JP2011150911A - Microwave heating device - Google Patents

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JP2011150911A
JP2011150911A JP2010011657A JP2010011657A JP2011150911A JP 2011150911 A JP2011150911 A JP 2011150911A JP 2010011657 A JP2010011657 A JP 2010011657A JP 2010011657 A JP2010011657 A JP 2010011657A JP 2011150911 A JP2011150911 A JP 2011150911A
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waveguide
microwave
microwave heating
opening
heating apparatus
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Kazuhiro Fukuda
和浩 福田
Kazuki Taji
和喜 田地
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Konica Minolta Inc
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Konica Minolta Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a microwave heating device capable of uniformly heating a wide film base material with microwaves, which microwave heating device can be used to heat only the specific layer overlaid on the film base material by a heat treatment for an extremely short time period to crystalize the specific layer without giving heat damage to the film base material. <P>SOLUTION: An opening 2 longitudinally long along the direction of travel of a microwave is formed on part of a chassis surface of a rectangular waveguide 1 having a non-reflective termination opposite to a microwave introduction end. A guide roller is disposed close to and parallel with the opening 2. The film base material 4 is placed between the guide roller and the opening of the rectangular waveguide 1. The film base material 4 is held by the guide roller and is transferred while exposed to the microwave radiation thereby the film base material 4 is heated. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、マイクロ波加熱装置又はその加熱を利用した乾燥装置に関する。   The present invention relates to a microwave heating apparatus or a drying apparatus using the heating.

従来、マイクロ波を利用する加熱又は乾燥装置は、電磁シールドされた筐体内へマイクロ波を供給し、そのマイクロ波電力が供給された筐体内へ基材を搬送することにより基材の一部にマイクロ波を吸収させて発熱させる方法が一般的であった（例えば、特許文献１参照）。しかしこの様な方法では、エネルギーロスが大きく且つ基材上に均一なマイクロ波電力を供給することは難しく基材上で均一な温度を必要する場合には使用できない。   Conventionally, a heating or drying apparatus that uses microwaves supplies microwaves into a case that is electromagnetically shielded, and transports the base material into a case that is supplied with the microwave power. A method of generating heat by absorbing microwaves has been common (see, for example, Patent Document 1). However, in such a method, it is difficult to supply a uniform microwave power on the substrate with a large energy loss, and it cannot be used when a uniform temperature is required on the substrate.

一方、矩形状のマイクロ波導波管を利用する場合は、エネルギーロスを低減できるが、矩形状導波管の縦方向（矩形の長さ方向）にマイクロ波が進行した場合、この進行方向に直角な方向（矩形の巾方向）の電界強度が強くなることが知られており、同様に基材上に均一なマイクロ波電力を供給することは難しい。   On the other hand, when a rectangular microwave waveguide is used, energy loss can be reduced. However, when microwaves travel in the longitudinal direction (rectangular length direction) of the rectangular waveguide, they are perpendicular to the traveling direction. It is known that the electric field strength in a certain direction (rectangular width direction) becomes strong, and similarly, it is difficult to supply uniform microwave power on the substrate.

また導波管内のマイクロ波の伝播波長を長くするほど導波管の縦方向における電磁波エネルギーの効率が高くなることも知られているが、このマイクロ波の導波管内波長は導波管の横幅長さを狭くすると長くできる。通常使用されるマイクロ波（波長２．４５ＧＨ）の場合、導波管の巾（横の長さ）を６１ｍｍから６２ｍｍにしたとき管内伝播波長が一番長くなり電界強度が最大になる。即ち導波管に設ける開口部を導波管に対して横方向に配置することによって横方向に強力な電界強度を発生させることができるが、前記したように導波管の巾は６１〜６２ｍｍ程度に限定されるので、これ以上長く均一な電界が得られず、均一な加熱はできない。   It is also known that the longer the propagation wavelength of microwaves in the waveguide, the higher the efficiency of electromagnetic wave energy in the longitudinal direction of the waveguide. It can be lengthened by narrowing the length. In the case of a commonly used microwave (wavelength: 2.45 GH), when the width (lateral length) of the waveguide is changed from 61 mm to 62 mm, the propagation wavelength in the tube is the longest and the electric field strength is maximized. That is, a strong electric field strength can be generated in the transverse direction by arranging the opening provided in the waveguide in the transverse direction with respect to the waveguide. However, as described above, the width of the waveguide is 61 to 62 mm. Since it is limited to the extent, a uniform electric field cannot be obtained longer than this, and uniform heating cannot be performed.

特開２００３−２８３１１４号公報JP 2003-283114 A

本発明の目的は、幅広いフィルム基材に対し均一にマイクロ波加熱できるマイクロ波加熱装置を提供し、更に極短時間に処理することでフィルム基材上にコーティングされた特定層のみを加熱することによりフィルム基材への熱ダメージを発生させることなく緻密化させたり結晶化させることに対しても使用可能なマイクロ波加熱装置を提供することにある。   An object of the present invention is to provide a microwave heating apparatus capable of uniformly heating a wide range of film bases, and to heat only a specific layer coated on the film base by further processing in a very short time. Accordingly, an object of the present invention is to provide a microwave heating apparatus that can be used for densification or crystallization without causing thermal damage to the film substrate.

本発明の上記目的は、以下の構成により達成することができる。   The above object of the present invention can be achieved by the following configuration.

１．マイクロ波発生源で発生したマイクロ波を導入する反対側が無反射終端されている導波管を有するマイクロ波加熱装置であって、該導波管の筐体面の一部に、マイクロ波の進行方向に沿って縦長の開口部を設け、この開口部に近接し且つ平行にガイドローラーを併設し、該ガイドローラーと該導波管の開口部との間にフィルム基材を配置し、該ガイドローラーに該フィルム基材を保持し搬送しながらマイクロ波を照射することにより該フィルム基材を加熱することを特徴とするマイクロ波加熱装置。   1. A microwave heating apparatus having a waveguide having a reflection-free termination on the opposite side to which microwaves generated from a microwave generation source are introduced, and a microwave traveling direction on a part of a casing surface of the waveguide A longitudinally long opening is provided along with a guide roller adjacent to and parallel to the opening, and a film substrate is disposed between the guide roller and the waveguide opening, and the guide roller A microwave heating apparatus that heats the film substrate by irradiating microwaves while holding and transporting the film substrate.

２．前記縦長の開口部と前記導波管の内面との間に形成される狭窄された空間部分に、該狭窄された空間部分の電界強度を調整するための導電体を設けたことを特徴とする前記１に記載のマイクロ波加熱装置。   2. The constricted space formed between the vertically long opening and the inner surface of the waveguide is provided with a conductor for adjusting the electric field strength of the constricted space. 2. The microwave heating apparatus according to 1 above.

３．前記導電体と前記開口部との関係位置を調整する手段を併せ備えたことを特徴とする前記２に記載のマイクロ波加熱装置。   3. 3. The microwave heating apparatus according to 2 above, further comprising means for adjusting a relative position between the conductor and the opening.

４．前記狭窄された空間部分に設けた前記導電体を、前記導波管の縦軸方向に沿って複数個設け、該導電体と前記開口部との関係位置を前記導波管の外部から調整する手段を併せ設けることにより、前記導波管の縦軸方向に沿った電界強度分布を均整化できるようにしたことを特徴とする前記１〜３の何れか１項に記載のマイクロ波加熱装置。   4). A plurality of the conductors provided in the constricted space portion are provided along the longitudinal axis direction of the waveguide, and the position of the conductor and the opening is adjusted from the outside of the waveguide. 4. The microwave heating apparatus according to any one of items 1 to 3, wherein a means is also provided so that the electric field intensity distribution along the longitudinal axis direction of the waveguide can be made uniform.

５．前記導波管が偏平な矩形状導波管であることを特徴とする前記１〜４の何れか１項に記載のマイクロ波加熱装置。   5. 5. The microwave heating apparatus according to any one of 1 to 4, wherein the waveguide is a flat rectangular waveguide.

６．前記マイクロ波が、導波管の両端より導入されることを特徴とする前記１〜５の何れか１項に記載のマイクロ波加熱装置。   6). 6. The microwave heating apparatus according to any one of 1 to 5, wherein the microwave is introduced from both ends of the waveguide.

７．前記マイクロ波が、１００μｓｅｃ以下のパルス巾で供給されることを特徴とする前記１〜５の何れか１項にマイクロ波加熱装置。   7). 6. The microwave heating apparatus according to any one of 1 to 5, wherein the microwave is supplied with a pulse width of 100 μsec or less.

本発明によれば、導波管内を伝播するマイクロ波電磁エネルギーをフィルム基材に直接照射させることができ、更に処理時間もマイクロ秒オーダーでコントロールできることより、照射エネルギーを詳細に制御できることで、フィルム基材への熱ダメージも抑制でき且つ効率的に基材上に設けた特定の膜だけを加熱することが出来るため、熱に弱いフィルム基材上でも緻密な結晶化薄膜をえることが可能となった。   According to the present invention, it is possible to directly irradiate the film substrate with microwave electromagnetic energy propagating in the waveguide, and further, the processing time can be controlled in the order of microseconds, so that the irradiation energy can be controlled in detail. Since heat damage to the base material can be suppressed and only a specific film provided on the base material can be efficiently heated, a dense crystallized thin film can be obtained even on a heat-sensitive film base material. became.

更に導波管内の、空間導波路部の電界強度分布を、管の縦方向に沿って調整する手段を提供したので、導波管の縦方向加工歪及び基材吸収に基づく電界強度のバラツキも容易に調整することが可能となり、長さ方向に均一に加熱することができる。   Furthermore, since a means for adjusting the electric field strength distribution of the spatial waveguide portion in the waveguide along the longitudinal direction of the tube is provided, the variation in electric field strength due to the longitudinal processing strain of the waveguide and the absorption of the substrate is also provided. It can be easily adjusted and can be heated uniformly in the length direction.

本発明のマイクロ波発生装置の基本概念を示す斜視図である。It is a perspective view which shows the basic concept of the microwave generator of this invention. 本発明の基本概念に基づいて構成したマイクロ波発生装置の動作説明用側面図である。It is a side view for operation explanation of a microwave generator constituted based on the basic concept of the present invention. 本発明のマイクロ波導波路の電界強度を調整する機構の説明図である。It is explanatory drawing of the mechanism which adjusts the electric field strength of the microwave waveguide of this invention. 従来のマイクロ波加熱装置の作用説明のための動作説明用側面図である。It is a side view for operation | movement description for operation | movement description of the conventional microwave heating apparatus.

上記、問題点に対し、本発明者等は、導波管の側壁部にこの導波管の縦方向（マイクロ波の伝播方向）に沿ってスリット状の開口部を設け、このスリットの方向に沿って導波管の外に隣接して且つ平行にガイドローラーを併設し、該ガイドローラーと矩形状導波管開口部との間にフィルム基材を配置し、該ガイドローラーにフィルム基材を保持し搬送しながらマイクロ波を照射する加熱手段を考案し、本発明を成すに至った。   In response to the above problems, the present inventors provide a slit-like opening in the side wall of the waveguide along the longitudinal direction of the waveguide (the propagation direction of the microwave), and in the direction of the slit. A guide roller is provided adjacent to and parallel to the outside of the waveguide, and a film substrate is disposed between the guide roller and the rectangular waveguide opening, and the film substrate is disposed on the guide roller. The present inventors have devised a heating means for irradiating microwaves while holding and transporting the present invention.

本発明により導波管の横幅は前記によって制限されても縦長さは自由に長くでき、広い面積のフィルム基材をより効率良く均一に加熱又は加熱を利用した乾燥ができるようになった。   According to the present invention, even when the horizontal width of the waveguide is limited by the above, the vertical length can be freely increased, and a film substrate having a large area can be more efficiently and uniformly heated or dried using heating.

以下本発明の実施例を図面に基づいて説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１は、本発明マイクロ波加熱装置の基本構成を示す図で、マイクロ波の導波管１はアルミや真鍮などの導体で構成され、縦長さｙ横幅ａ厚さｂの偏平な矩形状の空洞型導波管で、矢印ＭＷの方向からマイクロ波が導入され管内を縦方向に進行する。２はこの導波管の偏平平面（Ｈ面）に設けられた縦長の開口部である。その開口部２に近接して且つ平行にフィルム基材４を保持するガイドローラー３が併設され、そのガイドローラーとマイクロ波導波管１に設けられた開口部２との間にフィルム基材４が配置されている。   FIG. 1 is a diagram showing a basic configuration of a microwave heating apparatus according to the present invention. A microwave waveguide 1 is made of a conductor such as aluminum or brass, and has a flat rectangular shape with a longitudinal length y, a lateral width a and a thickness b. In the hollow waveguide, microwaves are introduced from the direction of the arrow MW and travel in the longitudinal direction in the tube. Reference numeral 2 denotes a vertically long opening provided in the flat plane (H plane) of the waveguide. A guide roller 3 that holds the film base material 4 in proximity to and parallel to the opening 2 is provided side by side, and the film base material 4 is interposed between the guide roller and the opening 2 provided in the microwave waveguide 1. Has been placed.

図１において、導波管１へ導入されるマイクロ波の波長をλｏとしたとき、導波管内を伝播するマイクロ波の波長λｇは、次式を満足するように選定し、λｇが開口部長ｙ’より長くなるように導波管の幅ａを選定するのが望ましい。   In FIG. 1, when the wavelength of the microwave introduced into the waveguide 1 is λo, the wavelength λg of the microwave propagating in the waveguide is selected so as to satisfy the following formula, and λg is the opening length y It is desirable to select the waveguide width a so as to be longer.

Figure 2011150911
Figure 2011150911

εは誘電率、μは透磁率である。（ｒは、真空の値に対しての比を表す。たとえば、εｒ、μｒは、それぞれ比誘電率と比透磁率を表す。）
一般的に使われる周波数２．４５ＧＨｚ、波長１２０ｍｍのマイクロ波をこの導波管に送り込む場合は、上式によれば導波管幅ａを６１．３ｍｍに選定したとき導波管内のマイクロ波の波長λｇは２４６７ｍｍとなり、縦軸方向に十分長い波長のマイクロ波を走らせることができる。 ε is a dielectric constant, and μ is a magnetic permeability. (R represents the ratio to the vacuum value. For example, ε r and μ r represent the relative permittivity and the relative permeability, respectively.)
When a commonly used microwave having a frequency of 2.45 GHz and a wavelength of 120 mm is fed into this waveguide, according to the above equation, when the waveguide width a is selected to be 61.3 mm, the microwave in the waveguide The wavelength λg is 2467 mm, and a sufficiently long wavelength microwave can be run in the vertical axis direction.

図２は、図１の基本構成の側面図である。図２において５はマイクロ波発生源、６はマイクロ波誘導管、７は電磁波の反射部で反射波の波長を調整するための可動反射板８を備えている。この反射板８はプランジャー式になっており、位置を左右に調整することにより導波管内を進行するマイクロ波波長λｇを微調整することができ、これにより導波管内の電界強度を長さ方向全体に亘って均一になるように調整できる。   FIG. 2 is a side view of the basic configuration of FIG. In FIG. 2, 5 is a microwave generation source, 6 is a microwave guide tube, and 7 is a reflection part of electromagnetic waves, and includes a movable reflector 8 for adjusting the wavelength of the reflected wave. The reflecting plate 8 is of a plunger type, and the microwave wavelength λg traveling in the waveguide can be finely adjusted by adjusting the position to the left and right, thereby increasing the electric field strength in the waveguide. It can be adjusted to be uniform over the entire direction.

導波管内を伝播するマイクロ波電磁エネルギーが点線矢印ｍｅに示すようにフィルム基材（図示せず）へ放射される。   Microwave electromagnetic energy propagating in the waveguide is radiated to a film substrate (not shown) as indicated by a dotted arrow me.

図３は、導波管の厚みｂをある程度厚くした状態で、導波管内の下面の導波路空間ギャップｋを実質的に狭くし、この部分の電界強度を強くする手段を設けた実施例である。即ち導波管１の下壁面の内側に第２の導電体の壁板９を取り付け、この壁板の中央部付近９ａを図に示すように内側へ凹ませることにより、マイクロ波の伝播容積を充分大きく確保しつつギャップｋの部分の電界密度即ち電界強度を高めたものである。これにより導波管内のマイクロ波の電磁波エネルギーが強く作用し、フィルム基材によるエネルギー損失に伴う電界強度分布の補正を行い均一化させることができる。   FIG. 3 shows an embodiment in which means for increasing the electric field strength of this portion is provided by substantially reducing the waveguide space gap k on the lower surface in the waveguide with the waveguide thickness b being increased to some extent. is there. That is, the wall plate 9 of the second conductor is attached to the inside of the lower wall surface of the waveguide 1, and the vicinity 9a of the central portion of the wall plate is recessed inward as shown in the figure, thereby reducing the microwave propagation volume. The field density of the gap k, that is, the field strength is increased while ensuring a sufficiently large value. Thereby, the electromagnetic wave energy of the microwave in the waveguide acts strongly, and the electric field intensity distribution accompanying the energy loss due to the film base material can be corrected and made uniform.

尚１０は開口部下面の狭隘部空間（ギャップ部ｋ）に設けられた導電性ブラシで、このブラシ１０の上下位置をねじ機構１１によって導波管外から矢印方向に調整することにより、ギャップｋ部の電界強度を微調整する。このブラシ機構を紙面に垂直方向即ち開口部の長手方向（図２、ｙ’の方向）に沿って複数個設けておくことにより、電界強度の不均一性を調整することができる。   Reference numeral 10 denotes a conductive brush provided in a narrow space (gap part k) on the lower surface of the opening, and the gap k is adjusted by adjusting the vertical position of the brush 10 from the outside of the waveguide by the screw mechanism 11 in the direction of the arrow. Finely adjust the electric field strength of the part. By providing a plurality of brush mechanisms in the direction perpendicular to the paper surface, that is, along the longitudinal direction of the opening (the direction of y ′ in FIG. 2), the nonuniformity of the electric field strength can be adjusted.

尚、本発明に用いる導波管にはマイクロ波を管内へ誘導管などを介して導入するものであるが、必要に応じてこれに高周波コイルなどを付設して高周波電力を付加的に与え、導波管内の電磁波エネルギーを強めるようにしても良い。   The waveguide used in the present invention introduces microwaves into the tube via a guide tube or the like, and if necessary, a high frequency coil is attached to the waveguide to additionally provide high frequency power. The electromagnetic wave energy in the waveguide may be strengthened.

本発明のマイクロ波加熱装置は、矩形型導波管の縦軸方向に沿って安定したライン状のマイクロ波照射を行うことができるので、広い面積をもつ被処理物体に対しても短時間に効率的に加熱処理することが可能となる。   The microwave heating apparatus of the present invention can perform stable line-shaped microwave irradiation along the longitudinal direction of the rectangular waveguide, so that even a target object having a large area can be irradiated in a short time. It becomes possible to heat-process efficiently.

更にパルスマイクロ波を用いることで、極短時間での加熱処理も可能となることで、熱に弱い樹脂フィルム上にコーティングされた膜に対し有効に該薄膜部のみを発熱させることが出来るため、フィルム上で緻密な結晶化無機膜の形成などにも応用可能となる。   Furthermore, by using pulsed microwaves, it becomes possible to perform heat treatment in an extremely short time, so that only the thin film part can be effectively heated with respect to the film coated on the heat-sensitive resin film, It can also be applied to the formation of a dense crystallized inorganic film on a film.

図４は従来のマイクロ波加熱装置２０の動作説明用側面図である。マイクロ波遮断壁２２内にマイクロ波アンテナ２１が設置され、図示されないが、該アンテナにはマイクロ波電源が接続されている。該マイクロ波電源より供給された電力は、マイクロ遮断壁内に該アンテナよりマイクロ波エネルギーとして供給される。フィルム基材４は矢印方向に搬送されながら、マイクロ波によって加熱される。   FIG. 4 is a side view for explaining the operation of the conventional microwave heating apparatus 20. A microwave antenna 21 is installed in the microwave cutoff wall 22 and is not shown, but a microwave power source is connected to the antenna. The electric power supplied from the microwave power source is supplied as microwave energy from the antenna into the micro cutoff wall. The film substrate 4 is heated by microwaves while being conveyed in the direction of the arrow.

以下実施例により本発明を説明するが本発明はこれにより限定されるものではない。   EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited thereto.

実施例１
図１記載のマイクロ波加熱装置を用いて、１００μｍ厚みのポリエチレンテレフタレート（ＰＥＴ）上に酸化錫膜１５ｎｍがコーティングされたフィルムにマイクロ波を照射し酸化錫膜を加熱させた。 Example 1
Using the microwave heating apparatus shown in FIG. 1, microwaves were irradiated to a film in which a tin oxide film of 15 nm was coated on polyethylene terephthalate (PET) having a thickness of 100 μm to heat the tin oxide film.

装置条件は、
ロール径：１００ｍｍΦ
ロール幅：１５００ｍｍ
フィルム幅：１４５０ｍｍ
マイクロ波：（株）ニッシン製 マイクロ波電源 ＭＰＳ−３０Ｄ
（周波数２．４５ＧＨｚ）
導波管幅ａは６１．３ｍｍ
スリット間隙：１０ｍｍ
スリット幅：１４００ｍｍ
であり、フィルムをライン速度１０ｍ／ｍｉｎで処理を行った。 The equipment conditions are
Roll diameter: 100mmΦ
Roll width: 1500mm
Film width: 1450mm
Microwave: Nissin Corporation Microwave Power Supply MPS-30D
(Frequency 2.45 GHz)
Waveguide width a is 61.3mm
Slit gap: 10mm
Slit width: 1400mm
The film was processed at a line speed of 10 m / min.

加熱均一性の評価
酸化錫膜上に日油技研工業（株）製サーモラベル（５Ｓ−９５）を貼付け、加熱処理後の温度分布を巾手５０ｍｍ間隔で測定した。 Evaluation of heat uniformity A thermolabel (5S-95) manufactured by NOF Giken Co., Ltd. was pasted on the tin oxide film, and the temperature distribution after the heat treatment was measured at intervals of 50 mm in width.

加熱処理前の基材温度は室温の２５℃であったが、加熱処理後は巾手全域に渡り全て１０５℃以上１１０℃未満を示した。   The substrate temperature before the heat treatment was 25 ° C., which was room temperature, but after the heat treatment, all showed 105 ° C. or more and less than 110 ° C. over the entire width.

実施例２
実施例１に於いて、酸化錫膜の代わりに酸化チタン膜を１００ｎｍ真空蒸着した後、その上にＩＴＯ膜を１０ｎｍ真空蒸着したフィルムに代え、更にマイクロ波電源を（株）エーイーティー社製マイクロ波電源ＭＬ２０００Ｄ及びＭＨ２０００ＳをパルスジェネレーターＡＰＰＧでパルス駆動させて加熱処理を行った。 Example 2
In Example 1, instead of a tin oxide film, a titanium oxide film was vacuum-deposited with a thickness of 100 nm, and then an ITO film was vacuum-deposited with a thickness of 10 nm. Microwave power sources ML2000D and MH2000S were pulse-driven by a pulse generator APPG and subjected to heat treatment.

ここで用いたパルス条件は、パルス幅３μｓｅｃでパルス間隔を２ｍｓｅｃとした。   The pulse conditions used here were a pulse width of 3 μsec and a pulse interval of 2 msec.

加熱処理後の酸化チタン膜の屈折率は、処理前２．１であったものが、２．４５まで増加し、結晶構造を解析した結果、アナターゼ構造を示した。またこの時の基材フィルムは特に熱ダメージも無く良好であった。   The refractive index of the titanium oxide film after the heat treatment was 2.1 before the treatment, but increased to 2.45. As a result of analyzing the crystal structure, an anatase structure was shown. Further, the base film at this time was good without any thermal damage.

比較例
図４に示す一般的なマイクロ波ボックス内でマイクロ波を照射するマイクロ波加熱装置を用い実施例１と同様の加熱均一性を評価した結果、温度分布は９５℃以下を示すところも有れば１１５℃以上を示すところもあり、均一な加熱状況は確認できなかった。 Comparative Example As a result of evaluating the same heating uniformity as in Example 1 using a microwave heating apparatus that irradiates microwaves in a general microwave box shown in FIG. 4, the temperature distribution may be 95 ° C. or lower. In some cases, the temperature was 115 ° C. or higher, and a uniform heating condition could not be confirmed.

１ マイクロ波の導波管
２ 導波管の壁面に設けた縦長開口部
３ フィルム基材を保持するガイドローラー
４ フィルム基材
５ マイクロ波発生源
６ マイクロ波誘導管
７ マイクロ波反射部
８ 可動反射板
９ 導波管内の電界強度調整用第２の壁板（導電体）
１０ 導体ブラシ
１１ ねじ機構
２０ マイクロ波加熱装置
２１ マイクロ波アンテナ
２２ マイクロ波遮断壁 DESCRIPTION OF SYMBOLS 1 Microwave waveguide 2 Long opening provided in the wall surface of a waveguide 3 Guide roller holding a film base material 4 Film base material 5 Microwave generation source 6 Microwave induction tube 7 Microwave reflection part 8 Movable reflection Plate 9 Second wall plate (conductor) for electric field strength adjustment in the waveguide
DESCRIPTION OF SYMBOLS 10 Conductor brush 11 Screw mechanism 20 Microwave heating apparatus 21 Microwave antenna 22 Microwave cutoff wall

Claims (7)

マイクロ波発生源で発生したマイクロ波を導入する反対側が無反射終端されている導波管を有するマイクロ波加熱装置であって、該導波管の筐体面の一部に、マイクロ波の進行方向に沿って縦長の開口部を設け、この開口部に近接し且つ平行にガイドローラーを併設し、該ガイドローラーと該導波管の開口部との間にフィルム基材を配置し、該ガイドローラーに該フィルム基材を保持し搬送しながらマイクロ波を照射することにより該フィルム基材を加熱することを特徴とするマイクロ波加熱装置。   A microwave heating apparatus having a waveguide having a reflection-free termination on the opposite side to which microwaves generated from a microwave generation source are introduced, and a microwave traveling direction on a part of a casing surface of the waveguide A longitudinally long opening is provided along with a guide roller adjacent to and parallel to the opening, and a film substrate is disposed between the guide roller and the waveguide opening, and the guide roller A microwave heating apparatus that heats the film substrate by irradiating microwaves while holding and transporting the film substrate. 前記縦長の開口部と前記導波管の内面との間に形成される狭窄された空間部分に、該狭窄された空間部分の電界強度を調整するための導電体を設けたことを特徴とする請求項１に記載のマイクロ波加熱装置。   The constricted space formed between the vertically long opening and the inner surface of the waveguide is provided with a conductor for adjusting the electric field strength of the constricted space. The microwave heating apparatus according to claim 1. 前記導電体と前記開口部との関係位置を調整する手段を併せ備えたことを特徴とする請求項２に記載のマイクロ波加熱装置。   The microwave heating apparatus according to claim 2, further comprising means for adjusting a relative position between the conductor and the opening. 前記狭窄された空間部分に設けた前記導電体を、前記導波管の縦軸方向に沿って複数個設け、該導電体と前記開口部との関係位置を前記導波管の外部から調整する手段を併せ設けることにより、前記導波管の縦軸方向に沿った電界強度分布を均整化できるようにしたことを特徴とする請求項１〜３の何れか１項に記載のマイクロ波加熱装置。   A plurality of the conductors provided in the constricted space portion are provided along the longitudinal axis direction of the waveguide, and the position of the conductor and the opening is adjusted from the outside of the waveguide. The microwave heating device according to any one of claims 1 to 3, wherein the electric field strength distribution along the longitudinal axis direction of the waveguide can be made uniform by providing means. . 前記導波管が偏平な矩形状導波管であることを特徴とする請求項１〜４の何れか１項に記載のマイクロ波加熱装置。   The microwave heating apparatus according to any one of claims 1 to 4, wherein the waveguide is a flat rectangular waveguide. 前記マイクロ波が、導波管の両端より導入されることを特徴とする請求項１〜５の何れか１項に記載のマイクロ波加熱装置。   The microwave heating apparatus according to any one of claims 1 to 5, wherein the microwave is introduced from both ends of the waveguide. 前記マイクロ波が、１００μｓｅｃ以下のパルス巾で供給されることを特徴とする請求項１〜５の何れか１項にマイクロ波加熱装置。   The microwave heating apparatus according to claim 1, wherein the microwave is supplied with a pulse width of 100 μsec or less.
JP2010011657A 2010-01-22 2010-01-22 Microwave heating device Pending JP2011150911A (en)

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KR101387661B1 (en) 2012-05-14 2014-04-22 한국전기연구원 Microwave Heating Apparatus for Uniform Heating of Target Based on Near-cutoff Condition
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WO2013172620A1 (en) * 2012-05-14 2013-11-21 한국전기연구원 Microwave heating apparatus for uniformly heating objects based on near-cutoff condition
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KR101420246B1 (en) * 2012-10-26 2014-07-21 한국전기연구원 Microwave Heating Apparatus Based on Near-cutoff Condition Waveguide and Microwave Generator
KR101533628B1 (en) * 2013-10-31 2015-07-06 한국전기연구원 Heating Apparatus and Method For Large Heating Area Using Magnetic Field of Microwave

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