JPS59200419A - Large area exposure apparatus - Google Patents
Large area exposure apparatusInfo
- Publication number
- JPS59200419A JPS59200419A JP58073817A JP7381783A JPS59200419A JP S59200419 A JPS59200419 A JP S59200419A JP 58073817 A JP58073817 A JP 58073817A JP 7381783 A JP7381783 A JP 7381783A JP S59200419 A JPS59200419 A JP S59200419A
- Authority
- JP
- Japan
- Prior art keywords
- drum
- exposure
- light source
- large area
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、大面積平面液晶ディスプレイ製造工程に必要
な大面積ｇ光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a large-area g-optical device necessary for a large-area flat liquid crystal display manufacturing process.
近年、アモルクラスシリコンＴＰＴ６るいはポリシリコ
ンＴＰＴをスイッチング素子として用いたアクティブマ
トリックス液晶ディスプレイの試作開廃が活発化してい
る。特に、上記半導体薄膜が低温で形成できるため、薄
膜半導体装置を構成するための基板が特に限定されず、
又、従来の露光技術，エツチング技術等のパターン形成
法もそのまま使用出来大面積基板への集積化も可能であ
るなどの利点を有する、しかも低コスト化の可能性が高
いことから薄型，低電圧，低消費電力液晶ディスプレイ
の応用は極めて広くなる。In recent years, active matrix liquid crystal displays using amorphous silicon TPT6 or polysilicon TPT as switching elements have been actively manufactured and discontinued. In particular, since the semiconductor thin film can be formed at a low temperature, the substrate for forming the thin film semiconductor device is not particularly limited.
In addition, it has the advantage of being able to use conventional pattern forming methods such as exposure technology and etching technology, and can be integrated onto large-area substrates.Moreover, it is highly likely to be cost-effective, making it thin and low-voltage. , the applications of low power consumption liquid crystal displays will become extremely wide.
現在ａ−ＳｉＴＦＴ液晶ディスプレイの大きさとして対
角３インチ〜７インチまでのものが試作されている。こ
れらの大きさは露光装置の能力で決められるものである
。Currently, a-Si TFT liquid crystal displays with diagonal sizes ranging from 3 inches to 7 inches are being prototyped. These sizes are determined by the capabilities of the exposure device.
第１図および第２図は従来の露光装置の概略的に示した
図である。これらの図において１は基板、２はホトレジ
スト，３はマスク，４は光源である。これらの露光装置
は結晶Ｓｉ等のプロセス工程を対象にしたものであシ、
Ｓｉウエハーノ大キさが現在２インチ〜５インチ等で套
る為、第１図、第２図の方式で充分満足な露光技術が得
られている。しかしながらアモルファスＴＰＴ液晶ディ
スプレイは基板に安価なガラスを使用する為、さらに大
きなディスプレイが製作可能であるが、第１図の方式で
は５インチ基板以上は不可能である。FIGS. 1 and 2 are diagrams schematically showing a conventional exposure apparatus. In these figures, 1 is a substrate, 2 is a photoresist, 3 is a mask, and 4 is a light source. These exposure devices are intended for process steps such as crystalline Si.
Since the size of Si wafers currently ranges from 2 inches to 5 inches, a fully satisfactory exposure technique has been obtained using the methods shown in FIGS. 1 and 2. However, since amorphous TPT liquid crystal displays use inexpensive glass for their substrates, even larger displays can be manufactured, but with the method shown in FIG. 1, it is not possible to manufacture substrates of 5 inches or more.
又、第２図の方式では露光むら等が生じて満足な露光条
件が得られない大きな問題がある。Further, the method shown in FIG. 2 has a major problem in that exposure unevenness occurs and satisfactory exposure conditions cannot be obtained.
従来の露光装置では出来ない、大面積基板の露光を可能
にし、かつ露光むらのない露光を目的とする大面積露光
装置を提供することにおる。It is an object of the present invention to provide a large-area exposure apparatus that enables exposure of large-area substrates, which cannot be done with conventional exposure apparatuses, and that aims at exposure without uneven exposure.
本発明においては、従来方式の露光装置とはまったく異
なり光源とホトマスクが円筒形ドラムと一体となシ同−
回転、前進機構を持ち、レジスト表面を露光する。In the present invention, the light source and photomask are integrated into a cylindrical drum, which is completely different from conventional exposure equipment.
It has a rotating and advancing mechanism and exposes the resist surface.
本発明によれは、円筒形ドラムを交換することにより、
ドラムの円周と同等の大きさの基板を露光する事が出来
、Ａ４サイズの大きさも充分可能でアシ、かつ露光むら
のないパターニングが得られる。According to the invention, by exchanging the cylindrical drum,
It is possible to expose a substrate of the same size as the circumference of the drum, and it is possible to fully expose a substrate of A4 size, and patterning with no reeds and uneven exposure can be obtained.
以下に本発明の具体的な実施例を説明する。 Specific examples of the present invention will be described below.
第３図は本発明の露光装置の概略１図である。まず試作
した露光装置を説明する。まず透明円筒ドラムロ、は石
英管両面ポリッシュしたもので外径８０Ｍ、肉厚３ｍｍ
、長さ２００ｍｍの円筒物を作り、次に石英ドラムの内
側に熱反射膜（ＩｎｚＯａ 、８ｎＯｚ）８、を１００
ＯＡコーテイングし、ドラム両端に回転支持用ガイド１
３を作シ、ドラム外周にフィルムマスク３、長さ２１０
ｍ、巾１−５０ｍｍのものを密着よく巻きつけマスク一
端を固定し、ドラム内に高圧水銀燈光源（５００Ｗ）４
をセットし、ドラム両端を不透明円板でフタをし、ドラ
ム支持ノ（−１１にセットし、さらに光防止カバー７を
支持バー１１と、１２．１２’で固定し、回転支持ガイ
ド１３と回転モーター１４と直結する。なお、このドラ
ム外径８０鵬を用いると円周２５０ｍｍとなり、２５０
Ｘ２００ｍｍ程度の基板でおれば充分露光可能である。FIG. 3 is a schematic diagram of an exposure apparatus of the present invention. First, a prototype exposure device will be explained. First, the transparent cylindrical drum is a quartz tube polished on both sides, with an outer diameter of 80M and a wall thickness of 3mm.
, a cylindrical object with a length of 200 mm was made, and then a heat reflective film (InzOa, 8 nOz) 8, 100 mm was coated on the inside of the quartz drum.
OA coated, rotation support guide 1 on both ends of the drum
3, film mask 3 on the outer periphery of the drum, length 210
Wrap a mask with a width of 1-50mm tightly and fix one end of the mask, and place a high-pressure mercury lamp light source (500W) 4 in the drum.
, cover both ends of the drum with opaque discs, set the drum support hole (-11), fix the light prevention cover 7 with the support bar 11 and 12.12', and rotate it with the rotation support guide 13. It is directly connected to the motor 14.If this drum outer diameter is 80mm, the circumference will be 250mm,
A substrate with a size of about 200 mm can be sufficiently exposed.
上記装置を使用して、ガラス基板１．２１０Ｘ１５０
Ｘ Ｏ，２ｍｍｔの大きさの上にＡ）、５を２００ＯＡ
蒸着し、さらにネガレジスト２を塗布し、ドラムをスタ
ート・マークにセットし、２１ｍｍ／ｍｉｎの早さで回
転モーターでスキャンをした。露光された基板を現像１
分、３０秒、リンス１分、ディプででレジストが切れた
。又回転モーターでスキャン速度を変える事でさらに量
的露光条件を求める事も出来た。又面内分布も少く、本
発明露光装置を用いる事によシ大面積基板の露光が可能
となった。Using the above equipment, glass substrate 1.210X150
A), 5 on the size of X O, 2mmt 200OA
After vapor deposition, Negative Resist 2 was further applied, the drum was set at the start mark, and scanning was performed with a rotating motor at a speed of 21 mm/min. Develop the exposed substrate 1
After 30 seconds, rinsing for 1 minute, and dipping, the resist was removed. Furthermore, by changing the scanning speed using a rotating motor, it was also possible to obtain even more quantitative exposure conditions. In addition, the in-plane distribution is small, and by using the exposure apparatus of the present invention, it is possible to expose a large area substrate.
以上のように本発明露光装置を用いる事によシ、大面積
基板の露光が可能となシ、露光条件も簡単に求められ、
面内露光むらも少く、平面液晶ディスプレイ製作露光工
程には最適でおる。As described above, by using the exposure apparatus of the present invention, it is possible to expose large area substrates, and the exposure conditions can be easily determined.
There is little in-plane exposure unevenness, making it ideal for the exposure process for manufacturing flat liquid crystal displays.
、本発明は上記実施例平面ディスプレイに限定されず、
大形サーマルヘッド、密着センサー等の大面積パターン
にも最適である。, the present invention is not limited to the flat display of the above embodiment,
It is also ideal for large area patterns such as large thermal heads and contact sensors.
第１図および第２図は従来構造の露光装置の断面図、第
３図は本発明大面積露光装置の断面図である。
図において、
１・・・透明ガラス基板 １／・・・ステージ、２・・
・レジスト、３・・・フィルムマスク、４・・・光源（
高圧水銀燈）、５・・・ＡＪ１６・・・透明石英ドラム
、７・・・光防止板、８・・・熱反射膜（Ｉｎ ２０３
、５ｎＯｚ） 、９−真空チャックライン、１０・・
・基板ステージ、１１・・・ドラム支持バー、１２．１
２’・・・光防止板支持治具、１３・・・ドラム回転支
持用ガイド、１４・・・回転モーター。1 and 2 are cross-sectional views of an exposure apparatus having a conventional structure, and FIG. 3 is a cross-sectional view of a large-area exposure apparatus of the present invention. In the figure, 1...Transparent glass substrate 1/...Stage, 2...
・Resist, 3... Film mask, 4... Light source (
High pressure mercury lamp), 5... AJ16... Transparent quartz drum, 7... Light prevention plate, 8... Heat reflective film (In 203
, 5nOz), 9-Vacuum chuck line, 10...
・Substrate stage, 11...Drum support bar, 12.1
2'...Light prevention plate support jig, 13...Drum rotation support guide, 14...Rotation motor.
Claims (2)
側で一体とな９同一回転、前進機構を行い露光する事ｔ
−特徴とする大面積露光装置。(1) The light source and photomask are integrally rotated at the same time on the inside and outside of the transparent cylindrical drum, and the advancing mechanism is used for exposure.
-Characteristic large area exposure equipment.
明導電膜（Ｉｎ２ｏ３．Ｓｎｏｗ）をコーティングした
事を特徴とする特許 の大面積露光装置。 （３》ノーコンタクト方式，コンタクト方式の安定した
ギャップ設定機構を持つ事ｔ−特徴とする前記特許請求
の範囲第１項記載の大面積露光装置。(2) A patented large-area exposure device characterized by coating the inside of the cylindrical drum on the light source side with a transparent conductive film (In2o3.Snow) as a heat-reflecting material. (3) The large area exposure apparatus according to claim 1, characterized in that it has a stable gap setting mechanism of a no-contact type or a contact type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073817A JPS59200419A (en) | 1983-04-28 | 1983-04-28 | Large area exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073817A JPS59200419A (en) | 1983-04-28 | 1983-04-28 | Large area exposure apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59200419A true JPS59200419A (en) | 1984-11-13 |
Family
ID=13529083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58073817A Pending JPS59200419A (en) | 1983-04-28 | 1983-04-28 | Large area exposure apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200419A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012032837A (en) * | 2006-09-08 | 2012-02-16 | Nikon Corp | Mask, exposure apparatus and device manufacturing method |
| US8182982B2 (en) | 2008-04-19 | 2012-05-22 | Rolith Inc | Method and device for patterning a disk |
| US8192920B2 (en) | 2008-04-26 | 2012-06-05 | Rolith Inc. | Lithography method |
| WO2013049367A2 (en) * | 2011-09-30 | 2013-04-04 | Rolith, Inc. | Plasmonic lithography using phase mask |
| US8425789B2 (en) | 2007-06-09 | 2013-04-23 | Rolith, Inc. | Method and apparatus for anisotropic etching |
| US8518633B2 (en) | 2008-01-22 | 2013-08-27 | Rolith Inc. | Large area nanopatterning method and apparatus |
| US20150064628A1 (en) * | 2012-04-17 | 2015-03-05 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
| US9069244B2 (en) | 2010-08-23 | 2015-06-30 | Rolith, Inc. | Mask for near-field lithography and fabrication the same |
| CN105171985A (en) * | 2008-01-22 | 2015-12-23 | 罗利诗公司 | Large area nanopatterning method and apparatus |
| US9465296B2 (en) | 2010-01-12 | 2016-10-11 | Rolith, Inc. | Nanopatterning method and apparatus |
| JP2017045067A (en) * | 2012-03-27 | 2017-03-02 | 株式会社ニコン | Mask mounting device and exposure device |
| JP2017090935A (en) * | 2012-03-15 | 2017-05-25 | 株式会社ニコン | Substrate processing apparatus and substrate processing method |
-
1983
- 1983-04-28 JP JP58073817A patent/JPS59200419A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012032837A (en) * | 2006-09-08 | 2012-02-16 | Nikon Corp | Mask, exposure apparatus and device manufacturing method |
| US8425789B2 (en) | 2007-06-09 | 2013-04-23 | Rolith, Inc. | Method and apparatus for anisotropic etching |
| CN105171985A (en) * | 2008-01-22 | 2015-12-23 | 罗利诗公司 | Large area nanopatterning method and apparatus |
| US8518633B2 (en) | 2008-01-22 | 2013-08-27 | Rolith Inc. | Large area nanopatterning method and apparatus |
| US9645504B2 (en) | 2008-01-22 | 2017-05-09 | Metamaterial Technologies Usa, Inc. | Large area nanopatterning method and apparatus |
| US8182982B2 (en) | 2008-04-19 | 2012-05-22 | Rolith Inc | Method and device for patterning a disk |
| US8192920B2 (en) | 2008-04-26 | 2012-06-05 | Rolith Inc. | Lithography method |
| US9465296B2 (en) | 2010-01-12 | 2016-10-11 | Rolith, Inc. | Nanopatterning method and apparatus |
| US9069244B2 (en) | 2010-08-23 | 2015-06-30 | Rolith, Inc. | Mask for near-field lithography and fabrication the same |
| WO2013049367A2 (en) * | 2011-09-30 | 2013-04-04 | Rolith, Inc. | Plasmonic lithography using phase mask |
| WO2013049367A3 (en) * | 2011-09-30 | 2013-05-23 | Rolith, Inc. | Plasmonic lithography using phase mask |
| JP2017090935A (en) * | 2012-03-15 | 2017-05-25 | 株式会社ニコン | Substrate processing apparatus and substrate processing method |
| JP2017045067A (en) * | 2012-03-27 | 2017-03-02 | 株式会社ニコン | Mask mounting device and exposure device |
| US20150064628A1 (en) * | 2012-04-17 | 2015-03-05 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
| US9720330B2 (en) * | 2012-04-17 | 2017-08-01 | The Regents Of The University Of Michigan | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography |
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