JPS5963726A - Device for developing photo resist - Google Patents
Device for developing photo resistInfo
- Publication number
- JPS5963726A JPS5963726A JP17480482A JP17480482A JPS5963726A JP S5963726 A JPS5963726 A JP S5963726A JP 17480482 A JP17480482 A JP 17480482A JP 17480482 A JP17480482 A JP 17480482A JP S5963726 A JPS5963726 A JP S5963726A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- wafer
- developer
- diameter
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明はホトレジスト現像装ｆ１． ｔ＝関する。[Detailed description of the invention] [Technical field of invention] The present invention provides a photoresist developing device f1. t=related.
半導体装置の製造工程１：おいてホトエツチングプロセ
スは直装な位にを占めるが、そのうちホトレジスＦの現
像は例えば第１図に示す如きスプレ一方式の現像装置ｖ
用いて行われる・内申１は半島体ウニ八を吸着（２）定
する回転可能なウェハチャックであり、このウェハチャ
ック１は回転軸２に支持されている・
このウェハチャック１上方には現像液をスプレーするノ
ズル３が支持板４に固定されている。In the manufacturing process 1 of semiconductor devices, the photoetching process occupies a direct mounting position, and the development of the photoresist F is performed using a spray-type developing device v as shown in FIG. 1, for example.
・Information 1 is a rotatable wafer chuck that adsorbs (2) the peninsular sea urchin, and this wafer chuck 1 is supported by a rotating shaft 2.・A developing solution is placed above this wafer chuck 1. A nozzle 3 for spraying is fixed to a support plate 4.
このノズル３からスプレーされる現像液は前記ウェハチ
ャック２によって固定される半導体ウェハの中心部から
ほぼ半径の距離だけカバーできるようになっている・
上述した現ｇ１装置を用いたホトレジストの現像は以下
のように行われる・まず１例えばポジ型ホトレジストの
塗布、ベーク及びステッパーを用いた露光の各工程を経
た半導体ウニへ５をウェハチャツク１上Ｉ’ｍ送し、ウ
ェハチャック１に対するセンタ９ングを行う６次（−、
ウェハチャック１により半導体ウェハ５を真空吸着Ｔる
・つづいて、ノズル８ｗ：４４節して現像液が半導体ウ
ェハ５の所定位に５二所定の角度でスプレーされるよう
にＴる・っづいて、−転軸２を所定回転数で回転させな
がらノズル３から現像液をスプレーしてホトレジストの
現像を行う。っづいて１図示しない別の管からリンス液
な吹きつけてリンスな行った後、昆速回転して乾燥する
Ｏ
上述した従来の現像装紘ヲ用いてホトレジストの視像ン
行うと、現像後ウェハ面内のホトレジストパターンの寸
法に農が生じるという欠点のあることがわかったＤ第２
図にポジ型ホトレジストヲ用いた場合の半導体ウニへの
中心からの距離とホトレジストパターンの寸法との関係
の測定１％ｌ’に示す０第２図かられかるようＣ；ホト
レジストパターンの寸法はウェハの中−じλ部で小さく
１周辺ｇＩＳで大きくなっている０その寸法差は一般に
０．２〜０．４μｍであ１１ 、厳密な回路パターンの
コントロールか要求される集毘回路デバイスでは大きな
間融となる０
また、ホトレジストの現像方法としては第３図Ｃ示す如
く、現像液１ノが満たされた容器１２内（−多数の半導
体ウェハ１３・・・が装填されたウェハキャリア１４を
浸してロット毎に現像を行うディップ方式も知られ℃い
る０
上述したディップ方式はスプレ一方式と異なりウェハ面
内の中心部と周辺部におけるホトレジストパターンの寸
法差は少なくなるが、ウェハ間及びロット間でのホトレ
ジストパターンの寸話のバラツキが大とくなるという欠
点がある・〔発明の目的〕
本発明は上記事情に鑑みてなされたものであ曝）、現像
後におけるウェハ面内の中心部と周辺部間及びウェハ間
のホトレジストパターンの寸法差を少なくシ、正ｈ（二
寸法コントロールされた回路パターンを形成し待るホト
レジスト現像装置を提供することを目的とするものであ
る。The developer sprayed from this nozzle 3 is designed to cover approximately a radial distance from the center of the semiconductor wafer fixed by the wafer chuck 2.The photoresist development using the above-mentioned development g1 apparatus is as follows. It is carried out as follows: 1. First, 5 is transferred onto the wafer chuck 1 to the semiconductor urchin that has gone through each process of applying positive photoresist, baking, and exposure using a stepper, and centering on the wafer chuck 1 is performed. 6th order (-,
The semiconductor wafer 5 is vacuum suctioned by the wafer chuck 1, and then the nozzle 8w is turned so that the developer is sprayed at a predetermined position on the semiconductor wafer 5 at a predetermined angle. , - The photoresist is developed by spraying a developer from the nozzle 3 while rotating the rotating shaft 2 at a predetermined rotation speed. First, spray a rinsing liquid from another tube (not shown) to rinse, and then dry by rotating at high speed. D-2, which was found to have the disadvantage of causing irregularities in the dimensions of the photoresist pattern within the wafer plane.
Measurement of the relationship between the distance from the center to the semiconductor turret and the dimensions of the photoresist pattern when using a positive type photoresist. The dimensional difference is generally 0.2 to 0.4 μm (11), which is small at the center λ and large at the periphery (gIS), and is large in integrated circuit devices that require strict control of circuit patterns. As shown in FIG. 3C, a photoresist developing method involves immersing a wafer carrier 14 loaded with a large number of semiconductor wafers 13 in a container 12 filled with a developer solution. A dip method in which development is performed for each lot is also known.The above-mentioned dip method differs from the spray method in that the dimensional difference in the photoresist pattern between the center and the periphery of the wafer surface is small, but the difference between wafers and lots varies. [Objective of the Invention] The present invention has been made in view of the above circumstances. It is an object of the present invention to provide a photoresist developing apparatus that can form and wait for two-dimensionally controlled circuit patterns by reducing dimensional differences in photoresist patterns between wafers and between wafers.
本発明者はディップ方式よ１」もスプレ一方式の方がウ
ェハ間のホトレジストパターンの寸法差化生なくするこ
とができるのでスプレ一方式を採用し、スプレ一方式Ｃ
：おいてウェハ市内の中心ｇｌｓと周辺部での寸法差を
少な（Ｔる生殺について楠々検討した−
第１図の従来のホトレジスト現像装置を用いた場合、ウ
ェハ面内の中心部と周辺部とでホトレジストパターンの
寸法差が生じる要因として以下のようなことが考えられ
る・丁なわち、単位時間に現像液に接触するＷＪ合が中
心部と周辺部とで異なり、中心部の方が多いため現像速
度が大きくなる・特Ｃ、ウェハＣ：対するノズルの位置
及び角度によって、現像液のスプレーされる範囲がウェ
ハの半径以上Ｃ；なるとこの傾向が大きくなる口また。The present inventor has adopted the dip method 1 as well as the spray method because it can eliminate dimensional differences in photoresist patterns between wafers.
: When using the conventional photoresist developing apparatus shown in Fig. 1, the dimensional difference between the center of the wafer and the periphery is small (T). Possible reasons for the dimensional difference in the photoresist pattern between the peripheral part and the peripheral part are as follows.・Special C, wafer C: Depending on the position and angle of the nozzle with respect to the nozzle, the area where the developer is sprayed is greater than or equal to the radius of the wafer C: This tendency increases.
現像液の液温を室温よ１］上げた場合に中心部と周辺部
の接触する割合が異なることから温度差が伍し、更Ｃ：
現像速度の差が増加することも確認されている口例えは
、４０℃（：おいてホトレジス［パターンの寸法差が約
０．４μｍであったのに対し、温度な３０℃近く下げる
と従来の方式１：おいても寸法差を約０．２μｍＣ減少
させることができるｎそこで１本発明者は更に検討した
結果、ノズルからスプレーされる現像液が少なくともウ
ェハの直径をカバーするよう（二するとともにノズル１
に現像液かスプレーされる直径方向６；対し℃直交方向
−：往復移動させれば、上述した要因を取り除くことが
できることを見出した。When the temperature of the developer is raised from room temperature by 1], the contact ratio between the center and the periphery is different, so the temperature difference increases, and C:
An analogy that has been confirmed to increase the difference in development speed is that at 40°C, the pattern dimension difference was about 0.4 μm, whereas when the temperature was lowered by about 30°C, it was Method 1: The dimensional difference can be reduced by approximately 0.2 μmC even when Nozzle 1
It has been found that the above-mentioned factors can be eliminated by reciprocating the developer in the diametrical direction 6 in which the developer is sprayed;
すなわち１本発明のホトレジスト現像装置は。That is, the photoresist developing apparatus of the present invention is as follows.
半導体ウェハを固定する回転可能なウェハチャックと、
該クエハテヤック上方に配設され、半導体ウェハの少な
くとも直径Ｉ：亘って現像液門スプレーするノズルな現
像液がスプレーされる直径方向に対して直交、方向に往
復移動させる〕 □ズル駆動部とを具備したことを特
徴とするものである一
本発明においてウェハチャックの回転数・ノズルの移動
速度及び現像液の流量は適宜設電できる◎
〔発明の実施例〕
以下１本発明の実施例を第４図を参照して説明Ｔる。A rotatable wafer chuck that fixes a semiconductor wafer;
A nozzle which is disposed above the semiconductor wafer and sprays the developer solution across at least the diameter I of the semiconductor wafer and reciprocates in a direction perpendicular to the diameter direction in which the developer is sprayed. In the present invention, the rotational speed of the wafer chuck, the moving speed of the nozzle, and the flow rate of the developer can be set as appropriate. This will be explained with reference to the drawings.
図中２１は半、導体ウニへＹ吸着固定する回転可能なウ
ェハチャックであり、このウェハチャック２１は回転軸
２２（二支持されている・前記ウェハチャック２１の上
方には約１０ ｃｍ隔テテノズル２３が配設されている
口なお、このノズル２３は前記ウェハチャック２１１；
吸着１？ｉ＋定される半導体ウェハの少なくとも直径に
亘ってほぼ楕円形の領域に現像液をスプレーし得るよう
になっている−また。前ら己ノズル２３はノズル駆動部
に取付けられ、該ノズル駆動部にょを】前記ウェハチャ
ック２１ｆ横切るように往復移動できるようになってい
るｇ１的記ノズル駆動部はシャツ＃ ２４ ａ ＊ ２
４ ｂ間に張設され、現像液かスプレーされる直径方向
（一対して直交方向に配置された一対のノズル移動用ベ
ルト２５ｍ＊２５ｂを備え℃いる・このベルト２５ ａ
、 ２５ｂ間には前記ノズル２３がその側部から水平
方向に突出した支持棒２６．２６１に介して固定されて
いる。前記−万のシャツ）２４ｍは駆動用ベル）２７を
介して可変モータ２８に連結されている◎また。＠ｉｎ
、一方のノズル移動用ベルト２５ｍのが１紀ノズル２３
が支持棒２６．２６を介してｆ！！ｊＪ定されている左
右両側にはストッパｓｔ ｓ ａ ６ ｚ ９ ｂか配
設されているｒｈ更Ｃ、ノズル２３が往復移動して、半
導体ウニへの周辺部のみにＢＡ 細波をス゛プレーする
ようになっ７１に前記ストッパ２９ｍ、２９ｂによって
光がさえぎられるように光センサ３０ａｍ３０ｂが配設
されておｔ）−、これら光センサ３０’ａ、３０ｂは前
記可変モータ２８と接続されている＠上記ホトレジスト
境像装置の作用を説明Ｔる。In the figure, reference numeral 21 denotes a rotatable wafer chuck that is fixed by Y-axis suction to a conductor, and this wafer chuck 21 is supported by a rotating shaft 22. Note that this nozzle 23 is provided with the wafer chuck 211;
Adsorption 1? It is provided that the developer solution can be sprayed over at least the diameter of the semiconductor wafer in an approximately elliptical area defined by i+. The nozzle 23 from the front is attached to a nozzle drive section, and the nozzle drive section can be reciprocated across the wafer chuck 21f.
A pair of nozzle moving belts 25 m * 25 b are provided, which are stretched between 4 b and are arranged in the diametrical direction (orthogonal to the pair) where the developer is sprayed.
, 25b, the nozzle 23 is fixed via support rods 26, 261 that project horizontally from the sides thereof. The above-mentioned -10,000 shirt) 24m is connected to the variable motor 28 via the driving bell) 27. @in
, one nozzle moving belt of 25 m is the first nozzle 23.
f! via the support rod 26.26. ! A stopper is installed on the left and right sides of the nozzle 23, and the nozzle 23 moves back and forth so that BA fine waves are sprayed only on the periphery of the semiconductor sea urchin. At 71, optical sensors 30am and 30b are arranged so that the light is blocked by the stoppers 29m and 29b. Explain the operation of the imager.
まず１例えばポジ型ホトレジストの塗布、べ−り及びス
テッパーを用いた露光を経た直径５インチの半導体ウェ
ハ３１にウェハチャック２１により真空吸着丁°る・次
に、ウェハチャック２１を例えば５０ ｒｐｍの回転数
で回転させながら、ノズル２３から現像液な半導体ウェ
ハ３１の直径をカバー下るようにスプレーするとともＣ
；可変モータ２８を作動させる。可変モータ２８を作動
させると、ノズル２３は現像液がスプレーされる直径方
向Ｃ二対し℃直交万四Ｃ二例えハ図中ノ左方向に移動す
る・ノズル２３が左方向ｉ；移動して半導体ウェハ３１
の周辺部のみに現像液をスプレーするようになると、ス
トッパ２９ｍが光センサ３０ｔａの光をさえぎり、これ
によって光センナ３０ｍは可変モータ２８の回転方向を
切り換え、ノズル２３は右方向に移動し始める◎っづい
て、ノズル２３は右方向に移動をつづけ、半導体ウェハ
３１の周辺部のみに現像液をスプレーＴるようになると
ストッパ２９ｂが光センサ３０ｂの光をさえぎＩ）、こ
れ（：よつ℃光センサ３０ｂは可変モータ２８の回転方
向を切ｉＪ換え、ノズル２３は左方向に移動し始める◎
このようにして、ノズル２３は現像液のスプレーされる
直径方向Ｃ二対して直交方向に往復運動する・なお、５
インチ径の半導体ウェハ３１の現像に要する現像液の流
量は約１５０ ｃｃ／１ｎｉｎ であった・また、ノ
ズル２３の杼動速阜は２０ ｃｆｌｙｗｔ、程度まで可
駁とした◎しかして、上述したホトレジストパターンｇ
：よれは、半導体ウェハ３１面内のどの位置（−おいて
も現像液がほぼ均等に接触するのテ、第５図Ｃ：示す如
く税像後のホトレジストパターンの寸法は半導体ウェハ
３１面内のどの位置においてもほぼ一定となる・また、
ウェハ間においてもホトレジストパターンの寸法差は小
さかった・なお、上記実施例では１転軸２２ ｖｓ Ｏ
ｒｐｍの回転数が回転させたが１回転軸２２を全く回転
させない場合、半導体ウェハ３１面内の位置に依存しな
いホトレジストパターンの寸法差が生じるため、ウェハ
の低速回転は必要である・また１本発明Ｃ二おいて由い
られるノズルは第４図Ｉ：示す形状のものに限らず１例
えは第６図に示す如く、所望個数（第６図では３個）の
開孔を有Ｔる筒状のノズル３２でもよい、ｈなお。First, a semiconductor wafer 31 with a diameter of 5 inches, which has been coated with, for example, positive photoresist, and exposed using a stepper, is vacuum suctioned by the wafer chuck 21.Then, the wafer chuck 21 is rotated at, for example, 50 rpm. While rotating several times, the developer is sprayed downward from the nozzle 23 to cover the diameter of the semiconductor wafer 31.
;The variable motor 28 is operated. When the variable motor 28 is operated, the nozzle 23 moves to the left in the figure, perpendicular to the diameter direction C2 in which the developer is sprayed. wafer 31
When the developer starts to be sprayed only around the periphery of the ◎ Then, the nozzle 23 continues to move to the right, and when the developer is sprayed only on the periphery of the semiconductor wafer 31, the stopper 29b blocks the light from the optical sensor 30b. The optical sensor 30b switches the rotation direction of the variable motor 28, and the nozzle 23 begins to move to the left◎
In this way, the nozzle 23 reciprocates in a direction perpendicular to the diametrical direction C2 in which the developer is sprayed.
The flow rate of the developer required for developing the inch diameter semiconductor wafer 31 was approximately 150 cc/1 nin. Also, the shuttle speed of the nozzle 23 was variable to about 20 cflywt. pattern g
: The waviness is caused by the fact that the developing solution contacts almost evenly at any position within the surface of the semiconductor wafer 31.As shown in FIG. It is almost constant at any position・Also,
The dimensional difference in the photoresist pattern between wafers was also small. In the above example, one rotation axis 22 vs.
If the rotational speed of the rpm is increased but the rotation axis 22 is not rotated at all, there will be a dimensional difference in the photoresist pattern that does not depend on the position within the plane of the semiconductor wafer 31, so it is necessary to rotate the wafer at a low speed. The nozzle used in Invention C2 is not limited to the shape shown in FIG. 4 I. For example, as shown in FIG. It should be noted that the nozzle 32 may also have a shape.
ｓ６図において、ストッパ２９８．２９ｂ及び光センナ
３０ｍ 、３０ｂは省略し℃いる。In figure s6, the stopper 298, 29b and optical sensor 30m, 30b are omitted.
以上詳述した如く１本発明によれは現像後におけるウェ
ハ面内及びウェハ間でほば一定の寸法を有するホトレジ
ストパターンを形成し、正確（二寸法コントロールされ
た回路パターンを形成し得るホトレジスト現像装に、ｙ
ｐｔ提供できるものである。As described above in detail, one aspect of the present invention is a photoresist developing apparatus which forms a photoresist pattern having approximately constant dimensions within the wafer surface and between wafers after development, and which can form an accurate (two-dimensionally controlled) circuit pattern. ni, y
pt can be provided.
第１図は従来のスプレ一方式のホトレジスト現像装置を
示す斜視図、第２図は同装置を用い℃現像を行った場合
のウェハの中心からの距離とホトレジストパターンの寸
法との関係を示す図、第３図は従来のディップ方式Ｃ二
よるホトレジストの現像方法を示す斜視図、第４図は本
発明の実施例におけるホトレジスト現像装置を示す斜視
図、第５図は固装ｋｙｔ用いて現像を行った場合のウェ
ハの中心からの距離とホトレジストパターンとの関係を
示す図、第６図は本発明の他の実施例（二おけるホトレ
ジスト現像装隨ヲ示す斜視図である◎
２１・・・ウェハチャック、２２・・・回転軸、２３・
・・ノズル、２４ｍ、２４ｂ・・・シャフト、２５ｔａ
Ｉ２５ｂ・・・ノズル駆動用ベルト、２６・・・支持棒
。
２７・・・駆動用ベルト、２８・・・可変モータ、 ２
９ａａ２９ｂ・・・ストッパ、３０ｍ、３０ｂ・・・光
センサ。
３１・・・半導体ウェハ、３２・・・ノズル◎出願人代
理人 弁理士 鈴 江 武 彦第１図
第２図
１３６
第３図
１ム
第４図Fig. 1 is a perspective view of a conventional spray-type photoresist developing device, and Fig. 2 is a diagram showing the relationship between the distance from the center of the wafer and the dimensions of the photoresist pattern when the same device is used for C development. , FIG. 3 is a perspective view showing a photoresist developing method using the conventional dip method C2, FIG. 4 is a perspective view showing a photoresist developing apparatus in an embodiment of the present invention, and FIG. 21... wafer Chuck, 22... Rotating shaft, 23...
...Nozzle, 24m, 24b...Shaft, 25ta
I25b... Nozzle drive belt, 26... Support rod. 27... Drive belt, 28... Variable motor, 2
9aa29b...stopper, 30m, 30b...light sensor. 31... Semiconductor wafer, 32... Nozzle ◎ Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 136 Figure 3 1m Figure 4
Claims (1)
、該ウェハチャック上方シ；配設され。 半導体クエへの少なくとも直径ｇ二亘って現像液をスプ
レーするノズルと、該ノズルを現像液がスプレーされる
直径方向に対して直交方向（：往復移動させるノズル躯
動部とを具備したことを特徴とするホトレジスト現像装
置。[Scope of Claims] A rotatable wafer chuck fixed to a semiconductor substrate; and a rotatable wafer chuck disposed above the wafer chuck. It is characterized by comprising a nozzle that sprays a developer solution over at least a diameter g of the semiconductor device, and a nozzle sliding part that moves the nozzle back and forth in a direction perpendicular to the diameter direction in which the developer is sprayed. A photoresist developing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17480482A JPS5963726A (en) | 1982-10-05 | 1982-10-05 | Device for developing photo resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17480482A JPS5963726A (en) | 1982-10-05 | 1982-10-05 | Device for developing photo resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5963726A true JPS5963726A (en) | 1984-04-11 |
Family
ID=15984949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17480482A Pending JPS5963726A (en) | 1982-10-05 | 1982-10-05 | Device for developing photo resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5963726A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5978343A (en) * | 1982-10-28 | 1984-05-07 | Fujitsu Ltd | Resist film developing method |
| JPS60179957A (en) * | 1984-02-27 | 1985-09-13 | Hitachi Ltd | Spin developing device |
| JPS6165435A (en) * | 1984-09-07 | 1986-04-04 | Dainippon Screen Mfg Co Ltd | Method of substrate surface treatment and device therefor |
| JPS61112320A (en) * | 1984-11-07 | 1986-05-30 | Nec Corp | Developing treating device for semiconductor substrate |
| JPS6230336U (en) * | 1985-08-07 | 1987-02-24 | ||
| JPH01181525A (en) * | 1988-01-11 | 1989-07-19 | Toppan Printing Co Ltd | Spray device |
| JPH0345631U (en) * | 1989-09-13 | 1991-04-26 | ||
| US7586581B2 (en) | 2004-07-02 | 2009-09-08 | Sharp Kabushiki Kaisha | Developing method of photoresist and developing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54102123A (en) * | 1978-01-27 | 1979-08-11 | Matsushita Electric Ind Co Ltd | Developing method |
| JPS56110933A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Developing method |
-
1982
- 1982-10-05 JP JP17480482A patent/JPS5963726A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54102123A (en) * | 1978-01-27 | 1979-08-11 | Matsushita Electric Ind Co Ltd | Developing method |
| JPS56110933A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Developing method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5978343A (en) * | 1982-10-28 | 1984-05-07 | Fujitsu Ltd | Resist film developing method |
| JPS60179957A (en) * | 1984-02-27 | 1985-09-13 | Hitachi Ltd | Spin developing device |
| JPS6165435A (en) * | 1984-09-07 | 1986-04-04 | Dainippon Screen Mfg Co Ltd | Method of substrate surface treatment and device therefor |
| JPS61112320A (en) * | 1984-11-07 | 1986-05-30 | Nec Corp | Developing treating device for semiconductor substrate |
| JPS6230336U (en) * | 1985-08-07 | 1987-02-24 | ||
| JPH01181525A (en) * | 1988-01-11 | 1989-07-19 | Toppan Printing Co Ltd | Spray device |
| JPH0345631U (en) * | 1989-09-13 | 1991-04-26 | ||
| US7586581B2 (en) | 2004-07-02 | 2009-09-08 | Sharp Kabushiki Kaisha | Developing method of photoresist and developing device |
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