JPS59232994A - Device for vapor phase crystal growth - Google Patents
Device for vapor phase crystal growthInfo
- Publication number
- JPS59232994A JPS59232994A JP10832483A JP10832483A JPS59232994A JP S59232994 A JPS59232994 A JP S59232994A JP 10832483 A JP10832483 A JP 10832483A JP 10832483 A JP10832483 A JP 10832483A JP S59232994 A JPS59232994 A JP S59232994A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- support
- rotating shaft
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ウニ・への表面にＳｉ ｆ（どの薄膜を気相
成長させるだめの装置に係り、特にウェーを載置するサ
セプタをサセプタ支えを介して回転軸に取付けるように
した気相成長装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an apparatus for vapor phase growth of SiF (whatever thin film) on the surface of sea urchins. The present invention relates to a vapor phase growth apparatus that is attached to a rotating shaft via a.
従来、前記のようにサセプタを回転軸に取付ける方式の
気相成長装置は、腐食や汚染の関係から回転軸にはステ
ンレス鋼を用い、さらにサセプタは高温に加熱されるだ
め、腐食や汚染の問題がなく、かつ耐熱性を有する石英
ガラス製のサセプタ支えを前記回転軸の先端に嵌着し、
このサセプタ支ｔにサセプタを係合させることにより該
サセプタを回転軸に取付けるようにしていた。しかしな
がら、石英ガラスは、強度が低くて割れ易く、さらに研
磨などによる機械加工が容易でないため、物を確実に支
持するような機械構造物として使用するのには不向きで
ある。また、石英ガラスは、熱膨張係数が０．５Ｘ１０
とステンレス鋼（３１６ステンレス鋼）のそれの１
７．５Ｘ１０ に比較して非常に小さいため、仮りに
常温においてすき間々く係合したとしても運転中の昇温
時には比較的大きなすき間を生じ、サセプタを確実に支
持することができない。このため、サセプタが回転に伴
って振れ、均一な膜厚分布や抵抗分布が得られ難く、再
現性に劣る。特に、サセプタをこれに沿って設けたＲＦ
’コイルにより誘導加熱する方式の装置の場合には、Ｒ
’Ｆコイルとサセプタとの間の間隔が変化するため、サ
セプタの温度分布を均一にすることが難かしくなり、温
度依存性の高い抵抗値がバラツキを生じ易くなり、サセ
プタの外周部は振れによる温度変化が大きいので、結晶
欠陥（スリップ）を生じ易くなる。Conventionally, in vapor phase growth apparatuses in which the susceptor is attached to the rotating shaft as described above, the rotating shaft is made of stainless steel due to corrosion and contamination concerns, and the susceptor is heated to high temperatures, resulting in corrosion and contamination problems. A susceptor support made of quartz glass that is free of heat and has heat resistance is fitted onto the tip of the rotating shaft,
By engaging the susceptor with this susceptor support t, the susceptor is attached to the rotating shaft. However, quartz glass has low strength, is easily broken, and is not easy to be machined by polishing or the like, so it is not suitable for use as a mechanical structure that reliably supports objects. Also, quartz glass has a coefficient of thermal expansion of 0.5X10
and one of that of stainless steel (316 stainless steel)
Since it is very small compared to 7.5×10 2 , even if they are engaged with a gap at room temperature, a relatively large gap will occur when the temperature rises during operation, making it impossible to support the susceptor reliably. For this reason, the susceptor oscillates as it rotates, making it difficult to obtain a uniform film thickness distribution and resistance distribution, resulting in poor reproducibility. In particular, the RF
'In the case of a device that uses induction heating with a coil, R
'F Because the distance between the coil and the susceptor changes, it becomes difficult to make the temperature distribution of the susceptor uniform, and the resistance value, which is highly temperature dependent, tends to vary, and the outer circumference of the susceptor Since the temperature changes are large, crystal defects (slips) are likely to occur.
本発明の目的は、前述したよう寿問題を解決するため、
腐食や汚染ｒ強く、かつ常温と高温との繰返しにも耐え
てサセプタをより強固に確実に支持することのできる気
相成長装置を提供するにある。The purpose of the present invention is to solve the above-mentioned longevity problem.
It is an object of the present invention to provide a vapor phase growth apparatus that is resistant to corrosion and contamination, and is capable of supporting a susceptor more firmly and reliably by withstanding repeated changes between room temperature and high temperature.
かかる目的を達成するだめの本発明は、サセプタをサセ
プタ支えを介して回転軸に取付けるようにした気相成長
装置において、前記サセプタ支えを、ＳｉＣ，Ａｊ！Ｎ
、 Ｓｉ３Ｎ４ あるいはこれらを主成分とし［２０３
ｔだばＣｅＯ２等の焼結助剤を添加してなるセラミック
ス焼結体もしくはＳ ｉ ３Ｎ４とＡ／ｚ０３の複合セ
ラミックス焼結体のうちのいずれか１つの材料によって
形成したものであり、さらに好ましくけサセプタ支えを
前記の材質にすると共に、回転軸をＴ１ もしくはＴｉ
合金にて形成したものである。To achieve this object, the present invention provides a vapor phase growth apparatus in which a susceptor is attached to a rotating shaft via a susceptor support, in which the susceptor support is made of SiC, Aj! N
, Si3N4 or with these as main components [203
It is more preferably formed from one of the following: a ceramic sintered body with a sintering aid such as CeO2 added thereto, or a composite ceramic sintered body of Si3N4 and A/z03. The susceptor support is made of the above material, and the rotating shaft is made of T1 or Ti.
It is made of alloy.
以下本発明の一実施例を示す第１図について説明する。 FIG. 1 showing one embodiment of the present invention will be described below.
１はサセプタ、２はサセプタ支え、３は回転軸、４はＲ
Ｆ’コイル、５はウェハである。前記サセプタ支え２は
１石英ガラスで々く、焼結助剤としてＹ ２０３を０．
５重量チ添加しだ５Ｉ３Ｎ４（以下単に、５１３Ｎ４と
して説明する）を常圧焼結 ５−
法により成形したものである。1 is the susceptor, 2 is the susceptor support, 3 is the rotating shaft, 4 is R
F' coil, 5 is a wafer. The susceptor support 2 is made of quartz glass and contains 0.00% Y203 as a sintering aid.
5I3N4 (hereinafter simply referred to as 513N4) to which 5% by weight of nitrogen was added was molded by the pressureless sintering method.
このＳｉ３Ｎ４は、製品により値が若干具なるが、第１
表に示すような物性を有している。なお、第１表には比
較のため、透明石英ガラスの物性を併記した。The value of this Si3N4 varies slightly depending on the product, but the first
It has the physical properties shown in the table. Note that, for comparison, Table 1 also lists the physical properties of transparent quartz glass.
表１表
第１表から明らかなようにＳｉ３Ｎ４は、石英ガラスに
比較して数倍の機械的強度を有するため、重量や荷重を
受ける機械構造物として十分使用に耐え、かつ焼結によ
って成形されるため、比較的容易に所望の形状に成形で
きると共に、研磨による機械加工が可能であるため、第
１図に示すように、止めねじ６を係合する穴７やキー８
を嵌入する溝９を形成することも可能である。As is clear from Table 1, Si3N4 has several times the mechanical strength of quartz glass, so it can withstand use as a mechanical structure that bears heavy weight and loads, and can be formed by sintering. Because of this, it can be relatively easily formed into a desired shape, and machining by polishing is possible.As shown in FIG.
It is also possible to form a groove 9 into which the material is inserted.
そこで、回転軸３に対するサセプタ支え２の嵌入精度を
高め、かつ止めねじ６などにより確実に固定することが
でき、サセプタ支え２とサセプタ１との係合精度をも同
様に高め、かつキー８などにより確実に固定することが
できる。Therefore, it is possible to increase the fitting accuracy of the susceptor support 2 to the rotating shaft 3 and to securely fix it with the set screw 6, etc., and to similarly increase the engagement accuracy between the susceptor support 2 and the susceptor 1, and to It can be fixed more reliably.
まだ、Ｓｉ３Ｎ４の熱膨張係数は、第１表に示したよう
に石英ガラスの約６倍と太きいため、昇温した場合に回
転軸３とサセプタ支え２との間に生ずる隙間も小さく押
えられ、前述したより確実な取付は関係ができることと
相まってサセプタ１の振れを小さく押えることができる
。However, as shown in Table 1, the coefficient of thermal expansion of Si3N4 is about six times higher than that of silica glass, so the gap that occurs between the rotating shaft 3 and the susceptor support 2 when the temperature rises can be kept small. In combination with the above-mentioned more reliable attachment and the ability to form a relationship, it is possible to suppress the vibration of the susceptor 1 to a small extent.
さらに才だ、回転軸３をステンレス鋼でなく、Ｔ１また
はＴｉ 合金とすれば、これらの熱膨張係数は小さく５
例えばＴｉ 合金（ＪＩＳ：５Ｔ−６０）の場合、４．
５ Ｘ １． Ｏ−６とＳｉ３Ｎ４の熱膨張係数に近い
ため、昇温時の隙間の発生を非常に小さく押えることが
できる。Even better, if the rotating shaft 3 is made of T1 or Ti alloy instead of stainless steel, the coefficient of thermal expansion of these materials will be smaller than 5.
For example, in the case of Ti alloy (JIS: 5T-60), 4.
5 X 1. Since the coefficient of thermal expansion is close to that of O-6 and Si3N4, the occurrence of gaps during temperature rise can be kept very small.
第２図は本発明の他の実施例を示すもので、サセプタ支
え２の同図において下端外周にＴｉ まだはＴｉ 合
金製のスリーブ１０を焼ばめしたものでちる。ＳＩ３Ｎ
４は機械的強度が高いだめこのようなことが可能であり
、この焼ばめによる締め代を気相成長のだめの昇温時に
も両者の間に隙間が生じない値にしておけば５両者の間
は常に確実に固定され、かつ回転軸３をＴ１寸たはＴｉ
合金製とすることによりスリーブ１０と回転軸３との間
の隙間の発生を押え、より確定にサセプタ支え２を回転
軸３に保持することができる。なお、第２図においては
、スリーブ１０と回転軸３を該回転軸３の回転により締
る方向のねじ１１にて固定するようにしたものである。FIG. 2 shows another embodiment of the present invention, in which a sleeve 10 made of Ti or Ti alloy is shrink-fitted to the outer periphery of the lower end of the susceptor support 2 in the same figure. SI3N
4 is possible due to its high mechanical strength, and if the interference caused by shrinkage fit is set to a value that does not create a gap between the two even when the temperature of the vapor growth chamber is increased, 5 can be achieved. The space between the two is always securely fixed, and the rotating shaft 3 is
By making it made of alloy, it is possible to suppress the generation of a gap between the sleeve 10 and the rotating shaft 3, and to more securely hold the susceptor support 2 on the rotating shaft 3. In FIG. 2, the sleeve 10 and the rotating shaft 3 are fixed with a screw 11 that is tightened by the rotation of the rotating shaft 3.
前述した実施例は、サセプタ支え２にＳＩ３Ｎ４を主成
分とし焼結助剤としてＹ２Ｏ３を添加したセラミックス
焼結体を用いた例を示したが、焼結助剤としてはＣｅＯ
２など他のものでもよく、また焼結助剤を用いなくても
よい。寸たＳＩ３Ｎ４０代りにＳｉＣ，Ａ／Ｎ の単独
捷たはこれらに前記のような焼結助剤を添加したものや
、さらにはＳｉ３Ｎ４とＡ／？２０３の複合セラミック
ス焼結体を用いても同様の効果が得られる。In the above embodiment, the susceptor support 2 is made of a ceramic sintered body mainly composed of SI3N4 and Y2O3 added as a sintering aid.
Other materials such as No. 2 may be used, and the sintering aid may not be used. Instead of SI3N40, SiC and A/N can be used alone or with the above-mentioned sintering aid added, or even Si3N4 and A/N can be used. Similar effects can be obtained by using a composite ceramic sintered body of No. 203.
以上述べたように本発明によれば、十分々機械的強度を
もってサセプタを回転軸に対して取付けることができ、
破損事故をほとんど皆無にできると共に、気相成長時に
もサセプタの振れの発生を押えることができ、このため
膜厚分布や抵抗分布をより均一にできる。さらに回転軸
、サセプタ支えならびにサセプタの各間をキー、ピン、
なじなどにより確実に固定できるため、サセプタの回転
を確実に制御することが可能になり、サセプタ上へ適宜
な間隔で配列されるウニ・・の自動装填や。As described above, according to the present invention, the susceptor can be attached to the rotating shaft with sufficient mechanical strength,
Not only can breakage accidents be almost completely eliminated, but also the occurrence of vibration of the susceptor can be suppressed during vapor phase growth, thereby making the film thickness distribution and resistance distribution more uniform. In addition, keys, pins,
Since the susceptor can be securely fixed by screwing, etc., it is possible to reliably control the rotation of the susceptor, allowing automatic loading of sea urchins arranged at appropriate intervals onto the susceptor.
該サセプタからのウニ・・の取出しが可能になるなどの
効果が得られる。また、サセプタ支えを前述したよう彦
セラミックス焼結体にしても腐食や汚染の問題はなく、
耐熱性および熱衝撃の点でも優れた効果が得られる。Effects such as being able to take out sea urchins from the susceptor can be obtained. Furthermore, even if the susceptor support is made of Hiko ceramics sintered body as mentioned above, there will be no problems of corrosion or contamination.
Excellent effects can also be obtained in terms of heat resistance and thermal shock.
９−9-
第１図は本発明による気相成長装置の一実施例を示す要
部断面図、第２図は本発明の他の実施例を示す要部拡大
断面図である。
■・・・サセプタ、 ２・・サセプタ支え。
３・回転軸、 ４・・・Ｒ１？’コイル、 ５・・
・ウェハ。
６・・・止めねじ、 ７・穴、 ８・・・キー、９
・・・キー溝、 １０・スリーブ、 １１・・ねじ
。
出願人 東芝機械株式会社
１０−FIG. 1 is a sectional view of a main part showing one embodiment of a vapor phase growth apparatus according to the present invention, and FIG. 2 is an enlarged sectional view of a main part showing another embodiment of the invention. ■...Susceptor, 2...Susceptor support. 3. Rotating axis, 4...R1? 'Coil, 5...
・Wafer. 6... Set screw, 7. Hole, 8... Key, 9
・・・Keyway, 10・Sleeve, 11・Screw. Applicant: Toshiba Machine Co., Ltd. 10-
Claims (1)
ようにした気相成長装置において、前記サセプタ支えを
、Ｓ ｉ Ｃ，Ａ／Ｎ、 Ｓ ｉ ３Ｎ４ あるいはこ
れらを主成分としＹ２Ｏ３ｔたはＣｅ０ｚ等の焼結助剤
を添加してなるセラミックス焼結体モジくはＳｉ３Ｎ４
とＡｌＯ３の複合セラミックス焼結体のうちのいずれか
１つの材料によって形成したことを特徴とする気相成長
装置。 ２、サセプタをサセプタ支えを介して回転軸に取付ける
ようにした気相成長装置において、前記サセプタ支えを
、ＳｉＣ，Ａ４Ｎ、 Ｓｉ３Ｎ４あるいはこれらを主成
分としｙ２ｏ３またはＣｅＯ２等の焼結助剤を添加して
なるセラミックス焼結体もしくはＳｉ３Ｎ４ とＡＡ
２０３ の複合セラミックス焼結体のうちのいずれか
１つの材料によって形成すると共に、回転軸をＴｉ
もしくはＴｉ合金によって形成することを特徴とする気
相成長装置。 ３、回転軸に嵌入する部分のサセプタ支え外周に、Ｔｉ
もしくはＴ１合金製のスリーブが焼ばめされ、この
スリーブが前記回転軸の穴に係合するように構成されて
いる特許請求の範囲第２項記載の気相成長装置。[Claims] 1. In a vapor phase growth apparatus in which a susceptor is attached to a rotating shaft via a susceptor support, the susceptor support is made of S i C, A/N, S i 3N4, or mainly composed of these. Ceramic sintered body module or Si3N4 made by adding a sintering aid such as Y2O3t or Ce0z
1. A vapor phase growth apparatus characterized in that it is formed of any one of the following materials: 2. In a vapor phase growth apparatus in which a susceptor is attached to a rotating shaft via a susceptor support, the susceptor support is made of SiC, A4N, Si3N4, or a sintering agent containing these as main components and adding a sintering aid such as y2o3 or CeO2. ceramic sintered body or Si3N4 and AA
203 composite ceramic sintered bodies, and the rotating shaft is made of Ti.
Alternatively, a vapor phase growth apparatus characterized in that it is formed of a Ti alloy. 3. Ti is applied to the susceptor support outer periphery of the part that fits into the rotating shaft.
Alternatively, the vapor phase growth apparatus according to claim 2, wherein a sleeve made of T1 alloy is shrink-fitted and this sleeve is configured to engage with the hole of the rotating shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10832483A JPS59232994A (en) | 1983-06-16 | 1983-06-16 | Device for vapor phase crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10832483A JPS59232994A (en) | 1983-06-16 | 1983-06-16 | Device for vapor phase crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59232994A true JPS59232994A (en) | 1984-12-27 |
Family
ID=14481814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10832483A Pending JPS59232994A (en) | 1983-06-16 | 1983-06-16 | Device for vapor phase crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232994A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636833A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Ceramics Co Ltd | Vapor growth apparatus |
| JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
| US5306895A (en) * | 1991-03-26 | 1994-04-26 | Ngk Insulators, Ltd. | Corrosion-resistant member for chemical apparatus using halogen series corrosive gas |
| JPH10189490A (en) * | 1996-09-23 | 1998-07-21 | Applied Materials Inc | High temperature resistor type heater |
| US6645303B2 (en) * | 1996-11-14 | 2003-11-11 | Applied Materials, Inc. | Heater/lift assembly for high temperature processing chamber |
| US6878211B2 (en) * | 2001-03-30 | 2005-04-12 | Ngk Insulators, Ltd. | Supporting structure for a ceramic susceptor |
| JP2015512565A (en) * | 2012-03-20 | 2015-04-27 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier with key |
| USD744967S1 (en) | 2012-03-20 | 2015-12-08 | Veeco Instruments Inc. | Spindle key |
| USD748591S1 (en) | 2012-03-20 | 2016-02-02 | Veeco Instruments Inc. | Keyed spindle |
-
1983
- 1983-06-16 JP JP10832483A patent/JPS59232994A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636833A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Ceramics Co Ltd | Vapor growth apparatus |
| JPS63140085A (en) * | 1986-11-29 | 1988-06-11 | Kyocera Corp | Film forming device |
| US5306895A (en) * | 1991-03-26 | 1994-04-26 | Ngk Insulators, Ltd. | Corrosion-resistant member for chemical apparatus using halogen series corrosive gas |
| EP1120817A2 (en) * | 1991-03-26 | 2001-08-01 | Ngk Insulators, Ltd. | Corrosion-resistant member |
| EP1120817A3 (en) * | 1991-03-26 | 2002-01-30 | Ngk Insulators, Ltd. | Corrosion-resistant member |
| JPH10189490A (en) * | 1996-09-23 | 1998-07-21 | Applied Materials Inc | High temperature resistor type heater |
| US6645303B2 (en) * | 1996-11-14 | 2003-11-11 | Applied Materials, Inc. | Heater/lift assembly for high temperature processing chamber |
| US6878211B2 (en) * | 2001-03-30 | 2005-04-12 | Ngk Insulators, Ltd. | Supporting structure for a ceramic susceptor |
| JP2015512565A (en) * | 2012-03-20 | 2015-04-27 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier with key |
| USD744967S1 (en) | 2012-03-20 | 2015-12-08 | Veeco Instruments Inc. | Spindle key |
| JP2016015492A (en) * | 2012-03-20 | 2016-01-28 | ビーコ・インストゥルメンツ・インコーポレイテッド | Wafer carrier with key |
| USD748591S1 (en) | 2012-03-20 | 2016-02-02 | Veeco Instruments Inc. | Keyed spindle |
| US9816184B2 (en) | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
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