JPS5984515A - Marking to semiconductor substrate by laser light - Google Patents
Marking to semiconductor substrate by laser lightInfo
- Publication number
- JPS5984515A JPS5984515A JP19557182A JP19557182A JPS5984515A JP S5984515 A JPS5984515 A JP S5984515A JP 19557182 A JP19557182 A JP 19557182A JP 19557182 A JP19557182 A JP 19557182A JP S5984515 A JPS5984515 A JP S5984515A
- Authority
- JP
- Japan
- Prior art keywords
- laser light
- semiconductor substrate
- pulse
- laser beam
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はレーザ光によって半導体基板にマークを形成
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of forming marks on a semiconductor substrate using laser light.
半導体装置は、インゴットから切シ出された半導体基板
の両面を研摩加工したのち、その一方の面に素子を形成
することによって作られる。A semiconductor device is manufactured by polishing both sides of a semiconductor substrate cut out from an ingot, and then forming an element on one side.
このようにして作られる半導体装置は、外観上どのよう
な種類のものであるかを判別しすらいため、その製造工
程において第１図に示すように半導体基板ａに素子の種
類やロフトを識別することのできる多数のドツトｂ・・
・からなるマークＣをレーザ光によって付すようにして
いる。In order to distinguish the type of semiconductor device manufactured in this way from its appearance, the type and loft of the elements are identified on the semiconductor substrate a during the manufacturing process, as shown in Figure 1. A large number of dots that can be...
・A mark C consisting of the following is attached using a laser beam.
このマークＣを形成するドツトｂ・・・は、上記半導体
基板ａに所定の深さで形成されていなければ、半導体装
置の製造途中や終了後に上記半導体基板ａに形成される
被膜によって埋められてしまうので、識別することがで
きなくなってしまう。If the dots b . . . forming the mark C are not formed at a predetermined depth on the semiconductor substrate a, they will be buried by a film formed on the semiconductor substrate a during or after manufacturing the semiconductor device. Because it is hidden away, it becomes impossible to identify it.
従来、上記ドツトｂを所定の深さに形成するためには、
半導体基板ａを所定の深さに溶融除去することのできる
大きなエネルギのレーザ光を１パルス照射することによ
って行なっていた。Conventionally, in order to form the dots b to a predetermined depth,
This is done by irradiating one pulse of high-energy laser light that can melt and remove the semiconductor substrate a to a predetermined depth.
すると、第２図に示すように溶融除去された溶融物ｄが
ドラ）ｂの周辺部に高く堆積してしまったシ、上記半導
体基板ａから飛散する飛散物ｅがドラ）ｂの周辺部に付
着するということが発生する。そのため、上記溶融物ｄ
の高さ寸法 □が半導体基板ａの面に素子を形成
する吉きの許容誤差以上となったシ、飛散物ｅが製造工
程の途中ではく離するなどして半導体基板ａＫ素子を確
実に形成することができなくなるという間知があった。Then, as shown in FIG. 2, the molten material d that was melted and removed was deposited at a high level around the periphery of the drum (b), and the scattered material e scattered from the semiconductor substrate a was deposited on the periphery of the drum (b). Adhesion occurs. Therefore, the above melt d
If the height dimension □ exceeds the acceptable tolerance for forming an element on the surface of the semiconductor substrate a, the scattered particles e will be peeled off during the manufacturing process to ensure the formation of an element on the semiconductor substrate aK. I had the sudden knowledge that I would no longer be able to do that.
この発明は、溶融物が許容以上の高さ寸法で堆積したり
、飛散物が発生して半導体展板に付着するなどのことな
く所定深さのマークをレーザ光によって形成することが
できるようにしたマーキング方法を提供することにある
。This invention makes it possible to form marks with a predetermined depth using a laser beam without causing molten material to accumulate at a height that exceeds the allowable height, and without causing scattered objects to adhere to the semiconductor rolling board. The objective is to provide a marking method.
半導（＊基板の同一個所に複数のパルスレーザ光を、各
パルス毎におけるレーザ光のスポット径を順次小さくし
て照射することにより、エネ／Ｉ／ キノ小８なレーザ
光で所定深さのマークラ形成することができるようにし
たものである。Semiconductor (*By irradiating multiple pulsed laser beams to the same location on a substrate, with the spot diameter of the laser beam gradually decreasing for each pulse, energy/I/ This makes it possible to form marks.
〔発明の実施例〕
以下、この発明の一実施例を第３図乃至第６図を参照し
て説明する。まず、第３図に示すように半導体基板ａの
マークＣを形成すべき個所に第１のレーザ光り、を１パ
ルス照射する。このときの第１のレーザ光り、のエネル
ギは、上記半導体基板ａから飛散物ｅを蒸発飛散させる
ことがなく、しかも周辺部に盛り上がる第１の溶融物１
１の高さ寸法が素子形成における許容誤差以下の寸法と
なる大きささする。しだがって、第１のレーザ光り、の
１パルス（（よって上記半導体基板ａに形成される２ｆ
５１の凹所Ｉ２の深さ寸法は、マークＣを形成するドラ
）ｂの最終深さ寸法に比べてかなり浅い寸法である。ま
た、このときの第１のレーザ光Ｌ Ｉ のスポット径を
Ｄｌとする。[Embodiment of the Invention] An embodiment of the invention will be described below with reference to FIGS. 3 to 6. First, as shown in FIG. 3, one pulse of the first laser beam is irradiated onto a portion of the semiconductor substrate a where the mark C is to be formed. The energy of the first laser beam at this time is such that it does not evaporate and scatter the scattered objects e from the semiconductor substrate a, and moreover, the first melted object 1 that rises in the peripheral area
The height dimension of 1 is set to a size that is less than the allowable error in element formation. Therefore, one pulse of the first laser beam ((therefore, 2f formed on the semiconductor substrate a)
The depth dimension of the recess I2 of 51 is considerably shallower than the final depth dimension of the drum (b) forming the mark C. Further, the spot diameter of the first laser beam L I at this time is assumed to be Dl.
つぎに、第４図に示すように第１のレーザ光Ｌ１ と光
軸を一致させて第２のレーザ光Ｌ２を上記第１の凹所１
２に１パルス照射する。この第２のレーザ光Ｌ２は、第
１のレーザ光り、に比べてエネルギが同じもしくはそれ
以下でおるとともに、スポット径Ｄ２が第１のレーザ光
Ｌ１のスポット径り、 よりも小さくなっている。Next, as shown in FIG. 4, the optical axis of the first laser beam L1 is aligned with the second laser beam L2, and the second laser beam L2 is directed into the first recess 1.
2 and 1 pulse irradiation. The second laser beam L2 has the same or less energy as the first laser beam, and the spot diameter D2 is smaller than the spot diameter D2 of the first laser beam L1.
しだがって、第２のレーザ光Ｌ２により第１の凹所１２
の底面が照射溶融され、この第１の凹所１２の底面に第
２の凹所Ｉ３が形′成されるとともに、この底面の周辺
部に第２の溶融物１４が堆積する。さらに、第２の凹所
Ｉ３の底面に第５１閾に示すように第２のレーザ光り、
とエネルギが同じもしくばそれ以下で、スポット径Ｄ３
が第２のレーザ光Ｌ２のスポット径Ｄ２よりも小さな第
３のレーザ光ＬＩｌを照射し、第２の凹所１３の底面に
第３の凹所１５を形成し、このときに生じる第３の溶融
物１６を上記第３の凹所１５や周辺部に堆積させる。そ
して、さらに第３の凹所Ｉ５の底面を第６図に示すよう
にエネルギが第３のレーザ光Ｌ８と同じもしくはそれ以
下で、スポット径Ｄ４が第３のレーザ光Ｌ３よシも小さ
な第４のレーザブｅＬ＋で照射すれば、第４の凹所１７
が形成されるとともに、このときに生じる第４の溶融物
１８は第４の凹所１７の周辺部に堆積する。Therefore, the first recess 12 is illuminated by the second laser beam L2.
The bottom surface of the first recess 12 is irradiated and melted, and a second recess I3 is formed on the bottom surface of the first recess 12, and a second melt 14 is deposited around the bottom surface. Furthermore, a second laser beam is emitted on the bottom surface of the second recess I3 as shown in the 51st threshold,
The energy is the same as or less than that, and the spot diameter D3
irradiates the third laser beam LII smaller than the spot diameter D2 of the second laser beam L2 to form the third recess 15 on the bottom surface of the second recess 13, and the third recess generated at this time. The melt 16 is deposited in the third recess 15 and the surrounding area. Further, as shown in FIG. 6, the bottom surface of the third recess I5 is a fourth laser beam whose energy is the same as or less than that of the third laser beam L8 and whose spot diameter D4 is smaller than that of the third laser beam L3. If irradiated with the laser beam eL+, the fourth recess 17
is formed, and the fourth melt 18 produced at this time is deposited around the periphery of the fourth recess 17.
したがって、上記半導体基板ａによれば、その同一個所
に順次形成される第１乃至第４の凹所Ｚ ２１ ｚ ｓ
＋ ｚ ５ ｒ ｚ ７によって十分な深さをもった
ドラ）ｂとすることができる。そして、このようなドツ
トｂを形成するに際し、第１乃至第４のレーザ光Ｌｌ
＋ Ｌ２ ＋ Ｌｓ ＋ Ｌ４のエネルギは、半導体
基板ａから飛散物ｅを発生させることのない大きさであ
るから、上記半導体基板ａの表面に飛散物ｅが何着する
ことがなく、寸た第１のレーザ光り、によって半導体栽
板ａの表面に堆積する第１の溶融物１１の高さ寸法は、
この表面に素子を形成するのに差し支えのない許容誤差
以下とすることができる。Therefore, according to the semiconductor substrate a, the first to fourth recesses Z 21 z s sequentially formed at the same location
+ z 5 r z 7 allows a drum) b with sufficient depth. When forming such dots b, the first to fourth laser beams Ll
Since the energy of + L2 + Ls + L4 is of a magnitude that does not generate any flying debris e from the semiconductor substrate a, the flying debris e will not land on the surface of the semiconductor substrate a, and the The height dimension of the first melt 11 deposited on the surface of the semiconductor planting board a by the laser beam 1 is as follows:
The error can be kept within a tolerance that does not cause any problem in forming elements on this surface.
実験によれば、第１の凹所１２の直径を１００〜２００
μｍとしたときに、第１の溶融物１１の高さ寸法を１μ
ｍ以下とすることができた。According to experiments, the diameter of the first recess 12 is 100 to 200 mm.
When μm, the height dimension of the first melt 11 is 1 μm.
m or less.
なお、上記一実施例では、半導体基板の同一個所にレー
ザ光を４回照射してドツトを形成しだが、１つのドツト
を形成するために照射するレーザ光の回数は４回以上あ
るいはそれ以下であってもよく、要は複数回であればよ
い。Note that in the above embodiment, the dots are formed by irradiating the same location of the semiconductor substrate with laser light four times, but the number of times of laser light irradiation to form one dot may be four or more or less. It may occur, as long as it occurs multiple times.
以上述べたようにこの発明は、半導体基板の同一個所に
複数のパルスレーザ光を、各パルス毎におけるレーザ光
のス、ポット径を順次小さくして照射するようにしたか
ら、パルスレーザ光のエネルギを小さくしても、上記半
導体基板シ複数のパルスレーザ光によって所望する深さ
のマークを形成することができる。すなわち、半導体基
板から飛散物を発生させたシ、溶融物を許容誤差以上の
高さ寸法で堆積させることなく所望する深さのマークを
形成することができるので、従来のように半導体基板の
表面に飛散物が付着したり、溶融物が許容誤差以上の高
さで堆積して素子を確実に形成することができなくなる
ということがない。As described above, the present invention irradiates a plurality of pulsed laser beams onto the same location on a semiconductor substrate by sequentially decreasing the spot diameter of the laser beam for each pulse. Even if the depth is made small, a mark with a desired depth can be formed on the semiconductor substrate using a plurality of pulsed laser beams. In other words, it is possible to form a mark of a desired depth without causing scattering particles from the semiconductor substrate or depositing molten material with a height dimension that exceeds the allowable error. There is no possibility that flying objects will adhere to the surface of the device, or that melted material will not accumulate at a height exceeding the allowable error, making it impossible to reliably form the element.
第１図はマークが付された半導体基板の一部を示す平面
図、第２図はレーザ光を１回照射するだけでマークを形
成する従来の方法を説明する断面図、第３図乃至第６図
はこの発明による複数のパルスレーザ光によってマーク
を形成する方法を順次示した断面図である。
ａ・・・半導体基板、１２，１３，１５．１７・・・第
１乃至第４の凹所、Ｌ、〜Ｌ４・・・負）１乃至第４の
レーザ光。FIG. 1 is a plan view showing a part of a semiconductor substrate on which a mark is attached, FIG. 2 is a cross-sectional view illustrating a conventional method of forming a mark by just irradiating a laser beam once, and FIGS. FIGS. 6A and 6B are cross-sectional views sequentially showing a method of forming marks using a plurality of pulsed laser beams according to the present invention. a... Semiconductor substrate, 12, 13, 15.17... First to fourth recesses, L, to L4... Negative) First to fourth laser beams.
Claims (1)
において、上記半導体基板の同一個所に複数のパルスレ
ーザ光を、各パルス毎におけるレーザ光のスポット径を
順次小さくして照射することを特徴とするレーザ光によ
る半導体基板へのマーキング方法。A method of forming a mark by irradiating a semiconductor substrate with i-laser light, characterized in that a plurality of pulsed laser beams are irradiated onto the same location of the semiconductor substrate, with the spot diameter of the laser beam being successively reduced for each pulse. A method of marking semiconductor substrates using laser light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19557182A JPS5984515A (en) | 1982-11-08 | 1982-11-08 | Marking to semiconductor substrate by laser light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19557182A JPS5984515A (en) | 1982-11-08 | 1982-11-08 | Marking to semiconductor substrate by laser light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5984515A true JPS5984515A (en) | 1984-05-16 |
Family
ID=16343334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19557182A Pending JPS5984515A (en) | 1982-11-08 | 1982-11-08 | Marking to semiconductor substrate by laser light |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984515A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2809541A1 (en) * | 2000-05-24 | 2001-11-30 | Komatsu Mfg Co Ltd | Micropoint marking shape is formed with laser beam; micropoint marking is formed at each individual wafer illumination point; marker has protrusion from surface of wafer in central section |
| DE19956107B4 (en) * | 1998-11-25 | 2008-01-24 | Komatsu Ltd. | Shape of a micromarking made by a laser beam and method of micromarking |
| JP2013517000A (en) * | 2010-01-20 | 2013-05-16 | テン メディア，エルエルシー | Systems and methods for processing eggs and other objects |
| JP2013211541A (en) * | 2012-02-28 | 2013-10-10 | Kyocera Corp | Solar cell element and solar cell element manufacturing method |
| JP2014138057A (en) * | 2013-01-16 | 2014-07-28 | Hitachi Metals Ltd | Marking method for nitride semiconductor wafer, and nitride semiconductor wafer with identification code |
| JP2014154661A (en) * | 2013-02-07 | 2014-08-25 | Hitachi Metals Ltd | Nitride semiconductor wafer and nitride semiconductor wafer marking method |
| WO2016006587A1 (en) * | 2014-07-11 | 2016-01-14 | 東レエンジニアリング株式会社 | Marking device |
| US9315317B2 (en) | 2012-02-21 | 2016-04-19 | Ten Media, Llc | Container for eggs |
| CN109148260A (en) * | 2017-06-19 | 2019-01-04 | 胜高股份有限公司 | The imprint method of laser labelling, the silicon wafer with laser labelling and its manufacturing method |
| WO2020084931A1 (en) * | 2018-10-22 | 2020-04-30 | 株式会社Sumco | Method for manufacturing silicon wafer with laser mark, and silicon wafer with laser mark |
-
1982
- 1982-11-08 JP JP19557182A patent/JPS5984515A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19956107B4 (en) * | 1998-11-25 | 2008-01-24 | Komatsu Ltd. | Shape of a micromarking made by a laser beam and method of micromarking |
| FR2809541A1 (en) * | 2000-05-24 | 2001-11-30 | Komatsu Mfg Co Ltd | Micropoint marking shape is formed with laser beam; micropoint marking is formed at each individual wafer illumination point; marker has protrusion from surface of wafer in central section |
| JP2013517000A (en) * | 2010-01-20 | 2013-05-16 | テン メディア，エルエルシー | Systems and methods for processing eggs and other objects |
| US9315317B2 (en) | 2012-02-21 | 2016-04-19 | Ten Media, Llc | Container for eggs |
| JP2013211541A (en) * | 2012-02-28 | 2013-10-10 | Kyocera Corp | Solar cell element and solar cell element manufacturing method |
| JP2014138057A (en) * | 2013-01-16 | 2014-07-28 | Hitachi Metals Ltd | Marking method for nitride semiconductor wafer, and nitride semiconductor wafer with identification code |
| JP2014154661A (en) * | 2013-02-07 | 2014-08-25 | Hitachi Metals Ltd | Nitride semiconductor wafer and nitride semiconductor wafer marking method |
| WO2016006587A1 (en) * | 2014-07-11 | 2016-01-14 | 東レエンジニアリング株式会社 | Marking device |
| JP2016016448A (en) * | 2014-07-11 | 2016-02-01 | 東レエンジニアリング株式会社 | Marking device |
| CN109148260A (en) * | 2017-06-19 | 2019-01-04 | 胜高股份有限公司 | The imprint method of laser labelling, the silicon wafer with laser labelling and its manufacturing method |
| JP2019000888A (en) * | 2017-06-19 | 2019-01-10 | 株式会社Sumco | Printing method of laser mark, manufacturing method of silicon wafer with laser mark, and silicon wafer with laser mark |
| CN109148260B (en) * | 2017-06-19 | 2023-04-25 | 胜高股份有限公司 | Laser marking method, silicon wafer with laser marking and manufacturing method thereof |
| WO2020084931A1 (en) * | 2018-10-22 | 2020-04-30 | 株式会社Sumco | Method for manufacturing silicon wafer with laser mark, and silicon wafer with laser mark |
| JP2020068231A (en) * | 2018-10-22 | 2020-04-30 | 株式会社Sumco | Manufacturing method for silicone wafer with laser mark |
| US11515263B2 (en) | 2018-10-22 | 2022-11-29 | Sumco Corporation | Method of producing laser-marked silicon wafer and laser-marked silicon wafer |
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