JPS59229727A - Fine processing method of thin film - Google Patents
Fine processing method of thin filmInfo
- Publication number
- JPS59229727A JPS59229727A JP10394383A JP10394383A JPS59229727A JP S59229727 A JPS59229727 A JP S59229727A JP 10394383 A JP10394383 A JP 10394383A JP 10394383 A JP10394383 A JP 10394383A JP S59229727 A JPS59229727 A JP S59229727A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- low
- boiling point
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Magnetic Heads (AREA)
- Weting (AREA)
- Chemically Coating (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜磁気ヘッドを対象とするが、原理的には薄
膜を利用したデバイス全般を利用分野とすることができ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application Although the present invention is directed to thin film magnetic heads, in principle it can be applied to any device using thin films.
従来例の構成とその問題点
従来、半導体集積回路や薄膜磁気ヘッド等の各種薄膜デ
バイスにおいて薄膜のパターンニングを行う際、パター
ンニングを目的とする薄膜に適当なエツチング方法が存
在しない場合、或いはエツチング方法が存在してもエツ
チング法が他へ悪影響を及ぼすような場合、予めフォト
レジストを所望の形状にパターンニングを行い、この上
にパターンニングを目的とする簿膜を形成し、前記フオ
トレジストを溶かすリムーバー液によって、前記薄膜の
下層のフォトレジストから、その上に形成された膜を除
去することによってパターンロングを行うといういわゆ
るリフトオフ法を用いることが多かった。第１図（ａ）
〜（ｄ）は前記した従来のレジストによるりフトオフプ
ロセスを示したものである。すなわち、まず基板（或い
は下地膜）（Ｉ）の上に第１図（ａ）のようにフォトレ
ジスト層（２）を塗布し、その後第１図（ｂ）のように
レジストＪｌパター ン二のようにリムーバ液（４）の
中に浸してレジスト層ごと上部のパターンロングを目的
とする膜を除去するという微細加工法である。Conventional configurations and their problems Conventionally, when patterning thin films in various thin film devices such as semiconductor integrated circuits and thin film magnetic heads, there are cases where there is no suitable etching method for the thin film to be patterned, or when etching is performed. Even if a method exists, if the etching method has a negative effect on other etching methods, pattern the photoresist into the desired shape in advance, form a film for the purpose of patterning on this, and then remove the photoresist. A so-called lift-off method is often used in which a pattern is lengthened by removing the film formed thereon from the photoresist layer below the thin film using a remover solution. Figure 1(a)
-(d) show a lift-off process using the above-mentioned conventional resist. That is, first, a photoresist layer (2) is coated on the substrate (or base film) (I) as shown in FIG. 1(a), and then the second resist Jl pattern is applied as shown in FIG. This is a microfabrication method in which the resist layer is immersed in a remover liquid (4) to remove the upper film intended to lengthen the pattern along with the resist layer.
しかし、レジストを用いたり７トオフによるパターンロ
ング方法はレジスト塗布厚に限りがあるため、極めて膜
厚の大きい膜のリフトオフには困難を伴う。即ち第１図
（ｄ）過程で、薄膜が機械的切断しにくい。また、レジ
ストの耐熱温度は３００℃前後が一般的であり、それ以
上に表面が加熱された場合、レジストの硬化が著しくな
るため、リムーバ液に対して溶解しにくくなるだけでな
く、リフトオフそのものが困難になる。さらにまた、リ
ムーバ液の酸及び塩基度が他への悪影響の原因となる場
合もあるなどの問題点があった。However, since the pattern lengthening method using a resist or using a seven-tooth-off method has a limit on the resist coating thickness, it is difficult to lift off an extremely thick film. That is, in the process shown in FIG. 1(d), the thin film is difficult to mechanically cut. In addition, the heat resistance temperature of resist is generally around 300°C, and if the surface is heated above that temperature, the resist will harden significantly, which will not only make it difficult to dissolve in the remover liquid, but also cause lift-off itself. It becomes difficult. Furthermore, there is a problem that the acidity and basicity of the remover liquid may cause an adverse effect on others.
発明の目的
本発明は従来のリフトオフ法によっては困難な厚膜のパ
ターンロングを行い、且つ、前記ノぐターンニング膜の
形成による影響をできるだけ低減し、従来のフォトレジ
スト固有に必要だったところのリムーバ液を不要とする
薄膜のパターンロングを、フォトレジストの代りに低融
点、低沸点金属を用いて行うにある。OBJECTS OF THE INVENTION The present invention enables long thick film patterns, which are difficult to achieve with conventional lift-off methods, and reduces the influence of the formation of the turning film as much as possible, thereby eliminating the problems inherent in conventional photoresists. The purpose is to create a long thin film pattern that does not require a remover liquid by using a low melting point or low boiling point metal instead of a photoresist.
発明の構成
本発明は、基板あるいは下地膜上に各種マスク蒸着、マ
スク溶射、メッキ法またはエツチングにより低融点、低
沸点金属層のパタＴンニングを行い、前記低融点、低沸
点金属層上にパターンロングとする薄膜を形成し、その
後、前記低融点、低沸点金属層を、沸点以上の温度に加
熱しガス化させたり、沸点以上の温度をもつ液体によっ
たり、または高周波誘導加熱によって除去し、前記低融
点、低沸点金属層の金属をＧａ、工ｎ １Ｓｎ −、Ｐ
ｂ ｓＳｅ、Ｚｎ、０６，０８％ ｎｇＳＢｉ、’Ｉ’
ｅ、Ｇθ金属及び前記金属の合金としたことを特徴とす
る。Structure of the Invention The present invention involves patterning a low melting point, low boiling point metal layer on a substrate or a base film by various mask vapor deposition, mask spraying, plating or etching, and forming a pattern on the low melting point, low boiling point metal layer. After forming a long thin film, the low melting point, low boiling point metal layer is removed by heating to a temperature above the boiling point to gasify it, using a liquid having a temperature above the boiling point, or by high frequency induction heating. , the metal of the low melting point, low boiling point metal layer is Ga, 1Sn −, P
b sSe, Zn, 06,08% ngSBi, 'I'
e, Gθ metal, and an alloy of the above metals.
実施例の説明 第２図に本発明の薄膜の微細加工法を示す。Description of examples FIG. 2 shows the thin film microfabrication method of the present invention.
本発明は（ａ）図のように基板または下地膜（５）上に
予め低融点、低沸点金属層（６）を形成させる。このと
き低融点、低沸点金属層（６）は各種マスク蒸着、マス
ク溶射、メッキ法などによって形成するが、必要な場合
はエツチングによって形成する。この場合、溶滴をスピ
ンコードすることもでき得る。In the present invention, as shown in Fig. (a), a low melting point, low boiling point metal layer (6) is previously formed on a substrate or a base film (5). At this time, the low melting point, low boiling point metal layer (6) is formed by various mask vapor deposition, mask spraying, plating methods, etc., and if necessary, by etching. In this case, it may also be possible to spin-code the droplets.
特にマスク溶射は通常の金属及び合金では高温のプロセ
スとなるため薄膜形成プロセスとしては一般的ではない
が前記の場合ではこの問題がないという特徴をもつ。低
融点、低沸点金属層の膜厚は大きい方が後のパターンロ
ング方法において有利となる。また、低融点、低沸点金
属の膜厚は原理的に所望の厚さに形成しておく１ことが
可能である。In particular, mask thermal spraying is a high temperature process for ordinary metals and alloys, so it is not a common thin film forming process, but the above-mentioned case is characterized by not having this problem. A larger thickness of the low melting point, low boiling point metal layer is advantageous in the later pattern lengthening method. Furthermore, it is possible in principle to form the film of the low melting point and low boiling point metal to a desired thickness.
その後（ｂ）図のように、この上にパターンロングを目
的とする厚膜（７）を各種薄膜形成法によって形成する
。この際、蒸着膜を利用する場合には、特に前記低融点
、低沸点材料の沸点以上の温度に上げないことが大切で
ある。また、各種メッキ法を用いる場合は、メッキーの
影響を考慮する必要のある場合もあり得る。厚膜が形成
された後、低融点、低沸点金属（６）の沸点以上に基板
加熱を行うか、或いはまた高周波誘導加熱によって前記
低融点、低沸点金属のみを沸点以上に加熱することによ
ってパターンロングを目的とする厚膜を＜ａ＞図のよう
にガス化した低一点、低沸点金属の圧力によって微細加
工を行う。その結果（ｄ）図のよ、うに目的とする。膜
がパターンロングされる。Thereafter, as shown in Figure (b), a thick film (7) for the purpose of pattern length is formed thereon by various thin film forming methods. At this time, when using a vapor deposited film, it is particularly important not to raise the temperature above the boiling point of the low melting point or low boiling point material. Furthermore, when using various plating methods, it may be necessary to consider the influence of plating. After the thick film is formed, a pattern is formed by heating the substrate to a temperature above the boiling point of the low melting point, low boiling point metal (6), or by heating only the low melting point, low boiling point metal above the boiling point by high frequency induction heating. A thick film that is intended to be long is microfabricated using the pressure of a gasified low-point, low-boiling point metal, as shown in Figure <a>. As a result (d), the purpose is as shown in the figure. The film is pattern-lengthened.
また、前記低融点、低沸点材料の融点以上の適当な液体
によって既に述べたような第１図に示すいわゆるリフト
オフ法によって厚膜をパターンロングすることも可能で
ある。これ等の場合、前記低融点、低沸点金属の膜厚は
予め十分大きくしておくことができるため、容易に目的
とする膜のパターンニングが行えるものである。Furthermore, it is also possible to pattern-lengthen a thick film by the so-called lift-off method shown in FIG. 1 as already described using an appropriate liquid having a melting point higher than the melting point of the low-melting point or low-boiling point material. In these cases, the film thickness of the low-melting point, low-boiling point metal can be made sufficiently large in advance, so that the intended patterning of the film can be easily performed.
低融点、低沸点金属としては一般にＣｄ、Ｚｎ。Low melting point and low boiling point metals are generally Cd and Zn.
Ｓｅ、Ｏｓｓ Ｐｂｓ Ｈｇ、 Ｇａ、 Ｇｅ、Ｓ：ｎ
−を工ｎＸＴｅ。Se, Oss Pbs Hg, Ga, Ge, S:n
-EnginXTe.
Ｅｉ及びそれらの合金が知られているが、その融点或い
は沸点が、実用面を考えて高々４００℃までのものが望
ましい。Although Ei and alloys thereof are known, it is desirable that their melting point or boiling point be at most 400° C. from a practical standpoint.
実施例としてＧａ−工ｎ及びＰｂ−−Ｓｎ ＳＢｉ −
Ｐｂ合金等においてこれらの金属合金などの低沸点を利
用して縛２０３．５ｉ０２ 系の厚膜の微細加工に効果
を示すことがわかった。As examples, Ga-N and Pb--Sn SBi-
It has been found that the low boiling point of these metal alloys, such as Pb alloys, is effective in microfabrication of thick 203.5i02-based films.
発明の効果
本発明は低融点、低沸点金属の金属層の上にパターンニ
ングとする薄膜を形成するので、前記金属層の膜厚を厚
くしてもリフトでき、単に加熱するだけであるので、酸
などを用いないので、他に悪影響を与えない、などの効
果を生ずる。Effects of the Invention Since the present invention forms a thin film for patterning on a metal layer of a low melting point and low boiling point metal, it can be lifted even if the thickness of the metal layer is increased, and it can be simply heated. Since it does not use acids, it does not have any negative effects on others.
第１図は従来のリフトオフプロセス図、ツレぞれ（ａ）
図は基板或いは下地膜上にレジストを塗布する工程、（
ｂ）図はレジスト層をパターンニングする工程、（Ｃ）
図はパターンニングを目的とする膜の膜形成の工程、（
ｄ）図はリムーバ液による目的膜のり７ｈオフの工程、
第２図は本発明の低融点、低沸点金属を利用した微細加
工法を示す図、それぞれ（ａ）図は予めパターンニング
された低融点１低沸点金属の形成の工程、（ｂ）図はパ
ターンニングを目的とする薄膜の形成の工程、（Ｃ）図
は加熱による低融点、低沸点金属の蒸発気化によるパタ
ーンニング目的膜の微細加工の工程、（ｄ）図は微細加
工された目的膜、を示す。
１．５：基板 ２：フォトレジスト層 ３：パターンニ
ングを目的とする膜 ４：リムーバ液６：低融点、低沸
点金属層 ７：厚膜
特許出願人 松下電器産業株式全社代理人弁理士
阿 部 功第１図
第２図Figure 1 is a diagram of the conventional lift-off process, (a)
The figure shows the process of applying resist on the substrate or base film (
b) The figure shows the process of patterning the resist layer, (C)
The figure shows the process of forming a film for patterning (
d) The figure shows the process of removing the target film glue for 7 hours using remover liquid.
Figure 2 is a diagram showing the microfabrication method using low melting point and low boiling point metals of the present invention, respectively (a) figure is the process of forming a pre-patterned low melting point 1 low boiling point metal, (b) figure is The process of forming a thin film for patterning; (C) the process of microfabrication of the patterning target film by evaporation of a low-melting-point, low-boiling-point metal by heating; (d) the microfabricated target film; , is shown. 1.5: Substrate 2: Photoresist layer 3: Film for patterning 4: Remover liquid 6: Low melting point, low boiling point metal layer 7: Thick film patent applicant Abe, patent attorney representing Matsushita Electric Industrial Co., Ltd. Gong 1st figure 2nd figure
Claims (1)
溶射、メッキ法、またはエツチングにより低膜を形成し
、その後前記低融点、低沸点金属層を除去して、膜のパ
ターンニングを行うことを特徴とする薄膜の微細加工法
。 ２、 前記低融点、低沸点金属層を沸点以上の温度に加
熱しガス化させて除去することを特徴とする点金属の融
点以上の温度をもつ液体によりリフトオフを行うことを
特徴とする特許請求の範囲第１項記載の薄膜の微細加工
法。 ４ 前記低融点、低沸点金属を高周波誘導加熱によって
加熱して除去することを特徴とする特許請求の範囲第１
項記載の薄膜の微細加工法。 ５、 前記低融点、低沸点金属として、Ｇａ、工ｎ。 Ｓｎ、 Ｐｂ、 Ｓｅ、Ｚｎ、 Ｃｄ、 Ｏｓ、Ｈｇ、
Ｂｉ、 Ｔｅ。 Ｇｅ金属及び前記金属の合金とすることを特徴とする特
許請求の範囲第１項又は第２項又は第３項又は第４項記
載の薄膜の微細加工法。[Claims] 1. Forming a low film on a substrate or base film by various mask vapor deposition, mask spraying, plating, or etching, and then removing the low melting point and low boiling point metal layer to form a film pattern. A thin film microfabrication method that is characterized by performing thinning. 2. A patent claim characterized in that the low melting point, low boiling point metal layer is heated to a temperature above the boiling point and gasified to be removed, and the lift-off is performed using a liquid having a temperature above the melting point of the point metal. The thin film microfabrication method according to item 1. 4. Claim 1, characterized in that the low melting point, low boiling point metal is heated and removed by high frequency induction heating.
Microfabrication method of thin film described in Section 1. 5. As the low melting point, low boiling point metal, Ga, n. Sn, Pb, Se, Zn, Cd, Os, Hg,
Bi, Te. 5. The thin film microfabrication method according to claim 1, 2, 3, or 4, characterized in that it is a Ge metal and an alloy of the metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10394383A JPS59229727A (en) | 1983-06-09 | 1983-06-09 | Fine processing method of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10394383A JPS59229727A (en) | 1983-06-09 | 1983-06-09 | Fine processing method of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59229727A true JPS59229727A (en) | 1984-12-24 |
| JPH0572006B2 JPH0572006B2 (en) | 1993-10-08 |
Family
ID=14367521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10394383A Granted JPS59229727A (en) | 1983-06-09 | 1983-06-09 | Fine processing method of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59229727A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4964945A (en) * | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
| JPH03287789A (en) * | 1990-04-02 | 1991-12-18 | Matsushita Electric Ind Co Ltd | Material for fine working of thin film and production thereof |
| US5296270A (en) * | 1991-09-05 | 1994-03-22 | Custom Training Aids, Inc. | Process for making a thermally radiant surface |
| US5547557A (en) * | 1993-10-20 | 1996-08-20 | Matsushita Electric Industrial Co., Ltd. | Formation of electroconductive thin-film pattern |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676592A (en) * | 1979-11-26 | 1981-06-24 | Sony Corp | Method of forming metallic layer pattern |
-
1983
- 1983-06-09 JP JP10394383A patent/JPS59229727A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676592A (en) * | 1979-11-26 | 1981-06-24 | Sony Corp | Method of forming metallic layer pattern |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4964945A (en) * | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
| US5294476A (en) * | 1988-12-09 | 1994-03-15 | Minnesota Mining And Manufacturing Company | Patterning process and microparticles of substantially the same geometry and shape |
| JPH03287789A (en) * | 1990-04-02 | 1991-12-18 | Matsushita Electric Ind Co Ltd | Material for fine working of thin film and production thereof |
| US5296270A (en) * | 1991-09-05 | 1994-03-22 | Custom Training Aids, Inc. | Process for making a thermally radiant surface |
| US5547557A (en) * | 1993-10-20 | 1996-08-20 | Matsushita Electric Industrial Co., Ltd. | Formation of electroconductive thin-film pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572006B2 (en) | 1993-10-08 |
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