JPS5940531A - Heater for semiconductor wafer - Google Patents

Abstract

PURPOSE:To equalize heating and to remove unequal heating according to the variation of the resistance value and size of a wafer itself by a method wherein the wafer is heated while being rotated. CONSTITUTION:A protruded piece 2 is provided on the outside upper face of a slow-wave circuit type waveguide 1, a pin 3 is made to penetrate and is supported with rests 4, 4' on both the sides. A supporting plate 5 is fixed to the upper edge on the output side of the waveguide, and the upper face of the waveguide 1 is pressed by a screw 6 to rotate the waveguide around the pin 3. When the wafer having a large resistance value is to be heated, for example, the angle on the input side of the wafer is extended to make the distances between the surface of the waveguide to be differed on the input side and on the output side, a microwave is irradiated while rotating a board 7, and local absorption is avoided and irradiation is equalized. According to this construction, the wafer with size larger than the projected area of the waveguide can be heated equally without extending the irradiating area by a mode converter of antenna, etc.

Description

【発明の詳細な説明】 本発明は半導体ウエーノ・を洗浄した後の乾燥、レノス
ト塗布後の乾燥及び焼付等に用いるマイクロ波による加
熱装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave heating device used for drying semiconductor wafers after cleaning, drying and baking after applying lenost.

従来の化種の加熱装置は下記に示すように構成きれてい
た。即ち、 第７図に示す装置は、ホーン形アンテナＡによってマイ
クロ波の照射面積を広げ、照射面に設置（また台Ｂにウ
ェーハＣを載置して加熱する〇第２図に示す装置は特開
昭ｊ乙−ｇ００７７号として本特許出願人等が提業した
もので、両側板り、Ｄ間に梯子Ｅ、−一一を多鶴設けた
遅波回路型導波管Ｆで、ウエーノ１Ｃを移送式せながら
加熱する〇 第１図の装置は、照射面積を広げるため、充分なマイク
ロ波パワーを供給するが困難であると共に、円周方向に
対して′電界強度が異なるだめ、加熱むらとな抄、萬精
度が要求されるウェーハの加熱に実用化きれない最大の
原因となっていた。Conventional heating devices have been constructed as shown below. That is, the apparatus shown in Fig. 7 expands the irradiation area of microwaves using a horn-shaped antenna A, and is placed on the irradiation surface (also, a wafer C is placed on a table B and heated. This is a slow-wave circuit type waveguide F with plates on both sides and ladders E and -11 installed between D, and Ueno 1C. The device shown in Figure 1 is difficult to supply sufficient microwave power to widen the irradiation area, and the electric field strength differs in the circumferential direction, resulting in uneven heating. This was the main reason why this method could not be put to practical use in wafer heating, which requires high precision.

４２図に示す装置は、現在工業加熱用に割当てられた周
波数帯域（２￥ｊ　ＯＭ　Ｈｚ＋ｊ　ＯＭＨｚ）では、
その導波管サイズの関係上、最大３インチ（７１，２ｃ
ｍ　）程厩のウェーハしか加熱できず、従って、モード
変換器によって巾を広げる必要があり、充分なマイクロ
波パワーの供給が得られない。又、導波管の１１】を広
げないで、マイクロ波の進行方向と直角方向に被加熱物
を移動させる方法も考えられるが、遅波回路形導波管の
特性上、電界強匿の差による縦縞状の加熱むらができる
。The device shown in Figure 42 has the following characteristics in the frequency band currently allocated for industrial heating (2￥j OM Hz+j OMHz):
Due to the waveguide size, the maximum
m) Only a few wafers can be heated, so it is necessary to widen the width by means of a mode converter, and sufficient microwave power cannot be supplied. Another possible method is to move the object to be heated in a direction perpendicular to the direction of microwave propagation without widening the waveguide's 11], but due to the characteristics of slow-wave circuit type waveguides, there is a difference in electric field strength. This causes uneven heating in the form of vertical stripes.

本発明は前記従来の欠点に鑑み、ウェーハを回転きせる
ことにより加熱の均一化を図り、更にウェーハ自体の抵
抗値及びサイズの変化によるカロ熱むらｌｆ：除去する
ことができる半導体ウェーハ加熱装置を提供するのが目
的である。In view of the above-mentioned conventional drawbacks, the present invention provides a semiconductor wafer heating device that can uniformize heating by rotating the wafer, and can also eliminate heating unevenness caused by changes in the resistance value and size of the wafer itself. The purpose is to.

本発明の構成を第３図以下に示す実施例に基き詳細に説
明すると、遅波回路形溝波管（以下２ｊ４阪管と称す）
／の外上面に突片２を戻設し。The structure of the present invention will be explained in detail based on the embodiment shown in FIG. 3 and below.
Return the protruding piece 2 to the outer upper surface of /.

この突片２にビン３を挿通し、両側にＫＶ置（７た架台
グ、グ′でビン３を支持している。又、向架台り、グ′
の導波管出力側上端に支持板５に固定し、支持板ｊに調
節ネジ乙を螺甘し、先端で等波管／の上面を押圧し、ビ
ン３を中心にして導波管／を回ｒＡをせるようになって
いる。The bottle 3 is inserted through this projecting piece 2, and the bottle 3 is supported by a KV stand (7) on both sides.
Fix the upper end of the output side of the waveguide to the support plate 5, screw the adjustment screw B to the support plate j, press the top surface of the equal wave tube with the tip, and rotate the waveguide with the bin 3 as the center. It is designed so that it can be rotated rA.

父、導波言／の内１１１１１には駆動源（図示省略）に
よって回動するようになっている回転台７を設置し、回
転台７の上面にウェーハホルダーざを固定し、ウェーハ
ホルダーｇの内部にウェーハＣを嵌入支持するようにな
っている。A rotary table 7 which is rotated by a drive source (not shown) is installed in the waveguide 11111, a wafer holder is fixed on the top surface of the rotary table 7, and a wafer holder g is mounted. A wafer C is fitted and supported inside.

本英流側は前記のように構成したもので、導波管／で照
射されるマイクロ波は矢印の方向に流れるようになって
いる。The main flow side is configured as described above, and the microwave irradiated by the waveguide flows in the direction of the arrow.

第３図で明らかなように導波管／の巾よりもウェーハＣ
の巾が大である。この除、マイクロ波の照射に当って回
転台７を回＆ａせることにより、導波管の投影面積から
はみ出した部分が投影面積中に入り、導波管／特有の′
耐昇強度の雉によるカロ熱むらも改善できる。As is clear from Figure 3, the width of the wafer C is larger than the width of the waveguide.
The width is large. In addition to this, by rotating the rotary table 7 during microwave irradiation, the part protruding from the projected area of the waveguide enters the projected area, and the waveguide/specific '
It can also improve uneven heating caused by pheasant resistance.

又、２４波管による加熱において問題なのは、ウェーハ
自体の抵抗値又は大きさによって異なる導波管表向とウ
ェーハ表１との距Ｎ１１ｌである。Furthermore, a problem in heating with a 24-wave tube is the distance N11l between the front surface of the waveguide and the wafer surface 1, which varies depending on the resistance value or size of the wafer itself.

例えば、相互距離τ一定にし、て抵抗値の異なったウェ
ーハを加熱すると、抵抗徊゛の大きいものは、入力側で
局部的にエネルギーを吸収してしまい、出力側にはマイ
クロ波の進行が少くなって加熱されないという現象が発
生する。又、ウェーハの直径が異なるものを同様に刀口
熱すると。For example, when heating wafers with different resistance values while keeping the mutual distance τ constant, the one with a large resistance value will absorb energy locally on the input side, and the microwave will not travel as much on the output side. A phenomenon occurs in which the heat is not heated. Also, if wafers with different diameters are heated in the same way.

直径の大きいものは導波管に近すき過ぎて、前記と同様
に局部加熱現象が生ずる。If the diameter is large, it will be too close to the waveguide, and the same local heating phenomenon will occur as described above.

そこで、本発明においては、調節ネジ乙ケ締付は側へ回
ｄｊせることにより、ビン３ケ中心に導波管／を第９図
において反時計方向に回動きせ、導波管表面とウェーハ
表面との相互角厚が変化する。例えば、抵抗値の大きい
ウェーハを加熱するときは、ウェーハの入力側の角ｌｌ
を広げて導波管表向の入力側と出方側の距ｌ′ｉ１Ｆを
変えることにより局部的な吸収を避け、ウェーハ全体に
均一化されたマイクロ波が照射きれることになる。Therefore, in the present invention, by turning the adjusting screw Otsu to the side, the waveguide is rotated counterclockwise in FIG. 9 around the three bottles, and the waveguide surface and the wafer are The mutual angular thickness with the surface changes. For example, when heating a wafer with a large resistance value,
By widening the waveguide and changing the distance l'i1F between the input side and the output side on the surface of the waveguide, local absorption can be avoided and the entire wafer can be irradiated with uniform microwaves.

本発明は前記のような構成、作用を有すΦもので、ウェ
ーハを回転きせながら７Ｊ［］黙することによって、モ
ード変換器により、照射面積を広げることなく、導波管
投影面積よりも大きなサイズのウェーハを力０’ｒＡす
ることができると共に、加熱の均−化金図ることができ
る。The present invention has the above-mentioned structure and function, and by keeping the wafer 7J[] silent while rotating it, a mode converter is used to generate a beam that is larger than the projected area of the waveguide without expanding the irradiation area. It is possible to apply a force of 0'rA to a wafer of the same size and to evenly heat the wafer.

又、導波管表向とウェーハ表面の入力１則と出力側の相
互位ｉｔを変更することによって、抵抗値又はサイズの
異なるウェーハでも同じ装置で均一化された加熱が可能
である。Furthermore, by changing the input rule and the mutual position it on the output side between the waveguide surface and the wafer surface, uniform heating can be performed using the same device even for wafers with different resistance values or sizes.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の加熱装置の一例を示す断面図、渠２図は
他の例を示す斜視図、第３図は本発明に係る半導体ウェ
ーハ加熱装置の一実施例の側面図、第７図はその一部を
切欠いた正面図を夫々示す。 尚、図中／は遅波回路形溝波管、７は回転台、Ｃはウェ
ーハである。 ％吐出願人　島田理化工采株式会社FIG. 1 is a sectional view showing an example of a conventional heating device, FIG. 2 is a perspective view showing another example, FIG. 3 is a side view of an embodiment of the semiconductor wafer heating device according to the present invention, and FIG. 1 and 2 respectively show partially cutaway front views. In the figure, / is a slow wave circuit type groove wave tube, 7 is a rotary table, and C is a wafer. Applicant: Shimada Rika Kosai Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] （１）　　ノ４Ｍ回路形導波管のマイク檀波電界内にウ
ェー・・を保持する回転台を回転自在に設置したことを
特徴とする半導体ウエーノ・力１熱装置。 （財）　遅波回路形溝波管のマイクロ波′区界内にウェ
ー・・を保持する回転台を回転自在に設置［７、遅波回
路形溝波管とウエーノ・のいずれか一方の設置角度を可
変にしたことを％轍とする半導体ウエーノ・加熱装置。(1) A semiconductor wafer heat device characterized in that a rotary table for holding a wave within the microphone wave electric field of a 4M circuit type waveguide is rotatably installed. (Foundation) Rotatably install a rotary table that holds a wave within the microwave zone of a slow wave circuit type groove wave tube [7. Installation of either a slow wave circuit type groove wave tube or a wave wave tube. Semiconductor wafer/heating device whose angle is variable.