JPS5895874A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5895874A
JPS5895874A JP56194715A JP19471581A JPS5895874A JP S5895874 A JPS5895874 A JP S5895874A JP 56194715 A JP56194715 A JP 56194715A JP 19471581 A JP19471581 A JP 19471581A JP S5895874 A JPS5895874 A JP S5895874A
Authority
JP
Japan
Prior art keywords
layer
providing
wirings
layers
solar battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56194715A
Other languages
Japanese (ja)
Inventor
Kazuo Mizuguchi
一男 水口
Masahiro Yoneda
昌弘 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56194715A priority Critical patent/JPS5895874A/en
Publication of JPS5895874A publication Critical patent/JPS5895874A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce the number of wirings, in a semiconductor integrated circuit element having a laminated structure, by providing a solar battery in at least one layer, and providing the wirings only in the layers. CONSTITUTION:A numeral 1 is an image sensor layer having a photoelectric transducer element, 2 is a layer having a logic function, 3 is a layer having a memory function, 4 is a part having a solar battery function in each layer or in some number of the layers, and 5 is light. By providing the solar batteries 4 in the inside of the laminated structure such as this, interlayer electric connecting parts become few and the number of the wirings is decreased. Since a memory machine is not required because of the provision of the layer 3, the element can be used at any place where light is present. Said solar battery 4 need not necessarily be provided in each layer, but it can be provided at least in one layer.

Description

【発明の詳細な説明】 この発明は積層構造の半導体集積回路素子において、少
なくとも一つの層に太陽電池を設けることによって電源
を供給するようにした半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit element having a stacked structure, in which a solar cell is provided in at least one layer to supply power.

積層構造の半導体集積回路素子を構成する際各層間の配
線を形成する−が最も困難である。各層間の配線には電
源の配線と各層間の信号の伝達配線とがある。このうち
電源の配線は各層又はいくつかの層に太ｗＪＷｔ池を設
ける事によって１層内の配線のみで１層間の配線が必要
なくなり、配線が絃らせる参になる。When constructing a semiconductor integrated circuit element having a stacked structure, the most difficult task is to form interconnections between each layer. The wiring between each layer includes a power supply wiring and a signal transmission wiring between each layer. For the power supply wiring, by providing a thick wJWt cell in each layer or several layers, the wiring between the layers is not necessary because only the wiring is within one layer, and the wiring becomes more efficient.

以下、この発明の実施例を図について説明する。Embodiments of the present invention will be described below with reference to the drawings.

第１図において、（１）〜（３）は積層構造の半導体集
積回路の各層、例えば（１）は光電変換素子をＨするイ
メージ七ンサー／ｄ、（２）は論理機能を有する層、（
３）は記憶機能を有する層、（４）は各層又はそのうち
のい（つかの層において、太陽電池機能を有する部分、
（５）は光（例えば太陽光、又は蛍光灯から？りらｎる
）である。In FIG. 1, (1) to (3) are each layer of a semiconductor integrated circuit with a stacked structure, for example, (1) is an image sensor/d for H photoelectric conversion elements, (2) is a layer having a logical function, (
3) is a layer having a memory function; (4) is a portion having a solar cell function in each layer or some of the layers;
(5) is light (for example, from sunlight or fluorescent lights).

このように積層構造の内部に太ｉｘ池（４）を備える事
により各層間の電気的接続部が少なくなり配線の数も減
少する。又、電源が必要ない事からこの素子を光が存在
する場所ならばいかなる場所においても使用できる。In this way, by providing the thick IX pond (4) inside the laminated structure, the number of electrical connections between each layer is reduced, and the number of wirings is also reduced. Additionally, since no power source is required, this device can be used anywhere where light is present.

なお、この太陽電池（４）は必ずしも各層に設ける必要
はなく、少なくとも一つの層に設けるものであってもよ
い。Note that this solar cell (4) does not necessarily need to be provided in each layer, and may be provided in at least one layer.

【図面の簡単な説明】[Brief explanation of the drawing]

図はこの発明の一実施例を示す半導体装置の断面図であ
る。内申（υはイメージセンサ層、（２〕は論ｍｍ能層
、（３１）ハ記憶機能層、（４）ハ太ｌｉ＃！ｌｖｔ池
、（５）ハ光源である。 代地人　ｓｔｈ信−The figure is a sectional view of a semiconductor device showing an embodiment of the present invention. (υ is the image sensor layer, (2) is the logic layer, (31) is the memory function layer, (4) is the light source, (5) is the light source.

Claims (1)

【特許請求の範囲】 積層構造の半導体集積回路素子において、その中の一層
又は複数の層において太陽電池を具備し。 電圧を流を各層に供給する事により、各層間の電源の配
線を減らす事を特徴とする半導体装置。[Scope of Claim] A semiconductor integrated circuit device having a stacked structure, comprising a solar cell in one or more layers thereof. A semiconductor device characterized by reducing power supply wiring between each layer by supplying voltage and current to each layer.
JP56194715A 1981-11-30 1981-11-30 Semiconductor device Pending JPS5895874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56194715A JPS5895874A (en) 1981-11-30 1981-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194715A JPS5895874A (en) 1981-11-30 1981-11-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5895874A true JPS5895874A (en) 1983-06-07

Family

ID=16329037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194715A Pending JPS5895874A (en) 1981-11-30 1981-11-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5895874A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483386A (en) * 1977-12-15 1979-07-03 Matsushita Electric Ind Co Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483386A (en) * 1977-12-15 1979-07-03 Matsushita Electric Ind Co Ltd Semiconductor device

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