JPS59100536A - Microwave processor - Google Patents

Abstract

PURPOSE:To prevent the microwave of the titled processor from leaking improving the heating efficiency by means of coating the periphery of a microwave permeating window with a metallic film. CONSTITUTION:The periphery of a quartz window 11 to be a dielectric is coated with a metallic film 14 such as chrome etc. by means of sputtering or evaporation etc. This quartz window 11 is fixed between a waveguide 12 and an outside wall 13. Said quartz window 11 may be fixed to the waveguide 12 through the intermediary of a packing 15, a flange 16 and the metallic film 14 while to the outside wall 13 of the processing chamber through the intermediary of 0 rings 17 and the metallic film 14. At this time, the metallic film 14 must be grounded.

Description

【発明の詳細な説明】 （ａ）　　発明の技術分野 本発明はマイクロ波を用い半導体基板等の試料を熱又は
プラズマ処理するマイクロ波処理装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in a microwave processing apparatus for thermally or plasma processing a sample such as a semiconductor substrate using microwaves.

（ｂ）　　技術の背景 通常半導体基板の表面は多数の凹凸を有するのでこの上
に蒸着、或いはスパッタ等により形成される金属膜の厚
さは特に凹凸の段差部で極端に不均一となり回路パター
ンの断線等信頼性の低下を招く。この段差部における金
属膜の被覆状態即ちステップカバレッジの改善は段差部
にあたる下地材料に緩やかな勾配をつけることにより実
現できるが、この方法では素子の集積度をあげられなく
なる。このため通常は被処理基板を加熱することにより
蒸着原子の表面拡散を活発にさせなだらかな膜表面を形
成させることが多い。表面拡散促進によるこの効果を顕
著とならしめるためにはアルためにも熱処理は必要とさ
れる。加熱方法としては誘電体からなる被処理物以外の
金属部分を加熱しないマイクロ波加熱方式は有効なもの
である。(b) Background of the technology Since the surface of a semiconductor substrate usually has many irregularities, the thickness of the metal film formed thereon by vapor deposition or sputtering becomes extremely uneven, especially at the stepped portions of the irregularities, resulting in unevenness of the circuit pattern. This will cause a decrease in reliability such as wire breakage. The state of coverage of the metal film in the stepped portion, that is, the step coverage, can be improved by providing a gentle slope to the base material corresponding to the stepped portion, but this method does not allow for increased integration of the device. For this reason, the surface diffusion of vapor-deposited atoms is usually activated by heating the substrate to be processed, thereby forming a smooth film surface. In order to make this effect by promoting surface diffusion noticeable, heat treatment is also required for aluminum. As a heating method, a microwave heating method that does not heat any metal parts other than the dielectric object to be processed is effective.

（ｃ）従来技術と問題点 第１図は従来のマイクロ波処理装置を示す構成図である
。図においてマグネトロン２によシ励起される２、４’
５　ＧＨＺのマイクロ波はアンテナ３を介して導波管４
を伝播し、更に誘電体の石英窓５を透過して熱処理室６
に導入される。この窓材は真空処理室６を大気から分離
させる役割もある。排気口６ａにより減圧に排気される
処理室６に半導体ウェハ７を配設し、高周波電界（マイ
クロ波）の誘電加熱により半導体ウェハ７の熱処理を行
なう。このように構成されるマイクロ波熱処理装置１で
あって、石英窓５周辺部は窓材を破損させないための保
護バッキイグ８及びフランジ９を介して導波管４に接し
、一方ではＯＩＪソング０を介して熱処理室６の外壁に
接して固定される。しかしこのような取付構造では機械
的精度を出しにくい為、接合部である矢印Ａ、Ｂで示す
位置でマイクロ波が洩れる。更にバッキングシールは露
出しており、熱の影響を受は易くこの劣化によってマイ
クロ波の漏洩が長時間使用の場合には問題となる。(c) Prior Art and Problems FIG. 1 is a block diagram showing a conventional microwave processing apparatus. In the figure, 2 and 4' are excited by the magnetron 2.
5 GHZ microwave is transmitted to waveguide 4 via antenna 3
propagates through the dielectric quartz window 5 and enters the heat treatment chamber 6.
will be introduced in This window material also has the role of separating the vacuum processing chamber 6 from the atmosphere. A semiconductor wafer 7 is placed in a processing chamber 6 that is evacuated to a reduced pressure through an exhaust port 6a, and is heat-treated by dielectric heating using a high-frequency electric field (microwave). In the microwave heat treatment apparatus 1 configured as described above, the periphery of the quartz window 5 is in contact with the waveguide 4 via the protective backing 8 and flange 9 to prevent damage to the window material, while the OIJ song 0 is It is fixed in contact with the outer wall of the heat treatment chamber 6 through the heat treatment chamber 6. However, with such a mounting structure, it is difficult to achieve mechanical precision, so microwaves leak at the joints shown by arrows A and B. Furthermore, the backing seal is exposed and easily affected by heat, and this deterioration causes leakage of microwaves, which becomes a problem when used for long periods of time.

即ち被処理物の昇温効率が低下するだけでなく作条の安
全面でも問題となる。高い稼動率を維持させると同時に
長期使用に耐えられる熱処理装置が要求される。That is, this not only reduces the efficiency of raising the temperature of the material to be treated, but also poses a problem in terms of safety of the cropping. There is a need for heat treatment equipment that can maintain high operating rates and at the same time withstand long-term use.

（ｄ）　　発明の目的 本発明は上記の欠点に鑑み、マイクロ波洩れを防止する
に有効な遮蔽機構を備えたマイクロ波処理装置の提供を
目的とする。(d) Object of the Invention In view of the above drawbacks, it is an object of the present invention to provide a microwave processing device equipped with a shielding mechanism that is effective in preventing microwave leakage.

（ｅ）発明の構成 上記目的は本発明によればマイクロ波を伝播させる導波
管と処理室との間がマイクロ波透過窓で仕切られたマイ
クロ波処理装置に於いて、該マイクロ波透過窓の周囲を
金属で被覆することによって達せられる。(e) Structure of the Invention According to the present invention, in a microwave processing apparatus in which a waveguide for propagating microwaves and a processing chamber are partitioned by a microwave transmission window, the microwave transmission window This is achieved by coating the periphery with metal.

（ｆ）　　発明の実施例 以下本発明の実施例を図面により詳述する。第２図は本
発明の一実施例であるマイクロ波洩れを防止する石英窓
取付構造を示す要部側面図である。(f) Examples of the invention Examples of the invention will be described in detail below with reference to the drawings. FIG. 2 is a side view of essential parts showing a quartz window mounting structure for preventing microwave leakage, which is an embodiment of the present invention.

図において誘電体をなす石英窓１１の周辺にスパッタ又
は蒸着等によシフローム（Ｃｒ）等の金属膜１４を数ミ
クロンの厚さで被着させる。或いは薄い金属枠を形成し
石英窓１１の周辺に図のように装着してもよい。このよ
うに形成した石英窓１１を導波管１２と熱処理室の外壁
１３との間に取付は固定する。上記の石英窓１１は導波
管１２とはバッキング１５及び７ランジ１６、更に金属
膜、１４を介して固定され、一方処理室の外壁１３とは
０リング１７及び金属膜１４を介して固定される。この
とき金属膜１４を接地する。このような取付構造とする
ことにより石英窓１１の両端は金属膜１４により被覆さ
れるから、従来に比してマイクロ波の洩れは大幅に減少
し、しかもバッキング１５及びＯリング１７も熱の影響
を受けにくい構造とすることができる。シリコン基板の
ように誘電率の大きい半導体ウェハに高周波電磁界を印
加して加熱処理する誘導加熱法は被加熱試料自体が発熱
し加熱が均一に行なわれ、温度上昇が高速であり、しか
も入力電力を任意に制御できるから半導体プロセスに施
される各種の熱処理例えば熱酸化法や、イオン打込によ
って生ずる格子欠陥の活性化を行なうアニール等に利用
できその応用範囲は広い。装置構成は簡易であり高速処
理が可能であるため自動化に有利である。本実施例では
マイクロ波を用いた加熱方法について説明を行ったがそ
れ以外の応用としてマイクロ波を用いてプラズマを発生
させるマイクロ波エツチング装置にも同様の効果がある
。In the figure, a metal film 14 made of sifloam (Cr) or the like is deposited to a thickness of several microns around a quartz window 11 which forms a dielectric material by sputtering or vapor deposition. Alternatively, a thin metal frame may be formed and attached around the quartz window 11 as shown in the figure. The quartz window 11 thus formed is mounted and fixed between the waveguide 12 and the outer wall 13 of the heat treatment chamber. The above-mentioned quartz window 11 is fixed to the waveguide 12 via a backing 15 and a 7 flange 16, as well as a metal film 14, and is fixed to the outer wall 13 of the processing chamber via an O-ring 17 and a metal film 14. Ru. At this time, the metal film 14 is grounded. With this mounting structure, both ends of the quartz window 11 are covered with the metal film 14, so microwave leakage is significantly reduced compared to the conventional method, and the backing 15 and O-ring 17 are also protected from the effects of heat. It is possible to have a structure that is less susceptible to damage. In the induction heating method, which heats a semiconductor wafer with a high dielectric constant such as a silicon substrate by applying a high-frequency electromagnetic field, the heated sample itself generates heat, heating is performed uniformly, the temperature rises quickly, and the input power is reduced. Since it can be controlled arbitrarily, it can be used in various heat treatments performed in semiconductor processes, such as thermal oxidation, annealing to activate lattice defects caused by ion implantation, and its range of applications is wide. The device configuration is simple and high-speed processing is possible, so it is advantageous for automation. In this embodiment, a heating method using microwaves has been described, but a microwave etching apparatus that generates plasma using microwaves can have similar effects as an application other than that.

（ｇ）　　発明の効果 以上詳細に説明したように本発明ではマイクロ波漏洩を
阻止する遮蔽構造としたマイクロ波処理装置とすること
によシ昇温効率を向上させバッキングシール部の長寿命
化が期待できるから装置の稼動率を向上させる等大きな
効果がある。(g) Effects of the Invention As explained in detail above, the present invention improves temperature raising efficiency and extends the life of the backing seal by providing a microwave processing device with a shielding structure that prevents microwave leakage. This can be expected to have great effects such as improving the operating rate of the equipment.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のマイクロ波処理装置を示す構成図、第２
図は本発明の一実施例であるマイクロ波洩れを防止する
石英窓取付構造を示す要部側面図である。図中１１・・
・石英窓、１２・・・導波管、１３・・・外壁、１４・
・・金属膜、１５・・・バッキング、１６・・・７ラン
ジ、１７・・・０リング。Figure 1 is a configuration diagram showing a conventional microwave processing device;
The figure is a side view of essential parts showing a quartz window mounting structure for preventing microwave leakage, which is an embodiment of the present invention. 11 in the diagram...
・Quartz window, 12... Waveguide, 13... Exterior wall, 14.
...metal film, 15...backing, 16...7 lunge, 17...0 ring.

Claims (1)

【特許請求の範囲】[Claims] マイクロ波を伝播させる導波管と処理室との間がマイク
ロ波透過窓で仕切られたマイクロ波処理装置に於いて、
該マイクロ波透過窓の周囲を金属で被覆したことを特徴
とするマイクロ波処理装置。In a microwave processing device in which a waveguide for propagating microwaves and a processing chamber are separated by a microwave-transmitting window,
A microwave processing device characterized in that the periphery of the microwave transmission window is coated with metal.