JPS5953010U - X線断層撮影装置 - Google Patents

X線断層撮影装置

Info

Publication number
JPS5953010U
JPS5953010U JP1983116324U JP11632483U JPS5953010U JP S5953010 U JPS5953010 U JP S5953010U JP 1983116324 U JP1983116324 U JP 1983116324U JP 11632483 U JP11632483 U JP 11632483U JP S5953010 U JPS5953010 U JP S5953010U
Authority
JP
Japan
Prior art keywords
ray
ray tube
cross
tube
tomography device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983116324U
Other languages
English (en)
Inventor
グンタ−・ル−デラ−
ブルクハルト・ワインカウフ
ライナ−・リ−ベトル−ト
Original Assignee
シ−メンス・アクチエンゲゼルシヤフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シ−メンス・アクチエンゲゼルシヤフト filed Critical シ−メンス・アクチエンゲゼルシヤフト
Publication of JPS5953010U publication Critical patent/JPS5953010U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914Measurement of spatial distribution of radiation
    • G01T1/2921Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Light Receiving Elements (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第1図は公知の半導体X線検出素子、第2図は多数の半
導体検出素子で構成されるX線検出器の一例を示し、第
3図はこの考案によるX線断層撮影装置の構成を示す。 第3図において31はX線管、32は半導体X線検出器
、34は電源、35は変換装置、36は視覚表示装置で
ある。

Claims (1)

    【実用新案登録請求の範囲】
  1. 互に固定結合されたX線管31とこのY線管の焦点の回
    りに湾曲した半導体検出器32を備え、X線管は被写体
    30の長軸33の方向の拡がりが所望の断層の厚さに等
    しく被写体の断面全体を同時に透射する扇形のX線束を
    放射し、断層像を作るため測定装置31.32が被写体
    の回りを回転する装置において、半導体検出器32が一
    つの半導体素子列16〜20から成り、隣り合せた二つ
    の素子(16と17.17と18等)の間にはそれぞれ
    一つのX線発光層(21,22等)が設けられ、半導体
    素子列16〜20はX線管の焦点を取巻いて湾曲してい
    ることを特徴とする人体の横断層像形成用のX線断層撮
    影装置。
JP1983116324U 1976-05-20 1983-07-26 X線断層撮影装置 Pending JPS5953010U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE26226551 1976-05-20
DE19762622655 DE2622655A1 (de) 1976-05-20 1976-05-20 Halbleiter-roentgenstrahlendetektor

Publications (1)

Publication Number Publication Date
JPS5953010U true JPS5953010U (ja) 1984-04-07

Family

ID=5978578

Family Applications (2)

Application Number Title Priority Date Filing Date
JP15563276A Pending JPS52142573A (en) 1976-05-20 1976-12-23 Semiiconductor xxray detector
JP1983116324U Pending JPS5953010U (ja) 1976-05-20 1983-07-26 X線断層撮影装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP15563276A Pending JPS52142573A (en) 1976-05-20 1976-12-23 Semiiconductor xxray detector

Country Status (5)

Country Link
US (1) US4250385A (ja)
JP (2) JPS52142573A (ja)
DE (1) DE2622655A1 (ja)
FR (1) FR2352311A1 (ja)
GB (1) GB1554686A (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105182A (en) * 1977-02-24 1978-09-13 Toshiba Corp Semiconductor radiant-ray detector
US4303860A (en) * 1979-07-30 1981-12-01 American Science And Engineering, Inc. High resolution radiation detector
DE2946108C2 (de) * 1979-11-15 1985-02-14 Koch & Sterzel Gmbh & Co, 4300 Essen Strahlendetektor
DE3003295A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Strahlendiagnostikgeraet
US4365341A (en) * 1980-06-09 1982-12-21 The Johns Hopkins University On-line treatment monitoring for radiation teletherapy
DE3104030A1 (de) * 1981-02-05 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Roentgen- und/oder korpuskularstrahlungs-halbleiterdetektor in integrierter bauweise
US4531058A (en) * 1982-01-28 1985-07-23 The Massachusetts General Hospital Positron source position sensing detector and electronics
JPS58133237A (ja) * 1982-02-01 1983-08-08 株式会社東芝 診断用x線ct装置
JPS58168980A (ja) * 1982-03-31 1983-10-05 Toshiba Corp 放射線検出器
JPS6049281A (ja) * 1983-08-29 1985-03-18 Shimadzu Corp 放射線計測素子
US4618380A (en) * 1985-06-18 1986-10-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an imaging X-ray spectrometer
US5099128A (en) * 1989-03-17 1992-03-24 Roger Stettner High resolution position sensitive detector
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
DE4025427A1 (de) * 1990-08-10 1992-02-13 Siemens Ag Detektoranordnung zum nachweis von roentgenstrahlung und verfahren zu deren herstellung
FR2763700B1 (fr) * 1997-05-23 1999-07-30 Thomson Tubes Electroniques Dispositif de mesure d'exposition d'un detecteur d'image a l'etat solide soumis a un rayonnement ionisant et detecteur d'image equipe d'un tel dispositif de mesure
DE10330595A1 (de) * 2003-07-07 2005-02-17 Siemens Ag Röntgendetektor und Verfahren zur Herstellung von Röntgenbildern mit spektraler Auflösung
JP2006179980A (ja) * 2004-12-20 2006-07-06 Hamamatsu Photonics Kk 撮像装置および撮像システム
DE102005029270B4 (de) * 2005-06-23 2009-07-30 Siemens Ag Katheter, Kathetereinrichtung und bildgebende Diagnosevorrichtung
JP2007170908A (ja) * 2005-12-20 2007-07-05 Shimadzu Corp 放射線検出器およびそれを用いた撮像装置
US7371030B2 (en) * 2006-09-13 2008-05-13 Hickman Burleigh D Flexible road surfaces
DE102011080892B3 (de) * 2011-08-12 2013-02-14 Siemens Aktiengesellschaft Röntgenstrahlungsdetektor zur Verwendung in einem CT-System

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2190200A (en) * 1936-11-24 1940-02-13 John A Victoreen X-ray measuring instrument
US3612869A (en) * 1970-02-27 1971-10-12 Atomic Energy Commission Large volume planar pair germanium (lithium) detector
JPS5221384B2 (ja) * 1971-09-30 1977-06-10
FR2225733B1 (ja) * 1973-04-12 1976-05-21 Telecommunications Sa
GB1468810A (en) * 1973-05-05 1977-03-30 Emi Ltd Radiography
FR2249517B1 (ja) * 1973-10-30 1976-10-01 Thomson Csf
DE2514409A1 (de) * 1975-04-02 1976-10-14 Siemens Ag Anordnung zur durchfuehrung eines verfahrens zum herstellen eines koerperschnittbildes

Also Published As

Publication number Publication date
US4250385A (en) 1981-02-10
FR2352311B1 (ja) 1980-01-11
GB1554686A (en) 1979-10-24
DE2622655A1 (de) 1977-12-01
FR2352311A1 (fr) 1977-12-16
JPS52142573A (en) 1977-11-28

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