JPS5932435B2 - Method for manufacturing ribbon-shaped silicon crystals - Google Patents
Method for manufacturing ribbon-shaped silicon crystalsInfo
- Publication number
- JPS5932435B2 JPS5932435B2 JP14581581A JP14581581A JPS5932435B2 JP S5932435 B2 JPS5932435 B2 JP S5932435B2 JP 14581581 A JP14581581 A JP 14581581A JP 14581581 A JP14581581 A JP 14581581A JP S5932435 B2 JPS5932435 B2 JP S5932435B2
- Authority
- JP
- Japan
- Prior art keywords
- ribbon
- crystal
- shaped silicon
- silicon
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は、リボン状シリコン結晶の製造方法の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in a method for manufacturing ribbon-shaped silicon crystals.
一般に用いられているシリコン単結晶ウエノ１は、棒状
の単結晶インゴットとして引き上げられたものをウェハ
状にスライス切断し、その後に表面研磨して形成された
ものとなっている。A commonly used silicon single crystal ingot 1 is formed by pulling a rod-shaped single crystal ingot, slicing it into wafer shapes, and then polishing the surface.
このため、インゴットの約８０１ま不要に捨てられてい
る。For this reason, about 801 ingots are unnecessarily thrown away.
したがって、シリコン単結晶ウェハの製造には経済的に
大きな損失が伴なうばかりか工程数が多いので長時間を
要する問題があった。Therefore, manufacturing of silicon single crystal wafers not only involves a large economic loss but also requires a long time due to the large number of steps.
そこで、このような不具合を解消するために最近、原料
シリコンから直接的にリボン状シリコン結晶を製造する
方法が考えられている。In order to solve this problem, a method of directly producing ribbon-shaped silicon crystals from raw silicon has recently been considered.
このリボン状シリコン結晶を製造する方法は、第１図に
示すように、抵抗加熱炉１内で原料シリコンを溶解させ
、これによって形成されたシリコン融液２中に、一対の
板３ａ 、３ｂを平行配置してなるダイ４の下部を挿し
込み、上記ダイ４の上記板３ａ。As shown in FIG. 1, the method for manufacturing this ribbon-shaped silicon crystal involves melting raw silicon in a resistance heating furnace 1, and inserting a pair of plates 3a and 3b into the silicon melt 2 thus formed. Insert the lower part of the die 4 arranged in parallel to the plate 3a of the die 4.
３ｂ間に形成されたスロット５内に毛細管現象によって
シリコン融液を上昇させ、この上昇したシリコン融液に
種子結晶を接触させてダイ上端で種子付けし、上記種子
結晶を引き上げることによって連続的にリボン状シリコ
ン結晶６を製造するようにしている。A silicon melt is raised by capillary action into the slot 5 formed between 3b, a seed crystal is brought into contact with the rising silicon melt, the seed is attached at the upper end of the die, and the seed crystal is pulled up to continuously release the silicon melt. A ribbon-shaped silicon crystal 6 is manufactured.
なお、得られたリボン状シリコン結晶６はホイール７に
よって連続的に反転された後、レーザ加工装置８によっ
て一定長さに切断される。Note that the obtained ribbon-shaped silicon crystal 6 is continuously turned over by a wheel 7, and then cut into a fixed length by a laser processing device 8.
このような方法を用いるとリボン状シリコン結晶を直接
的にかつ連続的に製造することができる。Using such a method, ribbon-shaped silicon crystals can be produced directly and continuously.
しかしながら、上記のような製造方法にあっては、次の
ような問題があった。However, the above manufacturing method has the following problems.
すなわち、生産性を上げるには、引き上げ速度が大きけ
れば大きい程好ましいが、通常、３０ｍｍ／分以上の速
度で第２図ａに示すような一定幅のリボン状シリコン結
晶６を引き上げることは非常に困難である。In other words, in order to increase productivity, the higher the pulling speed, the better, but normally it is extremely difficult to pull a ribbon-shaped silicon crystal 6 of a constant width as shown in FIG. 2a at a speed of 30 mm/min or more. Have difficulty.
一般的には、リボン状シリコン結晶の幅を一定に保つに
は引き上げメニスカス部の温度制御および引き上げ速度
を制御すればよいが、前述のように、３０ｍｍ１分以上
の高速引き上げを行なわんとする場合には温度制御が非
常に困難なものとなる。Generally, in order to keep the width of the ribbon-shaped silicon crystal constant, it is sufficient to control the temperature of the pulling meniscus and the pulling speed, but as mentioned above, if high-speed pulling of 30 mm or more is required for 1 minute or more, temperature control becomes extremely difficult.
すなわち、引き上げ速度が３０ｍｒｒｔ１分以下の場合
は、リボン状シリコン結晶の引き上げメニスカス部の温
度制御によって幅を一定に保つことが可能であるが、引
き上げ速度が３０ｍｍ／分以上の場合においてメニスカ
ス部の温度制御によって幅を一定に保とうとしても、メ
ニスカス部、リボン結晶固液界面での熱的バランスがく
ずれ、この結果、固化が発生して引き上げが不能となる
。That is, when the pulling speed is 30 mrrt 1 minute or less, it is possible to keep the width constant by controlling the temperature of the pulled meniscus part of the ribbon-shaped silicon crystal, but when the pulling speed is 30 mm/min or more, the temperature of the meniscus part Even if an attempt is made to keep the width constant through control, the thermal balance at the meniscus portion and the ribbon crystal solid-liquid interface is disrupted, and as a result, solidification occurs and pulling becomes impossible.
また、メニスカス部の温度を一定に保った状態でリボン
状結晶を引き上げようとしても、第２図すに示すように
リボン状シリコン結晶６の両端ＰＩ、Ｐ２が徐々にやせ
細ったり、その他第２図ｃ、ｄ中にＰ３ 、 Ｐ４で示
すようにダイ上の左右温度の不均一に基くリボン形状の
異常が発生することが往々にしてあった。Furthermore, even if an attempt is made to pull up the ribbon-shaped crystal while keeping the temperature of the meniscus constant, both ends PI and P2 of the ribbon-shaped silicon crystal 6 gradually become thinner, as shown in FIG. As shown in P3 and P4 during c and d, ribbon shape abnormalities often occurred due to non-uniformity of the temperature on the left and right sides of the die.
本発明は、このような事情に鑑みてなされたもので、そ
の目的とするところは、極めて簡単な制御で高速引き上
げ時に起こり易いリボン形状の異常発生を解消でき、も
って生産性を向上させ得るリボン状シリコン結晶の製造
方法を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to provide a ribbon that can eliminate abnormalities in ribbon shape that tend to occur during high-speed pulling with extremely simple control, thereby improving productivity. An object of the present invention is to provide a method for manufacturing a shaped silicon crystal.
すなわち、本発明は、リボン状シリコン結晶を成長させ
て引き上げるに当り、ダイに形成されたスロットの幅よ
り小なる粒径の粒状の原料シリコンをスロットの上部か
ら補給場所を加味して補給することによって上記目的を
達成したものである。That is, in growing and pulling a ribbon-shaped silicon crystal, the present invention replenishes granular raw material silicon having a particle size smaller than the width of a slot formed in a die from the upper part of the slot, taking into account the replenishment location. The above objective has been achieved.
以下、本発明方法の一実施形態を図面を参照しながら説
明する。Hereinafter, one embodiment of the method of the present invention will be described with reference to the drawings.
第３図は本発明に係る製造方法を実施する装置の一例を
示すもので、第１図と同一部分は同一符号で示しである
。FIG. 3 shows an example of an apparatus for carrying out the manufacturing method according to the present invention, and the same parts as in FIG. 1 are designated by the same reference numerals.
したがって、重複する部分の説明は省略する。Therefore, the explanation of the overlapping parts will be omitted.
この装置にあっては、ダイ４の上方で、このダイ４を通
して引き上げられるリボン状シリコン結晶６０両側に、
それぞれの先端開口部が上記リボン状シリコン結晶６０
両端近傍のスロット５上に位置する関係に案内パイプ１
１ａ。In this device, above the die 4, on both sides of the ribbon-shaped silicon crystal 60 pulled up through the die 4,
Each tip opening has the above-mentioned ribbon-shaped silicon crystal 60.
The guide pipe 1 is positioned above the slot 5 near both ends.
1a.
１１ｂを配置し、これら案内パイプ１１ａ、１１ｂを介
して原料シリコン供給装置１２からスロット５０幅より
小径の粒状原料シリコンを一定時間おきに一定量ずつリ
ボン状シリコン結晶の固液界面近傍に落し込むようにし
ている。11b, and a certain amount of granular raw material silicon having a diameter smaller than the width of the slot 50 is dropped from the raw silicon supply device 12 through these guide pipes 11a and 11b into the vicinity of the solid-liquid interface of the ribbon-shaped silicon crystal at regular intervals. There is.
このように、リボン状シリコン結晶６の両側で固液界面
近傍に一定時間おきに一定量ずつ粒状原料シリコンを補
給するようにしている。In this way, a constant amount of granular raw material silicon is replenished near the solid-liquid interface on both sides of the ribbon-shaped silicon crystal 6 at regular intervals.
補給された粒状原料シリコンは、スロット５内のシリコ
ン融液に接触して溶解する。The supplied granular raw material silicon comes into contact with the silicon melt in the slot 5 and is dissolved.
したがって、粒状原料シリコンの補給によって実質的に
スロット５内のシリコン融液の上昇速度が速められるこ
とになり、引き上げられる部分、つまり結晶成長部分へ
良好に原料の補給が行なわれることになり、この結果、
第２図すに示した両端のヤセ細りゃ同図ｃ、ｄに示した
片側のヤセ細りの発生を防止することができる。Therefore, by replenishing the granular raw material silicon, the rising speed of the silicon melt in the slot 5 is substantially increased, and the raw material is well replenished to the part to be pulled, that is, the crystal growth part. result,
By thinning the edges at both ends as shown in FIG. 2, it is possible to prevent the thinning on one side as shown in c and d of the same figure.
実験によると、リボン状シリコン結晶の幅を８０ｍｍ、
リボン結晶引き上げ速度４０ｍｍ１分で引き上げた場合
、従来の製造方法では第４図中Ａで示すように８０７１
Ｌ７１引き上げて約２０係のリボン幅の減少が見られた
。According to experiments, the width of the ribbon-shaped silicon crystal is 80 mm,
When the ribbon crystal is pulled at a pulling speed of 40 mm and 1 minute, the conventional manufacturing method yields 8071 as shown by A in Figure 4.
After raising L71, a decrease in ribbon width of about 20 sections was observed.
これに対し、本発明製造方法を適用して、上記条件で、
かつリボン結晶の左右端の固液界面近傍０．５ ｕｍの
部分に粒状原料シリコンを０．２ｍｇｒずつ１秒間隔で
投入した場合には、第４図中Ｂで示すように均一な幅の
リボン状シリコン結晶を得ることができた。On the other hand, by applying the manufacturing method of the present invention, under the above conditions,
Furthermore, when 0.2 mgr of granular raw material silicon is injected into a 0.5 um area near the solid-liquid interface at the left and right ends of the ribbon crystal at 1 second intervals, a ribbon with a uniform width is formed as shown by B in Figure 4. We were able to obtain crystalline silicon crystals.
この結果から明らかなように、本発明に係る製造方法は
、生産性を向上させる上で極めて有効である。As is clear from these results, the manufacturing method according to the present invention is extremely effective in improving productivity.
なお、上述した実施例では、引き上げるリボン結晶の両
端近傍にスロット上から一定時間おきに一定量の粒状原
料シリコンを投入しているが、やせ細りを検出し、やせ
細りを開始した方何だけに粒状原料シリコンを投入して
もよい。In the above-mentioned embodiment, a certain amount of granular raw material silicon is injected from above the slot into the vicinity of both ends of the ribbon crystal to be pulled at regular intervals. Silicone may also be added.
この場合には、光学系等を組合せた幅検出器を必要とす
ることは勿論である。In this case, it goes without saying that a width detector combined with an optical system and the like is required.
以上詳述したように本発明によれば、複雑な制御を必要
とせずに、一定幅のリボン状結晶を高速度で引き上げる
ことができ、もって生産性の向上化に寄与できるリボン
状シリコン結晶の製造方法を提供できる。As detailed above, according to the present invention, ribbon-shaped silicon crystals with a constant width can be pulled at high speed without the need for complicated control, thereby contributing to improved productivity. We can provide manufacturing methods.
第１図は従来のこの種製造方法を説明するための図、第
２図ａ ｊ ｂ ｆｆ Ｃｔ ｄは従来の製造方法の問
題点を説明するための図、第３図は本発明の一実施例に
係る製造方法を実施する製造装置の要部を示す構成図、
第４図は本発明製造方法で製造されたリボン状シリコン
結晶の幅精度と従来の製造方法で製造されたリボン状シ
リコン結晶のそれとを比較して示す図である。
１・・・・・・抵抗加熱炉、２・・・・・・シリコン融
液、３ａ。
３ｂ・・・・・・板、４・・・・・・ダイ、５・・・・
・・スロット、６・・・・・・リボン状シリコン結晶、
１１ａ、１１ｂ・・・・・・案内パイプ、１２・・・・
・・原料シリコン供給装置。Fig. 1 is a diagram for explaining a conventional manufacturing method of this kind, Fig. 2 is a diagram for explaining problems in the conventional manufacturing method, and Fig. 3 is an example of an implementation of the present invention. A configuration diagram showing the main parts of a manufacturing device that implements the manufacturing method according to the example,
FIG. 4 is a diagram showing a comparison between the width precision of a ribbon-shaped silicon crystal produced by the production method of the present invention and that of a ribbon-shaped silicon crystal produced by a conventional production method. 1... Resistance heating furnace, 2... Silicon melt, 3a. 3b...Plate, 4...Die, 5...
...Slot, 6...Ribbon-shaped silicon crystal,
11a, 11b...Guide pipe, 12...
・・Raw material silicon supply device.
Claims (1)
の一部を挿込み、このダイの上記一対の板間に形成され
たスロット内に上記シリコン融液な毛細管現象で上昇さ
せるとともに上昇したシリコン融液に種子結晶を接触さ
せ、上記種子結晶を引き上げることによってリボン状シ
リコン結晶を長させるに当り、前記スロットの幅より小
なる粒径の粒状の原料シリコンを前記スロットの上部か
ら引き上げられるリボン結晶の両端近傍に補給すること
によってリボン状シリコン結晶の幅を制御するようにし
たことを特徴とするリボン状シリコン結晶の製造方法。1. A part of a die consisting of a pair of parallel plates is inserted into the silicon melt, and the silicon melt is raised by capillary action into the slot formed between the pair of plates of the die. In order to lengthen the ribbon-shaped silicon crystal by bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal, granular raw material silicon having a particle size smaller than the width of the slot is pulled up from the top of the slot. A method for producing a ribbon-shaped silicon crystal, characterized in that the width of the ribbon-shaped silicon crystal is controlled by supplying near both ends of the ribbon-shaped silicon crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14581581A JPS5932435B2 (en) | 1981-09-16 | 1981-09-16 | Method for manufacturing ribbon-shaped silicon crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14581581A JPS5932435B2 (en) | 1981-09-16 | 1981-09-16 | Method for manufacturing ribbon-shaped silicon crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5849691A JPS5849691A (en) | 1983-03-23 |
| JPS5932435B2 true JPS5932435B2 (en) | 1984-08-08 |
Family
ID=15393776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14581581A Expired JPS5932435B2 (en) | 1981-09-16 | 1981-09-16 | Method for manufacturing ribbon-shaped silicon crystals |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5932435B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185258A (en) * | 1982-04-26 | 1983-10-28 | Silver Seiko Ltd | Printer |
-
1981
- 1981-09-16 JP JP14581581A patent/JPS5932435B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5849691A (en) | 1983-03-23 |
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