JPS594040A - Semiconductor substrate carrying method - Google Patents
Semiconductor substrate carrying methodInfo
- Publication number
- JPS594040A JPS594040A JP11283682A JP11283682A JPS594040A JP S594040 A JPS594040 A JP S594040A JP 11283682 A JP11283682 A JP 11283682A JP 11283682 A JP11283682 A JP 11283682A JP S594040 A JPS594040 A JP S594040A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- region
- wafer
- speed
- pores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は噴流ガスを用いた半導体基板の搬送方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method of transporting a semiconductor substrate using jet gas.
（ｂ） 技術の背景
半導体集積回路はシリコン（Ｓｉ ）のような単体半導
体或はガリウム・砒素（ＧａＡｓ）のような化合物半導
体の単結晶の薄層基板（以下ウェハ）を用いて形成され
ている０こ＼で半導体集積回路の量産方法にはバッチ処
理とインライン処理の２つの方法がある。(b) Background of the technology Semiconductor integrated circuits are formed using single crystal thin layer substrates (hereinafter referred to as wafers) of single semiconductors such as silicon (Si) or compound semiconductors such as gallium arsenide (GaAs). There are two methods for mass producing semiconductor integrated circuits: batch processing and inline processing.
すなわち前者は多数個のウエノ・を同時処理できる長所
はあるが、装備が大型化し、また膜厚などの成長条件が
異なる要求に対しては容易に追随できない欠点をもつ。That is, the former method has the advantage of being able to process a large number of wafers at the same time, but has the disadvantage that it requires larger equipment and cannot easily meet demands for different growth conditions such as film thickness.
一方後者は１個づつのウェハな順次に処理するもので多
数個を処理するには時間を要する欠点はあるが、成長条
件などの変更要求に対して比較的容易に対応できる長所
をもっている。On the other hand, the latter method sequentially processes one wafer at a time, and although it has the disadvantage of requiring time to process a large number of wafers, it has the advantage of being relatively easy to respond to requests for changes in growth conditions, etc.
こ＼でこれらの処理装置を繋いで行われる試料の搬送は
自動化の方向にあシ、カムを用いるウオーキングビーム
方式、メカニカル摺動方式、落下方式、ターンテーブル
方式、トレイ搬送力式、パイプレージ冒ン方式など各種
の方式がある。The transportation of samples that is performed by connecting these processing devices is moving towards automation, and there are various methods such as a walking beam method using a cam, a mechanical sliding method, a drop method, a turntable method, a tray transport force method, and a pipe slide method. There are various methods such as
然し半導体ウェハのように機械的衝撃に弱く、また不純
物汚染を嫌う材料の搬込には特別な注意が必要である。However, special care must be taken when transporting materials such as semiconductor wafers, which are sensitive to mechanical shock and are sensitive to impurity contamination.
本発明はガスの噴流を利用してウェハを搬送する機構に
関するもので、浮上した状態で搬送が行われるために使
用ガスの純度が読い限り汚染の危険性は女く最も安全な
搬送方法と云える。The present invention relates to a mechanism for transporting wafers using gas jets, and since the wafers are transported in a floating state, there is no risk of contamination as long as the purity of the gas used is determined, making it the safest transport method. I can say that.
（ｃ） 従来技術と問題点
第１図はエアートラックと云ゎゎる従来の搬送路の構成
を示すものて（５）は断面図、（Ｂ）は正面図である。(c) Prior Art and Problems Figure 1 shows the configuration of a conventional conveyance path called an air track. (5) is a sectional view, and (B) is a front view.
図において搬送路はステンレスなどがらなｐ諺。In the figure, the conveyance path is made of stainless steel.
径約１ ｍｒＲのガス吹きａｔ Ｌ孔１が搬送面に対し
傾斜をもって規則正しく設けられておシ例えは窒素ガス
（Ｎ、）全裏面よシ上面へ矢印３の方向に−吹き出させ
このガス圧によってウェハ２乏浮上さぜるものである。Gas blowing at L holes 1 with a diameter of about 1 mrR are provided regularly with an inclination to the conveying surface.For example, nitrogen gas (N) is blown out from the back side to the top side in the direction of arrow 3, and by this gas pressure. This is used to float the wafer 2.
こ＼で浮上したウェハ２けガス吹きυル孔１の傾斜方向
に移動するが、ガスの流綾七吹き出し孔１０角度にょク
ウェハ２の移動速度および加速度が微妙な１響を受は速
度および位置の精密な制御は困難である。The floating wafer 2 moves in the direction of the inclination of the gas blowing hole 1, but the moving speed and acceleration of the wafer 2 are affected by the subtle effects due to the gas flow direction and the angle of the blowing hole 10. precise control is difficult.
そこでウェハ２を停止位置に止めるためにはガス吹き出
し孔１の傾斜方向を変えまた真空チャックで固定するな
どの方法がとられているがウェハ搬送の正確な側御Ｆｉ
醍しかった〇
（ｄ） 発明の目的
本発明の目的は重力をウェハ搬送の駆動力とすることに
より異った重量および形状のウェハに対しても浮上圧力
の制御のみで速度とｆｉｔ ＆の正確な側力を可能とす
る搬送方式を提供するＫある〇（ｅ） 発明の構成
本発明の目的はガスが噴流する搬送路を移動方向へ上下
の勾配をもって形成し、重力加速度を駆動力としてウェ
ハを移動させる搬送力法により実現できる。Therefore, in order to stop the wafer 2 at the stop position, methods such as changing the inclination direction of the gas blowing hole 1 and fixing it with a vacuum chuck are used, but accurate side control Fi of wafer transport is used.
〇(d) Purpose of the Invention The purpose of the present invention is to use gravity as the driving force for wafer transport, so that even wafers of different weights and shapes can be transported with speed and accuracy by simply controlling the floating pressure. To provide a transfer method that enables a lateral force such as This can be realized by the conveying force method that moves the .
（ｆ） 発明の実施例
従来の搬送装置は第１図に示すようにガス吹き出し孔１
を搬送面に対し傾斜させて設けることによりウェハ２の
浮上と水平方向との移Ｆｌａｋ行わせていたのに対し、
本発明の方法はガス吹き出し孔は搬送面に直角に設けて
ウェハの浮上のみに使用しまたウェハの搬送１ｌ−ｊ：
搬送路を進行方向に傾斜させることにょ多生ずる重力加
速度にょシ行うものである。(f) Embodiment of the Invention The conventional conveying device has a gas blowing hole 1 as shown in FIG.
In contrast to the previous method, the wafer 2 was floated and moved in the horizontal direction by providing the wafer 2 at an angle with respect to the conveying surface.
In the method of the present invention, the gas blowing holes are provided perpendicularly to the transport surface and are used only for floating the wafer, and the wafer transport 1l-j:
This is to compensate for the gravitational acceleration that often occurs when the conveyance path is inclined in the direction of travel.
第２図は本発明に係るウェハ搬送路の構成を示すもので
Ａ領域は従来と同じ構成であってガス吹き出し孔１はウ
ェハ２を浮上させると共に初速を与えるだめ従来と同様
に吹き出し孔１は傾斜して設けられガスは矢印３の方向
に噴流しているが、それ以外の９ＥＸ２１１：路におい
てはｉ６角に設けられガスはｉｕＪ：に向は噴流してお
シ、Ｂ領域でに重力を用いて加速させ、Ｃ領域で肴速度
運動させ、Ｄ領域で減速させ、Ｅ領域で停止さすよう構
成されている。いまこの重力による移動全説明１−ると
次のようになる。FIG. 2 shows the configuration of the wafer transport path according to the present invention. Region A has the same configuration as the conventional one, and the gas blowing holes 1 are used to levitate the wafer 2 and give an initial velocity. It is installed at an angle and the gas is jetted in the direction of arrow 3, but in other 9EX211: areas, it is installed at the i6 corner and the gas is jetted in the iuJ: direction, and the gravity is applied in the B area. The device is configured to accelerate using the robot, move at an appetizing speed in the C region, decelerate in the D region, and stop in the E region. Now, the complete explanation of movement due to gravity 1 is as follows.
第３図は傾斜角θの搬送路を初速Ｖｏをもつウェハ２が
重力によフ移動する場合で（Ａ）は下シ勾配また（Ｂ）
は上り勾配の場合である。Figure 3 shows a case in which a wafer 2 with an initial velocity Vo is moved by gravity along a conveyance path with an inclination angle θ; (A) is a downward slope, and (B)
is for an uphill slope.
図においてウェハ２の移動方時の加速度はウェハ２の重
量に関わらすｇ（２）θで懺わされる。（但しｙは重力
加速度）いま初速Ｖｏでｔ秒後の速度をｖ（ｔＬ また
ｔ秒間に進む距離を５（−ｔ）とし、摩擦抵抗を無視す
ると、Ｖ（ｔ）および５（ｔ）は次式で表わすことがで
きる。In the figure, the acceleration when moving the wafer 2 is represented by g(2)θ, which is related to the weight of the wafer 2. (However, y is the gravitational acceleration.) If the initial velocity Vo is now, the velocity after t seconds is v(tL), and the distance traveled in t seconds is 5(-t), and if frictional resistance is ignored, V(t) and 5(t) are It can be expressed by the following equation.
下シ勾配の場合
Ｖ（ｔ）＝Ｖｏ＋Ｆａ）８θ・ｔ ・ （１）
Ｓ（ｔ）＝−ｇ可θφｔ２＋ Ｖｏ ｔ （２
）上り勾配の場合
ＶＣｔ）＝Ｖｏ−１！■θ・ｔ −（３）２
Ｓ（ｔ）＝Ｖｏｔ −−ｇａｓθ−ｔ −−（４）以
上のように速度９位置とも傾斜角θのみに依存し、気体
流ｔ１−およびウエノ・の重量に依らないので再現性の
よい制御ができるとと＼なる。In case of downward slope V(t)=Vo+Fa)8θ・t ・ (1)
S(t)=-gpossibleθφt2+ Vo t (2
) for uphill slope VCt)=Vo-1! ■θ・t −(3) 2 S(t)=Vot −−gasθ−t −−(4) As shown above, each of the nine speed positions depends only on the inclination angle θ, and the gas flow t1− and the weight of Ueno・This means that control with good reproducibility can be achieved because it does not depend on the
なおこの場合ウェハ２の搬送に際しての摩擦抵抗を無視
したが噴出するガス流により浮上し重力の水平成分によ
って搬送される本実施例のような場合はウェハ２と搬送
路との間はガスの薄膜があるのみで摩擦抵抗は非常に少
い０
本発明は第２図に示すように従来の方法で初速を与えた
後下り勾配を与えて加速し、その後等速で移動させた後
、上り勾配で減速させ停止させるものである。なお第２
図の実施例においてはＢ。In this case, frictional resistance was ignored when the wafer 2 was transported, but in the case of this embodiment where the wafer 2 floats due to the ejected gas flow and is transported by the horizontal component of gravity, there is a thin film of gas between the wafer 2 and the transport path. As shown in Fig. 2, the present invention uses the conventional method to give an initial velocity, then apply a downward slope to accelerate, then move at a constant speed, and then accelerate to an upward slope. This is used to decelerate and stop the vehicle. Furthermore, the second
B in the illustrated embodiment.
Ｃ，Ｄ各領域での摩擦による運動エネルギーの消費を考
慮してＥ領域の高さ’ｉＡ領域よシも低くしであるがウ
ェハ２がＥ領域に到達した時は充分に低速になっており
、ウエノ・２の停止は真空チャッりなどによυ撰傷を与
えずに行う９とができる。Considering the consumption of kinetic energy due to friction in each region C and D, the height of the E region is lower than that of the A region, but when the wafer 2 reaches the E region, the speed is sufficiently low. , Ueno-2 can be stopped without causing damage by vacuum chuck, etc.9.
（ｇ） 発明の効果
エアトラックを用いて行うウェハの搬送は従来重量およ
び大きさにより搬送条件が異りｔｔ＋ｌＩ御が困ａＩｃ
であったが重力ｋｌＪＡＮｂ力とする本発明の実施によ
り搬送速度および停止などの１Ｉｌｌ イ１ｌｉｌが容
易となった。(g) Effects of the invention Conventionally, wafer transport using an air track has different transport conditions depending on weight and size, making it difficult to control tt+lI.
However, by implementing the present invention in which the force of gravity is used, it has become easier to control the conveyance speed and stop.
第１図は従来の搬送装置６の（１す成で（Ａ）Ｃま断面
図、（Ｂ）は正面図、第２しＩＩ−を本発明に係る搬送
路の構成図また第３図（Ａｌ （Ｂ）ｔま傾斜した搬送
路におけるウェハの運動の説明図である。FIG. 1 is a sectional view of a conventional conveyance device 6 (1 component), (A) is a cross-sectional view from C, (B) is a front view, and FIG. Al (B) t is an explanatory diagram of the movement of a wafer in a tilted conveyance path.
Claims (1)
送装置においてガスが噴流する錠送路を移動方向へ上下
の勾配をもって形成し、電力加速度を駆動力として前記
基板を移動させることを特徴とする半導体基板の搬送力
法。A semiconductor device characterized in that, in a transfer device that levitates and moves a semiconductor substrate using jet gas, a lock feeding path through which gas flows is formed with a vertical gradient in the movement direction, and the substrate is moved using electric acceleration as a driving force. Substrate conveyance force method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283682A JPS594040A (en) | 1982-06-30 | 1982-06-30 | Semiconductor substrate carrying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283682A JPS594040A (en) | 1982-06-30 | 1982-06-30 | Semiconductor substrate carrying method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS594040A true JPS594040A (en) | 1984-01-10 |
Family
ID=14596743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11283682A Pending JPS594040A (en) | 1982-06-30 | 1982-06-30 | Semiconductor substrate carrying method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594040A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7601224B2 (en) | 2002-03-08 | 2009-10-13 | Asm America, Inc. | Method of supporting a substrate in a gas cushion susceptor system |
| US7691750B2 (en) | 2003-06-12 | 2010-04-06 | Asm International N.V. | Methods of forming films in semiconductor devices with solid state reactants |
| US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323599A (en) * | 1976-08-18 | 1978-03-04 | Seiwa Shiyouji Kk | Method of mounting fire alarm for sealed luggage body truck |
| JPS56169345A (en) * | 1980-04-30 | 1981-12-26 | Ibm | Rotary device for pneumatic track |
| JPS57128940A (en) * | 1981-02-04 | 1982-08-10 | Sony Corp | Heat treating method for substrate |
| JPS5840841B2 (en) * | 1976-12-10 | 1983-09-08 | 株式会社日立製作所 | microwave introduction flange |
-
1982
- 1982-06-30 JP JP11283682A patent/JPS594040A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323599A (en) * | 1976-08-18 | 1978-03-04 | Seiwa Shiyouji Kk | Method of mounting fire alarm for sealed luggage body truck |
| JPS5840841B2 (en) * | 1976-12-10 | 1983-09-08 | 株式会社日立製作所 | microwave introduction flange |
| JPS56169345A (en) * | 1980-04-30 | 1981-12-26 | Ibm | Rotary device for pneumatic track |
| JPS57128940A (en) * | 1981-02-04 | 1982-08-10 | Sony Corp | Heat treating method for substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7601224B2 (en) | 2002-03-08 | 2009-10-13 | Asm America, Inc. | Method of supporting a substrate in a gas cushion susceptor system |
| US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
| US7691750B2 (en) | 2003-06-12 | 2010-04-06 | Asm International N.V. | Methods of forming films in semiconductor devices with solid state reactants |
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