JPS59152675A - Amorphous silicon photovoltaic element - Google Patents
Amorphous silicon photovoltaic elementInfo
- Publication number
- JPS59152675A JPS59152675A JP58028290A JP2829083A JPS59152675A JP S59152675 A JPS59152675 A JP S59152675A JP 58028290 A JP58028290 A JP 58028290A JP 2829083 A JP2829083 A JP 2829083A JP S59152675 A JPS59152675 A JP S59152675A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- layer
- substrate
- aluminum
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- -1 oxidized indium Chemical class 0.000 claims abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（イ） 技術分野
本発明はアモルファスシリコン薄膜を用いた光起電力素
子に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field The present invention relates to a photovoltaic device using an amorphous silicon thin film.
１口）技術の背景
近年クリーンで非枯渇性のエネルギを利用する低コスト
太陽電池としてアモルファスシリコン太陽電池が注目さ
れている。アモルファスシリコン太陽電池は、安価な基
板と低温で形成できる厚さ１μｍ以下の薄膜で構成でき
るため、低コストで製造できる特長がある。このような
特長を十分に生かすためには、変換効率を向上し、実用
に供し得る性能にする必要がある。1) Background of the technology In recent years, amorphous silicon solar cells have attracted attention as low-cost solar cells that utilize clean, non-depletable energy. Amorphous silicon solar cells have the advantage of being able to be manufactured at low cost because they can be constructed from inexpensive substrates and thin films with a thickness of 1 μm or less that can be formed at low temperatures. In order to make full use of these features, it is necessary to improve the conversion efficiency and achieve a performance that can be put to practical use.
通常のアモルファスシリコン太陽電池は５５０ｔｔｍ近
傍に叢大値を持つ分光感度特性を有し、より短波長の太
陽光を比較的よく利用しているが、より長波長の太陽光
はほとんど利用していない。乙のため、太陽光を有効に
利用して変換効率を向上するために、通常のアモルファ
スシリコンよりバンドギャップの小さい混晶系アモルフ
ァスシリコン薄膜を積層することが検討されている。し
かし材質の異なる薄膜を積層することは、製造装置や製
造プロセスを複雑化し、さらに高価な原料を必要とする
場合があるなど、アモルファスシリコン太陽電池の特長
である低コストを損ないかねない。Ordinary amorphous silicon solar cells have a spectral sensitivity characteristic with a peak value near 550 ttm, and use sunlight with shorter wavelengths relatively well, but hardly use sunlight with longer wavelengths. . Therefore, in order to effectively utilize sunlight and improve conversion efficiency, stacking mixed crystal amorphous silicon thin films, which have a smaller band gap than normal amorphous silicon, is being considered. However, stacking thin films made of different materials complicates the manufacturing equipment and process, and may require more expensive raw materials, which could undermine the low cost that amorphous silicon solar cells are known for.
（ハ）発明の開示
本発明は、アモルファスシリコン薄膜中の光の行路長を
増大して吸収係数の小さい長波長光の吸収を太き（し、
特性を向上したアモルファスシリコン光起電力素子を提
供するものである。(C) Disclosure of the Invention The present invention increases the path length of light in an amorphous silicon thin film to thicken the absorption of long wavelength light with a small absorption coefficient.
The present invention provides an amorphous silicon photovoltaic device with improved characteristics.
以下、９実施例に従って詳細に説明する。Hereinafter, a detailed explanation will be given according to nine embodiments.
第１図は本発明によるアモルファスシリコン太陽電池の
実施例を示す断面図である。１はアルミニウム基板で、
表面に陽極酸化によって電気化学的にアルマイト層２を
約１μｍ形成している。ろはアルマイト層上に形成した
導電層であり、４はアモルファスシリコン層で、基板側
から伝導型がｐ型、ｉ型、ｎ型の順に構成されている。FIG. 1 is a sectional view showing an embodiment of an amorphous silicon solar cell according to the present invention. 1 is an aluminum substrate,
An alumite layer 2 of about 1 μm is electrochemically formed on the surface by anodic oxidation. 4 is a conductive layer formed on the alumite layer, and 4 is an amorphous silicon layer, the conductivity types of which are arranged in the order of p-type, i-type, and n-type from the substrate side.
それぞれの膜厚は１００人、５０００人、５００Ａであ
る。５は透明電極で厚さ７００にの錫を添加した酸化イ
ソジウム膜を用いた。The respective film thicknesses are 100mm, 5000mm, and 500A. No. 5 is a transparent electrode using a tin-added isodium oxide film having a thickness of 700 mm.
基板１の表面にアルマイト層２を形成するのは、基板表
面に可視光の波長程度の凹凸を形成するものである。本
発明は陽極酸化によって電気化学的に形成されるアルマ
イト層の表面が波長５５０〜８００ ｎｍの太陽光を拡
散反射させ、アモルファスシリコン中の行路長を長くし
、その結果太陽電池の短絡電流を大きくできることを見
い出して完成の範囲外では、拡散反射量が少なく所期の
効果を得ることができない。導電層６はアモルファスシ
リ−ｒンｍで発生した電流番取り出すためのもノテあり
、本実施例では膜厚０．５μｍ及び［１，７μｍのアル
ミニラムラ用イタ。該導電層にはアルミニウムのほかに
銀、チタンなどの金属を用いることができ、また酸化イ
ソジウム、酸化錫、酸化カドミウムなどの導電性化合物
を用いることもできる。該導電層の膜厚は特に限定する
ものではないが、薄すぎると、その電気抵抗のために太
陽電池の出方を低減してしまい、また厚すぎるとアルマ
イト層の表面凹凸を牟担にしてしまうので０．０３〜１
μｍが適当である。The purpose of forming the alumite layer 2 on the surface of the substrate 1 is to form irregularities on the surface of the substrate that are approximately the same as the wavelength of visible light. In the present invention, the surface of the alumite layer, which is electrochemically formed by anodic oxidation, diffusely reflects sunlight with a wavelength of 550 to 800 nm, lengthens the path length in amorphous silicon, and as a result increases the short-circuit current of the solar cell. If you discover what is possible and are outside the scope of completion, the amount of diffuse reflection will be small and you will not be able to obtain the desired effect. The conductive layer 6 is also used to take out the current generated in the amorphous silicon layer, and in this embodiment, it is made of aluminum with a thickness of 0.5 μm and 1.7 μm. In addition to aluminum, metals such as silver and titanium can be used for the conductive layer, and conductive compounds such as isodium oxide, tin oxide, and cadmium oxide can also be used. The thickness of the conductive layer is not particularly limited, but if it is too thin, the electrical resistance will reduce the way the solar cells come out, and if it is too thick, the surface unevenness of the alumite layer will be affected. 0.03 to 1 because it is stored away
μm is appropriate.
上記構造を有する３ｄの太陽電池および、ガラス基板上
に厚さＱ、５μｍのアルミニウムを被覆した平滑な基板
を用いた３−の太陽電池を製作し、太陽光（Ａｉｒ Ｍ
ａ’ｓｓ ｊ、１ｏｏｔｒＬ駒）を照射して特性を測定
した。測定結果を表１に示す。この結果が示すように陽
極酸化したアルミニウム基板を用いることにより表面が
平担な基板に比べ短絡電流を約２０％向上することがで
きる。We fabricated a 3D solar cell with the above structure and a 3- solar cell using a smooth substrate with a glass substrate coated with aluminum with a thickness of Q and 5 μm.
a'ss j, 1ootrL piece) was irradiated and the characteristics were measured. The measurement results are shown in Table 1. As shown by these results, by using an anodized aluminum substrate, the short circuit current can be improved by about 20% compared to a substrate with a flat surface.
第 １ 表
以上詳細に説明したごとく、本発明によれば、低コスト
で光電変換効率の高い太陽電池を得ることができる。As explained in detail above in Table 1, according to the present invention, a solar cell with high photoelectric conversion efficiency can be obtained at low cost.
以、］二の発明は本発明になるアモルファスシリコン光
起電力素子の基本構造の一実施例である。基板の強度向
」二などの目的で、アルミニウムの合金を用いることも
でき、アモルファスシリコン層もｐ’ｉ−ｎ構造のほか
にショットキー形構造など種々の構造にすることができ
る。また金属電極の成分のアモルファスシリコン中への
拡散を阻止スるため導電層ろとアモルファスシリコン層
４の間に耐プラズマ性が強く、拡散が生じにくい酸化錫
などの導電性薄膜を挿入することもできる。さらに受光
面積が大きい場合、金属の集電極を形成することによっ
て透明電極の電気抵抗による電力損失を軽減することが
できる。Hereinafter, the second invention is an embodiment of the basic structure of the amorphous silicon photovoltaic device according to the present invention. For purposes such as increasing the strength of the substrate, an aluminum alloy may be used, and the amorphous silicon layer may have various structures such as a Schottky structure in addition to the pin structure. In addition, in order to prevent the components of the metal electrode from diffusing into the amorphous silicon, a conductive thin film such as tin oxide, which has strong plasma resistance and is difficult to diffuse, may be inserted between the conductive layer and the amorphous silicon layer 4. can. Furthermore, when the light-receiving area is large, power loss due to the electrical resistance of the transparent electrode can be reduced by forming a metal collector electrode.
第１図は本発明によるアモルファスシリコン光起電力素
子の１実施例を示す断面図である。
１ニアルミニウム基板
２：アルマイト層
５：金属゛ｔヒ極
４：アモルファスシリコン層
５：透明電極
代理人 弁理士 上 代 哲 司７．〃ご
迅′。
才 １図FIG. 1 is a sectional view showing one embodiment of an amorphous silicon photovoltaic device according to the present invention. 1 Aluminum substrate 2: Alumite layer 5: Metal pole 4: Amorphous silicon layer 5: Transparent electrode Patent attorney Satoshi Tsukasa Kami 7. 〃Thank you very much.'' 1 figure
Claims (1)
金に導電層を被覆した基板上に形成されてなることを特
徴とするアモルファスシリコン光起電力素子。 （２）導電層がアルミニウム、チタン、銀などの金属、
または酸化イソジウム、酸化カドミウム、酸化錫などの
導電性化合物よりなることを特徴とする特許請求の範囲
第（１）項記載のアモルファスシリコン光起電力素子。[Claims] (11) An amorphous silicon photovoltaic element formed on a substrate of anodic oxidized aluminum or aluminum alloy coated with a conductive layer. (2) The conductive layer is made of aluminum or titanium. , metals such as silver,
The amorphous silicon photovoltaic device according to claim 1, wherein the amorphous silicon photovoltaic device is made of a conductive compound such as isodium oxide, cadmium oxide, or tin oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028290A JPS59152675A (en) | 1983-02-21 | 1983-02-21 | Amorphous silicon photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028290A JPS59152675A (en) | 1983-02-21 | 1983-02-21 | Amorphous silicon photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59152675A true JPS59152675A (en) | 1984-08-31 |
Family
ID=12244477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028290A Pending JPS59152675A (en) | 1983-02-21 | 1983-02-21 | Amorphous silicon photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152675A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63249380A (en) * | 1987-04-03 | 1988-10-17 | Showa Alum Corp | Manufacture of substrate for thin film solar cell |
| WO2009041659A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Solar cell |
| WO2009041660A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Substrate for solar cell and solar cell |
| WO2010032802A1 (en) * | 2008-09-18 | 2010-03-25 | 富士フイルム株式会社 | Solar cell |
| JP2010212336A (en) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | Photoelectric converting element and method of manufacturing the same, and solar cell |
-
1983
- 1983-02-21 JP JP58028290A patent/JPS59152675A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63249380A (en) * | 1987-04-03 | 1988-10-17 | Showa Alum Corp | Manufacture of substrate for thin film solar cell |
| WO2009041659A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Solar cell |
| WO2009041660A1 (en) * | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Substrate for solar cell and solar cell |
| JP2009267336A (en) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | Substrate for solar cell and solar cell |
| WO2010032802A1 (en) * | 2008-09-18 | 2010-03-25 | 富士フイルム株式会社 | Solar cell |
| JP2010212336A (en) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | Photoelectric converting element and method of manufacturing the same, and solar cell |
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