JPS5921082A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS5921082A JPS5921082A JP57131049A JP13104982A JPS5921082A JP S5921082 A JPS5921082 A JP S5921082A JP 57131049 A JP57131049 A JP 57131049A JP 13104982 A JP13104982 A JP 13104982A JP S5921082 A JPS5921082 A JP S5921082A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- sphere
- emitting diode
- junction
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 abstract description 10
- 238000010168 coupling process Methods 0.000 abstract description 10
- 238000005859 coupling reaction Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は半導体発光装置に関し、特に光ファイバー等の
光伝送体との結合効率を改善し得る構造を有する発光ダ
イオードの構造に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor light emitting device, and more particularly to a structure of a light emitting diode having a structure capable of improving coupling efficiency with an optical transmission body such as an optical fiber.
技術の背景
情報の伝送、通信手段の一つとして、光通信が実用化さ
れており、その扱い得る情報量の多さから更に通用範囲
の拡大が図られつつある。Background of the Technology Optical communication has been put into practical use as a means of transmitting and communicating information, and its scope of use is being further expanded due to the large amount of information that it can handle.
従来技術と問題点
かかる光通信においては、信号源（光源）として半導体
レーザ装置或いは発光ダイオード装置が用いられている
。Prior Art and Problems In such optical communications, a semiconductor laser device or a light emitting diode device is used as a signal source (light source).
このうち、発光ダイオード装置は、従来、例えば第１図
に示される素子構造を有している。Among these, a light emitting diode device has conventionally had an element structure shown in FIG. 1, for example.
同図において、１１は例えばＧａＡｌＡｓ層から構成さ
れるキャリア閉じ込め層、１２はＧａＡｓ層から構成さ
れる活性層、１３はＧａＡｌＡｓ層から構成されるウイ
ンド（窓）層である。また１４は例えば二酸化珪素層か
ら構成される絶縁層、１５は例えばチタン（Ｔｉ）から
なるｐ側電極、１６は例えば金（Ａｕ）からなる放熱用
電極、１７はｎ側電極である。In the figure, 11 is a carrier confinement layer made of, for example, a GaAlAs layer, 12 is an active layer made of a GaAs layer, and 13 is a window layer made of a GaAlAs layer. Further, 14 is an insulating layer made of, for example, a silicon dioxide layer, 15 is a p-side electrode made of, for example, titanium (Ti), 16 is a heat dissipation electrode made of, for example, gold (Au), and 17 is an n-side electrode.
そして１８は発光部である。And 18 is a light emitting part.
このような発光ダイオード素子にあっては、各半導体層
がほぼ平行であり、特に前記ウンイド層１３の表面（光
放出面）が平面であるために、前記発光部から放出され
た光Ｌは図示の如く、放射状に散乱してしまう。このた
め該発光ダイオード素子の発光面に対応して配置される
光ファイバー等の光伝送体への光結合効率が低い。In such a light emitting diode element, each semiconductor layer is substantially parallel, and in particular, the surface (light emitting surface) of the wound layer 13 is flat, so that the light L emitted from the light emitting part is not shown in the figure. It is scattered radially like this. Therefore, the efficiency of optical coupling to an optical transmission body such as an optical fiber arranged corresponding to the light emitting surface of the light emitting diode element is low.
このような光放出面に於ける光の散乱の影響を防ぎ、光
伝送体への結合効率を高める手段として、例えば該発光
ダイオード素子の光放出面上に球状或いは半球状のレン
ズ体を配置して、前記光放出面からの光を光伝送体方向
へ集束させることが試みられている。しかしながらこの
ような構成によればかかる発光ダイオード装置の組立工
程の繁雑化を招いてしまう。As a means of preventing the influence of light scattering on the light emitting surface and increasing the coupling efficiency to the light transmitting body, for example, a spherical or hemispherical lens body is arranged on the light emitting surface of the light emitting diode element. Attempts have been made to focus the light from the light emitting surface toward the light transmission body. However, such a configuration causes the assembly process of such a light emitting diode device to become complicated.
このようなレンズ体を使用することなく該発光ダイオー
ド素子と光伝送体との結合効率を高めるために、前記発
光ダイオード素子の光放出面を構成するウインド層半導
体層を半球状に成形してなる発光ダイオード素子が提案
されている。In order to increase the coupling efficiency between the light emitting diode element and the light transmission body without using such a lens body, the window layer semiconductor layer constituting the light emitting surface of the light emitting diode element is formed into a hemispherical shape. Light emitting diode devices have been proposed.
しかしながら、このような発光ダイオード素子構造にあ
っては、前記半球状ウインド層となる半導体層の半径を
十分に小さくするこが困難であり、このため十分に高い
光の集束が行えず、光伝送体への光結合効率を十分に高
めることができない。However, in such a light emitting diode element structure, it is difficult to make the radius of the semiconductor layer that becomes the hemispherical window layer sufficiently small, and for this reason, it is not possible to achieve a sufficiently high focusing of light, and optical transmission is difficult. The efficiency of light coupling to the body cannot be sufficiently increased.
発明の目的
本発明は、このような従来の発光ダイオード素子におけ
る欠点を除去し、光伝送体との結合効率を高めることが
できる発光ダイオード素子を提供しようとするものであ
る。OBJECTS OF THE INVENTION The present invention aims to eliminate the drawbacks of conventional light emitting diode devices and to provide a light emitting diode device that can improve coupling efficiency with an optical transmission body.
発明の構成
このため本発明によれば、ほぼ球状をなす半導体結晶の
一部にｐ−ｎ接合が形成され、該ｐ−ｎ接合とは球の中
心を介してほぼ反対側に位置する球の表面が光放出面と
されてなることを特徴とする半導体発光装置が提供され
る。Structure of the Invention Therefore, according to the present invention, a p-n junction is formed in a part of a substantially spherical semiconductor crystal, and a p-n junction is formed in a part of a sphere located on the opposite side with respect to the center of the sphere. A semiconductor light emitting device is provided, the surface of which is a light emitting surface.
即ち、本発明にあっては、発光ダイオード素子を構成す
る半導体基体自体を球状とし、その一部にｐ−ｎ接合を
形成することにより、該ｐ−ｎ接合から放出される光を
該球状半導体基体のレンズ作用により集束せしめ、光フ
ァイバー等の光伝送体への光結合効率の向上が図られる
。That is, in the present invention, the semiconductor substrate itself constituting the light emitting diode element is made spherical, and a pn junction is formed in a part of the semiconductor substrate, so that light emitted from the pn junction is transferred to the spherical semiconductor. The lens effect of the base material focuses the light and improves the efficiency of optical coupling to an optical transmission body such as an optical fiber.
以下本発明を実施例をもって詳細に説明する。The present invention will be explained in detail below with reference to examples.
発明の実施例
本発明によれば、半導体材料として例えばキャリア濃度
が７×１０１５ｃｍ−３のｎ型ＧａＡｓ単結晶を用い、
これを研磨して例えば直径２００〔μｍ〕の球に加工す
る。Embodiments of the Invention According to the present invention, for example, an n-type GaAs single crystal with a carrier concentration of 7 x 1015 cm-3 is used as a semiconductor material,
This is polished and processed into a sphere with a diameter of 200 [μm], for example.
そして該球の全表面に、絶縁物例えば二酸化珪素（Ｓｉ
Ｏ２）を例えばスパッタリング法によって被着し、その
一部に選択的に開口を形成する。Then, an insulating material such as silicon dioxide (Si) is applied to the entire surface of the sphere.
O2) is deposited by, for example, a sputtering method, and openings are selectively formed in a portion thereof.
次いで該開口を通して亜鉛（Ｚｎ）を例えば深さ５〔μ
ｍ〕程に拡散導入して、該ｎ型ＧａＡｓ球内にｐ−ｎ接
合を形成する。かかる拡散処理は例えば７００（℃）に
おいて行う。Next, zinc (Zn) is deposited through the opening to a depth of 5 μm, for example.
m] to form a pn junction within the n-type GaAs sphere. Such diffusion treatment is performed at, for example, 700 (° C.).
次いで、前記開口部に金−亜鉛からなるｐ側電極を形成
し、更に前記絶縁膜を選択的に除去して後、前記ｎ型Ｇ
ａＡｓ球の表面に金−ゲルマニウム（Ｇｅ）からなるｎ
側電極を形成する。Next, a p-side electrode made of gold-zinc is formed in the opening, and after selectively removing the insulating film, the n-type G
n made of gold-germanium (Ge) on the surface of the aAs sphere
Form a side electrode.
このようにして形成された本発明による発光ダイオード
素子の構造を第２図に示す。The structure of the light emitting diode element according to the present invention thus formed is shown in FIG.
同図において、２１はｎ型ＧａＡｓ球、２２はｐ型領域
、２３はｐ側電極、２４はｎ側電極、２５は絶縁膜であ
る。In the figure, 21 is an n-type GaAs sphere, 22 is a p-type region, 23 is a p-side electrode, 24 is an n-side electrode, and 25 is an insulating film.
かかる構造において、前記ｎ側電極２４は、球状半導体
基体２１の表面において、前記ｐ−ｎ接合部２６を取り
囲む如くリング状に配設される。In this structure, the n-side electrode 24 is arranged in a ring shape on the surface of the spherical semiconductor substrate 21 so as to surround the pn junction 26.
このような構造を有する発光ダイオード素子にあっては
、発光部（ｐ−ｎ接合部）２６か６放射された光Ｌは、
該発光ダイオード素子自体が球体であるために、該球体
から外部へ放出される際に集束される。このため、光伝
送体に対し、前記第１図に示した従来構造に比較して約
２倍の結合効率をもって光を放出し得る。In a light emitting diode element having such a structure, the light L emitted from the light emitting part (p-n junction) 26 or 6 is as follows:
Since the light emitting diode element itself is a sphere, the light is focused when emitted from the sphere to the outside. Therefore, light can be emitted to the optical transmission body with approximately twice the coupling efficiency as compared to the conventional structure shown in FIG. 1.
従って本発明による発光ダイオード素子は光通信用信号
源として極めて有用である。Therefore, the light emitting diode device according to the present invention is extremely useful as a signal source for optical communications.
尚、前記実施例においては、半導体材料としてＧａＡｓ
結晶を掲げて説明したが、本発明はこれに限られるもの
ではなく、ＧａＰ、ＩｎＰ、ＩｎＡｓ、ＩｎＳｂ、Ｈｇ
Ｔｅ、ＣｄＴｅ等の２元化合物半導体、ＧａＡｌＡｓＰ
、ＩｎＧａＡｓ、ＩｎＡｓＳｂ等の３元化合物半導体、
ＩｎＧａＡｓＰなどの４元化合物半導体或いは５元以上
の化合物半導体を適宜選択して適用してもよいことは勿
論である。In the above embodiment, GaAs is used as the semiconductor material.
Although the present invention is explained using crystals, the present invention is not limited thereto, and may include GaP, InP, InAs, InSb, Hg
Binary compound semiconductors such as Te and CdTe, GaAlAsP
, ternary compound semiconductors such as InGaAs and InAsSb,
Of course, a quaternary compound semiconductor such as InGaAsP or a compound semiconductor having five or more elements may be appropriately selected and applied.
また前記本発明の実施例においては、化合物半導体の研
磨により球状半導体基体を形成したが、本発明はこれに
限定されるものではない。例えば半導体基体材料を溶融
し、該溶融体の表面張力を利用して該半導体基体材料の
球状化をなすこともできる。そして、かかる溶融による
球状化処理を無重力状態において実施すれば、重力下に
おける場合よりも、より真の球状に近い形状の半導体基
体を形成することができる。Further, in the embodiments of the present invention, a spherical semiconductor substrate was formed by polishing a compound semiconductor, but the present invention is not limited thereto. For example, it is also possible to melt the semiconductor substrate material and use the surface tension of the melt to make the semiconductor substrate material spheroidal. If such a spheroidization process by melting is performed in a zero gravity state, a semiconductor substrate having a shape closer to a true sphere can be formed than in the case under gravity.
発明の効果
以上のような本発明によれば、発光ダイオード素子と光
ファイバー等の光伝送体との光結合効率を高めることが
でき、光通信等において通信の効率、信頼性等を高める
ことができる。Effects of the Invention According to the present invention as described above, it is possible to increase the optical coupling efficiency between a light emitting diode element and an optical transmission body such as an optical fiber, and it is possible to improve communication efficiency, reliability, etc. in optical communication etc. .
また通常の発光ダイオード装置として用いたときには、
光取り出し効率を高めることができる。Also, when used as a normal light emitting diode device,
Light extraction efficiency can be increased.
第１図は従来の発光ダイオード素子の構造を示す断面図
、第２図は本発明による発光ダイオード素子の構造を示
す一部破断正面図である。
図において、２１・・・・・・・・・ｎ型球状半導体基
体 ２２・・・・・・・・・ｐ型領域
２３・・・・・・・・・ｐ側電極 ２
４・・・・・・・・・ｎ側電極 ２５・・・
・・・・・・絶縁膜 Ｌ・・・・・・・・
・発光光。
代理人 弁理士 松岡宏四郎
宇 ｌ 図
５
第 ２ＮFIG. 1 is a sectional view showing the structure of a conventional light emitting diode element, and FIG. 2 is a partially cutaway front view showing the structure of a light emitting diode element according to the present invention. In the figure, 21......n-type spherical semiconductor substrate 22......p-type region
23...P side electrode 2
4......n-side electrode 25...
・・・・・・Insulating film L・・・・・・・・・
- Luminous light. Agent Patent Attorney Koshiro Matsuoka l Figure 5 No. 2N
Claims (1)
れ、該ｐ−ｎ接合とは球の中心を介してほぼ反対側に位
置する球の表面が光放出面とされてなることを特徴とす
る半導体発光装置。A p-n junction is formed in a part of a nearly spherical semiconductor crystal, and the surface of the sphere, which is located on the opposite side from the p-n junction through the center of the sphere, is used as a light emitting surface. Characteristic semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57131049A JPS5921082A (en) | 1982-07-27 | 1982-07-27 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57131049A JPS5921082A (en) | 1982-07-27 | 1982-07-27 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5921082A true JPS5921082A (en) | 1984-02-02 |
Family
ID=15048813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57131049A Pending JPS5921082A (en) | 1982-07-27 | 1982-07-27 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5921082A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945725A (en) * | 1996-12-04 | 1999-08-31 | Ball Semiconductor, Inc. | Spherical shaped integrated circuit utilizing an inductor |
| US6326647B1 (en) * | 1999-04-01 | 2001-12-04 | Stmicroelectronics, Inc. | Packaging and mounting of spherical semiconductor devices |
| US6498643B1 (en) | 2000-11-13 | 2002-12-24 | Ball Semiconductor, Inc. | Spherical surface inspection system |
-
1982
- 1982-07-27 JP JP57131049A patent/JPS5921082A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945725A (en) * | 1996-12-04 | 1999-08-31 | Ball Semiconductor, Inc. | Spherical shaped integrated circuit utilizing an inductor |
| US5955776A (en) * | 1996-12-04 | 1999-09-21 | Ball Semiconductor, Inc. | Spherical shaped semiconductor integrated circuit |
| US6326647B1 (en) * | 1999-04-01 | 2001-12-04 | Stmicroelectronics, Inc. | Packaging and mounting of spherical semiconductor devices |
| US6498643B1 (en) | 2000-11-13 | 2002-12-24 | Ball Semiconductor, Inc. | Spherical surface inspection system |
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