JPS594062A - Electronic part case and fabrication thereof - Google Patents
Electronic part case and fabrication thereofInfo
- Publication number
- JPS594062A JPS594062A JP11167482A JP11167482A JPS594062A JP S594062 A JPS594062 A JP S594062A JP 11167482 A JP11167482 A JP 11167482A JP 11167482 A JP11167482 A JP 11167482A JP S594062 A JPS594062 A JP S594062A
- Authority
- JP
- Japan
- Prior art keywords
- electroless plating
- thickness
- gold
- nickel layer
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は電子部品外囲器及びその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electronic component envelope and a manufacturing method thereof.
一般にＩＣ（半導体集積回路）単体、複数のＩＣに使用
する外囲器、 Ｌ Ｓ Ｉ外囲器などの半導体用の外囲
器１表面波素子の外囲器などの電子部品外囲器を製造す
る場合、セラミックスシートｌＳどの絶縁基板上にタン
グステンやモリブデンおよびその合金の金属粉末をペー
スト状とし印刷技術を利用して一部に塗布し、絶縁基板
と共にこれらを加熱することにより焼結してなるメタラ
イズ層を導体部とし、この導体部上にメッキにより金層
を被着形成して配線や金属ふた部との接続に使用する方
法が知られている。この場合金属の被着形成方法として
は電気メツキ方法と、無電解メッキ方法があり、このう
ち電気メツキ方法は配線部の導体部が個々に独立してい
るため、これらを相互に接続して一つのメッキ用電極を
取出す必要があり、極めて複雑となる。したがって一般
にはメタライズ層の表面にろう付性をよくするためにニ
ッケルメッキを施しておき、連続的にリードを形成して
なるリードフレームを銀ろう付した状態でこれをメンキ
電極として使用し、全面に金メッキを施す方法がとられ
ている。In general, we manufacture electronic component enclosures such as enclosures for single ICs (semiconductor integrated circuits), enclosures for multiple ICs, enclosures for semiconductors such as LSI enclosures, and enclosures for surface wave devices. In this case, metal powders of tungsten, molybdenum, and their alloys are made into a paste on an insulating substrate such as a ceramic sheet, and applied to a part using printing technology, and then sintered by heating them together with the insulating substrate. A method is known in which a metallized layer is used as a conductor, and a gold layer is deposited on the conductor by plating to be used for connection with wiring or a metal lid. In this case, there are two methods for forming metal deposits: electroplating and electroless plating. Among these, electroplating involves connecting the conductor parts of the wiring part individually to form a single unit. It is necessary to take out two plating electrodes, making it extremely complicated. Therefore, in general, the surface of the metallized layer is plated with nickel to improve brazing properties, and a lead frame made up of continuous leads is soldered with silver and used as a brazing electrode. A method of gold plating is used.
しかるに、この方法では金が多量に使用されるため電子
部品外囲器が１１価となる問題点がある。However, this method has a problem in that the electronic component envelope becomes 11-valent because a large amount of gold is used.
この問題点を改善するために戴メ゛ツキの工程で不用部
分をマスキングテープなとでマスクし、部分メンキする
方法も考えられるが、この方法にも槌々工程上煩雑な問
題点が残る。このようじ（−気メツキ方法は不便なため
、メッキ竜極を必要としない無電解（化学）めっき方法
で金層を形成すること要望されている。In order to improve this problem, a method can be considered in which the unnecessary parts are masked with masking tape or the like in the plating process and then partially peeled, but this method also has the problem of complicated hammering process. Since this toothpick method is inconvenient, it is desired to form a gold layer by an electroless (chemical) plating method that does not require plating.
この金の無電解めっき方法としてはｔ時開昭５５−１６
０４９６ 号公報に示されている方法が知られている０
この方法を簡単に説明すると、セラミック基板表面の一
部にタングステン粉末またはモリブデン粉末もしくはタ
ングステンまたはモリブデンを主成分とする金属粉末を
焼付けてなる導体部が設けられ、この導体部の表聞にニ
ッケル膜を介する力）、直接に金メッキ膜が設けられ、
前記金メッキｊ摸上の一部に電属リードが銀ロウを介し
て取付けてなり、この金メッキは電気メッキか無′銃屏
メッキで行ない加熱処理を施すようになされている。This electroless gold plating method was first developed in 1983.
A method disclosed in Publication No. 0496 is known. To briefly explain this method, tungsten powder, molybdenum powder, or metal powder mainly composed of tungsten or molybdenum is baked on a part of the surface of a ceramic substrate. A conductor part is provided, and a gold plating film is provided directly on the surface of this conductor part (force via a nickel film),
An electric lead is attached to a part of the gold plated sample via silver solder, and the gold plating is performed by electroplating or gunless plating, and then subjected to heat treatment.
しかし、この技術においては無醒解金メッキ層の厚さを
１〜２μとしなければならない、また前記導体部がポー
ラスであるためさらに厚くメッキする必要が多いので、
この厚さの再現性、厚付性に欠けるし、また、無１！、
解金メツキを無電解ニッケルメッキを介して行ない、銀
ろう付する場合、高温のため金がニッケル中に拡散して
しまうのでやはり金メッキ層の厚さを厚くしなければな
らない。このため金の使用量節約にも限界があり、外囲
器として高価なものになるし、更に製造も困難であり品
質の安定化がはかれないという問題点がある。However, in this technique, the thickness of the unrefined gold plating layer must be 1 to 2 μm, and since the conductor portion is porous, it is often necessary to plate it even thicker.
This thickness lacks reproducibility and thickness, and is also unmatched! ,
When plating is performed via electroless nickel plating and silver soldering is performed, the gold will diffuse into the nickel due to the high temperature, so the thickness of the gold plating layer must be increased. For this reason, there is a limit to how much gold can be saved, the envelope becomes expensive, and furthermore, it is difficult to manufacture and the quality cannot be stabilized.
不発１す１は前述した諸問題点に鑑みなされたものであ
り、金使用蚕を削減でき、また複雑なパターンでもメッ
キでき、更に製造が容易で品質を安定化させることが可
能な電子部品外囲器及びその製造方法を提供することを
目的としている。The misfire 1-1 was developed in view of the problems mentioned above, and it is a non-electronic component that can reduce the use of gold, can be plated with complex patterns, and is easy to manufacture and has stable quality. The purpose of the present invention is to provide a container and a method for manufacturing the same.
即ち、本発明は絶縁基板の−１．ｂにタングステン粉末
またはモリブデン粉末もしくはタングステンまたはモリ
ブデンを主成分と４−る金属粉末を焼結してなる導体部
と、この導体部に無−臂メツキにより被着形成された硼
素をａむニッケル層と、硼素を含むニッケル層より低い
温度で再結晶比した金メッキ層とからなり再結晶比され
た金メツキ層上の一部に電子部品や電子部品からのリー
ド；腺を取付は得るようにしたことを特徴とし、硼素を
含むニッケル層がリンの含有率が１％以下で４ｉｉ ａ
を０．２５〜ｌＩ％含む再結晶後の厚さ２〜５μ厚とし
、金めつき層としては無電解メッキにより０．１〜０．
５μ厚とした′電子部品外囲器とその製造方法である。That is, the present invention provides -1. (b) a conductor portion formed by sintering tungsten powder, molybdenum powder, or metal powder containing tungsten or molybdenum as a main component; and a nickel layer containing boron formed on this conductor portion by non-arm plating. and a gold plating layer that is recrystallized at a lower temperature than the boron-containing nickel layer. Leads from electronic components or electronic components are attached to a part of the recrystallized gold plating layer. It is characterized by that the boron-containing nickel layer has a phosphorus content of 1% or less and is 4ii a
The thickness after recrystallization is 2-5 μm containing 0.25-1I%, and the gold plating layer is 0.1-0.1 μm thick by electroless plating.
This is an electronic component envelope with a thickness of 5 μm and a manufacturing method thereof.
次に本発明の一芙施例を第１図乃至第３図により説明す
る。Next, one embodiment of the present invention will be explained with reference to FIGS. 1 to 3.
先ず、第１図に示すように未焼結のアルミｆ基板（１）
を用意し、このアルミナ基板（１）の一部にタンゲステ
ン粉末またはモリブデン粉末もしくはタングステンまた
はモリブデンを主成分とするペーストでスクリーン印刷
後、１５００’Ｏで焼結して厚さ約加μの導体部（２）
を形成し、ｓｏ ％塩酸、５９／ｌフッ化カリ水溶液を
用いて、常温で５分浸せき後、水洗する。First, as shown in Figure 1, an unsintered aluminum f-substrate (1) is prepared.
After screen printing a part of this alumina substrate (1) with tungsten powder, molybdenum powder, or a paste mainly composed of tungsten or molybdenum, it is sintered at 1500'O to form a conductor part with a thickness of about 100 μm. (2)
was formed and immersed in SO% hydrochloric acid and a 59/l potassium fluoride aqueous solution for 5 minutes at room temperature, and then washed with water.
次に全置換処理または鉛置換処理を行なう。この全置換
処理としてはシアン金カリウムｌｆ／ｌ。Next, total replacement treatment or lead replacement treatment is performed. This total replacement treatment includes cyanogen-gold potassium lf/l.
クエン酸ソーダ３０ｆｌ／ｌ、水酸化ナトリウム３１Ｊ
ｆ／１の水溶液で９５°０．５分間浸せきする。ま吹パ
ラジウム等の活性金属の置換処理としては例えばカニゼ
ン社製の活性液ＮＯ２またはＮＯ３を６０°Ｃで使用す
る。Sodium citrate 30 fl/l, sodium hydroxide 31 J
Immerse in f/1 aqueous solution at 95° for 0.5 minutes. For the substitution treatment of active metals such as Mabuki palladium, for example, active liquid NO2 or NO3 manufactured by Kanigen Co., Ltd. is used at 60°C.
次に水洗、湯洗を行ない、導体部（２）の表面を活性化
する。Next, the surface of the conductor portion (2) is activated by washing with water and hot water.
次に第２図に示すように活性化された導体部（２）に例
えばカニゼン社製の高純度ニッケルメッキ液８Ｂ−５５
（商品名）、上村工業株式会社製のＤＥＬニッケル（商
品名）、シブレイ社製のニボジツ） ４６８ （商品名
）などの硼素を含むニッケルメッキ液を使用し、６５〜
７０°Ｃ１約加〜（資）分で無電解の硼素を含むニッケ
ルメッキ層（３）を約３μ析出させる。尚、再結晶化後
のニッケルメッキ層は２〜３μの厚さより３〜５μの方
がボンディングしゃすい下地になる。Next, as shown in Figure 2, the activated conductor part (2) is coated with high purity nickel plating solution 8B-5 made by Kanigen Co., Ltd., for example.
(product name), DEL Nickel (product name) manufactured by Uemura Kogyo Co., Ltd., Nibojitsu (product name) manufactured by Sibley Co., Ltd.) using a nickel plating solution containing boron such as 468 (product name), 65 ~
An electroless nickel plating layer (3) containing boron is deposited to a thickness of about 3 μm at 70° C. for about 1 minute. It should be noted that the thickness of the nickel plating layer after recrystallization is 3 to 5 μm, which makes it easier for bonding than the thickness of 2 to 3 μm.
次に水洗、乾燥を行ない、更に水素中で６５０〜９００
℃、３００ 間加熱して硼素を含むニッケルメッキ層（
３）を再結晶化し、５０％塩酸、！５０ｙ／ｌフッ化カ
リ水溶液に常温で５分浸せき後水洗する。Next, it is washed with water, dried, and further heated to 650 to 900 in hydrogen.
The nickel plating layer containing boron (
3) Recrystallize with 50% hydrochloric acid,! Immerse in 50y/l potassium fluoride aqueous solution for 5 minutes at room temperature and then wash with water.
次に第３図に示すようにシアン金カリウム２２／ｌ、塩
化アンモン７５１／ｌ、シュウ酸ナトリウム５０１／ｌ
、次亜リン酸ナトリウム１０ｆ／／の水溶液で９５°
０、加〜Ｉ分間メッキするか、シアン金カリウム２１／
ｌ、シャン化カリ５ｔ／ｌ、 水酸化カリウム１０＞
／／の水溶液で９０°０約６０分間の無電解金メッキを
行ない、金メッキ層（４）を約０．５μ析出さぜる。、
次に水洗、乾燥、を行なったのち２００〜３００″０で
約加分間加熱し、金の再結晶化を行ない電子部品外囲器
を完成する。このよう忙して金メツキノ−（４）が形成
される。Next, as shown in Figure 3, potassium cyanogen gold 22/l, ammonium chloride 751/l, sodium oxalate 501/l
, 95° with an aqueous solution of sodium hypophosphite 10f//
Plating for 0 to 1 minutes or cyanogen gold potassium 21/
l, potassium syanide 5t/l, potassium hydroxide 10>
Electroless gold plating is performed at 90° for about 60 minutes with an aqueous solution of // to deposit a gold plating layer (4) of about 0.5 μm. ,
Next, after washing with water and drying, the electronic component envelope is completed by heating at 200 to 300 mm for about an additional time to recrystallize the gold. be done.
前記ニッケルメッキ層（３）で導体部（２）のポーラス
な表面に緻密で軟らかく厚い下地を形成しているので金
メッキ層（４）の厚さは０．１μ〜０．５μでも金属結
合しやすく電子部品との間を接続するボンディング線の
超音波ボンディングが可能である、尚、ニッケル及び金
メッキ層は再結晶化により軟化し、付着力を高められて
おり、また、硼素を含むニッケルメッキＪ＃ （３）中
の硼素の含有率は０．２５〜１．０％である。Since the nickel plating layer (3) forms a dense, soft and thick base on the porous surface of the conductor portion (2), metal bonding is easy even when the gold plating layer (4) has a thickness of 0.1μ to 0.5μ. Ultrasonic bonding of bonding wires connecting electronic components is possible.The nickel and gold plating layers are softened by recrystallization and have increased adhesion, and the nickel plating containing boron J# The boron content in (3) is 0.25 to 1.0%.
次に、このようにして形成された電子部品外囲器の一例
を第５図により説明する。Next, an example of the electronic component envelope formed in this manner will be explained with reference to FIG.
即ちアルミナ基板けり上に中央に′１子部品例えば表面
波素子ｕ２を載置固定する１極は増が設けられると共に
側壁から両主面にかけて設けられた電極０４）にコパー
ルなどからなるリードビンσωが銀−銅ロウや銀ロウに
より固定されている。That is, a single pole for mounting and fixing a child component such as a surface wave element u2 in the center on an alumina substrate is provided with an extension, and a lead bin σω made of copper or the like is provided on an electrode 04) provided from the side wall to both main surfaces. It is fixed with silver-copper solder or silver solder.
また、表面波素子ｕ１１極（１名）と電極αａはボンデ
ィング線によって超音波ボンディングされる。Further, the surface wave element u11 pole (one person) and the electrode αa are ultrasonically bonded using a bonding wire.
この電極ａ３１＋、１４）は上述の工程で作られている
。This electrode a31+, 14) is made by the process described above.
前記実施例では、無電解ニッケルメッキ液に硼素を含む
ニッケルメッキ液を使用したかリンの含有率を１％以下
出来る一般の無電解メッキ液も使用でき、また基板にア
ルミナ基板を使用したが、これに限定されるものではす
＜、他のセラミックス基板など工程中の加熱に耐える絶
縁基板であればよいし、その形状もＬＳＩ用など極めて
微細な電極も製造できることは勿論である。In the above embodiments, a nickel plating solution containing boron was used as the electroless nickel plating solution, or a general electroless plating solution with a phosphorus content of 1% or less could be used, and an alumina substrate was used as the substrate. However, the present invention is not limited to this, but any insulating substrate that can withstand heat during the process, such as other ceramic substrates, may be used, and it is of course possible to manufacture extremely fine electrodes such as those for LSI.
前述のように本発明の電子部品外囲器及びその製造方法
によれば、金の使用量が極めて少なくなる、複雑なパタ
ーンでもメンキが可能である、硼素を含むニッケルと高
純度された金メッキによりホンディング特性・ロウ付特
性が良好である、リン等の不純物が少ないのでレーザー
溶接シールが可能などの効果があり、その工業的価値は
極めて犬である。As mentioned above, according to the electronic component envelope and its manufacturing method of the present invention, the amount of gold used is extremely small, even complex patterns can be coated, and nickel containing boron and highly purified gold plating are used. Its industrial value is extremely high, as it has good honding and brazing properties, and because it contains little impurities such as phosphorus, it can be laser welded and sealed.
第１図乃至第３図は本発明の屯′ｆ部品外囲器の製造方
法を工程順に示す図であり、第１図はアルミナ基板の一
郁にタングステン粉末などを焼結して導体部を形成し−
た状態を示す断面図、第２図は導体部上にホウ素を含む
ニッケルメッキ層を形成した状態を示す断面図、第３図
はホウ素を含むニッケルメッキ層を再結晶化し金メッキ
層を形成した状態を示す断面図、第４図は出来上った電
子部品外囲器と表面波素子及びリードビンの関係を示す
分解ｆＡｒＡ図である。
１、ｌｌ・・・アルミナ基板 ２・・・導体部３・・
・ホウ素を含むニッケルメッキ層４・・・金メッキ層
１２・・・表面波素子１３ 、１４・・・電極
１５・・・リードビン代理人 弁理士
井 上 −男FIGS. 1 to 3 are diagrams showing the manufacturing method of the part envelope of the present invention in the order of steps, and FIG. form-
Figure 2 is a cross-sectional view showing a state in which a nickel plating layer containing boron is formed on the conductor part, and Figure 3 is a cross-sectional view showing a state in which a nickel plating layer containing boron is recrystallized to form a gold plating layer. FIG. 4 is an exploded fArA diagram showing the relationship between the completed electronic component envelope, surface wave element, and lead bin. 1, ll...Alumina substrate 2...Conductor part 3...
・Nickel plating layer 4 containing boron...Gold plating layer
12... Surface wave element 13, 14... Electrode
15...Leadbin agent patent attorney
Inoue - Male
Claims (4)
リブデン粉末もしぐはタングステンまたはモリプデ／を
主成分とする金属粉末を焼結してなる導体部と、前記導
体部に無電解メッキにより被着形成された硼素を含むニ
ッケル層と、前記硼素を含むニッケル層より低い温度で
再結晶化した金メッキ層とからなり、再結晶化された前
記金メツキ層上の一部に電子部品や前記電子部品からの
リード線を増付は得るよ５ＫＬ、たξとを特徴とする電
子部品外囲器。(1) A conductor part formed by sintering tungsten powder or molybdenum powder or a metal powder mainly composed of tungsten or molybdenum on a part of the insulating substrate, and a conductor part formed by electroless plating on the conductor part. It consists of a nickel layer containing boron, and a gold plating layer that is recrystallized at a lower temperature than the nickel layer containing boron. An electronic component enclosure characterized by an additional lead wire of 5KL and ξ.
ッケル層がリンの含有率が１％以下で硼素を０．２５〜
１％含む再結晶化後の厚さ２〜５μ厚であり、金メッキ
層が無電解メッキによる０、１−０．５μ厚であること
を特徴とする特許請求の範囲第１項記載の電子部品外囲
器。(2) The nickel layer containing boron formed by electroless plating has a phosphorus content of 1% or less and contains 0.25 to 0.25% of boron.
The electronic component according to claim 1, wherein the electronic component has a thickness of 2 to 5 μm after recrystallization containing 1%, and the gold plating layer has a thickness of 0.1 to 0.5 μm by electroless plating. envelope.
デン粉末もしくはタングステンまたはモリブデンを主成
分とする金属ペーストな被着後焼結し導体部を形成する
工程と、前記導体部に硼素を含むニッケル層を無電解メ
ッキにより被着形成する工程と、前記［累を含むニッケ
ル層を再結晶化する工程と、前記再結晶化された硼素を
含むニッケル層上に無電解メッキにより金メッキ層を被
着形成する工程と、前記金メッキ層を再結晶化する工程
とを少なくとも具備することを特徴とする電子部品外囲
器の製造方法。(3) A step of depositing tungsten powder, molybdenum powder, or a metal paste containing tungsten or molybdenum as a main component on a part of the insulating substrate and then sintering it to form a conductor portion, and forming a nickel layer containing boron on the conductor portion. a step of forming a deposit by electroless plating, a step of recrystallizing the nickel layer containing the nickel layer, and a step of depositing a gold plating layer on the recrystallized nickel layer containing boron by electroless plating. A method for manufacturing an electronic component envelope, comprising at least the steps of: and recrystallizing the gold plating layer.
９００’Ｏで行なわれ、金メッキ層の再結晶化が２００
℃〜３００’Ｏで行なわれることを特徴とする特許請求
の範囲第３項記載の電子部品外囲器の製造方法。(4) Recrystallization of nickel layer containing boron from 650°C
Recrystallization of the gold plated layer was carried out at 900'O.
4. The method for manufacturing an electronic component envelope according to claim 3, wherein the manufacturing method is carried out at a temperature of .degree. C. to 300'O.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11167482A JPS594062A (en) | 1982-06-30 | 1982-06-30 | Electronic part case and fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11167482A JPS594062A (en) | 1982-06-30 | 1982-06-30 | Electronic part case and fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS594062A true JPS594062A (en) | 1984-01-10 |
Family
ID=14567307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11167482A Pending JPS594062A (en) | 1982-06-30 | 1982-06-30 | Electronic part case and fabrication thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594062A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142547A (en) * | 1983-12-28 | 1985-07-27 | Ngk Spark Plug Co Ltd | Manufacture of ic package by electroless plating |
| JPS6249646A (en) * | 1985-08-29 | 1987-03-04 | Shinko Electric Ind Co Ltd | Lead frame |
| EP0269063A2 (en) * | 1986-11-25 | 1988-06-01 | Hitachi, Ltd. | Mullite ceramic multi-layered substrate and process for producing the same |
| JPH01214150A (en) * | 1988-02-23 | 1989-08-28 | Shinko Electric Ind Co Ltd | Manufacture of ceramic package |
| JPH0246753A (en) * | 1988-08-09 | 1990-02-16 | Ibiden Co Ltd | Electronic parts mounting board having lead frame |
| EP0496372A2 (en) * | 1991-01-24 | 1992-07-29 | Hoechst CeramTec Aktiengesellschaft | Process for coating a non-noble metal with a noble metal |
| US5838069A (en) * | 1996-04-11 | 1998-11-17 | Ngk Spark Plug Co., Ltd. | Ceramic substrate having pads to be attached to terminal members with Pb-Sn solder and method of producing the same |
| KR100719802B1 (en) * | 2005-12-28 | 2007-05-18 | 제일모직주식회사 | Highly reliable conductive particles for anisotropic conductive interconnection |
-
1982
- 1982-06-30 JP JP11167482A patent/JPS594062A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142547A (en) * | 1983-12-28 | 1985-07-27 | Ngk Spark Plug Co Ltd | Manufacture of ic package by electroless plating |
| JPS6249646A (en) * | 1985-08-29 | 1987-03-04 | Shinko Electric Ind Co Ltd | Lead frame |
| JPH0227816B2 (en) * | 1985-08-29 | 1990-06-20 | Shinko Elec Ind | |
| EP0269063A2 (en) * | 1986-11-25 | 1988-06-01 | Hitachi, Ltd. | Mullite ceramic multi-layered substrate and process for producing the same |
| JPH01214150A (en) * | 1988-02-23 | 1989-08-28 | Shinko Electric Ind Co Ltd | Manufacture of ceramic package |
| JPH0246753A (en) * | 1988-08-09 | 1990-02-16 | Ibiden Co Ltd | Electronic parts mounting board having lead frame |
| EP0496372A2 (en) * | 1991-01-24 | 1992-07-29 | Hoechst CeramTec Aktiengesellschaft | Process for coating a non-noble metal with a noble metal |
| EP0496372A3 (en) * | 1991-01-24 | 1994-02-09 | Hoechst Ceram Tec Ag | |
| US5838069A (en) * | 1996-04-11 | 1998-11-17 | Ngk Spark Plug Co., Ltd. | Ceramic substrate having pads to be attached to terminal members with Pb-Sn solder and method of producing the same |
| KR100719802B1 (en) * | 2005-12-28 | 2007-05-18 | 제일모직주식회사 | Highly reliable conductive particles for anisotropic conductive interconnection |
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