JPS59228740A - Heat resistant insulating plate - Google Patents
Heat resistant insulating plateInfo
- Publication number
- JPS59228740A JPS59228740A JP10276083A JP10276083A JPS59228740A JP S59228740 A JPS59228740 A JP S59228740A JP 10276083 A JP10276083 A JP 10276083A JP 10276083 A JP10276083 A JP 10276083A JP S59228740 A JPS59228740 A JP S59228740A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- insulating
- substrate
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulating Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はたとえば大容量半導体素子などによる発熱の
多い電気回路に使用される耐熱性絶縁板に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a heat-resistant insulating plate used in electric circuits that generate a lot of heat, such as those caused by large-capacity semiconductor elements.
たとえばエレクトロニクスの分野では、絶縁基板または
絶縁層を形成した金属基板上に導電層を形成し、この導
電層上に半導体素子などの回路素子を取付けた電子部品
がしばしば用いられる。このような電子部品の基板は、
機械的強度は勿論規定以上の耐電圧を有し、かつ、発熱
の大きい回路素子おるいは高温雰囲気中で使用するとき
には放熱良好な耐熱絶縁基板としなければならない。For example, in the field of electronics, electronic components are often used in which a conductive layer is formed on an insulating substrate or a metal substrate on which an insulating layer is formed, and circuit elements such as semiconductor elements are mounted on the conductive layer. The substrate for such electronic components is
The heat-resistant insulating substrate must have not only mechanical strength but also a withstand voltage higher than the specified value, and good heat dissipation when used as a circuit element that generates a large amount of heat or in a high-temperature atmosphere.
従来、かかる電子部品として、前者については、第１図
に示すようにアルミナセラミック基板（１）を用い、そ
の上にたとえばＡｆ−Ｐｄペーストの如き導電ペースト
からなる導電層（２）を印刷し、回路素子（３）をはん
だ付けしたものが知られている。（４）はそのはんだで
ある。また、後者については、第２図に示すように鉄板
（５）にほうろうかけしたほうろう基板（６）が知られ
ている。この後者の例としては、そのほかに、熱良導体
であるアルミニウム板に熱伝導良好なアルミナをプラズ
マ溶射したもの、アルミニウム板にシん酸塩まだは珪酸
塩をバインダとする無機絶縁層を形成したものが知られ
ている。Conventionally, for the former electronic component, as shown in FIG. 1, an alumina ceramic substrate (1) is used, on which a conductive layer (2) made of a conductive paste such as Af-Pd paste is printed, One in which the circuit element (3) is soldered is known. (4) is the solder. Regarding the latter, as shown in FIG. 2, an enameled substrate (6) made by enameling an iron plate (5) is known. Other examples of the latter include plasma-sprayed alumina, which is a good thermal conductor, on an aluminum plate, which is a good thermal conductor, and aluminum plates with an inorganic insulating layer made of phosphate or silicate as a binder. It has been known.
（１）アルミナセラミック基板（１）を用いたものは機
械強度が弱く破損しやすい。また、コスト高になる欠点
がある。(1) Those using an alumina ceramic substrate (1) have low mechanical strength and are easily damaged. Furthermore, there is a drawback that the cost is high.
（２）はうろう基板（６）は６５０〜８００℃の高温で
焼成するため、一般に鉄板（５）が使用され、熱伝導良
好なアルミニウム板を使用できない欠点がある。(2) Since the floating substrate (6) is fired at a high temperature of 650 to 800°C, an iron plate (5) is generally used, which has the disadvantage that an aluminum plate with good heat conductivity cannot be used.
（３）アルミナをプラズマ溶射した絶縁基板は溶射膜の
密着が弱く剥離しやすい。また、プラズマ溶射がコスト
高となる。(3) Insulating substrates coated with alumina by plasma spraying have weak adhesion and are easily peeled off. Furthermore, plasma spraying is expensive.
（４）シん酸塩、珪酸塩などをバインダとする無機絶縁
層を形成した絶縁基板は耐電圧、絶縁抵抗などの電気特
性が劣る。(4) An insulating substrate formed with an inorganic insulating layer using a binder such as sicrate or silicate has poor electrical properties such as withstand voltage and insulation resistance.
この発明は放熱良好な耐熱絶縁基板を安価に提供するこ
とを目的とする。An object of the present invention is to provide a heat-resistant insulating substrate with good heat dissipation at a low cost.
アルミニウム板上にセラミックスを羽村とし、シん酸塩
をバインダとする第１絶ＫＭを形成し、この第１絶縁層
上にシリコーン樹脂またはポリアミドイミドからなる第
２絶縁層を形成して、熱放散および耐電圧良好な耐熱絶
縁板とした。A first insulating layer made of ceramics and sinate as a binder is formed on an aluminum plate, and a second insulating layer made of silicone resin or polyamide-imide is formed on this first insulating layer to dissipate heat. and a heat-resistant insulating board with good voltage resistance.
実施例
第３図はアルミニウム板（５）上に順次第１絶縁層（１
０，第２絶縁層（ｌｉ）を形成し、この第２絶縁ＭａＤ
上に導電層（２）を形成したのち、回路素子（３）をは
んだ付けしたもので、前記第１図および第２図に示した
電子部品に対応した構造のものであるが、アルミニウム
板（５）に第１．第２絶縁層（１０）（１１）が形成さ
れた絶縁基板（１２１を用いている点が異なる。Embodiment FIG. 3 shows one insulating layer (1
0, a second insulating layer (li) is formed, and this second insulating layer (MaD)
After forming a conductive layer (2) thereon, a circuit element (3) is soldered to it, and the structure corresponds to the electronic component shown in FIGS. 1 and 2. However, an aluminum plate ( 5) First. The difference is that an insulating substrate (121) on which a second insulating layer (10) (11) is formed is used.
上記絶縁基板ａ２）の第１絶縁層００）はアルミナ、シ
リカ、マグネシャ、ベリリア、ジルコニアなどのセラミ
ックス材料を骨材とし、その一種または複数種に９ん酸
塩系バインダを加えて混練した無機塗料を塗布したのち
乾燥、焼成して形成される。The first insulating layer 00) of the insulating substrate a2) is an inorganic paint made of a ceramic material such as alumina, silica, magnesia, beryllia, or zirconia as an aggregate, and one or more of them mixed with a nonaphosphate binder. It is formed by coating, drying, and firing.
この場合、バインダに混練する骨材の粒度としては１〜
３０μｍが適切である。In this case, the particle size of the aggregate mixed into the binder is 1 to 1.
30 μm is suitable.
第２絶縁層（１１）は上記第１絶縁）ｆ４ ＧＯ）形成
後に形成される。この第２絶縁層αυはシリコーン樹脂
捷たはポリアミドイミド樹脂、好ましくはこれら樹脂に
アルミナ、マイカなど無機絶縁物粉末を添加した塗料を
塗布、乾燥、焼成して形成される。A second insulating layer (11) is formed after forming the first insulating layer (f4 GO). The second insulating layer αυ is formed by coating a silicone resin or a polyamide-imide resin, preferably a paint prepared by adding inorganic insulating powder such as alumina or mica to these resins, drying, and baking.
この絶縁基板（１艶の絶縁層の膜厚は第１杷縁層００）
を０．１〜０．１５ ｍｍ 、第２絶縁層圓を０−０５
〜０．１ ｍｍ程度に形成し、２層の合計の厚さを０．
１５〜０．２ｍｍ程度にすることにより十分な電気的特
性をもたすことができる。第１表にアルミニウム板（５
）にスミセラムＳ −２０８Ｄ （住友化学製）を用い
て第１絶縁層００）を形成し、ダイモマッハＳ −２０
０２，Ｋ （）ピーエ業製）を用いて第２絶縁層αυを
形成し、それら膜厚の変化したときの電気特性を第１．
第２絶縁層ｕｔｎ、■単独の場合、および絶縁層をアル
ミナ溶射で形成した従来例と比較して示した。This insulating substrate (the thickness of the insulating layer of 1 gloss is 000 for the first lozenge layer)
0.1~0.15 mm, second insulating layer radius 0-05 mm
~0.1 mm, and the total thickness of the two layers is 0.1 mm.
By setting the thickness to about 15 to 0.2 mm, sufficient electrical characteristics can be obtained. Table 1 shows the aluminum plate (5
), a first insulating layer 00) was formed using Sumiceram S-208D (manufactured by Sumitomo Chemical), and Dymo Mach S-20
02,K (manufactured by PV Industry Co., Ltd.) to form the second insulating layer αυ, and the electrical characteristics when the film thickness was changed were as follows.
A case where the second insulating layer utn, (2) is used alone, and a comparison with a conventional example in which the insulating layer is formed by spraying alumina are shown.
以下、この第１．第２絶縁層α０）、（１１）の形成を
具体例について示す。Below, this first part. A specific example of the formation of the second insulating layers α0) and (11) will be described.
（具体例１）
厚さ０．１５ｍｍのアルミニウム板にシリカ粉末、シん
酸アルミニウムからなるスミ上ラムＳ−２０Ｊｔ−スプ
レーガンにて塗布し、３００℃で３０分焼成し、厚さＱ
、ｌｔｔｒｍの第１絶縁層を形成したのち、合成マイカ
粉末、シリコーン樹脂スからなるダイモマソハＳ−２０
０２Ｋをスプレー塗布し、２００°Ｃ１６０分焼付乾燥
して、厚さＯ，１ｍの第２絶縁層を形成し、耐電圧３０
００Ｖ、 １５０°Ｃ熱板上ツメカー値２０００ＭΩノ
絶縁基板を形成した。また、この絶縁基板に半導体装置
を実装して連続通電した場合の素子湿度上昇はアルミナ
溶射基板と同程度であった。また、絶縁基板をｉｏａで
９０°折曲げた場合の絶縁層の密着性はアルミナ溶射基
板および第１絶縁層を単独に形成した基板に比べてすぐ
れていた。これら特性は無機質の第１絶縁層と有機質の
第２絶縁層を薄層状態で重ねることにより単純に得られ
たもので、第１絶縁層または第２絶縁層の単独では得が
たいものである。(Specific Example 1) Silica powder and aluminum sulfate were coated on an aluminum plate with a thickness of 0.15 mm using a Sumikaram S-20Jt spray gun, and baked at 300°C for 30 minutes to give a thickness of Q.
After forming the first insulating layer of , lttrm, Dymoma Soha S-20 made of synthetic mica powder and silicone resin
02K was spray-coated and baked at 200°C for 160 minutes to form a second insulating layer with a thickness of 0.1 m, and the withstand voltage was 30.
An insulating substrate having a force value of 2000 MΩ was formed on a hot plate at 00V and 150°C. Further, when a semiconductor device was mounted on this insulating substrate and continuously energized, the increase in element humidity was comparable to that of an alumina sprayed substrate. Furthermore, the adhesion of the insulating layer when the insulating substrate was bent at 90° at IOA was superior to that of the alumina sprayed substrate and the substrate on which the first insulating layer was formed alone. These characteristics are obtained simply by laminating the inorganic first insulating layer and the organic second insulating layer in a thin layer state, and are difficult to obtain by using the first insulating layer or the second insulating layer alone.
（具体例２）
厚さ０．１５ｍｍのアルミニウム板にスミセラムＳ−２
ｏｓＭをスプレーガンで塗布し、３００℃で３０分焼成
し厚さ０．１ＦＭｍの第１絶縁層を形成したのち、固形
分３Ｑｗｔ％含むポリアミドイミド樹脂フェスに３μｍ
粒径のアルミナ粉末を５５ｗｔ％混練したペーストをス
クリーン印刷し、２２０℃で１５分焼付乾燥して厚さ０
．１關の第２絶縁層を形成し、具体例１とほぼ同様の結
果を得た。(Specific example 2) Sumiceram S-2 on an aluminum plate with a thickness of 0.15 mm
After applying osM with a spray gun and baking it at 300°C for 30 minutes to form a first insulating layer with a thickness of 0.1FMm, a 3μm thick layer was applied to a polyamide-imide resin face containing 3Qwt% solids.
A paste made by kneading 55 wt% of alumina powder with a particle size was screen printed, baked at 220°C for 15 minutes, and dried to a thickness of 0.
．． One second insulating layer was formed, and almost the same results as in Example 1 were obtained.
（１）無機質または有機質の単独では厚い絶縁層を形成
しないと、所要の電気特性を得ることができないが、無
機質の第１絶縁層と有機質の第２絶縁層とを重ねると、
比較的薄い絶縁層で所要の電気特性を得ることができる
。(1) If an inorganic or organic material is used alone, the required electrical properties cannot be obtained unless a thick insulating layer is formed, but when an inorganic first insulating layer and an organic second insulating layer are stacked,
Required electrical properties can be obtained with a relatively thin insulating layer.
（２）絶縁層が薄いために放熱性、基板に対する脣着性
が良好である。(2) Since the insulating layer is thin, heat dissipation and adhesion to the substrate are good.
第１図および第２図はそれぞれ絶縁基板に回路素子を取
付けた従来の電子部品の図、第３図はこの発明の絶縁基
板に回路素子を取付けた電子部品の図である。
（５）ニアルミニウム板 （２）：導電層（３）二
重路素子 （１０） ：第１絶縁層（１１） ：
第２絶縁層
代理人 弁理士 則 近 憲 佑
（ほか１名）
γ
二ｆ
電 ２ 目
一回て
γ ３ 区
≦工
３
〜４
］
３
４
ヨヨヨ
３
ど−２
會1 and 2 are diagrams of a conventional electronic component in which a circuit element is mounted on an insulating substrate, and FIG. 3 is a diagram of an electronic component in which a circuit element is mounted on an insulating substrate according to the present invention. (5) Nialuminum plate (2): Conductive layer (3) Double path element (10): First insulating layer (11):
2nd Insulating Layer Agent Patent Attorney Nori Kensuke Chika (and 1 other person) γ 2f Den 2 Once in a while γ 3 Ward ≦ Engineering 3 ~ 4] 3 4 Yoyoyo 3 Do-2 Meeting
Claims (1)
骨材とし、ｐん酸塩を結合剤として上記金属基板に密着
形成された第１層と、シリコーン樹脂またはポリアミド
イミド樹脂のいづれかからなる上記第１層上に密着形成
された第２層とを具備することを特徴とする耐熱性絶縁
板。A metal substrate, a first layer formed in close contact with the metal substrate using a heat-resistant insulating ceramic with good heat conduction as an aggregate and a phosphate as a binder, and the above-mentioned layer consisting of either a silicone resin or a polyamide-imide resin. A heat-resistant insulating board comprising a second layer closely formed on the first layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276083A JPS59228740A (en) | 1983-06-10 | 1983-06-10 | Heat resistant insulating plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276083A JPS59228740A (en) | 1983-06-10 | 1983-06-10 | Heat resistant insulating plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59228740A true JPS59228740A (en) | 1984-12-22 |
Family
ID=14336147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10276083A Pending JPS59228740A (en) | 1983-06-10 | 1983-06-10 | Heat resistant insulating plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59228740A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2646018A1 (en) * | 1989-04-12 | 1990-10-19 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| EP1020914A2 (en) * | 1989-10-09 | 2000-07-19 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
-
1983
- 1983-06-10 JP JP10276083A patent/JPS59228740A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2646018A1 (en) * | 1989-04-12 | 1990-10-19 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| EP1020914A2 (en) * | 1989-10-09 | 2000-07-19 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
| EP1020914A3 (en) * | 1989-10-09 | 2000-08-02 | Mitsubishi Materials Corporation | Ceramic substrate used for fabricating electric or electronic circuit |
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