JPS59119751A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS59119751A
JPS59119751A JP57230789A JP23078982A JPS59119751A JP S59119751 A JPS59119751 A JP S59119751A JP 57230789 A JP57230789 A JP 57230789A JP 23078982 A JP23078982 A JP 23078982A JP S59119751 A JPS59119751 A JP S59119751A
Authority
JP
Japan
Prior art keywords
synthetic resin
lead
leads
package
resin container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57230789A
Other languages
Japanese (ja)
Inventor
「つ」守　昌彦
Masahiko Tsumori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP57230789A priority Critical patent/JPS59119751A/en
Publication of JPS59119751A publication Critical patent/JPS59119751A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]

Abstract

PURPOSE:To contrive to improve the moisture resistance by forming a cutout to a lead so as to extend inside and outside a synthetic resin package. CONSTITUTION:At the medium part of leads 41-4n a part of which is sealed in the synthetic resin package 12 together with a semiconductor element, a part extending inside and outside the package 12 is formed widely, and the Y-shaped cutout 22 is formed, thus enhancing the strength of supporting the lead by means of a supporting piece 26. At the time of molding the package 12, filling synthetic resin infiltrates into the cutout 22. Thereat, since the inner lead 24 is finely formed, the interface area with the package reduces, and the hermetic property increases, resulting in the improvement of the moisture resistance.

Description

【発明の詳細な説明】 この発明は半導体装置に係り、特に半導体集積回路（Ｉ
Ｃ）等の端子構造の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and particularly to semiconductor integrated circuits (I
C) and other terminal structure improvements.

第１図は従来のＩＣ，の縦断面を示している。放熱板２
及び複数のリード４１．４２　　・・・４ｎは、金属板
を一体成形したものである。放熱板２にはＩＣペレット
６を支持する台形状の支持部８が一体に形成され、この
支持部８の端部には棒状の突部１０が形成されている。FIG. 1 shows a longitudinal section of a conventional IC. Heat sink 2
and the plurality of leads 41, 42, . . . , 4n are integrally molded from metal plates. A trapezoidal support part 8 for supporting the IC pellet 6 is integrally formed on the heat sink 2, and a rod-shaped protrusion 10 is formed at the end of the support part 8.

支持部８の上面に配置された前記ＩＣペレット６の各電
極には、各リード４１ないし４ｎが細い金線等の導線１
１を介して電気的に接続されている。そして、放熱板２
の下辺部、その支持部８及びその突部１０、ＩＣペレッ
ト６並びにリード４１ないし４ｎの一部は、合成樹脂容
器１２の内部にモールドに妻って一体に封入されている
。Each lead 41 to 4n is connected to each electrode of the IC pellet 6 arranged on the upper surface of the support part 8 with a conducting wire 1 such as a thin gold wire.
They are electrically connected via 1. And heat sink 2
The lower side, its support portion 8 and its protrusion 10, the IC pellet 6, and a portion of the leads 41 to 4n are integrally sealed inside a synthetic resin container 12 in a mold.

放熱板２の上部中央には実装上用いる取付孔１４が形成
され、また、放熱板２の下辺両側には３個ずつの透孔１
６が形成されている。透孔１６は合成樹脂容器１２の封
止状態を高めるためのもので、成形時における合成樹脂
の流動を助長させるために形成されている。さらに、こ
の放熱板２の側部には、凹部１８が形成されている。A mounting hole 14 for mounting is formed in the center of the upper part of the heat sink 2, and three through holes 1 are formed on both sides of the lower side of the heat sink 2.
6 is formed. The through holes 16 are provided to improve the sealing state of the synthetic resin container 12, and are formed to promote flow of the synthetic resin during molding. Further, a recess 18 is formed in the side portion of the heat sink 2 .

°また、リード４１ないし４ｎは、前記ＩＣペレット６
に臨む端部を細く、合成樹脂容器１２の内部にモールド
によって支持される部分及び外部に引き出される部分を
幅広く形成し、しかも合成樹脂容器１２の内部にモール
ドされる部分には前記透孔１６と同様に１又は２個の透
孔２０が形成されている。°Also, the leads 41 to 4n are connected to the IC pellet 6.
The end portion facing the synthetic resin container 12 is made narrower, and the portion supported by the mold inside the synthetic resin container 12 and the portion drawn out to the outside are formed broadly, and the portion molded inside the synthetic resin container 12 is provided with the through hole 16. Similarly, one or two through holes 20 are formed.

一般に合成樹脂容器１２の形成には、熱硬化性合成樹脂
が使用されるが、合成樹脂と放熱板２及びリード４Ｉな
いし４ｎとを密着させ、容器１２の気密性を高めるため
に、放熱板２及びリード４１ないし４ｎには、複数の透
孔１６．２０がそれぞれ形成されている。Generally, a thermosetting synthetic resin is used to form the synthetic resin container 12, but in order to make the synthetic resin and the heat sink 2 and the leads 4I to 4n come into close contact with each other and improve the airtightness of the container 12, the heat sink 2 A plurality of through holes 16 and 20 are formed in each of the leads 41 to 4n.

しかしながら、このような封止構造では、リード４１な
いし４ｎと合成樹脂容器１２との境界面に、狭隘な隙間
がリード４Ｉないし４ｎに沿って形成されるおそれがあ
る。このような隙間の形成は合成樹脂のモールド条件等
によって大きく左右されるが、このような隙間が形成さ
れている場合には、空気中の水蒸気が毛細管現象によっ
て合成樹脂容器１２の内部に浸透し、これは配線に腐食
等の化学変化を生じさせる原因になり、これを放置する
と電気的特性の悪化や故障の発生を招来する。However, in such a sealing structure, a narrow gap may be formed along the leads 4I to 4n at the interface between the leads 41 to 4n and the synthetic resin container 12. The formation of such a gap is largely influenced by the molding conditions of the synthetic resin, etc., but if such a gap is formed, water vapor in the air will penetrate into the interior of the synthetic resin container 12 due to capillary action. This causes chemical changes such as corrosion to occur in the wiring, and if left untreated, this will lead to deterioration of electrical characteristics and occurrence of failure.

この発明は、リードの機械的強度を低下させることなく
リードと合成樹脂容器の界面面積を縮小し、リードと合
成樹脂容器の密着性を向上させて耐湿性の向上を図った
半導体装置の提供を目的とする。The present invention provides a semiconductor device in which the interface area between the leads and the synthetic resin container is reduced without reducing the mechanical strength of the leads, and the adhesion between the leads and the synthetic resin container is improved to improve moisture resistance. purpose.

、この発明は、半導体素子とともにその一部が合成樹脂
容器内に封入されるリードに、合成樹脂容器の内外に跨
る切り欠きを形成したことを特徴とする。The present invention is characterized in that a notch extending between the inside and outside of the synthetic resin container is formed in the lead, which is partially enclosed in the synthetic resin container together with the semiconductor element.

この発明の実施例を図面を参照して詳細に説明する。第
２図はこの発明の半導体装置の実施例を示し、第１図と
同一部分には同一符号を付しである。図において、リー
ド４１ないし４ｎの一部は、半導体素子であるＩＣペレ
ット６とともに、合成樹脂容器１２の内部にモールドに
よって一体に封入されている。Embodiments of the invention will be described in detail with reference to the drawings. FIG. 2 shows an embodiment of the semiconductor device of the present invention, and the same parts as in FIG. 1 are given the same reference numerals. In the figure, some of the leads 41 to 4n are integrally molded into a synthetic resin container 12 together with an IC pellet 6, which is a semiconductor element.

このリード４Ｉないし４ｎの中間部分には、合成樹脂容
器１２の内外に跨る切欠き２２が形成されている。即ち
、この実施例の場合、リード４１ないし４ｎは合成樹脂
容器１２から引き出される部分を幅広く形成するととも
に、この部分に丁字形の切欠き２２が形成されており、
この切欠き２２は一方に開放されている。換言すれば、
この切欠き２２の形成の結果、第３図に拡大して示すよ
うに、ＩＣペレット８に向かう内部リード部２４は細く
形成され、これに対向してリード４１ないし４ｎを支持
強度を高めるためにリード支持片２６が形成され、この
支持片２６の端部近傍には突片２８が形成されている。A notch 22 extending between the inside and outside of the synthetic resin container 12 is formed in the intermediate portion of the leads 4I to 4n. That is, in the case of this embodiment, the leads 41 to 4n have a wide portion drawn out from the synthetic resin container 12, and a T-shaped notch 22 is formed in this portion.
This notch 22 is open on one side. In other words,
As a result of the formation of this notch 22, as shown in an enlarged view in FIG. 3, the internal lead portion 24 facing the IC pellet 8 is formed thin, and the leads 41 to 4n facing the inner lead portion 24 are formed to be thin in order to increase the supporting strength. A lead support piece 26 is formed, and a projecting piece 28 is formed near the end of this support piece 26.

そして、切欠き２２の内部には合成樹脂容器１２を構成
している合成樹脂が充填されている。The inside of the notch 22 is filled with synthetic resin constituting the synthetic resin container 12.

また、この実施例の場合、放熱板２の下辺部には合成樹
脂の密着性を向上させるために複数の透孔１６が等間隔
に形成されている。Further, in the case of this embodiment, a plurality of through holes 16 are formed at equal intervals on the lower side of the heat sink 2 in order to improve the adhesion of the synthetic resin.

以上のように構成したので、リード４Ｉないし４ｎの切
欠き２２の内部に合成樹脂容器１２を構成する合成樹脂
が一体成形加工により侵入し、内部リード２４か細く形
成されているために内部リード２４と合成樹脂容器１２
との界面面積を縮小し、その気密性が高くなり、耐湿性
を向上させることができる。この場合、切欠き２２の形
成の結果、内部リード２４に対応してリード支持片２６
が形成され、このリード支持片２６でリード４１ないし
４ｎは、合成樹脂容器１２の内部に強固に支持され、従
来のものと同様の機械的支持強度を得ることができる。With the above structure, the synthetic resin constituting the synthetic resin container 12 enters into the notches 22 of the leads 4I to 4n due to the integral molding process, and since the internal leads 24 are formed thin, the internal leads 24 and Synthetic resin container 12
It is possible to reduce the interface area with the material, increase its airtightness, and improve moisture resistance. In this case, as a result of forming the notch 22, the lead support piece 26 corresponds to the internal lead 24.
The leads 41 to 4n are firmly supported inside the synthetic resin container 12 by the lead support piece 26, and the same mechanical support strength as the conventional one can be obtained.

特に、この実施例のように、切欠き２２の形成で内部リ
ード２４か細くなる結果、内部リード２４に沿って隙間
が生じても、その隙間が小さく、内部リード２４がクラ
ンク状に形成されていることも関係して毛細管現象の発
生を効果的に低下させることができ、水蒸気の侵入を極
力抑制することができる。In particular, as in this embodiment, even if a gap occurs along the internal lead 24 as a result of the formation of the notch 22, the internal lead 24 becomes thinner, the gap is small and the internal lead 24 is formed in a crank shape. This is also related to the fact that the occurrence of capillarity can be effectively reduced, and the intrusion of water vapor can be suppressed as much as possible.

第４図ないし第７図はこの発明の他の実施例を示してい
る。゛ 第４図に示すように、切欠き２２の内部に合成樹脂容器
１２の一部の合成樹脂３０を侵入させれば、リード４Ｉ
ないし４ｎの支持強度をより高めることでき、耐湿性に
ついては同様の効果が期待できる。4 to 7 show other embodiments of the invention.゛As shown in Fig. 4, if part of the synthetic resin 30 of the synthetic resin container 12 is inserted into the notch 22, the lead 4I
The supporting strength of 4 to 4n can be further increased, and the same effect on moisture resistance can be expected.

第５図に示すように、リード支持片２６の端部近傍の内
側に突部２８ａを形成しても同様の効果が期待できる。As shown in FIG. 5, a similar effect can be expected by forming a protrusion 28a inside near the end of the lead support piece 26.

リード支持片２６の形状については、第６図に示すよう
に、フラットな形態としても同様の効果が期待できる。Regarding the shape of the lead support piece 26, as shown in FIG. 6, the same effect can be expected even if the lead support piece 26 is flat.

また、切欠き２２は、第７図に示すように、長孔に形成
してもほぼ同等の効果が期待でき、この場合、リード４
Ｉないし４ｎの支持強度はより高くできる。Moreover, almost the same effect can be expected even if the notch 22 is formed into a long hole as shown in FIG. 7. In this case, the lead 4
The support strength of I to 4n can be higher.

以上説明したようにこの発明によれば、合成樹脂容器か
ら引き出される各リードの支持強度を低下させることな
く、各リードと合成樹脂容器との密着性を高くでき、界
面面積を縮小したので、耐湿性の向上を図ることができ
る。As explained above, according to the present invention, it is possible to increase the adhesion between each lead and the synthetic resin container without reducing the support strength of each lead pulled out from the synthetic resin container, and to reduce the interfacial area. It is possible to improve sexual performance.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体装置を示す縦断面図、第２図はこ
の発明の半導体装置の実施例を示す一部を切り欠いた正
面図、第３図はリード部分の一部を拡大した説明図、第
４図ないし第７図はこ−の発明の他の実施例を示す説明
図である。 ４１　．４２　　・　・　・　４ｎ・　・　・リード、
６・　・　・ＩＣベレット、１２・・・合成樹脂容器、
２２・・・切欠き。 第１図 ４ 第２図 “°シ 第３図 第４図 第６図 第５図 第７図FIG. 1 is a longitudinal sectional view showing a conventional semiconductor device, FIG. 2 is a partially cutaway front view showing an embodiment of the semiconductor device of the present invention, and FIG. 3 is an enlarged explanation of a part of the lead portion. 4 to 7 are explanatory diagrams showing other embodiments of this invention. 41. 42 ・ ・ ・ 4n ・ ・ Lead,
6. ・IC pellet, 12...Synthetic resin container,
22...notch. Figure 1 4 Figure 2 Figure 3 Figure 4 Figure 6 Figure 5 Figure 7

Claims (1)

【特許請求の範囲】[Claims] 半導体素子とともにその一部が合成樹脂容器の内部に封
入されるリードに、合成樹脂容器の内外に跨る切欠きを
形成したことを特徴とする半導体装置。1. A semiconductor device characterized in that a lead, a part of which is sealed inside a synthetic resin container together with a semiconductor element, has a notch extending between the inside and outside of the synthetic resin container.
JP57230789A 1982-12-25 1982-12-25 Semiconductor device Pending JPS59119751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230789A JPS59119751A (en) 1982-12-25 1982-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230789A JPS59119751A (en) 1982-12-25 1982-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS59119751A true JPS59119751A (en) 1984-07-11

Family

ID=16913286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230789A Pending JPS59119751A (en) 1982-12-25 1982-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS59119751A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63148668A (en) * 1986-12-11 1988-06-21 Mitsubishi Electric Corp Lead frame for semiconductor device
US4987474A (en) * 1987-09-18 1991-01-22 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPH067255U (en) * 1992-06-26 1994-01-28 シャープ株式会社 Resin-sealed semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234945U (en) * 1975-09-02 1977-03-11
JPS5623765A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Molded type electronic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234945U (en) * 1975-09-02 1977-03-11
JPS5623765A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Molded type electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63148668A (en) * 1986-12-11 1988-06-21 Mitsubishi Electric Corp Lead frame for semiconductor device
US4987474A (en) * 1987-09-18 1991-01-22 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPH067255U (en) * 1992-06-26 1994-01-28 シャープ株式会社 Resin-sealed semiconductor device

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