JPS59124564A - Waxing tool and wax application using it - Google Patents
Waxing tool and wax application using itInfo
- Publication number
- JPS59124564A JPS59124564A JP57228591A JP22859182A JPS59124564A JP S59124564 A JPS59124564 A JP S59124564A JP 57228591 A JP57228591 A JP 57228591A JP 22859182 A JP22859182 A JP 22859182A JP S59124564 A JPS59124564 A JP S59124564A
- Authority
- JP
- Japan
- Prior art keywords
- wax
- wafer
- ceramic body
- tool
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はシリコンウェーハ、サファイア基板の如き薄板
等を研摩する際に用いるワックス張り具とそれを用いた
ワックス付は方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a waxing tool used for polishing thin plates such as silicon wafers and sapphire substrates, and a waxing method using the same.
従来から、殊に電子工業に用いるシリコンウェーハ、フ
ェライト、サファイア基板等は表面粗度（Ｒｍａｘ）が
数μｍ以下と極めて精緻な鏡面状態に研摩されたものが
使用されるが、こような鏡面状態に研摩するには、研摩
されるシリコンウェーハ、サファイア基板等（以下、こ
れらを単にウェーハと称す）を、平坦度が数μｍ以下と
極めて良好な表面をもった被研摩物体固定用の定盤に対
しワックス材でもって固定した後、ポリッシング加工さ
れるが、このように定盤にウェーハをワックス伺げによ
り固定する工程で用いるワックスの張り具にウェーハを
載置し、雉ウェーハの上面にワックスをスプレィした後
、スプレィしたワックスの熔融温度に適した８０℃〜１
６０℃程度の雰囲気中にて加熱することによりウェーハ
上面にて一様にワックスを溶かし、該ウェーハ上に前記
定盤を載置した後、冷却し、ウェーハを定盤にワックス
固定された状態のもとて前記ワックス張り具から引き離
した後、ワックス張り具に接触していたウェーへ面を他
のポリッシング装置においてポリッシング加工を施す工
程をとる。Traditionally, silicon wafers, ferrite, sapphire substrates, etc., used particularly in the electronics industry, have been polished to an extremely precise mirror finish with a surface roughness (Rmax) of several μm or less. To polish a silicon wafer, sapphire substrate, etc. (hereinafter simply referred to as a wafer), the silicon wafer, sapphire substrate, etc. to be polished is placed on a surface plate for fixing the object to be polished, which has an extremely good surface with a flatness of several μm or less. On the other hand, the wafer is fixed with a wax material and then polished, but the wafer is placed on a wax tensioner used in the process of fixing the wafer to the surface plate with a wax plate, and wax is applied to the top surface of the wafer. After spraying, apply 80℃ to 1, which is suitable for the melting temperature of the sprayed wax.
The wax is uniformly melted on the top surface of the wafer by heating in an atmosphere of about 60°C, and the surface plate is placed on the wafer, and then cooled and the wafer is fixed with wax on the surface plate. After the wafer is separated from the wax tensioner, the surface of the wafer that was in contact with the wax tensioner is polished using another polishing device.
そこで、上述の如（定盤にウェーハをワソクスイ」けす
る工程において用いられるワックス張り具には従来から
熱膨張率が小さく、発錆の少ないニソケル−コハルト合
金もしくは鉄系金属製のものが多用されていた。Therefore, the wax tensioning tools used in the above-mentioned process (sweeping the wafer onto the surface plate) have traditionally been made of Nisokel-Cohart alloy or iron-based metals, which have a low coefficient of thermal expansion and are less prone to rust. was.
ところが、このような金属製のワックス張り具では熱膨
張率が比較的大きいことから、ウェーハ上のワックスを
加熱して溶す温度と定盤に固定すべ（冷却した場合の温
度差でもってワックス付けにより定盤に貼着固定する際
にウェーハに不等圧縮応力が作用したり、定盤自体の変
形が起こり、研摩された後のウェーハ表面の平面度が悪
いなどの不都合があった。またワックス張り具が金属製
のものでは、ウェーハを載置する表面に傷が付き易く、
ワックス付は工程の作業時には細心の注意を払う必要が
あり、また薬品によって腐蝕したり、発錆する恐れがあ
るため、保管時の管理に万全の注意を要した。However, since such metal wax tensioning tools have a relatively large coefficient of thermal expansion, waxing is difficult due to the difference in temperature between heating and melting the wax on the wafer and fixing it on the surface plate (cooling it down). There were disadvantages such as unequal compressive stress being applied to the wafer when it was attached and fixed to the surface plate, deformation of the surface plate itself, and poor flatness of the wafer surface after polishing. If the tensioner is made of metal, the surface on which the wafer is placed is likely to be scratched.
Waxing requires extreme care during the process, and there is a risk of corrosion or rust due to chemicals, so careful management was required during storage.
さらに、ワックス張り具へのウェーハの載置、ワックス
のスプレー、スプレーしたワノクスン容融のため炉中に
入れ加熱する工程、定盤への被研）？体（ウェーハ）固
定、及び定盤よりの剥Ｍｌｔ工程のうち、とくに炉中を
通し加熱する工程があるため上記の工程を含んだウェー
ハの全研摩工程を自動化することができず、名人芸的な
作業にたよっていた。このため研摩されたウェーハの品
質にばらつきが生じ、最終製品としての、例えば、半導
体製品の歩留りや特性を左右する原因をなしていた。In addition, the process of placing the wafer on a wax tensioning tool, spraying wax, heating it in a furnace to melt the sprayed wax, and polishing it on a surface plate)? In the Mlt process of fixing the body (wafer) and peeling it from the surface plate, there is a process of passing it through a furnace and heating it, so it is not possible to automate the entire wafer polishing process, including the above processes, and it is difficult to perform a master craftsmanship process. I was relying on some work. This causes variations in the quality of the polished wafers, which affects the yield and characteristics of the final product, such as a semiconductor product.
本発明は上述した如き事情に鑑みて開発したもので、図
により本発明実施例を詳述する。The present invention was developed in view of the above-mentioned circumstances, and embodiments of the present invention will be described in detail with reference to the drawings.
第１図はワックス張り具１の一部破断面図で、このワッ
クス張り具１はセラミック体１０で構成され、上面１１
ををし、この上面１１は以下に述べる被研摩材であるウ
ェーハを載置すべく、平坦度が約５μｍ以下の高度に研
摩された平面を成し、まカーセラミック体１０は主にア
ルミナセラミックを用いるため、熱膨張率が小さいうえ
、熱変形かはとんとなく、経時変化の少ないものとなっ
ている。さらにセラミック体１０には、真空チャ・ツク
用の吸引孔１２をイ丁するが、この吸引孔１２は下面よ
り上面１１に貫通ずる如くありられ、上面１１近傍では
小径を成し、かかる吸引孔１２はワックス張り具ｌにお
いて多数個が一様な分布状態のちとに穿設しである。FIG. 1 is a partially cutaway sectional view of a wax tensioner 1, which is composed of a ceramic body 10 and has an upper surface 11.
The upper surface 11 is a highly polished plane with a flatness of about 5 μm or less in order to place a wafer, which will be described below, and the ceramic body 10 is mainly made of alumina ceramic. Because it uses , the coefficient of thermal expansion is small, there is no thermal deformation, and there is little change over time. Furthermore, the ceramic body 10 is provided with a suction hole 12 for a vacuum chuck. Reference numeral 12 denotes a wax tensioning device 1 in which a large number of holes are drilled after being uniformly distributed.
また、１４ばセラミック体１０中の、特に上面１１より
５卸以内の挽く浅い位置に埋設された発熱抵抗パターン
であり、その形成方法としては、上記吸引孔１２をあ（
）る部位を回避した形状に抵抗体ペーストでもって前記
セラミック体１０を成す生又は仮焼成体の上面にパター
ン印刷し、印刷されたパターンの両ｉ７ｉ！、ｉは醋１
面に露出されｊこメタライズ面Ｌ４ａ、１４１）とし、
通電り−ｌ゛線１５．１６がロウ付けされるようになっ
ている。しかして抵抗体ペーストが所定形状に印刷され
たセラミック体１０を成す生又は仮焼成体の上面には生
のセラミックシート′が貼り合わされるか、あるいはセ
ラミック成分の熔解液が塗布され、且つ複数の吸引孔１
２が穿設された後、焼成されることによってセラミック
体１０中に発熱抵抗パターン１４を内蔵し、真空チャッ
ク用の吸引孔１２をもったワックス張り具１が製作され
る。また被研摩材であるウェーハが載置される上面１１
は面精度（平坦度）が、約５μｍ以下となるように鏡面
状に研摩されている。Further, numeral 14 is a heating resistor pattern embedded in the ceramic body 10, particularly at a shallow position within 5 mm from the upper surface 11, and its formation method is as follows:
) A pattern is printed on the top surface of the raw or pre-fired body forming the ceramic body 10 using resistor paste in a shape that avoids the areas where the printed pattern is removed. , i is 醆1
The metallized surface L4a, 141) is exposed on the surface,
The energized -I wires 15 and 16 are brazed. A raw ceramic sheet' is pasted on the upper surface of the raw or pre-fired body forming the ceramic body 10 on which the resistor paste is printed in a predetermined shape, or a melt of the ceramic component is applied, and a plurality of Suction hole 1
After the holes 2 are drilled, the ceramic body 10 is fired, thereby producing a wax tensioning tool 1 having a heating resistor pattern 14 built into the ceramic body 10 and having a suction hole 12 for a vacuum chuck. Also, the upper surface 11 on which the wafer as the material to be polished is placed
is mirror-polished so that the surface accuracy (flatness) is approximately 5 μm or less.
上記のごとく構成されたワックス張り具１の作動をワッ
クス付は方法に適用した実施例によって説明する。The operation of the waxing tool 1 constructed as described above will be explained using an example in which it is applied to a waxing method.
第２図は本発明に係る新規なるワックス伺は方法におけ
る工程を説明するための一部を縦断した図面である。同
図（ａ）は供給台２に載置されたウェーハ３を真空吸着
機能をもたせた１般送盤４によりウェーハ３をその下面
に固定し、同図（ｂ）に示すように台座５上に設置され
たワックス張り具１上にウェーハ３を運び搬送盤４に作
用させている真空吸引を停止するとともに台座５を経て
ワックス張り具１に対して真空吸引作用をせしめること
によって該ワックス張り具１には第１図にて示されたよ
うに真空チャック用の吸引孔１２が穿設してあり、この
吸引孔１２を通して載置されたつ、ア。FIG. 2 is a partially longitudinal sectional view for explaining the steps in the novel wax molding method according to the present invention. In the figure (a), the wafer 3 placed on the supply stand 2 is fixed to the lower surface by a general feeder 4 equipped with a vacuum suction function, and as shown in the figure (b), the wafer 3 is placed on the pedestal 5. The wafer 3 is transferred onto the wax tensioning tool 1 installed on the wax tensioning tool 1, and the vacuum suction applied to the transfer plate 4 is stopped, and the vacuum suction action is applied to the wax tensioning tool 1 via the pedestal 5. 1 has a suction hole 12 for a vacuum chuck, as shown in FIG.
−八；３を吸引固定し、しかる後搬送盤４を移動し同図
り（、）に示す次工程にてノズル６からワックスをウェ
ーハ３の上面に溶射する。しかして同図（ｄ）の工程で
もってワックス張り具１に埋設した発熱抵抗パターン１
４（第１図参照）に通電して発熱させ、ウェーハ３を加
熱することによって前工程で溶射したワックス（図示せ
ず）を熔融し、ウェーハ３」−面に均等な厚さのワック
スの溶融膜を押圧する。この場合、ウェーハ３の熱は圧
接した定盤７に対する熱伝導によって冷却される。しか
もワックス張り具１は発熱抵抗パターン１４がウェーハ
３を載置する上面１１に極めて近い位置に埋設されてい
ることから、ワックス張り具１自体は上向１１の部分の
みが加熱されているだけであるため、定盤７を圧接した
後、発熱抵抗パターン１４への通電を停止することによ
りワックスの固化温度にまで冷却される。このようにワ
ックスが固化するごによってウェーハ３は強固に定盤７
に定着され、この後、ワックス張り具１の吸引孔１２に
作用させていた真空吸引を停止するとウェーハ３ばワッ
クス張り具１から容易に離脱することとなり、この結果
、定盤７に固定され、ウェーハ３は図示しない研摩工程
によって用途に応じた平坦度をもった状態に研摩加工さ
れる。また研摩加工の終了後、定盤７からのウェーハ３
の取はずし作業も前れたウェーハ３は容易に取りはずす
ことが可能である。 ところで、上述の如く、研摩加工
を行うべくウェーハ３を貼着固定する定盤７は金属もし
くはセラミック体で構成されるが、好ましくは熱膨張係
数が小さく、大きな耐蝕性を有し、高硬度で傷の付き難
いセラミック体で構成したものがよく、またウェーハ３
を貼着面は、ワックス張り具ｌの上面１１と同様高度の
平坦度をもった状態に鏡面研摩加工が施されている。-8; 3 is fixed by suction, and then the transfer plate 4 is moved, and wax is thermally sprayed from the nozzle 6 onto the upper surface of the wafer 3 in the next step shown in (,) in the same figure. However, the heating resistor pattern 1 embedded in the wax upholstery 1 in the process shown in FIG.
4 (see Figure 1) to generate heat and heat the wafer 3 to melt the wax (not shown) sprayed in the previous process, melting the wax to an even thickness on the wafer 3'' surface. Press the membrane. In this case, the heat of the wafer 3 is cooled by heat conduction to the surface plate 7 pressed against it. Furthermore, since the heating resistor pattern 14 of the wax tensioning tool 1 is embedded in a position extremely close to the upper surface 11 on which the wafer 3 is placed, only the upper part 11 of the wax tensioning tool 1 itself is heated. Therefore, after the surface plate 7 is pressed against the surface plate 7, by stopping the power supply to the heat generating resistor pattern 14, the wax is cooled down to the solidification temperature of the wax. As the wax solidifies in this way, the wafer 3 is firmly attached to the surface plate 7.
After that, when the vacuum suction applied to the suction hole 12 of the wax tensioning tool 1 is stopped, the wafer 3 easily separates from the wax tensioning tool 1, and as a result, it is fixed to the surface plate 7, The wafer 3 is polished by a polishing process (not shown) to a state with a flatness suitable for the intended use. Also, after the polishing process is completed, the wafer 3 is removed from the surface plate 7.
The wafer 3 that has already been removed can be easily removed. By the way, as mentioned above, the surface plate 7 to which the wafer 3 is attached and fixed in order to perform the polishing process is made of a metal or ceramic material, preferably a material having a small coefficient of thermal expansion, high corrosion resistance, high hardness, and It is best to use a ceramic body that is hard to scratch, and the wafer 3
The adhesive surface is mirror-polished to a high degree of flatness, similar to the upper surface 11 of the wax tensioner 1.
以上のような本発明に係るワックス張り具とそれを用い
たワソクスイ」け方法によれば、（１）ワ・ノクス張り
具にヒーターを内蔵しているため被研摩体であるウェー
ハを貼着固定する定盤自体を炉中で加熱する必要がない
ので、定盤の熱変形がほとんどなく、均一なワックス付
けが可能となる。（２）セラミック体より成るワックス
張り具に発熱抵抗／（ターン（ヒーター）をつ、工−ノ
＼ｔｇｔ上面近傍に内蔵されていることから、高度に研
摩されたウェーハ載置上面の熱変形がほとんどなく、か
つ経時変化をおこさず、當に一定条件下でのり・ノクス
付けができる。（３）ウェーへの貼着固定に際して定盤
を暖めたり冷却するのに必要だったエネルギーやそのた
めの時間が不要となり、かつワ・ンクス付は工程が大中
に↑Ｉ；Ｉ略化できる。（４）ワックス張り具がセラミ
ック体より成るため、薬品に侵されることがなく、ワッ
クスが上面に何着しても簡単しこ拭き取るとこができ、
またその場合でも上面に傷をつりる恐れもない。（５）
ワックス張り具に真空吸引用の孔を設しＪ被＋Ｌｌｒ摩
物体に対する真空チャ・ツク機構を設ＶＪることにより
、ワ・ノクス付け、研摩工程等のすべての工程を完全自
動化することができ、その結果、高粘度に研摩されたウ
ェーハを得ることができるため、それを用いた半導体製
品などは高ノｒ命、高信頼性のものを得ることができる
。According to the wax tensioning tool and the polishing method using the wax tensioning tool of the present invention as described above, (1) Since the wax tensioning tool has a built-in heater, the wafer that is the object to be polished can be attached and fixed. Since there is no need to heat the surface plate itself in a furnace, there is almost no thermal deformation of the surface plate, and uniform waxing is possible. (2) A heating resistor/(heater) is built into the wax tensioning device made of a ceramic body, which is built into the vicinity of the top surface of the tool, which prevents thermal deformation of the highly polished top surface on which the wafer is placed. There is almost no change over time, and it can be glued and glued under certain conditions. (3) Energy and time required to heat and cool the surface plate when fixing it to the wafer. is not required, and the waxing process can be simplified during the process. (4) Since the wax tensioning tool is made of ceramic, it will not be attacked by chemicals, and the wax can be applied to the top surface easily. Even if you wipe it off, you can easily wipe it off.
Even in that case, there is no fear of scratching the top surface. (5)
By providing a vacuum suction hole in the waxing tool and installing a vacuum chuck mechanism for the J+Llr polished object, all processes such as waxing and polishing can be fully automated. As a result, a wafer polished to a high viscosity can be obtained, and semiconductor products using the same can have high durability and high reliability.
ず一部破断面図、第２図（ａ）〜（ｆ）は本発明による
ワックス張り具を用いたワックス付り方法を説明するた
めの工程を示した断面図である。2(a) to 2(f) are cross-sectional views showing steps for explaining the waxing method using the waxing tool according to the present invention.
１：ワックス張り具 ７：定盤
１０：セラミック体 １２：吸引孔
１４：発熱抵抗パターン
出願人 京 セ ラ 株 式 会 社代表社 稲盛和
夫
第２
（ｑ）
ｒ：ゝ゛′］
（Ｃ）
図
（ｆ）1: Wax tension tool 7: Surface plate 10: Ceramic body 12: Suction hole 14: Heating resistance pattern Applicant: Kyocera Co., Ltd. Representative company: Kazuo Inamori No. 2 (q) r:ゝ゛'] (C) Figure ( f)
Claims (1)
ック体で形成し、該ワックス張り具の上面より下面に貫
通する複数の真空チャック用の吸引孔を備えるとともに
上記セラミック体中に発熱抵抗パターンを埋設したこと
を特徴とするワックス張り具。 ２、前記第１項記載のワックス張り具にウェーハを載置
し、該ウェーハにワックスを付着せしめる工程と、ワッ
クス張り具申に埋設した発熱抵抗パターンに通電して付
着したワックスを溶かした後、定盤を重ね合わせ押圧す
る工程により該定盤にウェーハを固定することを特徴と
するワックス付は方法。[Scope of Claims] (2) A wax tensioning tool on which a wafer to be polished is placed is formed of a ceramic body, and the wax tensioning tool is provided with a plurality of suction holes for a vacuum chuck penetrating from the upper surface to the lower surface, and the ceramic body A wax upholstery characterized by having a heating resistance pattern embedded inside. 2. The step of placing the wafer on the waxing tool described in item 1 above and adhering wax to the wafer, and melting the attached wax by applying electricity to the heating resistor pattern embedded in the waxing tool, and then A waxing method characterized by fixing a wafer to the surface plate by stacking and pressing the plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228591A JPS59124564A (en) | 1982-12-28 | 1982-12-28 | Waxing tool and wax application using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228591A JPS59124564A (en) | 1982-12-28 | 1982-12-28 | Waxing tool and wax application using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59124564A true JPS59124564A (en) | 1984-07-18 |
| JPH0424188B2 JPH0424188B2 (en) | 1992-04-24 |
Family
ID=16878756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57228591A Granted JPS59124564A (en) | 1982-12-28 | 1982-12-28 | Waxing tool and wax application using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59124564A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002004171A1 (en) * | 2000-07-06 | 2002-01-17 | Memc Electronic Materials, Inc. | Method and apparatus for heating a polishing block |
| CN106625205A (en) * | 2015-10-30 | 2017-05-10 | 北京实验工厂 | Grinding tool and method for square hole of servo mechanism roller transmission piston rod |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111993A (en) * | 1975-03-27 | 1976-10-02 | Supiide Fuamu Kk | Apparatus for fabricating thin work as semiconductor or the like |
| JPS5311432A (en) * | 1976-07-19 | 1978-02-01 | Hitachi Ltd | Automotive fuel consumption rate indicator |
-
1982
- 1982-12-28 JP JP57228591A patent/JPS59124564A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51111993A (en) * | 1975-03-27 | 1976-10-02 | Supiide Fuamu Kk | Apparatus for fabricating thin work as semiconductor or the like |
| JPS5311432A (en) * | 1976-07-19 | 1978-02-01 | Hitachi Ltd | Automotive fuel consumption rate indicator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002004171A1 (en) * | 2000-07-06 | 2002-01-17 | Memc Electronic Materials, Inc. | Method and apparatus for heating a polishing block |
| CN106625205A (en) * | 2015-10-30 | 2017-05-10 | 北京实验工厂 | Grinding tool and method for square hole of servo mechanism roller transmission piston rod |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0424188B2 (en) | 1992-04-24 |
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