JPS59155161A - Wire for bonding of semiconductor element - Google Patents

Wire for bonding of semiconductor element

Info

Publication number
JPS59155161A
JPS59155161A JP58030041A JP3004183A JPS59155161A JP S59155161 A JPS59155161 A JP S59155161A JP 58030041 A JP58030041 A JP 58030041A JP 3004183 A JP3004183 A JP 3004183A JP S59155161 A JPS59155161 A JP S59155161A
Authority
JP
Japan
Prior art keywords
wire
core wire
bonding
gold
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58030041A
Other languages
Japanese (ja)
Other versions
JPH0213814B2 (en
Inventor
Yoichi Yorita
寄田　洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DAIICHI DENKO KK
Original Assignee
DAIICHI DENKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DAIICHI DENKO KK filed Critical DAIICHI DENKO KK
Priority to JP58030041A priority Critical patent/JPS59155161A/en
Publication of JPS59155161A publication Critical patent/JPS59155161A/en
Publication of JPH0213814B2 publication Critical patent/JPH0213814B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43825—Plating, e.g. electroplating, electroless plating
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    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
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    • H01L2924/01005—Boron [B]
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Abstract

PURPOSE:To increase tensile strength, to reduce cost and to eliminate the need for a corrosion-resisting and acid-resisting protection by plating the surface of a superfine core wire made of a conductive metal with gold. CONSTITUTION:The core wire 1 of a wire for bonding a semiconductor element is made of a copper alloy containing copper or tin. A gold plating layer 2 is applied on the surface of the core wire 1 through an electroplating method or a hot dipping method. Oxygen-free copper of not less than 99.99% purity is used as copper in the core wire 1. The diameter of the core wire 1 is approximately 0.02mm., and the thickness of the layer 2 is approximately 0.0025mm.. 10-15% of the diameter of the core wire 1 is preferable as the thickness of the layer 2. The whole is annealed as required. The breaking strength (A) of the wire not annealed is higher than that (C) of conventional gold wires within a total temperature range, and the breaking strength (B) of the wire annealed is higher at approximately 200 deg.C or more. With the wire annealed, a bending is small and linearity is excellent on a winding or a rewinding to a bobbin, and a large solid loop can be obtained.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体素子のチップ電極と外部リードとを接
続するために使用するボンディング用ワイヤに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a bonding wire used to connect a chip electrode of a semiconductor element and an external lead.

（従来技術） トランジスター、ＩＣまたはＬＳＩ等の半導体素子を組
立てるには、チップ電極と外部リードとを電気的に接続
する工程が必要であり、この工程には通常、直径０．０
１〜０．０６ｍの極細の金属ワイヤで結線するワイヤボ
ンディングという作業が行われている。ワイヤボンディ
ングは、初期においては手動式で行われているが、近年
は高速自動ボンダによる自動化が進み、ワイヤボンディ
ング工程の良否が半導体の信頼性を大きく左右するとこ
ろから、これら用いるワイヤに要求される性能が一層き
びしくなっている。(Prior Art) Assembling semiconductor elements such as transistors, ICs, or LSIs requires a process of electrically connecting chip electrodes and external leads, and this process usually involves
A process called wire bonding is used to connect wires using extremely thin metal wires of 1 to 0.06 m. In the early days, wire bonding was performed manually, but in recent years it has become more automated using high-speed automatic bonders, and since the quality of the wire bonding process greatly affects the reliability of semiconductors, there are new requirements for the wires used in these processes. Performance has become even more demanding.

従来より、一般的な量産ＩＣやＬＳＩ用のワイヤとして
金線がよく使用されている。これは、金が耐食性、耐酸
化性、展延性および導電性に優れており、更にボンディ
ングの結線方向を制約しない熱圧着ポールボンディング
が行えるからである。Gold wire has been commonly used as wire for general mass-produced ICs and LSIs. This is because gold has excellent corrosion resistance, oxidation resistance, malleability, and electrical conductivity, and furthermore, thermocompression pole bonding can be performed without restricting the bonding direction.

しかし金は高価であるばかりでなく、極細の金線は引張
り強さが弱く、特に熱圧着時に高温度に加熱された際に
軟化して強度が弱まり断線を起こしやすく、またその際
にチップ電極と外部リードとの間のループ形状が不安定
になるという難点がある。この点に鑑みて、例えば特公
昭５７−３５５７７号公報に記載のように、純金に微少
量の添加物を含有させた金線が提案されている。しかし
これは強度の面では改善されてはいるものの、高価につ
くことは変わりはない。そこで最近において、価格と強
度の面を考慮して、銅または銅合金のワイヤが提案され
ている。しかしこれらは、熱圧着ボンディングを行う際
にはその周囲を充分な非酸化性雰囲気とする必要がある
ばかりでなく、ワイヤを製造後半導体素子に組み込まれ
てしまうまで、酸化を防止するため保護ガス雰囲気中に
保管、管理する必要があり、これらに多大の労力と経費
を・要するという欠点がある。However, not only is gold expensive, but the ultra-fine gold wire has low tensile strength, and when heated to high temperatures during thermocompression bonding, it softens, weakens its strength, and is prone to wire breakage. There is a drawback that the loop shape between the lead and the external lead becomes unstable. In view of this point, a gold wire made of pure gold containing a small amount of additives has been proposed, for example, as described in Japanese Patent Publication No. 57-35577. However, although this has improved in terms of strength, it is still expensive. Therefore, recently, copper or copper alloy wires have been proposed in consideration of cost and strength. However, when performing thermocompression bonding, it is not only necessary to create a sufficiently non-oxidizing atmosphere around the wire, but also to use a protective gas to prevent oxidation after the wire is manufactured and until it is incorporated into the semiconductor device. It has the disadvantage that it needs to be stored and managed in an atmosphere, which requires a great deal of labor and expense.

（発明の目的） 本発明の目的は、引張り強度、特に熱圧着による高温時
の強度が強く、安価で、且つ特別な保護ガス雰囲気中で
保管・使用する必要のない半導体素子のボンディング用
ワイヤを提供することにある。(Objective of the Invention) The object of the present invention is to provide a bonding wire for semiconductor devices that has high tensile strength, especially strength at high temperatures by thermocompression bonding, is inexpensive, and does not require storage or use in a special protective gas atmosphere. It is about providing.

（発明の構成） 本発明の半導体素子のボンディング用ワイヤは、導電用
金属よりなる極細の芯線の正面に、金メッキ層を有して
なることを特徴とするものである。(Structure of the Invention) The wire for bonding a semiconductor element of the present invention is characterized in that it has a gold plating layer on the front side of an extremely thin core wire made of a conductive metal.

好ましくは、前記金メッキ層の厚さを、前記芯線の直径
の１０〜１５％に選定する。また、前記導電用金属とし
て、銅または銅合金が使用される。Preferably, the thickness of the gold plating layer is selected to be 10 to 15% of the diameter of the core wire. Moreover, copper or a copper alloy is used as the conductive metal.

（実　施　例） 第１図において、導電用金属よりなる極細の芯線ｌの表
面を、薄い金メッキ層２が被覆している。(Example) In FIG. 1, a thin gold plating layer 2 covers the surface of an extremely thin core wire 1 made of a conductive metal.

導電用金属としては、引張り強度が強く、導電率が高く
、金との密着性が良く、かつ安価な材料が要求され、こ
れには銅または銅に数パーセントのスズを含んだ銅合金
等が適当である。本実施例では、純度９９．９９％以上
の無酸素銅を用いた。この無酸素銅の芯線１の直径は約
０．０２ｔｍであり、高純度の金による厚さ約０．００
２５ｍｍの金メッキ層２が被覆して、直？４０．０２５
　ｖｍのボンディング用ワイヤが形成されている。As conductive metals, materials with high tensile strength, high conductivity, good adhesion to gold, and low cost are required, such as copper or copper alloys containing a few percent of tin. Appropriate. In this example, oxygen-free copper with a purity of 99.99% or more was used. The diameter of this oxygen-free copper core wire 1 is approximately 0.02 tm, and the thickness of the high-purity gold wire is approximately 0.00 tm.
Covered with 25mm gold plating layer 2, directly? 40.025
vm bonding wires are formed.

これの製造方法は以下のとおりである。The manufacturing method for this is as follows.

まず無酸素銅−を用いて直径０．１３ｎ＋の素材ワイヤ
を製造する。これに電気メツキ法または熔融メッキ法に
よって厚さ約０．０１５　ｔｍの金メッキを施す。First, a wire material having a diameter of 0.13n+ is manufactured using oxygen-free copper. This is then plated with gold to a thickness of about 0.015 tm by electroplating or melt plating.

この場合、金と銅の密着性または伸線性を考慮すると溶
融メッキ法が好ましい。このようにして得られた金メツ
キワイヤを、引抜加工によって直径０．０２５　ｖａに
仕上げる。必要に応じて約３５０度Ｃで焼鈍を行う。こ
のように、金メッキを施した後に引抜加工を行うのは、
主として極細の芯線へのメッキの困難性によるものであ
る。In this case, hot-dip plating is preferable in consideration of the adhesion between gold and copper or wire drawability. The gold-plated wire thus obtained is finished to a diameter of 0.025 va by drawing. Annealing is performed at about 350 degrees C as necessary. In this way, the drawing process is performed after gold plating.
This is mainly due to the difficulty of plating extremely thin core wires.

上述のごとく製造されたボンディング用ワイヤは、導電
性が良好であり、金の使用量が従来の金線と比較して約
６５％節約できるため安価であり、且つ金メッキ層によ
り被覆されているので、従来の銅線または銅合金線のよ
うに完全な非酸化性保護ガス雰囲気中で使用・保管する
必要がない。そして、引張り強度については、常温及び
高温に加熱した場合の破断強度を測定した結果、従来の
金線よりも強く、特に高温における強度が飛躍的に向上
していることが明らかになった。The bonding wire manufactured as described above has good conductivity, is inexpensive because the amount of gold used can be reduced by about 65% compared to conventional gold wire, and is coated with a gold plating layer. Unlike conventional copper wire or copper alloy wire, it does not need to be used and stored in a completely non-oxidizing protective gas atmosphere. As for tensile strength, the results of measuring the breaking strength when heated to room temperature and high temperature revealed that it was stronger than conventional gold wire, and that the strength at high temperatures in particular was dramatically improved.

すなわち、第２図において一曲線Ａ及びＢは本実施例の
破断強度を示すものであって、このうち曲線Ａは焼鈍前
、曲線Ｂは焼鈍後を示している。That is, in FIG. 2, curves A and B show the breaking strength of this example, of which curve A shows before annealing and curve B shows after annealing.

また曲線Ｃは、本実施例と同径の従来の金線の破断強度
を示している。これによると、焼鈍前の本実施例は全温
度範囲において従来例よりも大きな破断強度を示してお
り、特に熱圧着ポールボンディング時の加熱温度の影響
を受けることを考慮した場合の２００〜３００度Ｃの高
温においては従来例よりもはるかに優れている。また焼
鈍後の本實擲例は、常温においては従来品よりも劣るが
、熱圧着ポールボンディングを考慮した場合の高温時で
は、上述の焼鈍前のものと同様に従来例よりもはるかに
優れている。さらに、高温時における破断強度の向上は
、単に強度的に有利であるばかりでなく、熱圧着ポール
ボンディングを行う際にチップ電極と外部リードとの間
にたるみのない安定なループの形成に大きく寄与してい
る。特に焼鈍を行ったものは、ボンディング用ワイヤと
して製造または使用の際のボビンへの巻き取りまたは巻
き戻し時にワイヤの曲がりが少なく直線性に優れ、且つ
大きく丈夫なループが得られて良好である。Further, curve C shows the breaking strength of a conventional gold wire having the same diameter as that of this example. According to this, the present example before annealing shows greater breaking strength than the conventional example in the entire temperature range, especially in the 200 to 300 degree range when considering the influence of the heating temperature during thermocompression pole bonding. It is far superior to the conventional example at high temperatures of C. In addition, the real example after annealing is inferior to the conventional product at room temperature, but at high temperatures when thermocompression pole bonding is taken into account, it is much better than the conventional example, just like the one before annealing mentioned above. There is. Furthermore, the improvement in breaking strength at high temperatures is not only advantageous in terms of strength, but also greatly contributes to the formation of a stable loop with no slack between the chip electrode and external lead when performing thermocompression pole bonding. are doing. Particularly, the annealed wire is good because it has less bending during winding onto a bobbin or unwinding when being manufactured or used as a bonding wire, has excellent linearity, and can form a large and strong loop.

また本実施例により熱圧着ポールボンディングを行う際
には、当該ワイヤの下端をトーチで加熱したときに生成
するポール部分は、金の融点が銅より低いため、金メッ
キ層２の金が先に溶融して銅の芯線１を覆うようになり
、金銅ろうを形成してチップ電極との接着性が良好であ
る。Furthermore, when thermocompression pole bonding is performed according to this embodiment, the pole portion that is generated when the lower end of the wire is heated with a torch, the gold of the gold plating layer 2 melts first because the melting point of gold is lower than that of copper. Then, the copper core wire 1 is covered with gold-copper solder, which has good adhesion to the chip electrode.

本発明における金メッキ層２の厚さは、金による耐酸化
効果及び熔融被覆効果を確保する面がら薄ずぎないよう
に、−またボンディング用ワイヤとしての強度及び価格
の面から厚すぎないようにする必要がある。これらの点
を総合的に考慮すると、金メッキ層２の厚さは、芯線１
の直径の１０〜１５％が最も好ましい。また導電用金属
に用いる材質は、特に高温時における引張り強度が金よ
りも強く、価格が金よりも安いものである必要があるが
、本実施例に用いた銅または銅合金に限定されるもので
はない。The thickness of the gold plating layer 2 in the present invention is set so that it is not too thin in order to ensure the oxidation resistance effect and melt coating effect of gold, and also not too thick in terms of strength and cost as a bonding wire. There is a need. Considering these points comprehensively, the thickness of the gold plating layer 2 is the same as that of the core wire 1.
10-15% of the diameter of the diameter is most preferred. In addition, the material used for the conductive metal must have a tensile strength higher than that of gold, especially at high temperatures, and be cheaper than gold, but is limited to the copper or copper alloy used in this example. isn't it.

（発明の効果） 引張り強度、特に熱圧着ポールボンディング時の加熱に
よる高温時の強度が強（、安価で、且つ耐食性、耐酸化
性に優れて特別に完全な保護ガス雰囲気中で保管・使用
する必要のない半導体素子のボンディング用ワイヤを得
ることができる。また熱圧着ボンディングの際に、著し
い軟化を起こさず安定なループを形成し、接着性も良好
であるので、半導体の歩留まり、信頼性が向上する。(Effects of the invention) High tensile strength, especially at high temperatures caused by heating during thermocompression pole bonding (low price, excellent corrosion resistance and oxidation resistance, and can be stored and used in a special complete protective gas atmosphere) It is possible to obtain bonding wire for semiconductor elements that is not needed. Also, during thermocompression bonding, it forms a stable loop without causing significant softening, and has good adhesion, so it improves the yield and reliability of semiconductors. improves.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例を示す断面図、第２図は本実施
例及び従来例の破断強度を示すグラフである。 １・・・芯線、２・・・金メッキ層。 出願人　　第一電工株式会社FIG. 1 is a sectional view showing an example of the present invention, and FIG. 2 is a graph showing the breaking strength of this example and a conventional example. 1...core wire, 2...gold plating layer. Applicant Daiichi Denko Co., Ltd.

Claims (1)

【特許請求の範囲】 （１）、導電用金属よりなる極細の芯線の表面に、金メ
ッキ層を有してなる半導体素子のボンディング用ワイヤ
。 （２）、前記金メッキ層は、前記芯線の直径の１０〜１
５％の厚さである特許請求の範囲第（１）項記載の半導
体素子のボンディング用ワイヤ。 （３ン、前記導電用金属は、銅である特許請求の範囲第
（１）項または第（２）項記載の半導体素子のボンディ
ング用ワイヤ。 （４）、前記導電用金属は、銅合金である特許請求の範
囲第（１）項または第（２）項記載の半導体素子のボン
ディング用ワイヤ。[Scope of Claims] (1) A wire for bonding semiconductor devices, which has a gold plating layer on the surface of an ultra-fine core wire made of a conductive metal. (2) The gold plating layer has a diameter of 10 to 1 of the diameter of the core wire.
A wire for bonding a semiconductor device according to claim (1), which has a thickness of 5%. (3) The wire for bonding a semiconductor element according to claim (1) or (2), wherein the conductive metal is copper. (4) The conductive metal is a copper alloy. A wire for bonding a semiconductor element according to claim (1) or (2).
JP58030041A 1983-02-23 1983-02-23 Wire for bonding of semiconductor element Granted JPS59155161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030041A JPS59155161A (en) 1983-02-23 1983-02-23 Wire for bonding of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030041A JPS59155161A (en) 1983-02-23 1983-02-23 Wire for bonding of semiconductor element

Publications (2)

Publication Number Publication Date
JPS59155161A true JPS59155161A (en) 1984-09-04
JPH0213814B2 JPH0213814B2 (en) 1990-04-05

Family

ID=12292732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030041A Granted JPS59155161A (en) 1983-02-23 1983-02-23 Wire for bonding of semiconductor element

Country Status (1)

Country Link
JP (1) JPS59155161A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563381A1 (en) * 1984-04-19 1985-10-25 Hitachi Ltd ELECTRICALLY CONNECTING THE PELLETS AND WIRING ELEMENTS OF A SEMICONDUCTOR DEVICE TO A COPPER WIRE
JPH0332033A (en) * 1989-06-29 1991-02-12 Hitachi Ltd Electronic device
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
EP1279491A1 (en) * 2001-07-23 2003-01-29 Tao-Kuang Chang Gold wire for use in semiconductor packaging and high-frequency signal transmission and its fabrication method
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
CN100352026C (en) * 2002-11-27 2007-11-28 新日本制铁株式会社 Gold alloy bonding wire for semiconductor device and process for producing the same
US7390370B2 (en) 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires
JP2008533707A (en) * 2005-03-08 2008-08-21 ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング Copper bonding wire or extra fine wire with improved bonding and corrosion properties
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
US7969021B2 (en) 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
CN103219248A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of gold-plated bonding copper wire

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025870A1 (en) 2006-06-02 2007-12-06 Robert Bosch Gmbh Bonding wire for connecting pad and pin of chip, has outer and inner layers, where inner layer has high conductivity, low bending stiffness, low breaking load and low tensile strength than that of outer layers and wire is designed as tape

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JPS5829835U (en) * 1981-08-20 1983-02-26 沖電線株式会社 Bonding wire for semiconductor integrated circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829835B2 (en) * 1975-03-11 1983-06-24 三菱油化株式会社 Renewable information

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JPS5829835U (en) * 1981-08-20 1983-02-26 沖電線株式会社 Bonding wire for semiconductor integrated circuits

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563381A1 (en) * 1984-04-19 1985-10-25 Hitachi Ltd ELECTRICALLY CONNECTING THE PELLETS AND WIRING ELEMENTS OF A SEMICONDUCTOR DEVICE TO A COPPER WIRE
JPH0332033A (en) * 1989-06-29 1991-02-12 Hitachi Ltd Electronic device
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US7969021B2 (en) 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
EP1279491A1 (en) * 2001-07-23 2003-01-29 Tao-Kuang Chang Gold wire for use in semiconductor packaging and high-frequency signal transmission and its fabrication method
US7390370B2 (en) 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires
CN100352026C (en) * 2002-11-27 2007-11-28 新日本制铁株式会社 Gold alloy bonding wire for semiconductor device and process for producing the same
JP2008533707A (en) * 2005-03-08 2008-08-21 ヴェー ツェー ヘレーウス ゲゼルシャフト ミット ベシュレンクテル ハフツング Copper bonding wire or extra fine wire with improved bonding and corrosion properties
WO2011013527A1 (en) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
KR20120035093A (en) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 Bonding wire for semiconductor
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
CN103219248A (en) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 Manufacturing method of gold-plated bonding copper wire

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