JPS59193782A - Laser working machine - Google Patents
Laser working machineInfo
- Publication number
- JPS59193782A JPS59193782A JP58067972A JP6797283A JPS59193782A JP S59193782 A JPS59193782 A JP S59193782A JP 58067972 A JP58067972 A JP 58067972A JP 6797283 A JP6797283 A JP 6797283A JP S59193782 A JPS59193782 A JP S59193782A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- mirror
- laser
- beams
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003754 machining Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 235000000396 iron Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 244000055346 Paulownia Species 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 206010007134 Candida infections Diseases 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 244000000231 Sesamum indicum Species 0.000 description 1
- 235000003434 Sesamum indicum Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は１本のレーザ光を複数のレーザ光に分割し、
レーザスクライブ（以下１、Ｓという）の実効的な走査
速度（スキャンスピード、以下ＳＳとい・う）を速くせ
しめることを特徴としている。[Detailed Description of the Invention] This invention divides one laser beam into multiple laser beams,
It is characterized by increasing the effective scanning speed (scan speed, hereinafter referred to as SS) of the laser scribe (hereinafter referred to as 1, S).
本発明は語根の被加工面をＸまたはＹ方向に移動さゼる
のではなく、力ＩＬ■するレーザ光をＸおよびＹ方向に
移動させることにより被加工面に所定の開溝を形成させ
るレーザ加工機に関する。The present invention does not move the surface to be machined in the X or Y direction, but instead moves the laser beam that applies force IL in the X and Y directions, thereby forming a predetermined groove on the surface to be machined. Regarding processing machines.
この発明は、絶縁基板上に第１の導電性被１殴よりなる
第１の電極、非単結晶半導体被膜さらにこの上面に第２
の導電性被膜よりなる第２の電極を積層して形成する光
電変換装置に関−３るものである。This invention includes a first electrode made of a first conductive coating on an insulating substrate, a non-single crystal semiconductor coating, and a second electrode on the upper surface of the non-single crystal semiconductor coating.
The present invention relates to a photoelectric conversion device formed by laminating a second electrode made of a conductive film.
（２）
第１の導電性被膜を第１のレーデスクライブ（以下ＬＳ
という）加工によりノリ「定の形状に第１の開溝を形成
してパターニングをし、さらにこの土面に半導体被膜を
形成して、この第」の開溝を基準としてそれと従属の形
状の第２の開溝を半導体に設けたものである。(2) The first conductive film is coated with a first laser knife (hereinafter referred to as LS
A first groove is formed in a predetermined shape by patterning, a semiconductor film is formed on this soil surface, and a first groove in a subordinate shape is formed using this first groove as a reference. 2 open grooves are provided in the semiconductor.
さらにこの第２の開溝を形成した後、第２の導電性被１
模を半導体上に形成し、第１または第２の開溝を基（１
へとしてこの第２の導電性被膜に従属関係のバタ−−ン
を有して第３の開溝を形成−Ｕんとするものである。Furthermore, after forming this second open groove, a second conductive coating 1 is formed.
A pattern is formed on the semiconductor, and the first or second groove is formed as a base (1
Then, a third open groove is formed with a pattern in a subordinate relationship to the second conductive coating.
即ち、本発明はレーザ加２］二においＣ少な（とも２つ
の工程で実施されるレーザ加工をまったく独立（無関係
）にパターニングを施すのではなく、第１の開溝と従属
関係を有して第２、第３の開溝を人間による制御を行う
のではなく、コンピュータにプログラムされたパターン
により実行することにより、自動的に位置合わせ（コン
ピュータ・コンドロールド・セルフ・レジストレイジョ
ン）をして作製することを目的とＵ７ている。That is, the present invention does not perform patterning completely independently (unrelated) of laser machining, which is performed in two steps, but has a subordinate relationship with the first open groove. Manufactured by automatically aligning the second and third grooves using computer-programmed patterns (computer-controlled self-registration) rather than using human control. The purpose of the U7 is to
（３）
従来、レーザ加−１−力式においては、１つの開溝また
はパターンを被加工面に施−４ごｋかｆ＋イ′月ｔでい
た。しかし複数のパターンを巾合わ一部て積；Ｃツ形成
するというごとはまっノこく行われていなか−、ノこ。(3) Conventionally, in the laser application method, one open groove or pattern was applied to the workpiece surface in 4 steps or 4 steps. However, the process of stacking multiple patterns together to form a C-shaped pattern is not always practiced.
さらに従来において、ＬＳのＳＳは］Ｏｌ、、ｍ／分〜
１０ＩＩｌ／分である。しかしこのＬＳかされる１４料
の最通スピードが０．５〜１ｍ／分である時、１つのレ
−ザヒーー〜ム発振機より１／２の分周機により２光路
とする方式を３〜４段行うことにより８〜１６本のレー
ザ光に分割し、実質的にそのＳＳを（０，５〜ｌ ＋ｌ
＋ ／分）Ｘ’（８〜１Ｇ）であり、４ｍ 〜ＩＧｍ
／分周することがてき、実効性においてきわめて優れ
たものである。Furthermore, conventionally, the SS of the LS is ]Ol,, m/min ~
10 II/min. However, when the maximum passing speed of the 14-wavelength beam generated by the LS is 0.5 to 1 m/min, the method of creating two optical paths using a 1/2 frequency divider from one laser beam oscillator is 3 to 1 m/min. The laser beam is divided into 8 to 16 laser beams by performing the process in 4 stages, and the SS is essentially (0,5 to l + l
+/min)X'(8~1G), and 4m~IGm
/ frequency division, and is extremely effective.
本発明はこの一定の複数の開講を作る処理を二Ｊンピュ
ータに予めプ［：２グラムするごとにより、複数の開講
の位置、形状が無秩序にはらつい−（、ずれが起きるこ
とな（高ｍ度で作製することを目的としている。The present invention is designed to prevent the positions and shapes of the plurality of lectures from randomly varying by pre-printing the process of creating a certain number of lectures on a 2J computer. It is intended to be manufactured at a
４−発明はこのため、第２または第３の開溝を形成する
工程中に、第１の開への少なくとも１つを光学的に検知
しつつ行うごとにより、さらＱこ複数（４）
のレーザ光のそれぞれの開溝の位置（座標）の精度を所
定の位置に対して１２（ｐ以内好ましくは±Ｖ以内に向
上さゼることを目的とする。4-For this reason, the invention further improves the number of Q (4) by optically detecting at least one opening to the first opening during the process of forming the second or third opening groove. The purpose is to improve the accuracy of the position (coordinates) of each groove of the laser beam to a predetermined position by 12 (p or less, preferably ±V or less).
以下に図面に従って本発明の詳細な説明Ｊ−る。A detailed description of the invention follows below with reference to the drawings.
第１図は本発明のレーザ加」二処理力式によるブロック
図である。FIG. 1 is a block diagram of a laser processing system according to the present invention.
図面において、レーザ加工機（５０）はレーザ発振機（
２１）コリオメーク （２２） 、ミラー（４２）、分
周機（４３） 、ミラー（４１） 、ミラー制御系（２
９）等よりなっている。レーザ発振機（２１）は１．０
６の波長を発光するＹＡＧレーデ（周６！ｉ数１〜３０
１釦２゜ビーム系１０〜８９）例えば５ヅφ、出力０．
１〜８１，１例えば被加工面圧力０．５Ｗ）を用いた。In the drawing, the laser processing machine (50) is a laser oscillator (
21) Coriomake (22), mirror (42), frequency divider (43), mirror (41), mirror control system (2)
9) etc. Laser oscillator (21) is 1.0
YAG radar that emits 6 wavelengths (period 6! i number 1 to 30
1 button 2° beam system 10-89) For example, 5゜φ, output 0.
1 to 81.1 (for example, a workpiece surface pressure of 0.5 W) was used.
レーザ光はコリオメーク（２２）を経て、ミラー（４２
）に至る。The laser beam passes through the Coriomake (22) and then passes through the mirror (42).
).
さらにハーフミラ−を３〜／１段経てレーザ光を分割す
る手段を有し、その結果レーザ光はく４０）（４ｄ）（
４ｄ′）・・・・と複数本ごこては８または１６本例え
ば８本に分割せしめた。さらにこのレーザ光（以下（４
０）によって代表させる）はミラー（選択反射金属）（
２３）より下方に投光させた。Furthermore, it has a means for splitting the laser beam through 3 to 1 stages of half mirrors, and as a result, the laser beam is divided 40) (4d) (
4d')... The plural irons were divided into 8 or 16 irons, for example, 8 irons. Furthermore, this laser light (hereinafter (4)
0) is a mirror (selective reflection metal) (
23) Light was projected further downward.
（５）
基板は相ス・１面を一定の間隙例えは５・〜８ ｃ ｎ
＋を（−＋して平行に配設さ−μだ。(5) The substrate has a constant gap between one side and the other, for example, 5 to 8 c n
+ is (-+ and is placed parallel to -μ.
この間隙内にレーザ光（４０）が導入さ４しる。さらに
このＩ／−ザ光はミラ−（例えばプリスム型ミラー）
（４１）により左方向に９σ反射さゼ、基板（１）上
の被加工面（５）に至り開溝を１７１製した。A laser beam (40) is introduced into this gap. Furthermore, this I/-the light is a mirror (for example, a prism type mirror)
(41), 9σ reflection was carried out to the left, and 171 open grooves were formed reaching the processed surface (5) on the substrate (1).
他方、光学的位置検出糸（５１）はシンブ（２４）より
ハーフミラ−（２３） （２５）をへて被加工面ン
（５）に至り、反射光かミラー−（２５）を通過して検
知器（２６）に至る。この検知器（２１）では破卵」−
面での開溝（１８）の位置情）・ｌを検出し、二ｌンピ
人−り（２７）に人力される。On the other hand, the optical position detection thread (51) passes through the half mirrors (23) and (25) from the thin plate (24) to the workpiece surface (5), and the reflected light passes through the mirror (25) and is detected. This leads to the vessel (26). This detector (21) shows that the egg is broken.''
The position information of the open groove (18) on the surface is detected, and the position information of the groove (18) on the surface is detected, and the position information is manually applied to the two positions (27).
このコンピュータ（２７）にはメモリ （２１） ’こ
゛Ｃ第２の開溝（１９）の相幻的な位置がゾロクシ広さ
れているため、これと第１の加工部の開溝（ｌ ｉｌ
）の位置とを１１合わせて第２の開溝の位置、パターン
をレーザ加工Ｉａ（５０）の発振機（２１）に入力さゼ
る。同時にこのコンピュータの出力を２−ノの；制御系
（２９） （４９）に入力さ−ｌる。ごのミラーを゛
〆力方向移動させる制御系にＪり図面ではＹ力量へ（６
）
の移動をセしめる。分周機（４３）の制御系（４９）に
よりＸ方向の位置を第１の開溝（１８）を基準として決
定する。In this computer (27), the memory (21) 'C is widened in the relative position of the second opening groove (19).
) and input the position and pattern of the second open groove into the oscillator (21) of the laser processing Ia (50). At the same time, the output of this computer is input to the control system (29) (49) of 2-. In the drawing, the control system moves the mirror in the direction of force (6).
) is set for movement. The control system (49) of the frequency divider (43) determines the position in the X direction with the first open groove (18) as a reference.
かくしてごの分周器により複数のレーーザ光のＸ方向の
座標を決定した後、レーザ加工機（２１）は第１の開溝
（１８）より所定の距離ノン１〜し他の位置（座標）に
第２の開溝（１９）を形成−μしめた。After determining the X-direction coordinates of the plurality of laser beams using the frequency divider, the laser processing machine (21) moves from the first groove (18) to a predetermined distance from No. 1 to another position (coordinates). A second open groove (19) was formed at -μ.
この時この第２の開溝はレ−ヂ光の（４０）、 （４０
）・・・の数だけ同時に形成さ−Ｕだ。At this time, this second open groove is (40), (40
)... are formed at the same time -U.
その結果１つのＬＳのＳＳは１ｍ／分であっても、実質
的に８本分割においては８ｍ／分のスピードを７．Ｈる
ことかでき、生産性を８倍にまで向上さ−υることが可
能となった。As a result, even if the SS of one LS is 1 m/min, the speed of 8 m/min in 8 lines is essentially 7.5 m/min. It has become possible to improve productivity by up to 8 times.
さらにこの開溝（１９）が形成されてしま−２た後、ミ
ラー（４１）を（４１ゝ）と逆向きに９０°回４リニさ
一部ることにより、レーデ光は相対した他の基板（１）
の被加工面（５）に対してレーザ加Ｊ二を施すことかで
きた。Furthermore, after this opening groove (19) is formed, the mirror (41) is rotated 90 degrees four times in the opposite direction to (41), so that the radar light is transmitted to the opposite substrate. (1)
It was possible to perform laser machining on the processed surface (5).
図面において、左側の基板に対し、」ニガより下方向に
開溝を作製している面倒の基板に対しては、（７）
下部より上方向に開溝を作ゲごいくことにより、レーデ
光の移動に関する喪失時間を最小にすることができた。In the drawing, for the board on the left, it is difficult to create grooves downward from the bottom. It was possible to minimize the lost time related to the movement of
このレーザ加工機において、第１の開、ｊ）−の位ｉ６
゜（１：！−標）をたえづ′検知−３−ることかできる
ため、この第１の開溝（１８）の位置を検知し“つ−、
ノ第２の開溝（１９）の作製を高１’？ｊ度の形状に実
施」°るこ上か「ＩＪ能となった。In this laser processing machine, the first opening, j)-position i6
゜(1:!-mark) can be continuously detected, so the position of this first open groove (18) can be detected and
The second open groove (19) is made with a height of 1'? It was implemented in the shape of the J degree.
さらにこの基準となるモニター−は分割したレーーーザ
光のいずれか１つをマスク−として決定すればよく、そ
の場合は分周器（４３）において、レー男５＜４ｏ）＜
４６＞ ・・・のそれぞれのその位置の１１゛１度】
が設は位置にグーＬＬ９１以内好ましくはＶツ、内の４
１１１度にて規定することはきわめ゛（ｉｌｊ要である
。Furthermore, the monitor that serves as this reference only needs to be determined using one of the divided laser beams as a mask. In that case, in the frequency divider (43),
46> 11゛1 degree] of each of its positions is set at the position within LL91, preferably within 4 of V
It is extremely important to specify at 111 degrees.
第２の図は本発明方式を用いた光電変脱装置の縦断面図
を示す。The second figure shows a longitudinal sectional view of a photoelectric conversion device using the method of the present invention.
図面に従ってさらに本発明の内容を示す。The content of the present invention will be further illustrated according to the drawings.
第２図において、（Δ）は例えば２０ｃｍＸ巨Ｊａｍの
大きさを有する絶縁基板（１）である。ここでユ、１ガ
ラス基板を用いた。In FIG. 2, (Δ) is an insulating substrate (1) having a size of, for example, 20 cm x Giant Jam. Here, a glass substrate was used.
（８） さらにごの上面に被加工面（５）が形成されている。(8) Furthermore, a processed surface (5) is formed on the upper surface of the cage.
この加工面（５）（こばレーザ加工により開溝（１２）
が設りられている。This machined surface (5) (groove (12) opened by Koba laser processing)
is set up.
この第２図（Ａ）の一部を拡大し、その縦断面図を第２
図（Ｂ）に示す。A part of this Figure 2 (A) is enlarged and its longitudinal cross-sectional view is shown in the second figure.
Shown in Figure (B).
図面において、基板（１）は２ｎｕｎ ｌツのガラスを
用いた場合である。さらにこの上面に第１の２＃、電性
被１１Ｑ（２）をＩＴＯ（酸化インジノ、−ムスス）を
５００〜１ｓｏｏＲとＳｎＯ，（２００〜４００Ａ）の
２１＃ ＩＩｒＡとして透光性を有して設けている。In the drawing, the substrate (1) is made of 2 nanometers of glass. Further, on this upper surface, a first 2#, conductive coating 11Q (2) is made of ITO (indino oxide, -mussus) with 500 to 1 sooR and SnO, 21# IIrA of (200 to 400 A) to have translucency. It is set up.
これに対し、第１の開溝（１８）をＬＳにより形成し、
第１の導電膜を複数のパターン（ここでは第２図（Ａ）
に示すことき短冊状）に電気的に分割している。このＬ
Ｓによりガラス基４反の一部が７容去して凹部（６０）
を作ってしまった。On the other hand, the first open groove (18) is formed by LS,
The first conductive film is formed into a plurality of patterns (here, as shown in FIG. 2(A)).
It is electrically divided into strips (as shown in Figure 1). This L
Due to S, 7 parts of the 4 glass bases are removed to create a recess (60).
I made it.
さらにこの第１の開溝を形成した後、この」二面に非単
結晶半導体を門Ｎ接合を少なくとも１つ自して積層した
。Furthermore, after forming this first groove, at least one gate-N junction was laminated with a non-single crystal semiconductor on these two surfaces.
図面でばＩ）型Ｓｉｘ叩、（ｘ −０，８） （２）
（約１００λ）（９）
−■型Ｓｉへ （約０．５７Ａ） （３） −Ｎ型微
結晶化Ｓｉ（約２０〇八） （１４）よりなる１一つ
の門Ｎ接合を￥ｊする半導体（３）をプラズマＣＶＤ法
、フメトＣＶ Ｄ 跋またはフォトプラズマＣｖＤ法に
より形成して、被加工面（５）が形成された。In the drawing, I) Type Six, (x -0,8) (2)
(approximately 100λ) (9) - To ■ type Si (approximately 0.57A) (3) -N type microcrystalline Si (approximately 2008) (14) Semiconductor with 11 gate N junctions consisting of (14) (3) was formed by a plasma CVD method, a fumet CVD method, or a photoplasma CVD method to form a processed surface (5).
この後、この半導体（３）を第１の開溝（１８）を基準
としてわたり深さを１０〜２０ｖ例えば７（ソ、（図面
において左側）シフ１さ−Ｕて第２の開講（１９）を形
成した。このシフＩ・Ｖは予め第１図Ｑにおいてメモリ
（２８）にプログラムさ−Ｕておいた。After this, cross this semiconductor (3) with respect to the first groove (18) to a depth of 10 to 20V, for example, 7 (left side in the drawing) and open the second groove (19). This Schiff IV was previously programmed into the memory (28) in FIG. 1Q.
このため、第１の開溝の座標を光学系によりモニタしつ
つ、それと平行に第２の開溝（１９）を形成することが
できた。図面ではこの第２の開溝ム五半導体（３）およ
びその下の第１の導電性（２ンをもレーザスクライブを
し−Ｃ除去さ−ＩＬ）ご。For this reason, it was possible to form the second open groove (19) parallel to the coordinates of the first open groove while monitoring them using the optical system. In the drawing, this second open groove semiconductor (3) and the first conductive layer (2) below it are also laser scribed and removed.
さらに図面においては、この」−面全面乙こ第２ ＋２
）導電膜（４）を形成さセた。ここではｌＴｏ （１
５）を５０〜１５００Δ例えば１０５０／ｌの厚さに、
さ鴫こその上面に反射性金属（１６）を３００〜５００
０λ例えば１０００Ａの厚さに真空蒸着法、ＣＶＩ）法
により形成さく１０）
せた。Furthermore, in the drawing, this "- side entire Otsuko No. 2 +2
) A conductive film (4) was formed. Here lTo (1
5) to a thickness of 50 to 1500Δ, for example 1050/l,
300-500 pieces of reflective metal (16) on the top of Sahizuka
It is formed by a vacuum evaporation method (CVI) method to a thickness of 0λ, for example, 1000A10).
次ぎにこの第２の導電膜に対し、第１の開溝を基準とし
てさらにわたり深さ２０〜２０ノ例えば７ノ左側にシフ
トして第３の開溝を第１図のレーザ加工装置により形成
さ−已だ。この第３の開溝（２０）は第２の導電１１ｋ
ｌ’ （４）のみからなるその下の半導体（３）をも除
去（１０）さ・Ｕてしまった。Next, a third groove is formed in the second conductive film by using the laser processing apparatus shown in FIG. 1, further extending from the first groove to a depth of 20 to 20 mm, for example, shifted to the left by 7 mm. That's it. This third open groove (20) is connected to the second conductor 11k.
The underlying semiconductor (3) consisting only of l' (4) was also removed (10).
図面において、かくしてガラス基板（１）状に複数の光
電変換累ｆ−（３１）、 （３２）が形成され、さらに
それらは開溝（１８）、 （Ｊ、９）、 （２０）よ
りなる連結部（１２）において電気的に直列に連結さ−
已ることが可能となった。In the drawing, a plurality of photoelectric conversion layers f-(31), (32) are thus formed on the glass substrate (1), and these are further connected by open grooves (18), (J, 9), (20). electrically connected in series at the section (12).
It became possible to cross.
このような大面積に設けられた異なる桐材を、それぞれ
の桐材を前の祠料と特定の関係（ここでは直列構造）を
有して形成させようとする場合、本発明のセルフ・レジ
ストレイジョン機のレーザ加工力式はきわめて￥１リノ
であることが判明した。When it is desired to form different paulownia materials over such a large area with each paulownia material having a specific relationship (in this case, a series structure) with the previous material, the self-resist of the present invention can be used. It turns out that the laser processing power type of the Raysion machine is extremely cheap.
本発明において、第２図の光電変換装置において、２０
ｃｍ Ｘ ６０ｃ＋ｎの基板の大きさに対し、１つの素
７− （３１）、 （３２）が１５ｍｍ Ｘ ２０ｃｍ
とし、それらを同一（１１）
基板状に４０段直列接続をさ−Ｕる場合、酎１ （１
０（１１ｒＷ／ｃｍ”）の条件下にて開放電圧２８シ、
ハｉ絡電流３３００ｍ八を有することができ、変換効率
７．５％を自することが可能となった。In the present invention, in the photoelectric conversion device shown in FIG.
For the substrate size of cm x 60c+n, one element 7- (31), (32) is 15mm x 20cm
If 40 stages are connected in series on the same (11) board, then 1 (1
0 (11 rW/cm"), open circuit voltage 28 sh,
It was possible to have a high-circuit current of 3300m8 and a conversion efficiency of 7.5%.
このため第１、第２、第３の開溝の作製に５）′ノいて
は、そのゼ、要時間は最大３０分以内でな【ノれはなら
ない。Therefore, the time required for producing the first, second, and third grooves should not exceed 30 minutes at most.
しかし第１の導電ｉ１Ａ、半導体、第２の導電膜に対す
るＬ’ＳのＳＳは１ｍ／分が最大であり、Ｊっのパイル
あたり２ （ＸＣすＫ４Ｏ体）Ｋ２Ｏ枚（パノ千枚数）
（延−＼１６０＋ｎ）の長さの開溝を３０分で作らな
（Ｊれはならない。However, the maximum SS of L'S for the first conductive i1A, semiconductor, and second conductive film is 1 m/min, and 2 (XC K4O body) K2O sheets (Pano thousand sheets) per J pile.
Make an open groove with a length of (length -\160+n) in 30 minutes.
かかる場合、本発明装置においては、８本し−作ること
ができる。即Ｉ）３０分以内に１ハノーノーず−、てに
開ｉＭを作ることがβＪ能となった。In such a case, the apparatus of the present invention can produce eight pieces. Therefore, it became possible to create an open iM within 30 minutes.
以上の説明のことく１枚のパイルが２０ｃｍＸ ＧＯｃ
ｍを自し、１ハツチ２０枚としてパネル内に４０／ト−
の開溝を一定の間隙で作製さ−已んとした１１、ｔ、こ
の１回（１２）
のプロセスで（１ハツチ）での工４！Ｉ！時間を３０分
とすると、第１の導電膜（２）、半導体（３）、第２の
導電膜（４）をそれぞれ３０分で作ることが初めて可能
になった。As explained above, one pile is 20cmX GOc
m is 20 sheets per hatch, and 40/toad is placed in the panel.
The open grooves were made with a constant gap - 11, t, and this one (12) process was (1 hatch) 4! I! When the time was set to 30 minutes, it became possible for the first time to form the first conductive film (2), the semiconductor (3), and the second conductive film (4) in 30 minutes each.
以上の如くにして本発明のレーザ加工機により被膜数２
０ｃｍ Ｘ ６０ｃｍのパネルを４０枚／時間の多量生
産が可能となった。As described above, the number of coatings is 2 by the laser processing machine of the present invention.
It has become possible to mass produce 40 panels/hour with a size of 0cm x 60cm.
さらにこの光電変換装置においては、この集積化構造を
６−１しめるに際し、本発明方式で番よコンピュータに
より制御された完全無人化製造ラインを作ることが可１
ｊヒとなり、きわめて主菜的に価値人なるものであるこ
とが判明した。Furthermore, in this photoelectric conversion device, when implementing this integrated structure, it is possible to create a completely unmanned production line controlled by a computer using the method of the present invention.
It turned out that he was an extremely valuable person.
本発明において、被加工面は水平面にＸＹテーブル上に
配設をした。しかしこれは垂直に配設をしても、またこ
の基板の移動ではなくレーザの光源を移動させることに
より開溝を作ってもよいことはいうまでもない。In the present invention, the surface to be processed is placed on an XY table in a horizontal plane. However, it goes without saying that this may be arranged vertically or the open groove may be created by moving the laser light source rather than by moving the substrate.
また第２図において、光電変換装置は２０ｃｍＸ６０Ｃ
ｍを４つ組の合わせて４０ｃｍＸ１２０ｃｍのＮＥＤＯ
規格とするのではなく 、４０ｃ＋ｎ ｘ４０ｃｍを３
枚配列し、おなしく１３）
パネル形成をおこなってもよい。にだ電卓用その他民生
用の光電変換装置を含む下線外装Ｂ１ｊ：の製造に本発
明方式を同様に応用するごとも有〃ノである。In addition, in Figure 2, the photoelectric conversion device is 20cm x 60C.
A set of 4 m with a total size of 40cm x 120cm NEDO
Rather than using it as a standard, 40c+n x 40cm is 3
13) You may arrange the sheets and form a panel. It is also possible to similarly apply the method of the present invention to the production of the underlined exterior B1j: including photoelectric conversion devices for Nida calculators and other consumer use.
第１図は本発明のレーザ加」二機の１１７２２図を示す
。
第２図は本発明のレーザ加工力式によって作られた光電
変換装置を示す。
４４′：’Ｉ出ｊ頭人
（１４）
羊２（コ
一４９９FIG. 1 shows a 11722 diagram of two laser machines of the present invention. FIG. 2 shows a photoelectric conversion device manufactured by the laser processing force method of the present invention. 44': '1 head man (14) sheep 2 (ko 1 499
Claims (2)
、前記複数のレーザ光をＸ方向に走査する手段と、被加
工面または前記レーザ光をＹ方向に移動する手段とを有
するごとにより、被加工面の任意のＸＹ座標に複数のレ
ーザ加工処理を同時に施すことを１４徴とするレーデ加
−Ｌ機。1. Having a means for dividing one radar beam into a plurality of laser beams, a means for scanning the plurality of laser beams in the X direction, and a means for moving the processed surface or the laser beam in the Y direction. This is a Raded machining L machine whose 14 characteristics are to perform multiple laser machining processes simultaneously on arbitrary XY coordinates of the surface to be machined.
、前記複数のレーザ光をＸ方向に走査する手段と、一定
の間隙を杓して配設された２つの被加工面を相対せしめ
、前記間隙に前記複数のレーザ光を導入し、移動可能な
ミラー−によりＹ方向に走査する手段とを有し、前記ミ
ラー−により一方の被加工面に前記レーザ光を照射して
開溝を設りる手段と、前記ミラーにより他方の被加工面
に＋ｉｉＪ記シ・−９′光を照（１） 躬し゛ζ開溝を形成・已しめる日没３とをＹ−＋’ す
るごとを特徴とするレーザ加工機。 ３、特許請求の範囲第２項において、ミラーを反転せし
めて一方の被加工面と他方の加工１ｍとに開溝を設りる
ことを特徴とするレ−ヂ加工機。2. A means for dividing one laser beam into a plurality of LED beams, a means for scanning the plurality of laser beams in the means for introducing the plurality of laser beams into the gap and scanning the laser beams in the Y direction with a movable mirror; the laser beams are irradiated onto one workpiece surface by the mirror to open the groove. and a means for providing +iiJ-9' light on the other workpiece surface by the mirror (1). A laser processing machine featuring: 3. A radial processing machine according to claim 2, characterized in that the mirror is inverted to form an open groove on one surface to be processed and 1 m on the other surface to be processed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58067972A JPS59193782A (en) | 1983-04-18 | 1983-04-18 | Laser working machine |
| PCT/JP1984/000198 WO1984004205A1 (en) | 1983-04-18 | 1984-04-18 | Method of manufacturing photoelectric transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58067972A JPS59193782A (en) | 1983-04-18 | 1983-04-18 | Laser working machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59193782A true JPS59193782A (en) | 1984-11-02 |
Family
ID=13360408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58067972A Pending JPS59193782A (en) | 1983-04-18 | 1983-04-18 | Laser working machine |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS59193782A (en) |
| WO (1) | WO1984004205A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964819B2 (en) * | 2005-08-26 | 2011-06-21 | Electro Scientific Industries, Inc. | Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014441A (en) * | 1983-07-04 | 1985-01-25 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140698A (en) * | 1974-10-04 | 1976-04-05 | Tokyo Shibaura Electric Co |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
| ATE8514T1 (en) * | 1980-09-18 | 1984-08-15 | L'etat Belge, Represente Par Le Secretaire General Des Services De La Programmation De La Politique Scientifique | PROCESSES FOR CRYSTALLIZING FILMS AND FILMS OBTAINED THUS. |
-
1983
- 1983-04-18 JP JP58067972A patent/JPS59193782A/en active Pending
-
1984
- 1984-04-18 WO PCT/JP1984/000198 patent/WO1984004205A1/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140698A (en) * | 1974-10-04 | 1976-04-05 | Tokyo Shibaura Electric Co |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7964819B2 (en) * | 2005-08-26 | 2011-06-21 | Electro Scientific Industries, Inc. | Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1984004205A1 (en) | 1984-10-25 |
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