JPH0459605A - Production of superconductor thin film - Google Patents
Production of superconductor thin filmInfo
- Publication number
- JPH0459605A JPH0459605A JP2171965A JP17196590A JPH0459605A JP H0459605 A JPH0459605 A JP H0459605A JP 2171965 A JP2171965 A JP 2171965A JP 17196590 A JP17196590 A JP 17196590A JP H0459605 A JPH0459605 A JP H0459605A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- lead
- power source
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- -1 lead oxide ions Chemical class 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 18
- 230000001133 acceleration Effects 0.000 abstract description 5
- 230000007704 transition Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 7
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- 235000008708 Morus alba Nutrition 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は超電導体薄膜のｗＡ造方法に係り、特に、高品
質な高ＴＣ相からなるＢ１系超電ｉ９薄膜の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a superconductor thin film wA, and in particular to a method for manufacturing a B1-based superconductor i9 thin film consisting of a high-quality, high-TC phase.
（従来の技術）
近年、酸化物系超電導体物質が発見されて以来、これら
の物質の転移温度（Ｔｃ）が高いことから注目を集め、
実用化を目指し各分野において研究が行われている。酸
化物系ＨＡ電導体の中でも、Ｂ１系酸化掬超電導体は、
超電導現象を起こす臨界温度ＴＣが１１０に程度の高ｒ
Ｃ相（８＋ ： Ｓｒ： Ｃａ： Ｃｕ＝２：２：２：
３）が存在する口とが知られている。(Prior art) Since the discovery of oxide-based superconducting materials in recent years, these materials have attracted attention due to their high transition temperatures (Tc).
Research is being conducted in various fields with the aim of practical application. Among oxide-based HA conductors, B1-based oxidized superconductors are
The critical temperature TC for superconducting phenomenon is as high as 110 r
C phase (8+: Sr: Ca: Cu=2:2:2:
3) is known to exist.
ところが、もう一つの相として８０に程度の低ＴＣ相（
Ｂｉ：Ｓｒ：Ｃａ：Ｃｕ＝２ ： ２ ： １ ： ２
）が存在するが、この相は高Ｔｃ相より生成しやすいた
め、高Ｔｃの単一相を得ることは容易ではなかった。However, another phase is a low TC phase of about 80 (
Bi:Sr:Ca:Cu=2:2:1:2
), but since this phase is easier to generate than the high-Tc phase, it has not been easy to obtain a single high-Tc phase.
ところが、Ｂ１の一部をｐｂに置換することにより、高
Ｔｃ相の生成が容易になる口とが見出された（ＪＪＡＰ
、 Ｖｏｌ、２７．Ｎｏ、６．Ｊｕｎｅ、１９８８．ｐ
ｐ、Ｌ１０４１−１．１０４３）。However, it was discovered that by substituting a part of B1 with pb, the formation of a high Tc phase becomes easier (JJAP
, Vol, 27. No, 6. June, 1988. p
p, L1041-1.1043).
しかし、ｐｂまたはｐｂ酸化物は他の構成要素に比較し
て蒸気圧が非常に高いため、作業中に抜けやすいという
欠点があった。バルクの場合は表面のｐｂが多少抜けた
としても特性への影響はほとんどないが、ｉ膜の場合は
大きく影響する。However, since pb or pb oxide has a very high vapor pressure compared to other components, it has the disadvantage that it easily escapes during work. In the case of bulk, even if some Pb is removed from the surface, it has little effect on the characteristics, but in the case of i-film, it has a large effect.
この様な問題を解決するために、従来、原材料の組成比
において、ｐｂが過剰となる様に調整する方法（ＡＤｐ
ｌ、Ｐｈｙ、１−ｅｔｔ、５５（１５）、９０ｃｔｏｂ
ｅｒ １９９８）、ボスｌルアコールにおいてｐｂ雰囲
気を用いる方法（特Ｒ昭６４−１２２９０９１、あるい
は、組成原素を独立に１ｉｌＪ ＩＩＩするために、多
元蒸発源による成膜方法が行われていた。In order to solve such problems, conventional methods have been used to adjust the composition ratio of raw materials so that Pb is in excess (ADp
l, Phy, 1-ett, 55(15), 90ctob
er 1998), a method using a PB atmosphere in Vosl Ruacol (Patent R. Sho 64-1229091), or a film forming method using multiple evaporation sources in order to independently separate the constituent elements.
（発明が解決しようとする課題）
従来の原材料の組成比を調整する方法では、膜の組成が
成膜中に変化する等の欠点があり、Ｐｂ雰囲気中による
ボストアニールの方法では、表面性が変化するという問
題点があった。また、多元蒸発源による成膜方法におい
ては、装置が？！錐となり高価なものとなる等の欠点が
あった。(Problems to be Solved by the Invention) The conventional method of adjusting the composition ratio of raw materials has drawbacks such as the composition of the film changing during film formation, and the method of boss annealing in a Pb atmosphere has problems with surface properties. The problem was that it changed. Also, in the film formation method using multiple evaporation sources, what kind of equipment is used? ! It had drawbacks such as being a cone and being expensive.
また、上述の様に、Ｂｉ系酸化物超電導体はｐｂを添付
することにより、高Ｔｃ相が容易に得られるようになる
が、基板にＢｉ系酸化物超電導体を形成する場合には、
成膜時の基板温度を７００〜８５０°Ｃの高温にする必
要があることから、ｐｂを添加してもｐｂやｐｂ酸化物
が基板上で再蒸発し、実際には膜中にｐｂはほとんど残
らず、この傾向は、基板温度が高い程著しいものがあっ
た。Furthermore, as mentioned above, a high Tc phase can be easily obtained by adding PB to a Bi-based oxide superconductor, but when forming a Bi-based oxide superconductor on a substrate,
Since it is necessary to raise the substrate temperature during film formation to a high temperature of 700 to 850°C, even if PB is added, PB and PB oxide re-evaporate on the substrate, and in reality, there is almost no PB in the film. This tendency was more pronounced as the substrate temperature was higher.
（３題を解決するための手段）
本発明は上記課題を解決するためになされたものであり
、酸化物系超電導体からなる薄膜を真空薄膜形成手段を
用いて、基板上に成膜する超電導体薄膜の製造ｒ５八に
おいて、前記薄膜の形成に際し、前、２薄膜号船雰囲気
中において成膜し、前記薄膜中に鉛を含まぜたことを特
徴とした超電４鉢簿膜の製造方法を提供しようするたち
のである。(Means for Solving the Three Problems) The present invention has been made to solve the above problems, and is a superconducting method in which a thin film made of an oxide-based superconductor is formed on a substrate using a vacuum thin film forming means. A method for producing a superelectric 4-pot film, characterized in that in the production of a body thin film R58, the thin film is formed in the atmosphere of a 2-thin film ship, and lead is included in the thin film. We are trying to provide the following.
（実施例）
本発明は、基板上に形成されるＢ１系酸化物超電導体の
薄膜にｐｂを添加するに際して、イオンヒームアシスト
蒸着法やイオンビームスパッタ法等において用いられる
イオンビームガンにより、ｐｂｅ化物イオンを発生せし
め、成膜中にこのイオンを基板に照射することによりｐ
ｂを薄膜中に添加するものである。(Example) In the present invention, when adding pb to a thin film of a B1-based oxide superconductor formed on a substrate, the pbe compound is By generating ions and irradiating the substrate with these ions during film formation, p
b is added to the thin film.
第１図は一般的なイオンガン１０を説明するための説明
図であり、以下同図を用いて説明する。FIG. 1 is an explanatory diagram for explaining a general ion gun 10, and the following description will be made using the same diagram.
同図において、１１は真空容器であり、この中にフィラ
メント１２．７ノード電極１３が封入され、更に、この
真空容器１１内には、＾ｒガス等からなるガス分丁か満
たされている。In the figure, reference numeral 11 denotes a vacuum container, in which a filament 12, 7 node electrodes 13 are sealed, and further, the vacuum container 11 is filled with a gas compartment made of ^r gas or the like.
真空容器１１の外部には、イオン化効率を高めるための
マグネット１４が配設され、容器１１の開口部近隣には
、スクリーングリッド１５、イオンを外部に取り出すた
めのグリッド電極１６が設けられている。A magnet 14 is provided outside the vacuum container 11 to improve ionization efficiency, and near the opening of the container 11, a screen grid 15 and a grid electrode 16 for extracting ions to the outside are provided.
そして、フィラメント１２．７ノード１３、マグネット
１４及びグリッド電極には必要電源１７．１８．１９、
がそれぞれ図示の様に接続されると共に、フィラメント
１２にはイオンを加速するための加速電源２０の正極が
接続されている。And the power supply required for the filament 12.7 node 13, magnet 14 and grid electrode 17.18.19,
are connected as shown in the figure, and the positive electrode of an acceleration power source 20 for accelerating ions is connected to the filament 12.
約１０〜’Ｔｏｒｒ程度の真空容器１１の中で、フイラ
メン１−１２から放出された熱電子は、７ノードによっ
て加速され、この方向に向かうが、アノード１２に到達
する間に真空容器１１内のアルゴン等のガス分子と衝突
し、ブラズー７が発生する。Thermionic electrons emitted from the filament 1-12 in the vacuum chamber 11 at a pressure of about 10 to 10 Torr are accelerated by the 7 nodes and head in this direction, but while reaching the anode 12, the thermoelectrons inside the vacuum chamber 11 are It collides with gas molecules such as argon, and Blaze 7 is generated.
ここで生成発生したＡｒ＋等のイオンはグリッド電極１
６によって外部に引き出され、例えば、図示しない基板
等に照射される。この時、引き出されたイオンは加速電
源２０の作用により２００〜２００（ｌｅＶのエネルギ
ーを有している。Ions such as Ar+ generated here are transferred to the grid electrode 1.
6, and irradiates it onto, for example, a substrate (not shown). At this time, the extracted ions have an energy of 200 to 200 leV due to the action of the accelerating power source 20.
本発明において使用されるイオンガンは、上記イオンガ
ンのアノード１３′の一部にＰｂＯ板やＰｂ板を固定し
たしのか用いられる。The ion gun used in the present invention uses a PbO plate or a Pb plate fixed to a part of the anode 13' of the ion gun.
第２図は本発明に使用されるイオンガン３０の概略説明
図であり、同図においＣ１３１は７ノード１３上に形成
されたＰｂＯ板である。FIG. 2 is a schematic explanatory diagram of the ion gun 30 used in the present invention, in which C131 is a PbO plate formed on the seven nodes 13.
本発明では、ＰｂＯ板３板厚１嘉１１内に発生した、例
えばＡｒイオンによりスパッタリングされ、一部イオン
化されたＰｂ１ｒｊ子をＡ「イオンと〜緒に外部に引き
出し、基板に照射するものである。In the present invention, Pb1rj particles, which are sputtered and partially ionized by, for example, Ar ions, generated within the PbO plate 3 and 11 mm in thickness are pulled out together with A' ions and irradiated onto the substrate. .
次に、イオンビームスパッタ法を用いてＢ１酸化物超電
導体を基板上に成膜するに際して、上記イオンガン３０
を用いた実ｌＪＩ！ｉ例と、比較例について説明する。Next, when depositing the B1 oxide superconductor on the substrate using the ion beam sputtering method, the ion gun 30 is
Real lJI using! An example i and a comparative example will be explained.
［比較が１１１ イオンビームスパッター法の条件は次の通りである。[Comparison is 111 The conditions for the ion beam sputtering method are as follows.
ターゲット材料組成：
８ｉ：Ｐｂ：Ｓｒ：Ｃａ：Ｃｕ：Ｏ＝２．３：２：２：
２．２：３．３：ｘターゲットの大きさ：５″φ、
成膜速度： ０．５Ａ／ｓｅｃ、
桑空度： ３ｘ１０−４Ｔｏｒｒ、
酸素カス流量： ＋０ｓＣｃＨ１
膜厚 ：０６ μ１１
基板の材質；ＨすＯ単結晶板（１００）基板温度二６８
０″Ｇ、
［比較例２１
イオンビーム法の条件は次の通り
基板温度ニア３０℃、
他は［比較例１］と同条付。Target material composition: 8i:Pb:Sr:Ca:Cu:O=2.3:2:2:
2.2:3.3:x Target size: 5″φ, Film formation rate: 0.5A/sec, Mulberry airflow: 3x10-4Torr, Oxygen gas flow rate: +0sCcH1 Film thickness: 06μ11 Substrate material; HsO single crystal plate (100) substrate temperature 268
0″G, [Comparative Example 21] The conditions for the ion beam method were as follows: substrate temperature near 30°C, and other conditions were the same as [Comparative Example 1].
［比較例３１ イオンビームの条件は［比較例１］と同じ。[Comparative Example 31 The ion beam conditions are the same as [Comparative Example 1].
イオンど−ムアシストの茶汁は次の通りである。The tea juice of Aeon Dome Assist is as follows.
加速型ｒｆＸ： ４００Ｖ、
ｅ’−ムｉ ′ｅＬ： ５０ｍＡ、
ｉンシストガス：八ｒ ＋０２ （５０％）、［実施例
］
イオンビームの条件は「比較例１」と同じ。Acceleration type rfX: 400V, e'-mui'eL: 50mA, i-insist gas: 8r+02 (50%), [Example] The ion beam conditions are the same as in "Comparative Example 1".
イオンビームアシスト条件は［比較例３１と同じである
が但し、アノード１３に対するＰｂＯ板３板金１積が３
０％となるようにＰｂＯ板３板金１ノード１３に固着し
たイオンガン３０を用いた。The ion beam assist conditions were [same as those in Comparative Example 31, except that the number of PbO plates 3 and 1 sheet metal stack for the anode 13 was 3
An ion gun 30 was used that was fixed to three PbO plates, one metal plate, and one node 13 so that the concentration was 0%.
表１は各資料のＥ Ｐ Ｍ Ａ （ｅｌｅｃｔｒｏｎ
ｐｒｏｂｅ ｍ１ｃｒ。Table 1 shows the EPM A (electron
probe m1cr.
ａｎａｌｙＺｅｒ）による分析結果についＵ、Ｓｒを２
．０に規格化して示したしのである。Regarding the analysis results by analyzeZer), U and Sr were 2
．． It is shown normalized to 0.
表 １
表１から明らかな様に、ＰｂＬｊ！、外の元素について
は、その組成比はほとんど試料間に差がないのに対して
、ｐｂの組成比に注目すると、実施例のものは伯の資料
より約２倍程の組成比となっている。Table 1 As is clear from Table 1, PbLj! Regarding the other elements, there is almost no difference in their composition ratios between the samples, whereas when looking at the composition ratio of PB, the composition ratio of the example is about twice that of Haku's material. There is.
表２は、Ｘ線回折法で調べた各試料の結晶性と、高［Ｃ
相とをまとめた表であり、実施例のものは結晶性が優れ
、しかも高Ｔｃ相が見られることが分かる。Table 2 shows the crystallinity of each sample examined by X-ray diffraction and the high [C
This is a table summarizing the phases, and it can be seen that the examples have excellent crystallinity and also have a high Tc phase.
この方払はＢ１素の超電導体薄膜に適用されるだけでな
り、ＴＩ系等のものにも勿１．ｉｉｉ有効Ｃある。This method is only applied to superconductor thin films of B1 element, and of course applies to TI-based ones as well. iii Effective C exists.
また、イオン添加は、酸化雰囲気中で行うため、酸化鉛
を使う必要はなく、金属鉛を用いてもよい。Further, since the ion addition is performed in an oxidizing atmosphere, it is not necessary to use lead oxide, and metallic lead may be used.
表 ２
（発明の効果）
上述の様に本発明によれば、基板上に酸化物系超電導体
層を形成する超電導体薄膜の製造方法において、成膜中
に鉛または鉛酸化物のイオンを基板に照射する口とを特
徴としたｉＩＡ電導体薄膜の製造方法を用いたことによ
り、結晶化に際して温度を上げることなく、超電導体薄
膜の中に高Ｔｃ相を実現するためのｐｂを添加すること
が可能になり、超宙導対、１ｇ！のデバイスへの多方面
の応用に有効な起電Ｓ薄膜の製造方法の促供を可能とす
るしのぐある。Table 2 (Effects of the Invention) As described above, according to the present invention, in the method for manufacturing a superconductor thin film in which an oxide-based superconductor layer is formed on a substrate, lead or lead oxide ions are added to the substrate during film formation. By using the iIA conductor thin film manufacturing method, which is characterized by a irradiation port, it is possible to add PB to realize a high Tc phase in the superconductor thin film without raising the temperature during crystallization. is now possible, Super Space Guide Couple, 1g! There is an advantage that enables the production of electromotive S thin films that are effective for a wide range of applications in devices.
第１図は、−船釣なイオンガンを説明するための説明図
。第２図は、本発明に使用されるイオンガンの概略説明
図である。
１１・・・真空 、１２・・・フィラメント１３・
・・アノード 、１４・・・マグネット１５・・・スク
リーングリッド
１６・・・グリッド電極、２０・・・加速電源３１・・
・ＰｂＯ板。
特 許 出願人 日本ビクター株式会社代表者 切上
卓部FIG. 1 is an explanatory diagram for explaining an ion gun for boat fishing. FIG. 2 is a schematic explanatory diagram of an ion gun used in the present invention. 11...Vacuum, 12...Filament 13.
... Anode, 14... Magnet 15... Screen grid 16... Grid electrode, 20... Acceleration power source 31...
・PbO board. Patent Applicant: Japan Victor Co., Ltd. Representative Kirigami
Table section
Claims (1)
の製造方法において、成膜中に鉛または鉛酸化物のイオ
ンを基板に照射することを特徴とした超電導体薄膜の製
造方法。A method for producing a superconductor thin film in which an oxide-based superconductor layer is formed on a substrate, the method comprising irradiating the substrate with lead or lead oxide ions during film formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2171965A JPH0459605A (en) | 1990-06-28 | 1990-06-28 | Production of superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2171965A JPH0459605A (en) | 1990-06-28 | 1990-06-28 | Production of superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459605A true JPH0459605A (en) | 1992-02-26 |
Family
ID=15933043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2171965A Pending JPH0459605A (en) | 1990-06-28 | 1990-06-28 | Production of superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459605A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030030768A (en) * | 2001-10-12 | 2003-04-18 | 주식회사 엘지이아이 | Plasma continuous deposition apparatus having magnet |
| US8488241B2 (en) | 2008-07-07 | 2013-07-16 | Sony Corporation | Optical film and method for manufacturing the same, antiglare polarizer, and display apparatus |
| US8747991B2 (en) | 2008-12-29 | 2014-06-10 | Sony Corporation | Optical device, method for manufacturing the same and display device |
-
1990
- 1990-06-28 JP JP2171965A patent/JPH0459605A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030030768A (en) * | 2001-10-12 | 2003-04-18 | 주식회사 엘지이아이 | Plasma continuous deposition apparatus having magnet |
| US8488241B2 (en) | 2008-07-07 | 2013-07-16 | Sony Corporation | Optical film and method for manufacturing the same, antiglare polarizer, and display apparatus |
| US8747991B2 (en) | 2008-12-29 | 2014-06-10 | Sony Corporation | Optical device, method for manufacturing the same and display device |
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