JPH0391928A - Pattern formation by lift-off process - Google Patents
Pattern formation by lift-off processInfo
- Publication number
- JPH0391928A JPH0391928A JP23021489A JP23021489A JPH0391928A JP H0391928 A JPH0391928 A JP H0391928A JP 23021489 A JP23021489 A JP 23021489A JP 23021489 A JP23021489 A JP 23021489A JP H0391928 A JPH0391928 A JP H0391928A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- thin film
- silicon
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000007261 regionalization Effects 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 4
- 239000002210 silicon-based material Substances 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007733 ion plating Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 208000002564 X-linked cardiac valvular dysplasia Diseases 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
Ｃ産業上の利用分野］
本発明は、パターン形成方法に係り、特に、基板温度を
１５０″Ｃ以上にして無機物薄膜を成膜する場合のリフ
トオフ法によるパターン形成法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application] The present invention relates to a pattern forming method, and in particular to a pattern forming method using a lift-off method when forming an inorganic thin film at a substrate temperature of 150"C or higher. It is something.
［従来の技術］
従来より、ウェットエッチング、ドライエッチング等の
化学エッチングが困難な薄膜に対して所定のパターンを
形成する方法としてリフトオフ法およびメタルマスク法
が知られている。[Prior Art] The lift-off method and the metal mask method are conventionally known as methods for forming a predetermined pattern on a thin film that is difficult to undergo chemical etching such as wet etching or dry etching.
リフトオフ法は、基板上にフォトレジストあるいは電子
線レジストを塗布した後、露光、現像を行って所望のレ
ジストパターンを形成し、その後、蒸着、スパッタ、Ｃ
ＶＤ１ イオンプレーテイング、あるいはＭＢＥ等の適
当な成膜方法により、基板の全面にわたって任意の無機
物を成膜した後、適当なアルカリまたは酸を含む溶剤で
当該レジストを除去し、レジストパターンが形成されて
いた以外の部分に当該無機物を残すことにより無機物の
パターンを形成する方法である。In the lift-off method, a photoresist or an electron beam resist is applied onto a substrate, and then exposed and developed to form a desired resist pattern.
VD1 After forming a film of any inorganic material over the entire surface of the substrate by an appropriate film forming method such as ion plating or MBE, the resist is removed with a solvent containing an appropriate alkali or acid to form a resist pattern. This is a method of forming an inorganic pattern by leaving the inorganic material in areas other than the original.
また、メタルマスク法は基板上にメタルマスクを配置し
た後、蒸着、スパッタ、ＣＶＤ１ イオンプレーティン
グあるいはＭＢＥ等の成膜方法により無機物を成膜し、
パターンを形成する方法である。In addition, in the metal mask method, a metal mask is placed on a substrate, and then an inorganic material is formed by a film forming method such as evaporation, sputtering, CVD1 ion plating, or MBE.
This is a method of forming patterns.
［発明が解決しようとする課題コ
５かしながら、リフトオフ法の場合には、一般に用いら
れるフォトレジストや電子線レジストは有機物であるた
め、レジストパターン形成後の無機物薄膜の成膜の際の
基板加熱温度が１５０℃以上になると、成膜後のレジス
ト剥離が非常に困難になるという問題がある。例えば、
高温超伝導セラミックス薄膜はウェットエッチングまた
はドライエッチングが困難なため、リフトオフ法による
パターン形成が望まれ、その際の成膜時の基板加熱温度
は一般的に５００″Ｃ以上の高温となるが、有機レジス
トを用いたリフトオフ法ではレジスト剥離が非常に困難
になるため、パターンを形成することはできないもので
ある。[Problems to be Solved by the Invention (5) However, in the case of the lift-off method, generally used photoresists and electron beam resists are organic materials, so the substrate used for forming the inorganic thin film after resist pattern formation is When the heating temperature is 150° C. or higher, there is a problem in that it becomes extremely difficult to remove the resist after film formation. for example,
Since wet etching or dry etching is difficult for high-temperature superconducting ceramic thin films, it is desirable to form patterns using the lift-off method. In the lift-off method using a resist, it is very difficult to remove the resist, so it is impossible to form a pattern.
これに対して、メタルマスク法では、基板およびマスク
材料を適当に選択することにより、成膜の際の基板加熱
温度を１０００℃以上にすることが可能ではあるが、メ
タルマスクの加工精度および基板とメタルマスクの密着
性に問題があるため、数十ミクロンオーダー以下の微細
パターンの加工には不適当である。On the other hand, in the metal mask method, by appropriately selecting the substrate and mask materials, it is possible to increase the substrate heating temperature during film formation to 1000°C or higher; Since there is a problem with the adhesion of metal masks, it is unsuitable for processing fine patterns on the order of tens of microns or less.
本発明は、上記の課題を解決するものであって、成膜の
際の基板加熱温度が１ ５ ０ ’Ｃ以上となる無機物
のＦ４膜について、数十ミクロンオーダー以下の微細パ
ターンを形成するリフトオフ法によるパターン形成方法
を提供することを目的とするものである。The present invention is intended to solve the above-mentioned problems, and is to perform a lift-off process to form a fine pattern on the order of tens of microns or less for an inorganic F4 film in which the substrate heating temperature during film formation is 150'C or higher. The purpose of the present invention is to provide a pattern forming method using a method.
［課題を解決するための手段］
上記の目的を達成するための本発明のリフトオフ法によ
るパターン形成方法を第１図を参照しつつ説明する。な
お、図中、１は基板、２は金属薄膜、３はケイ素系化合
物被膜、４はレジス｝［、５は無機物を示す。[Means for Solving the Problems] A pattern forming method using a lift-off method according to the present invention for achieving the above object will be described with reference to FIG. In the figure, 1 is a substrate, 2 is a metal thin film, 3 is a silicon-based compound coating, 4 is a resist}[, and 5 is an inorganic substance.
まず、第１図（ａ）に示すように、基板ｌ上に適当な金
属からなる金属薄膜２、ケイ素系化合物被膜３、および
レジスト膜４をこの順序に成膜する。First, as shown in FIG. 1(a), a metal thin film 2 made of a suitable metal, a silicon-based compound film 3, and a resist film 4 are formed in this order on a substrate l.
金属薄膜２の成膜は、蒸着、スパッタ、ＣＶＤ，あるい
はイオンプレーティングにより行うことができる。ケイ
素系化合物被膜３は、蒸着、スパッタ、ＣＶＤ１ ある
いはイオンプレーティングによりＳｉＯａ膜を成膜して
もよいし、もしくは、ケイ素系化合物及び添加剤を有機
溶剤に溶解した塗布液をスビンナー ディッピング、あ
るいは吹き付け等により塗布した後にベークすることで
ケイ素系被膜を形成してもよい。また、レジスト膜４は
フォトレジストもしくは電子線レジストを周知の適当な
方法で塗布することで形成することができる。The metal thin film 2 can be formed by vapor deposition, sputtering, CVD, or ion plating. The silicon-based compound film 3 may be formed by vapor deposition, sputtering, CVD1, or ion plating, or may be formed by dipping or spraying a coating solution in which a silicon-based compound and additives are dissolved in an organic solvent. A silicon-based film may be formed by baking after coating. Further, the resist film 4 can be formed by applying a photoresist or an electron beam resist by a known appropriate method.
次に、所望のパターンを露光後現像してレジストパター
ン形成し、ケイ素系化合物被膜３をドライエッチングま
たはウェットエッチングした後、レシストパターンを剥
離する。これにより、第１図（ｂ）に示すように、金属
薄膜２の上に設計線幅に従ったケイ素系化合物パターン
３′が形成される。Next, a resist pattern is formed by exposing and developing a desired pattern, dry etching or wet etching the silicon-based compound film 3, and then peeling off the resist pattern. As a result, as shown in FIG. 1(b), a silicon-based compound pattern 3' is formed on the metal thin film 2 in accordance with the designed line width.
次に、ウェットエッチングもしくは等方性ドライエッチ
ングにより金属薄膜２をエッチングするが、この際、エ
ッチングをオーバーエッチング気味に行う。これにより
、金属薄膜２のパターンは設計線幅より細くなるが、こ
のとき、等方性ドライエッチングを行った場合には、第
１図（Ｃ）に示すように金属パターン２′には等方性ド
ライエッチングの性質によりアンダーカットが生じる。Next, the metal thin film 2 is etched by wet etching or isotropic dry etching, but at this time, the etching is performed with a slight overetching. As a result, the pattern of the metal thin film 2 becomes thinner than the designed line width, but if isotropic dry etching is performed at this time, the metal pattern 2' becomes isotropic as shown in FIG. 1(C). Undercuts occur due to the nature of dry etching.
以上の方法により設計線幅通りのケイ素系化合物パター
ン３′ と設計線幅より細く、アンダーカットが生じた
金属パターン２′が一体となった逆テーバーパターンが
形成される。By the above method, an inverted Taber pattern is formed in which the silicon compound pattern 3' having the designed line width and the metal pattern 2' which is thinner than the designed line width and has undercuts are integrated.
次に、第１図（ｄ）に示すように、当該基板１の全面に
わたり、成膜の際の基板加熱温度が１５０℃以上である
無機物５を、蒸着、スバッタ、ＣｖＤ１ イオンプレ
ーティングあるいはＭＢＥ等により成膜する。なお、こ
の時の基板加熱温度は基板１および金属薄膜２の材料に
依存するため、適当な材料を選択することにより１００
０℃以上の基板加熱温度も可能となる。Next, as shown in FIG. 1(d), an inorganic material 5 whose substrate heating temperature during film formation is 150° C. or higher is applied over the entire surface of the substrate 1 by vapor deposition, sputtering, CvD1 ion plating, MBE, etc. The film is formed by Note that the substrate heating temperature at this time depends on the materials of the substrate 1 and the metal thin film 2, so by selecting appropriate materials,
It is also possible to heat the substrate at a temperature of 0° C. or higher.
このようにして任意の無機物５を成膜した後、ウェット
エッチングにより金属パターン２′を除去すると、第１
図（ｅ）に示すように無機物５のパターンが形成される
。なお、このとき、金属パターン２′は逆テーパー状に
なっており、成膜した無機物５が金属パターン２′の側
面には付着しないため、エッチング液が金属パターン２
′に直接触れ、金属パターン２′の除去は非常に容易で
ある。After forming the arbitrary inorganic material 5 in this way, when the metal pattern 2' is removed by wet etching, the first
A pattern of inorganic material 5 is formed as shown in Figure (e). Note that at this time, the metal pattern 2' has a reverse tapered shape, and the formed inorganic substance 5 does not adhere to the side surface of the metal pattern 2', so the etching solution does not cover the metal pattern 2'.
It is very easy to remove the metal pattern 2' by directly touching the metal pattern 2'.
リフトオフ後の、無機物パターンの線幅は薄膜パターン
３′の線幅に従うため、ケイ素系化合物パターン３′の
線幅を設計線幅に形成することにより、設計線幅通りの
無機物パターンを形成することが可能となる。After lift-off, the line width of the inorganic pattern follows the line width of the thin film pattern 3', so by forming the line width of the silicon-based compound pattern 3' to the designed line width, an inorganic pattern with the designed line width can be formed. becomes possible.
［実施例］ 以下、本発明の実施例を説明する。[Example] Examples of the present invention will be described below.
（１００）単結晶Ｓｉに蒸着法によりＡＩを１μｍ厚に
蒸着した後、ＳｉＯ２をスパッタで、０．２μｍ厚に成
膜した基板上にフォトレジストＡｚ−１３５０をスピン
ナーにより０． ５μｍ厚に塗布し、９０℃で３０分
間乾燥した後、７００μｍ間隔のラインアンドスペース
パターン、即ちストライプパターンを露光し、現像して
フォトレジストパターンを形成し、ｌ２０゜Ｃで４０分
間乾燥させた後、ドライエッチングにょりＳｉＯｚのエ
ッチングを行い、設計線幅通りのＳｉｆｔパターンを形
成した。(100) After depositing AI to a thickness of 1 μm on single-crystal Si using a vapor deposition method, photoresist Az-1350 was deposited using a spinner on the substrate on which SiO2 was deposited to a thickness of 0.2 μm by sputtering. After coating to a thickness of 5 μm and drying at 90°C for 30 minutes, a line and space pattern, i.e., a stripe pattern, with 700 μm intervals was exposed and developed to form a photoresist pattern, and dried at 120°C for 40 minutes. Then, SiOz was etched by dry etching to form a Sift pattern with the designed line width.
その後、レジストをアセトンで剥離後、リン酸水溶液で
Ａ１のエッチングをオーバーエッチング気味に行い、Ａ
ＩとＳｉＯ２が一体となった逆テーバー状のパターンを
形成した。この基板上にＹ−Ｂａ−Ｃｕ−０薄膜をＲＦ
スパッタを用いて、基板温度５ ０ ０ ’Ｃ， タ
ーゲットＹ： Ｂａ： Ｃｕ＝１： ２： ３、酸素雰
囲気で、Ａｒガスによりスパソタを行い、上記無機物を
０． ４μｍ厚に成膜した。その後、ＮａＯＨ水溶液
でＡｌパターンを除去すると、設計線幅通りのＹ−Ｂａ
−Ｃｕ−０薄膜のパターンが形成されたことが確認され
た。After that, after peeling off the resist with acetone, A1 was etched with a phosphoric acid aqueous solution with a slight overetching.
An inverted tapered pattern in which I and SiO2 were integrated was formed. A Y-Ba-Cu-0 thin film was deposited on this substrate by RF
Using sputtering, a substrate temperature of 500'C, a target Y: Ba: Cu = 1: 2: 3, and an oxygen atmosphere were subjected to sputtering with Ar gas to reduce the inorganic material to 0. A film was formed to a thickness of 4 μm. After that, when the Al pattern is removed with a NaOH aqueous solution, the Y-Ba
It was confirmed that a -Cu-0 thin film pattern was formed.
［発明の効果コ
以上の説明から明らかなように、本発明によれば、金属
とケイ素系化合物のパターンを用いたリフトオフ法によ
り、エッチングが困難で、成膜する際の基板加熱温度が
１５０℃以上の無機物の薄膜についてのパターン形成が
可能となる。[Effects of the Invention] As is clear from the above description, according to the present invention, etching is difficult and the substrate heating temperature during film formation is 150°C due to the lift-off method using a pattern of metal and silicon-based compounds. Pattern formation of the above inorganic thin film becomes possible.
第１図は本発明のリフトオフ法によるパターン形成方法
の１実施例を説明するための図である。
１・・・基板、２・・・金属薄膜、３・・・ケイ素系化
合物被膜、４・・・レジスト膜、５・・・無機物。
出 願 人 大日本印刷株式会社FIG. 1 is a diagram for explaining one embodiment of the pattern forming method using the lift-off method of the present invention. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Metal thin film, 3...Silicon-based compound film, 4...Resist film, 5...Inorganic substance. Applicant: Dai Nippon Printing Co., Ltd.
Claims (1)
スト膜をこの順序に形成し、露光、現像を行いレジスト
パターンを形成し、ドライエッチングもしくはウェット
エッチングによりケイ素系化合物パターンを形成し、レ
ジストパターンを剥離後、金属薄膜のウェットエッチン
グを行い、ケイ素系化合物と金属薄膜から成るパターン
を形成し、当該ケイ素系化合物と金属薄膜から成るパタ
ーンをマスクとして基板上に無機物を成膜した後、当該
ケイ素系化合物と金属薄膜とからなるパターンを除去し
、無機物薄膜のパターンを形成することを特徴とするリ
フトオフ法によるパターン形成方法。 （２）ケイ素系化合物のパターンは設計線幅通りのパタ
ーンであり、金属パターンは設計線幅より細くなってい
るパターンであること特徴とする請求項１記載のリフト
オフ法によるパターン形成方（３）無機物を成膜する際
の基板加熱温度が１５０℃以上であることを特徴とする
請求項１または２記載のリフトオフ法によるパターン形
成方法。 （４）前記ケイ素系化合物は、好ましくは、ＳｉＯ＿２
であることを特徴とする請求項１乃至３の何れか１項に
記載のリフトオフ法によるパターン形成方法。[Claims] (1) A metal thin film, a silicon-based compound film, and a resist film are formed in this order on a substrate, exposed and developed to form a resist pattern, and a silicon-based compound film is formed by dry etching or wet etching. After forming a pattern and peeling off the resist pattern, wet etching is performed on the metal thin film to form a pattern made of a silicon compound and metal thin film, and using the pattern made of the silicon compound and metal thin film as a mask, an inorganic material is deposited on the substrate. A pattern forming method using a lift-off method, characterized in that after film formation, the pattern made of the silicon-based compound and metal thin film is removed to form a pattern of an inorganic thin film. (2) A pattern forming method using a lift-off method according to claim 1, wherein the silicon-based compound pattern is a pattern with a designed line width, and the metal pattern is a pattern that is narrower than the designed line width. 3. A pattern forming method using a lift-off method according to claim 1, wherein the substrate heating temperature when forming an inorganic film is 150° C. or higher. (4) The silicon-based compound is preferably SiO_2
The pattern forming method using a lift-off method according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23021489A JPH0391928A (en) | 1989-09-04 | 1989-09-04 | Pattern formation by lift-off process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23021489A JPH0391928A (en) | 1989-09-04 | 1989-09-04 | Pattern formation by lift-off process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0391928A true JPH0391928A (en) | 1991-04-17 |
Family
ID=16904354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23021489A Pending JPH0391928A (en) | 1989-09-04 | 1989-09-04 | Pattern formation by lift-off process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0391928A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4589450B1 (en) * | 2009-08-13 | 2010-12-01 | 株式会社ＳＫＬｉｎｋ | Circuit board manufacturing method |
| WO2011019080A1 (en) * | 2009-08-13 | 2011-02-17 | 株式会社ＳＫＬｉｎｋ | Circuit board and method for producing same |
-
1989
- 1989-09-04 JP JP23021489A patent/JPH0391928A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4589450B1 (en) * | 2009-08-13 | 2010-12-01 | 株式会社ＳＫＬｉｎｋ | Circuit board manufacturing method |
| WO2011019080A1 (en) * | 2009-08-13 | 2011-02-17 | 株式会社ＳＫＬｉｎｋ | Circuit board and method for producing same |
| JP2011061183A (en) * | 2009-08-13 | 2011-03-24 | Sk Link:Kk | Method of manufacturing circuit board |
| JP2011061186A (en) * | 2009-08-13 | 2011-03-24 | Sk Link:Kk | Semiconductor device and method of manufacturing the same |
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