JPH0193126A - Process of releasing semiconductor wafer from plate - Google Patents
Process of releasing semiconductor wafer from plateInfo
- Publication number
- JPH0193126A JPH0193126A JP25021387A JP25021387A JPH0193126A JP H0193126 A JPH0193126 A JP H0193126A JP 25021387 A JP25021387 A JP 25021387A JP 25021387 A JP25021387 A JP 25021387A JP H0193126 A JPH0193126 A JP H0193126A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- semiconductor wafer
- temperature
- controlled
- immersed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000007767 bonding agent Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
半導体ウェハの製造工程でセラミック成るいはパイレッ
クス・プレートに加熱軟化型の接着剤で半導体ウェハを
貼って鏡面研摩しているが、本発明は、このプレートか
ら半導体ウェハを剥がす方法に関するものである。[Detailed Description of the Invention] A. Industrial Application Field In the manufacturing process of semiconductor wafers, semiconductor wafers are adhered to ceramic or Pyrex plates with a heat-softening adhesive and polished to a mirror finish. , relates to a method for peeling a semiconductor wafer from this plate.
Ｂ 従来の技術
半導体ウェハが貼りつけられたプレートは、研摩工程が
終ると、冷却台あるいは加熱台でプレート自体を冷却あ
るいは加熱しながら、接着剤が硬・軟化するのを待って
手作業で剥がしていた。B. Conventional technology After the polishing process is completed, the plate to which the semiconductor wafer is attached is manually peeled off while the plate itself is cooled or heated on a cooling or heating table, waiting for the adhesive to harden or soften. was.
半導体ウェハは、厚さ０．２ｍｓから０，７間と薄く、
脆く、表面には微小な傷も許されないという機械化しに
くい工程である。Semiconductor wafers are thin, with thicknesses ranging from 0.2 ms to 0.7 ms.
It is a process that is difficult to mechanize because it is brittle and does not allow even the slightest scratches on the surface.
Ｃ，実施例
例１． プレートと半導体の接着力を薄弱ならしめるた
め、プレート（２）を温度制御された１０’Ｃの冷水（
１）に浸して接着剤（４）を冷却硬化させ、エアシリン
ダー（８）の力で接着層に鋭利な刃物（７）を押し込み
、傾斜したプレート（２）面から搬送溝（６）へ剥がし
落とす。C. Example 1. In order to weaken the adhesive force between the plate and the semiconductor, the plate (2) was soaked in temperature-controlled 10'C cold water (
1) to cool and harden the adhesive (4), push a sharp knife (7) into the adhesive layer using the force of the air cylinder (8), and peel it off from the inclined plate (2) surface into the conveying groove (6). Drop it.
例２．半導体ウェハ（３）部にだけ温度制御された１５
０°Ｃのシリコン・オイル噴流（５）を浴びせ、接着剤
を熱軟化させ、傾斜したプレート面（２）面から半導体
ウェハ（３）を、自重および噴流の力で滑らせて搬送溝
（６）へ落とす。Example 2. 15 The temperature was controlled only in the semiconductor wafer (3) part.
A 0°C silicone oil jet (5) is applied to heat the adhesive to soften it, and the semiconductor wafer (3) is slid from the inclined plate surface (2) by its own weight and the force of the jet into the conveying groove (6). ).
Ｄ 効 果
効果１．接着剤の硬化あるいは軟化に液体を利用した方
が加熱・冷却効率も良くて、剥がす時の温度管理も早く
正確に実行できる。D Effect Effect 1. Using a liquid to harden or soften the adhesive has better heating and cooling efficiency, and allows for faster and more accurate temperature control during peeling.
効果２．半導体ウェハ表面には、傷を付けないため無接
触であることが望ましいが、本発明においては、液中あ
るいは表面へ噴流を浴びせた状態で剥がすため、広いウ
ェハ面と非水平な方向の運動に液体が抵抗となり、剥が
した瞬間の飛び跳ねを防止でき、正確に搬送溝（６）へ
落とし込むことができる。Effect 2. It is preferable that there is no contact with the semiconductor wafer surface in order to avoid scratching it, but in the present invention, since it is peeled off in liquid or with a jet sprayed on the surface, it is difficult to remove the semiconductor wafer surface from a wide wafer surface and non-horizontal movement. The liquid acts as a resistance, which prevents the film from splashing at the moment it is peeled off, allowing it to be accurately dropped into the conveyance groove (6).
第１図は本発明の実施例１の要部の断面図。 第２図は本発明の実施例２の斜視図。 １は冷水 ２はプレート ３は半導体ウェハ ４は接着剤 ５はシリコン・オイル噴流 ６は搬送溝 ７は刃物 ８はエアーシリンダ ９は半導体ウェハ収納治具 特許出願人 大 石 孝 博 図 Ｎ FIG. 1 is a cross-sectional view of the main parts of Embodiment 1 of the present invention. FIG. 2 is a perspective view of Embodiment 2 of the present invention. 1 is cold water 2 is plate 3 is a semiconductor wafer 4 is adhesive 5 is silicone oil jet 6 is the conveyance groove 7 is a knife 8 is air cylinder 9 is a semiconductor wafer storage jig Patent applicant: Takahiro Oishi Figure N
Claims (1)
から半導体ウェハ（３）を剥がす方法。 ２、温度制御された液噴流（５）を半導体ウェハ（３）
に浴びせながらプレート（２）から剥がす方法。[Claims] 1. Plate (2) immersed in temperature-controlled liquid (1)
A method of peeling off a semiconductor wafer (3) from. 2. Transfer the temperature-controlled liquid jet (5) to the semiconductor wafer (3)
How to peel it off from the plate (2) while soaking it in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25021387A JPH0193126A (en) | 1987-10-03 | 1987-10-03 | Process of releasing semiconductor wafer from plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25021387A JPH0193126A (en) | 1987-10-03 | 1987-10-03 | Process of releasing semiconductor wafer from plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0193126A true JPH0193126A (en) | 1989-04-12 |
Family
ID=17204507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25021387A Pending JPH0193126A (en) | 1987-10-03 | 1987-10-03 | Process of releasing semiconductor wafer from plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0193126A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038432U (en) * | 1989-06-12 | 1991-01-28 | ||
| JPH05166771A (en) * | 1991-12-18 | 1993-07-02 | Enya Syst:Kk | Wafer exfoliation device |
| CN109366349A (en) * | 2018-10-31 | 2019-02-22 | 福建北电新材料科技有限公司 | A method of carbonization copper silicon unloads wax after throwing |
-
1987
- 1987-10-03 JP JP25021387A patent/JPH0193126A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH038432U (en) * | 1989-06-12 | 1991-01-28 | ||
| JPH05166771A (en) * | 1991-12-18 | 1993-07-02 | Enya Syst:Kk | Wafer exfoliation device |
| CN109366349A (en) * | 2018-10-31 | 2019-02-22 | 福建北电新材料科技有限公司 | A method of carbonization copper silicon unloads wax after throwing |
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