JPS59150434A - Manufacture and apparatus of semiconductor device - Google Patents
Manufacture and apparatus of semiconductor deviceInfo
- Publication number
- JPS59150434A JPS59150434A JP58017391A JP1739183A JPS59150434A JP S59150434 A JPS59150434 A JP S59150434A JP 58017391 A JP58017391 A JP 58017391A JP 1739183 A JP1739183 A JP 1739183A JP S59150434 A JPS59150434 A JP S59150434A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- wire bonding
- mounting
- porous
- ambient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体チップのマウントあるいはワイヤボンデ
ィングに於いて使用される、ガス雰囲気を改良した半導
体装置の製造方法及び半導体製造装置に関する。1
〔発明の技術的背景とその問題点〕
半導体チップをリードフレームに半田により固着する場
合は、半田を溶解させるためそのマウント部を250〜
400 ’O程度まで加熱することが必要いてマウント
部を非酸化性あるいは還元性の雰囲気中に保つことが多
い。また半導体チップとリードフレームのリードとを金
細線を熱圧着させて接続する場合にも、そのワイヤボン
ディング部を200〜350 ’Oに加熱する必要があ
り、同様にワイヤボンディング部を非酸化性あるいは還
元性の雰囲気(以下ガス雰囲気と称す)で保つことが多
い。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device manufacturing method and a semiconductor manufacturing apparatus with improved gas atmosphere, which are used in semiconductor chip mounting or wire bonding. 1 [Technical background of the invention and its problems] When a semiconductor chip is fixed to a lead frame by solder, the mounting part must be heated to a temperature of 250 to 250 mm to melt the solder.
It is necessary to heat up to about 400'O, and the mount is often kept in a non-oxidizing or reducing atmosphere. Also, when connecting a semiconductor chip and a lead frame lead by thermocompression bonding a thin gold wire, it is necessary to heat the wire bonding part to 200 to 350'O. It is often maintained in a reducing atmosphere (hereinafter referred to as a gas atmosphere).
ガス雰囲気を形成する方法はマウント装置とワイヤボン
ディング装置とではほとんど同じであるので、以後ワイ
ヤボンブイラグ装置を例にとって説明する。第1図(a
)にその−例を示す。ヒータプロック1上にリードフレ
ーム2が載置されており、押きえ板3によりリードフレ
ーム2はヒータブロック1に押圧されている。リードフ
レーム2上に半冑体チップ4が固着されており、その上
方にはキャピラリ6が移動自在に配置されている。ヒー
タブロック1に設けられた穴に、電源に′接続゛された
ヒータ7が挿入されており、このヒータ7によりヒータ
フロック1が加熱され、とのヒータブロック1により、
リー ドフレーム2や半導体チップ4が加熱される。ワ
イヤボンディング部すなわち半W体チッフ4周辺部の側
上方にパイプ5が配置されている。なおキャピラリ等の
駆動機構は省略(た。本装置においては、パイプ5に加
熱されたガスを供給し、その先端部よりカスをワイヤボ
ンディング部に吹付けて、ガス雰囲気を形成する。Since the method for forming a gas atmosphere is almost the same for a mounting device and a wire bonding device, the following explanation will be given using a wire bonding lug device as an example. Figure 1 (a
) shows an example. A lead frame 2 is placed on a heater block 1, and the lead frame 2 is pressed against the heater block 1 by a holding plate 3. A half-shell chip 4 is fixed on a lead frame 2, and a capillary 6 is movably arranged above it. A heater 7 connected to a power source is inserted into a hole provided in the heater block 1, and the heater block 1 is heated by the heater 7.
The lead frame 2 and semiconductor chip 4 are heated. A pipe 5 is disposed above the wire bonding portion, that is, the peripheral portion of the half-W chip 4. Note that a drive mechanism such as a capillary is omitted. In this apparatus, a heated gas is supplied to the pipe 5, and a gas atmosphere is created by blowing the waste onto the wire bonding part from the tip thereof.
L、かしキャピラリ6に、ワイヤボンディング部付近を
自由自在に移動できるようVこしておく必敷があるため
、パイプ5をワイヤボンディング部にあまり近づけるこ
とはできず、この方法ではパイプ5をカス雰囲気形成の
だめの最適位置に配置するととが困難である。さらにキ
ャピラリ6と)ζイブ5とが近接するため、キャピラリ
6の取り換えに支障をきたす場合があった。L, the pipe 5 cannot be brought too close to the wire bonding part because it is necessary to put a V in the capillary 6 so that it can move freely near the wire bonding part. It is difficult to locate the tank at the optimum position for creating an atmosphere. Furthermore, since the capillary 6 and the ζ eve 5 are close to each other, it may be difficult to replace the capillary 6.
第1図(b)に他の例を示す。ヒータブロック8にガス
パイプ13が設けられている。押さえ板1()にはガス
が通る穴12が形成されており、その上部しこはガスの
流路を変える遮蔽板11が設けられている。その他の部
分は第1図(a)と同じであるので説明を省略する。ガ
スをガスパイプ1;3に供給すると、そのガスは加熱さ
れ、リードフレーム2r山
のすき川を通りぬけ、穴12を通り遮蔽板11により流
路を変えられて、ワイヤボンライング部に吹き出し、ガ
ス雰囲気を形成する。しかしこの方法では半導体チップ
4が大きくなりガス1′グ囲気を形成すべき部分が拡が
ると所望のガス雰囲気を(iるのが難しくなる。特にリ
ードフレーム2表面の押さえ板10により棲われていな
い部分の大きさ口
が7〜8龍件以上になると、所望のガス雰囲気を得るの
に大きな支障が生じる。Another example is shown in FIG. 1(b). A gas pipe 13 is provided in the heater block 8. A hole 12 through which gas passes is formed in the holding plate 1 ( ), and a shielding plate 11 is provided at the upper part of the hole 12 to change the flow path of the gas. The other parts are the same as those in FIG. 1(a), so their explanation will be omitted. When gas is supplied to the gas pipes 1 and 3, the gas is heated, passes through the mountain of the lead frame 2r, passes through the hole 12, is changed in flow path by the shielding plate 11, and is blown out to the wire bonding section. Form a gas atmosphere. However, in this method, as the semiconductor chip 4 becomes larger and the area where the gas 1' atmosphere should be formed expands, it becomes difficult to create the desired gas atmosphere. If the size of the portion exceeds 7 to 8 pieces, it will be a big problem to obtain the desired gas atmosphere.
本発明は上記の事情に鑑みてなされたもので、マウント
部あるいはワイヤボンディング部のガス雰囲気を均一と
した#溝体装置の製造方法及び半?−IV、体製造装置
、を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and includes a method for manufacturing a #groove body device and a semi-finished device with a uniform gas atmosphere in the mounting portion or wire bonding portion. - IV, a body manufacturing device.
〔づダミ飄明のイ既、、νうぜ 」
加熱部材の一千m)に、ガスを透通さぜ′る多孔性ガス
放散r+lL材を設け、これに非酸化性あるいは還元性
のガスを供給し、カスを放散させてマウント部まだはワ
イヤボンディング部にガス雰囲気を形成する。このガス
雰囲気中にてマウントiたはワイヤボンディングを行う
。A porous gas dissipating material that allows gas to pass through is provided on the heating member (1,000 m long), and a non-oxidizing or reducing gas is injected into this material. A gas atmosphere is formed in the mounting section and the wire bonding section by dissipating the residue. Mounting or wire bonding is performed in this gas atmosphere.
カス放散部材は所定の孔数を有する多孔性物質その孔が
ふさがれてしま、う恐れがあり、所望のガス雰囲気を形
成することが困難となるためである。This is because the waste dissipation member is a porous material having a predetermined number of pores, and there is a risk that the pores will be blocked, making it difficult to form a desired gas atmosphere.
第2図に本発明の一実施例に係るワイヤボンディング装
置を示す。ヒータブロック15の表面部に多孔1=1.
の焼結合金で作られたガス放散部材16ガ配置されてい
る゛。このガス放散部材16にはカス供給管17が接続
されており、その接続部においてガス供給管17は、ガ
ス放散部材16に一様にガスを供給するため拡がってい
る。その他の部分は紀1図(a)と同じであるのでiR
1明を省略する。なお第2図(b)においてはキャピラ
リを省略(−2だ。ガス供給管17に供給きれたガスt
」、ヒータブロック15で加熱孕れた後、ガス放散部材
16を通過し、リードフレーム2のずきまよりワイヤボ
ンディング部へ放出される。FIG. 2 shows a wire bonding apparatus according to an embodiment of the present invention. The surface of the heater block 15 has pores 1=1.
A gas dissipation member 16 made of a sintered alloy is arranged. A waste supply pipe 17 is connected to the gas dispersion member 16, and the gas supply pipe 17 widens at the connection point to uniformly supply gas to the gas dispersion member 16. The other parts are the same as Figure 1 (a), so iR
1 omitted. Note that the capillary is omitted in Fig. 2(b) (-2).
After being heated by the heater block 15, the gas passes through the gas dissipation member 16 and is emitted from the gap in the lead frame 2 to the wire bonding section.
ガス放散部材16には非常に多数の穴があるためガスは
ワイヤボンディング部の全面に11ぼ一様に放出され、
良好なカス雰囲気を得ることができる。また同時に半導
体チップやリードフレームの形や太−きさに変更があっ
た場合でも、ワイヤボンディング部の大きさがガス放散
部材よりも大きくならない限り、同一装置で対応できる
。Since the gas dissipation member 16 has a large number of holes, the gas is emitted evenly over the entire surface of the wire bonding part.
A good dust atmosphere can be obtained. At the same time, even if there is a change in the shape or thickness of the semiconductor chip or lead frame, the same device can be used as long as the size of the wire bonding part does not become larger than the gas dissipation member.
本実施例においてはワイヤボンディングを行う場合を示
したが、本発明はマウントを行う場合にも適用できる。Although this embodiment shows the case where wire bonding is performed, the present invention can also be applied to the case where mounting is performed.
またガス放散部材の材料は耐熱性・′・)ある多孔性物
質であればよく、焼結合金に限らない。Further, the material of the gas dissipation member may be any heat-resistant porous material, and is not limited to a sintered alloy.
〔5il′i明の効果〕
本発明によればマウント部あるいはワイヤボンフィング
部に均一な非酸化性丑たは還元性の雰囲気を形成するこ
とができ、リードフレームや半田等の[v化を防止でき
る。またそのだめの装置の構造は従来のものに比べ簡略
化されており、装置製作が容易である。[Advantageous effect] According to the present invention, it is possible to form a uniform non-oxidizing or reducing atmosphere in the mounting part or wire bonding part, and it is possible to form a uniform non-oxidizing or reducing atmosphere in the mount part or wire bonding part, and it is possible to It can be prevented. In addition, the structure of the device is simpler than that of the conventional device, and the device is easy to manufacture.
;;’に Iレイ自a) 、 (b)は従来のワイヤボ
ンディング装佑′ケ示す断1111図、第2図(aJ
&i、本発明の一実施例を示j−kJi面図、H32図
(b)はその平面図である。
1.8.i5・・・ヒートプロリフ、6・・・キャピラ
リ、2・・リードフレーム、4・・・半轡体チッゾ16
・・カス放散部材。
代理人 弁理士 則 近 憲 佑
(ほか1名)
電 16
\
り
tb+
′f z 図
(cL λ
(bン
7/乙
7・′
4−/;;'I-ray self a) and (b) are cross-sections showing the conventional wire bonding equipment.
&i, A j-kJi plane view showing an embodiment of the present invention, and Fig. H32 (b) is a plan view thereof. 1.8. i5...Heat prolife, 6...Capillary, 2...Lead frame, 4...Half body Chizzo 16
...Resist dissipation member. Agent Patent attorney Kensuke Chika (and 1 other person) Telephone 16 \ ritb+ ′f z fig.
Claims (2)
過させる多孔性ガ、ス放散部材を設け°、この多孔性ガ
ス放散部材にガスを供給し、放散きれたガスにより前記
多孔性ガス放散部材の近傍にガス雰囲気を作り、このガ
ス雰囲気中にて半2#、体のマウントまたはワイヤボン
ディングを行うことを特徴とする半導体装置の製造方法
。(1) - A porous gas dissipation member that allows gas to pass through is provided on the main surface of the heating member that encloses the main surface, and gas is supplied to the porous gas dissipation member, and the dissipated gas is used to dissipate the gas. A method for manufacturing a semiconductor device, comprising: creating a gas atmosphere in the vicinity of a porous gas dissipation member; and performing half-mount, body mounting, or wire bonding in this gas atmosphere.
、カスを透過させる多孔性ガス放散部利と、この多孔性
ガス放散部材へのガス供給手段と、前記多孔付ガス放散
部材の近傍に配置されたマウント装置またはワイヤボン
ディング装置とを具備することを特徴とする半導体製造
装置。(2) - A heating member having a main surface, a porous gas dissipation section provided on the main surface that allows waste to pass through, a means for supplying gas to the porous gas dissipation member, and the porous gas dissipation member 1. A semiconductor manufacturing device comprising: a mounting device or a wire bonding device disposed near the semiconductor manufacturing device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58017391A JPS59150434A (en) | 1983-02-07 | 1983-02-07 | Manufacture and apparatus of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58017391A JPS59150434A (en) | 1983-02-07 | 1983-02-07 | Manufacture and apparatus of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59150434A true JPS59150434A (en) | 1984-08-28 |
Family
ID=11942693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58017391A Pending JPS59150434A (en) | 1983-02-07 | 1983-02-07 | Manufacture and apparatus of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59150434A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61253824A (en) * | 1985-05-02 | 1986-11-11 | Toshiba Corp | Semiconductor element assembling method |
JPS649629A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Method for supplying and compressing solder |
WO2002009156A1 (en) * | 2000-07-21 | 2002-01-31 | Temptronic Corporation | Temperature-controlled thermal platform for automated testing |
US7810703B2 (en) * | 2004-04-01 | 2010-10-12 | Oki Semiconductor Co., Ltd. | Wire bonding method |
-
1983
- 1983-02-07 JP JP58017391A patent/JPS59150434A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61253824A (en) * | 1985-05-02 | 1986-11-11 | Toshiba Corp | Semiconductor element assembling method |
JPH0462456B2 (en) * | 1985-05-02 | 1992-10-06 | Tokyo Shibaura Electric Co | |
JPS649629A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Method for supplying and compressing solder |
WO2002009156A1 (en) * | 2000-07-21 | 2002-01-31 | Temptronic Corporation | Temperature-controlled thermal platform for automated testing |
US6744270B2 (en) | 2000-07-21 | 2004-06-01 | Temptronic Corporation | Temperature-controlled thermal platform for automated testing |
US6867611B2 (en) | 2000-07-21 | 2005-03-15 | Temptronic Corporation | Temperature-controlled thermal platform for automated testing |
US7810703B2 (en) * | 2004-04-01 | 2010-10-12 | Oki Semiconductor Co., Ltd. | Wire bonding method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4732699B2 (en) | Soldering method | |
JPS59150434A (en) | Manufacture and apparatus of semiconductor device | |
US4634043A (en) | Engaging second articles to engaged first articles | |
JPH0547812A (en) | Semiconductor device | |
JP6611004B2 (en) | Manufacturing method of semiconductor device | |
JP2010245195A (en) | Apparatus for manufacturing semiconductor device, and method for manufacturing semiconductor device | |
JP2720331B2 (en) | Workpiece suction plate | |
TWI745840B (en) | Joining device | |
EP1436827B1 (en) | Device for soldering contacts on semiconductor chips | |
JPH04186852A (en) | Bonding equipment | |
JP2004158491A (en) | Die bonding device | |
JP2809207B2 (en) | Semiconductor device repair method and repair device | |
JPS6097633A (en) | Bonding heater device | |
JPH081371A (en) | Joining method by applying magnetic field | |
JPH01274440A (en) | Wire bonding method | |
JPH07176549A (en) | Die bonder | |
JPH0294453A (en) | Wire bonding apparatus | |
JPH01284477A (en) | Automatic soldering device | |
JPS58159340A (en) | Wire bonding method | |
JP2021082616A (en) | Manufacturing method of semiconductor device | |
JPH02276258A (en) | Wire bonding device | |
JPH07193100A (en) | Method and apparatus for bonding | |
JPH1032384A (en) | Method and apparatus for removing surface mounted device with fin | |
JP2000353723A (en) | Solder ball carrier and manufacture thereof | |
JP2003069215A (en) | Method and device for removing bga |