成比を膜厚方向に対して変化させることのできるＮ
膜の製ｊ６方法を提供することケ目的とする。The present invention has been made in view of these points. By easily changing the surface area ratio of the target material even during sputtering, IIa
The composition ratio of N can be changed in the film thickness direction.
The object of the present invention is to provide a method for manufacturing a membrane.
すなわち、不発明の薄膜の製造方法は、２棟類以」二〇
材料ゲスバッタ材料としてスパッタリングを行なう薄膜
のｐ′！遣方法において、それぞれが表向にＭＷ出する
ように２棟類以上の相料で構成された第１のターゲツト
材上に２第１のターゲット４ｉ中の】揮以上で構成され
た第１のターゲツト材とは異ｆｘる第２のターケラト浩
を。That is, the uninvented thin film manufacturing method is based on two or more types of materials: p'! In the method, a first target material composed of two or more kinds of phase materials is placed on a first target material composed of two or more kinds of phase materials so that each material has a MW on the surface. A second Terkerato Hiroshi whose fx is different from the target material.
第１のターケラト相の一部が露出するように爪ね、第１
および第２のターゲツト材の少くとも一方を適宜同転移
ｉ１１υさせてスパッタリングすること？特徴とする。Turn the nail so that a part of the first Terkerat phase is exposed.
and sputtering at least one of the second target materials by appropriately causing the same transition i11υ? Features.
第３図は本発明に用いるス・ゼツタリングターゲットに
ついて示す斜視図であジ、材料Ａからなる部分１７とこ
れとは異なる材料Ｂからなる部分１９とから構成される
第１のターゲラｉ・材２１、および開口部２３を有する
第２のターゲツト材２５からなり、スパッタリングに際
しては第４図に示すように重ねて使用される。第４図は
、第２のターゲツト材２５が材料Ａで形成され、第１の
ターゲツト材２１の材料ＢＩＣ対応する部分が開口部と
なっている状態について示す斜視図である。第１および
第２のターゲツト材２】および２５から構成されるター
ゲットの９ ｔｉ」組成比は材料Ａ：材料Ｂ＝１：１な
ので。FIG. 3 is a perspective view showing the sintering target used in the present invention, in which the first target material is composed of a portion 17 made of material A and a portion 19 made of material B different from this. 21 and a second target material 25 having an opening 23, which are used in a stacked manner as shown in FIG. 4 during sputtering. FIG. 4 is a perspective view showing a state in which the second target material 25 is made of material A, and a portion of the first target material 21 corresponding to material BIC is an opening. The composition ratio of the target composed of the first and second target materials 2] and 25 is material A:material B=1:1.
このターゲツト材用いてスパッタリングを行なうと、こ
の組成比に対応し友薄膜が仕られる。When sputtering is performed using this target material, a thin film is formed corresponding to this composition ratio.
また、第５図のようにずらして車ねると（第４図のもの
紮２２．５°回転はせた状態）、ターゲットの表面組成
比はＡ：Ｂ＝３：１となり２スパツタリングによってイ
４Ｉられる薄膜もこれに応じて変化畑せることができる
。In addition, when the wheel is shifted and rotated as shown in Figure 5 (the one in Figure 4 is rotated 22.5 degrees), the surface composition ratio of the target becomes A:B = 3:1, and 2 sputtering results in 4I The thin film used can also be changed accordingly.
例えば、第６図に示すように、陰極２７上−に第１のタ
ーゲツト材２１および第２のターゲツト材２５を重ね、
対向する陽極２９上に基板３１？配設して両電極間に出
、圧が印加されると放電が起こり、 Ａｒ＋がターゲッ
トに叩きつけられ、原子３３が叩き出されて基板３１上
に薄膜が形成される。このとき、得られる薄膜の組成は
、第２のターゲツト材の表［ＴＩＪ積およびその組成と
、第２のターゲツト材２５によって覆われていない部分
の第１のターゲツト材２１の表面積およびその組成によ
って決定きれるので、各ターゲットの組成、第２のター
ゲットの開口部および両ターゲットの重ね合わせ方を制
御することにより薄膜の組成を厳しく調節でき、しかも
ヌ、ｏツタ中に第１もしくは第２あるいは双方のターゲ
ツト材を回転移動はせてターゲットの重ね合わせ方を変
化させることにより、薄１１Ｑ （Ｌ膜厚方向の組成を
連続的にあるいは段階的に任意に調節できる。For example, as shown in FIG. 6, the first target material 21 and the second target material 25 are stacked on the cathode 27,
A substrate 31 on the opposing anode 29? When placed and exposed between both electrodes, a discharge occurs when pressure is applied, Ar+ is struck against the target, atoms 33 are ejected, and a thin film is formed on the substrate 31. At this time, the composition of the thin film obtained is determined by the table [TIJ product and its composition of the second target material and the surface area and composition of the first target material 21 in the portion not covered by the second target material 25]. By controlling the composition of each target, the opening of the second target, and the way in which both targets are overlapped, the composition of the thin film can be precisely controlled. By rotating and moving the target material and changing the way the targets are superimposed, the composition in the thickness direction of the thin 11Q (L film) can be arbitrarily adjusted continuously or stepwise.
以上、第１のターケラト相が２棟類の材料か用いること
もできる。両ターゲット材の材料はスパッタリング可能
なものであれは持に問わず。As described above, it is also possible to use a material in which the first turcerate phase is two-layered. The materials for both targets can be sputtered or not.
金属（単体および合金）、非金属あ；ｒ；）Ｉ／−１は
酸化物などのそれらの化合物のいずれでもよい。Metals (elementary substances and alloys), non-metals (r;) I/-1 may be any of their compounds such as oxides.
また、第１のグーケラト相における材料Ａ。Also, material A in the first Gookerat phase.
Ｂの形状、および第２のターゲツト材の形状が扇形の場
合について説明したがこの形状は他の形状でもよい。し
かし、半径方形方向に対して対称な図形とすることによ
り、膜組成を均一にすることができる。Although the case where the shape of B and the shape of the second target material are fan-shaped has been described, this shape may be other shapes. However, by making the shape symmetrical with respect to the radial rectangular direction, the film composition can be made uniform.
第１図およびη４２図は従来１７Ｊターケットについて
示す斜視図である。
第３図は不発明において使用するターケラトの第１のタ
ーゲツト材および第２のターゲツト材を離間せしめた状
態について示す斜視図である。
第４図および第５図は不発明のターケラトにいて説明す
るための模式図である。
２１・・・第１のターゲツト材
２５・・・第２のターゲツト材
３】・・・基 板FIG. 1 and FIG. η42 are perspective views of a conventional 17J target. FIG. 3 is a perspective view showing a state in which the first target material and the second target material of the Tarkerat used in the invention are separated. FIGS. 4 and 5 are schematic diagrams for explaining the uninvented Tarkerat. 21...First target material 25...Second target material 3]...Substrate
Claims (1)
リングを行なう薄膜の製造方法において、それぞれが表
面に露出するように２種類以上の拐料で構成された第１
のターゲツト材上に、第１のターゲツト材中の１棟以上
で構成された第１のターゲツト材とは異なる第２のター
ゲツト材を、第１のターゲツト材の一部が露出するよう
に重ね、第１および第２のターゲツト材の少なくとも一
方？適宜回転移動させてスパッタリングすることを特徴
とする薄膜の製造方法。1. In a method for producing a thin film in which sputtering is performed using two or more types of sputtering materials, the first sputtering material composed of two or more types of sputtering materials is
overlaying a second target material different from the first target material, which is composed of one or more structures in the first target material, on the target material so that a part of the first target material is exposed; At least one of the first and second target materials? A method for producing a thin film, characterized by sputtering with appropriate rotational movement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11615382A JPS599169A (en) | 1982-07-06 | 1982-07-06 | Production of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11615382A JPS599169A (en) | 1982-07-06 | 1982-07-06 | Production of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599169A true JPS599169A (en) | 1984-01-18 |
| JPH0314904B2 JPH0314904B2 (en) | 1991-02-27 |
Family
ID=14680070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11615382A Granted JPS599169A (en) | 1982-07-06 | 1982-07-06 | Production of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599169A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202925A (en) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | Sputtering target and sputtering method |
| EP0197185A2 (en) * | 1985-04-11 | 1986-10-15 | Kernforschungszentrum Karlsruhe Gmbh | Multilayered and highly wear-resistant protective coating of hard material for metallic surfaces or substrates subjected to a high load |
| EP0302684A2 (en) * | 1987-08-06 | 1989-02-08 | Gec-Marconi Limited | Thin film deposition process |
| EP0489396A1 (en) * | 1990-12-06 | 1992-06-10 | Multi-Arc Oberflächentechnik GmbH | Segmented cathode for arc-discharge coating |
-
1982
- 1982-07-06 JP JP11615382A patent/JPS599169A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202925A (en) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | Sputtering target and sputtering method |
| EP0197185A2 (en) * | 1985-04-11 | 1986-10-15 | Kernforschungszentrum Karlsruhe Gmbh | Multilayered and highly wear-resistant protective coating of hard material for metallic surfaces or substrates subjected to a high load |
| US4835062A (en) * | 1985-04-11 | 1989-05-30 | Kernforschungszentrum Karlsruhe Gmbh | Protective coating for metallic substrates |
| EP0302684A2 (en) * | 1987-08-06 | 1989-02-08 | Gec-Marconi Limited | Thin film deposition process |
| EP0489396A1 (en) * | 1990-12-06 | 1992-06-10 | Multi-Arc Oberflächentechnik GmbH | Segmented cathode for arc-discharge coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0314904B2 (en) | 1991-02-27 |
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