JPS589234A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JPS589234A JPS589234A JP56107036A JP10703681A JPS589234A JP S589234 A JPS589234 A JP S589234A JP 56107036 A JP56107036 A JP 56107036A JP 10703681 A JP10703681 A JP 10703681A JP S589234 A JPS589234 A JP S589234A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- optical information
- information recording
- melting point
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24328—Carbon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光、熱等のエネルギービームの照射によ〉記録
層に穴もしく５、は凹部、を形成することによ唯て情報
を可働するよう、ＫＬ九光学的情報記記録体に係〉、轡
、ｌＩｃ感度の向上及び長寿命化を図、つた光学的情報
記録媒体、に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for activating information only by forming holes or recesses in the recording layer by irradiation with an energy beam such as light or heat. The present invention relates to an optical information recording medium that has improved sensitivity and extended life.
基板上に形成された薄膜層にエネルギービームを照射し
記録されるべき１、信号に対応したビット列を形成する
ようにした光学的情報記録媒体において、従来よ避紀碌
薄膜としてテルル（Ｔ・）、ビスマス（Ｂｉ）、！！鉛
（ム）等の低融点金属を使用することが知られている０
これらの金属薄膜は、低いエネルギーで所望のビットを
形成できるため、この種用途においては高感度材料とし
て有望である。こむで感度とは単位面積轟シのビット形
成Ｋｌｌするエネルギー（ｗ／ｃｄ ）で定義される。In an optical information recording medium in which a thin film layer formed on a substrate is irradiated with an energy beam to form a bit string corresponding to a signal to be recorded, tellurium (T) is used as a conventional thin film. , bismuth (Bi),! ! It is known that low melting point metals such as lead are used.
These metal thin films can form desired bits with low energy, so they are promising as highly sensitive materials for this type of application. The sensitivity is defined as the energy (w/cd) for bit formation per unit area.
しかしながらこれらの低一点金属は大気中に放置された
場合、酸素中水分によシ酸化し中すく。However, when these low single point metals are left in the atmosphere, they are oxidized by moisture in oxygen and become obsolete.
膜表面Ｋｌｌ化物が形成されて感度が劣化する。たとえ
ばＴ・や８１においてろこれらを７０℃、相対温［８８
慢の雰囲気に放置した場合、約５時間で感度が約２０−
低下し、約腸時間で約５０１低下してしまう。このため
Ｔ＠属上に有機保−属をコーテイ／グする等の手段がと
られているが、未九十分な寿命は得られていない０
本発明はこのような問題点に鑑みなされたもので、高感
度でかつ長寿命の光学的情報記録媒体を提供することを
目的とする。KII compounds are formed on the film surface and the sensitivity deteriorates. For example, filter them at 70°C at T.ya81, relative temperature [88
If left in a harsh atmosphere, the sensitivity will drop to about 20-20% in about 5 hours.
It decreases by about 501 points in about an hour. For this reason, measures have been taken to coat/glue organic carriers on the T@ genus, but a sufficient lifespan has not been achieved.The present invention was created in view of these problems. The purpose is to provide an optical information recording medium with high sensitivity and long life.
本発明の光学的情報記録媒体は、記ｉ＆属を低融点金属
、炭素及び水素を含有する薄膜で形成したことを特徴と
し、これによって高感度と長寿命とを兼ね備えたもので
ある。The optical information recording medium of the present invention is characterized by being formed of a thin film containing a low melting point metal, carbon, and hydrogen, and thereby has both high sensitivity and long life.
以下図面を参照して本発明の実施例につき詳細に説−す
る。嬉１図は本発明の一実施例を示す断面構成図である
。Embodiments of the present invention will be described in detail below with reference to the drawings. Figure 1 is a cross-sectional configuration diagram showing an embodiment of the present invention.
１１において（１）は基板で、本実施例では合成樹脂の
１つであるアクリル板が用いられる。しかしこの他にも
プラスチック中ガラス基板であってもよく、情報紀鍮の
読み出し方法によって適宜選択し得る。（１１）はＣ及
びＨを含有する低一点金属１Ｉｌｊ［で２６’０〜・Ｏ
Ｏυの融点を有し、その厚さは、十分な光反射率を得る
１度Ｋｊｌ＜、かつ感度を損なわない程ＩＥＫ薄いこと
が必要で、５ｏｏ１〜１μｍ一度が適轟である。ζζで
低融点金属としてはＴ―１組、ｚａＣｄ、Ｉ町ｍｂ、Ｐ
ｂ、８ｔｒなどもしくはその含金が使用されＣＩＬびＨ
を含む低融点金属としてテ・を例にとると、！・をター
ゲットとし、Ｃを含む有機オス例えば、−ＣＨａ中Ｃ５
Ｈｓガスとムｒとの１金ガス中でスパッタすることによ
〉Ｃ及びＨを會むＴ・薄膜が得られる。In 11, (1) is a substrate, and in this embodiment, an acrylic plate, which is one of synthetic resins, is used. However, in addition to this, a plastic-in-glass substrate may be used, and the substrate may be appropriately selected depending on the information readout method. (11) is a low single point metal 1Ilj containing C and H [with 26'0~・O
It has a melting point of Oυ, and its thickness needs to be 1°Kjl<1° to obtain sufficient light reflectance and IEK thin enough not to impair sensitivity, and a thickness of 5oo1 to 1 μm is suitable. The low melting point metals in ζζ are T-1 group, zaCd, I-cho mb, and P.
b, 8tr, etc. or its metal content is used for CIL and H
Taking Te as an example of a low melting point metal containing ! - Targeting organic males containing C, e.g., C5 in -CHa
By sputtering in a single gold gas containing Hs gas and hydrogen, a T thin film in which C and H meet can be obtained.
すなわちＴ−薄膜中のＣ及び°Ｈの含有量はムｒと０１
４（又はＣｆｆ１ｍ）との混合比を変えることによ）制
御でき、例えばＡｒ／ＣＨ４Ｗ １のときには％ Ｔｅ
１−ｘｃｘ（Ｈ）と表記した場合約４０原子−のＣを含
有させることかで自、また原子数比でＣに対し３＠度の
Ｈを含有させることができる。尚、Ｔｅ以外１ｃＺａ、
ＣもＩｎ。That is, the content of C and °H in the T-thin film is equal to mr and 01
4 (or Cff1m)), for example, when Ar/CH4W is 1, %Te
When expressed as 1-xcx(H), by containing about 40 atoms of C, it is possible to contain 3 degrees of H to C in the atomic ratio. In addition, other than Te, 1cZa,
C is also In.
８ｂ、Ｐｂ等の低融点金属をターゲットとし、 ＣＨａ
あるいはＣ出３ガスとＡｒとの混合ガス中でス／４ツタ
する□ことによシ、中は）Ｃ及びＨを含有する低融点金
属薄膜を得ることかで自る。Targeting low melting point metals such as 8b and Pb, CHa
Alternatively, it is possible to obtain a low melting point metal thin film containing C and H by immersing it in a mixed gas of C3 gas and Ar.
一方相あるいは８ｎにおいては、これらの低一点金属を
ルツボ又は＆−）Ｋ入れて国４ガスとムｒガスの混合ガ
ス中（ＩＦ”Ｔｏｒｒ）で加熱蒸発させ、基板と蒸発源
との間に予め電界を加えてにスをイオン化させておくこ
とによ〉ＣとＨを゛′省有す４低融点金属薄属を得るこ
とができる。例えばＢｉの□場合□ムｔ／ＣＨａ ＝
１でかつ約ｓｏｅνのイオンを与えることによ）、約Ｉ
′原子参のＣと□、原子数比ＣＫ対し３１１度のＨとを
含有する引薄膜を得ること□がで自るンこのようにして
形成されるＣ及びＨな含有するｌ！融点金属薄膜におけ
る光学定数は、ＣとＨとの含有量によって異なｐ、情報
紀鑞用として活用するには、反射率ならびに消衰係数を
考直して膜厚を決定する必要する必要がある。実験の結
果２００１〜ｌｓ−の範囲が適崗で、約１ｏｏｏｌのと
龜に最良であることが判った。そして上記条件で形成し
た膜は非晶質であ）％低融点金属単体で形成し九麟に比
べて、記録状態のピット周辺エッヂ部がなめらかとな１
、情報読み出し時のノイズレベルを低くおさえ得基こと
が判明した。On the other hand, in the phase or 8n, these low single point metals are placed in a crucible or &-)K and heated and evaporated in a mixed gas of 4 gases and MR gas (IF" Torr), and the metals are placed between the substrate and the evaporation source. By applying an electric field in advance to ionize the gas, it is possible to obtain a 4-low melting point metal thin metal that eliminates C and H.For example, in the case of Bi, t/CHa =
1 and about soeν), about I
'It is possible to obtain a thin film containing C and □ in the atomic ratio, and H with an atomic ratio of 311 degrees to CK.The C and H containing l! formed in this way can be obtained. The optical constants of a melting point metal thin film vary depending on the content of C and H. In order to utilize the film for information purposes, it is necessary to reconsider the reflectance and extinction coefficient in determining the film thickness. As a result of experiments, it was found that a range of 2001 to ls- is suitable and is best for a diameter of approximately 100 mm. The film formed under the above conditions is amorphous, and the edges around the pits in the recorded state are smoother than those formed from a single low-melting point metal.
It has been found that the noise level during information reading can be kept low.
次にこのようにして形成されたＣ及びＨを含有する”低
融点金属薄膜中のＣとＨの含有量の最適値１１につ−で
説明する。まずＣＫついては、Ｔ・；−８Ｃｘ（Ｈ）と
表記した場合、５〜４０原子−〇含有量であることが好
ましい。これＦｉｓ原子−以下であると後述する寿命の
点で低融点金属単体で形成した記録膜との有意差がみら
れなくなるためであ）、ま九４０原子−以上になると後
述する感度の点で不十分なものになるためである。次Ｋ
ＨＫついては所望の感度を有する記録膜を作製した後に
その記録膜を真空中で放出ｊス分析を行りた結果Ｑｉｍ
の存在が確認されたところから、Ｈの含有量は原子数比
でＣに対しｍ６度が好ましいことが推欄で自る。このよ
うなＣ及びＨを所定量含有する本発明の低融点金属紀鍮
属が感度、寿命共に優れていることにつき以下に詳述す
る。Next, the optimal value 11 of the content of C and H in the low melting point metal thin film containing C and H formed in this way will be explained. First, regarding CK, T. ), it is preferable that the content is 5 to 40 atoms.If the content is less than Fis atoms, there will be a significant difference in the lifespan described later from a recording film formed of a low melting point metal alone. This is because if the number of atoms exceeds 40 atoms, the sensitivity will be insufficient as described below.Next K
For HK, after producing a recording film with the desired sensitivity, the recording film was released in a vacuum and analyzed, resulting in Qim.
Since the existence of H was confirmed, the recommendation column shows that the content of H is preferably m6 degrees relative to C in terms of atomic ratio. The fact that the low melting point metal of the present invention containing such C and H in predetermined amounts is excellent in both sensitivity and life will be explained in detail below.
第２図（１１〜（→は有機ガスとしてα４を用い、ガス
混合比すなわちムｒ ／ＣＨａをθ〜１００と変化させ
１．５謹厚のアクリル基板（１）ＫＣ及びＨを含有する
Ｔ・薄膜をスパッタによ〕形成し、得られ九７００１種
度の記録膜についての緒特性を示したものである。Figure 2 (11-(→) uses α4 as the organic gas and changes the gas mixture ratio, that is, mr/CHa, from θ to 100. The thin film was formed by sputtering, and the characteristics of the resulting 97001-grade recording film are shown.
−において横軸はスパッタ中のガス混合比、縦軸は光吸
収、Ｇｉ４１００−で得られた薄膜の呻性値で規格化し
た膜形成速度（膜形成速度比）ＪＬび感度の逆数比（感
度比）を各々示す。ζζで単位体積のｌＩＩ＆に吸収さ
れる光エネルギーは、薄膜の屈折率をｎ、消衰係数をｋ
とすると、２ａｋ ｌｆ：比例する。In -, the horizontal axis is the gas mixture ratio during sputtering, the vertical axis is light absorption, the film formation rate (film formation rate ratio) normalized by the resistance value of the thin film obtained with Gi4100-, and the reciprocal ratio of the sensitivity (sensitivity). ratio) are shown respectively. The optical energy absorbed by unit volume lII& of ζζ is given by the refractive index of the thin film as n and the extinction coefficient as k.
Then, 2ak lf: Proportional.
第２図でわかるように光吸収（２ｎｋ ）は混合ガス中
のＡｒが増加するにつれて増大するが、膜形成速度及び
感度は共Ｋ １Ｇ ％ ＝程度の変化におさまっている
Ｃそして感度について着目すると、９２図（Ｃ） Ｋ示
すようにガス混合比の広い範囲にわ九ってほぼ等しい値
をとっておシ、かつこの値は、アクリル基板上Ｋ ４０
０ム程度の純Ｔ・薄膜を形成した場合の感度に相轟し、
本発明の記録媒体が高感度を有することを示している。As can be seen in Figure 2, the optical absorption (2nk) increases as the Ar content in the mixed gas increases, but the film formation rate and sensitivity both remain within the range of K 1G % = C and sensitivity. As shown in Figure 92 (C), K takes approximately the same value over a wide range of gas mixture ratios.
The sensitivity when forming a thin film of pure T with a thickness of about 0 μm was greatly improved.
This shows that the recording medium of the present invention has high sensitivity.
ここで第２図（→、第２図（Ｃ）における人ｒ／Ｃ■４
がＯ〜１０−の間の場合は光吸収及び感度が減少してい
るが、これは上述し九〇の量が鉛原子−以上の場合に相
幽し、記録膜゛が透明に近づき記録の為のエネルギービ
ームの照射を強くする必豊かある丸め、この範囲は好ま
しくない。Here, in Figure 2 (→, person r/C in Figure 2 (C) ■4
When the amount of lead atoms is between 0 and 10-, the light absorption and sensitivity decrease, but this is counteracted when the amount of lead atoms is more than 90-, as mentioned above, and the recording film becomes transparent and recording becomes difficult. This range is undesirable because it is necessary to strengthen the energy beam irradiation.
尚、第２図（→〜（→に示した特性はＴｅ以外の低融点
金属（引、Ｚｎ、Ｃｄ、Ｉｓ、１ｉｉｂ、Ｐｂ、８ｎ
）及び引３Ｔ・３゜Ｉｎ８ｂ４等の含金についても、は
ぼ同じ傾向がｓｉｉ！された。In addition, the characteristics shown in Figure 2 (→ to (→)
) and the metal content of 3T, 3゜In8b4, etc. have almost the same tendency sii! It was done.
第３図は７０℃、相対温度８５９Ｇの雰囲気中での時
−関経過に対する感度の劣化を、従来のテ・単体°の
ものと、ＣをＷ〜あ原子−１Ｈを原子数比でＣに対して
はぼ３倍含有するＴｅ記録膜とで比軟した図である０本
図における感度の劣化は、記録に必費なエネルギーの逆
数の初期値に対する変化として表わしており、Ｔｅｌ単
体からなる従業の記録膜１本発明による記録膜共にアク
リル基板上に形成され九場合を示す。本図かられかるよ
うにＴ１１単体からなる記録膜の場合は図中（Ａ）で示
すように時間経過とともに感度が劣化する。これは時間
とともに局部的な透明領域（シミ）が発生するためで、
約１７０時間経過後には全面にわ九って劣化してしまう
。Figure 3 shows the case in an atmosphere of 70℃ and relative temperature of 859G.
- The deterioration of the sensitivity to the relationship between the conventional Te and the Te recording film, which contains about three times as much C as W~A atom-1H in terms of atomic ratio, has been improved. The deterioration in sensitivity in this figure is expressed as a change with respect to the initial value of the reciprocal of the energy required for recording. Indicates nine cases. As can be seen from this figure, in the case of a recording film made of T11 alone, the sensitivity deteriorates over time as shown in (A) in the figure. This is because localized transparent areas (stains) occur over time.
After approximately 170 hours, the entire surface cracks and deteriorates.
−万事発明によるＣ及びＨを含有するＴ・薄膜の場合は
、同図中（呻で示すようＫ １０００時間経過後もＴ・
薄ＩＮＫ見られたようなシミは全く認められず、常Ｋｉ
ｔぼ一定の感度責保持してお）、長寿命化を達成してい
ることがわかる。- In the case of the T thin film containing C and H according to the invention, even after 1000 hours of K as shown in the same figure (as shown by the groan)
There are no stains like those seen with light INK, and it is always clean.
It can be seen that the sensor maintains a constant sensitivity and has a long life.
＃Ｉ４図（ａ） 、 （ｂ）は低融点金属としてＴ・を
例にとシこれにＣを５〜４ｏ原子優、Ｈを原子数比でＣ
Ｋ対して約３倍含有する記録膜をＮ２中で示差熱分析を
行った結果を示し、（Ｉ４は温度に対応した重量変化（
ｂ）は温度に対応し良熱変化を示す。#I4 Figures (a) and (b) take T as an example of a low melting point metal, with C in the atomic ratio of 5 to 4 o, and H in the atomic ratio of C.
The results of differential thermal analysis in N2 are shown for a recording film containing about 3 times as much K as (I4 is the weight change corresponding to temperature (
b) corresponds to temperature and shows a good thermal change.
これらの図からもわかるように１４０℃付近で結晶化に
よる発熱ピークと分解が観測され、さらに温度を上けて
４４３ ”０では融点を示す吸熱が見られる。こむで前
述のように放出ガス分析の結果、Ｔ＠ｍ（ＣＨｓ）ｍの
形態でガス放出があることが確認されているため、第４
図における１４０℃付近で生ずる分解によって、ＣＨｓ
基を會む蒸気圧の高いガスが放出されていることがわか
る
そしてこのようにＣＨｓ基を含むガスが放出して分解後
結晶化された記録膜は実質的にはＴ＠単体の薄膜Ｋｆｌ
めて近い状■あると考えられるので、これが本発明の紀
鍮属が高感度である理由となる。As can be seen from these figures, an exothermic peak due to crystallization and decomposition are observed at around 140°C, and when the temperature is further increased to 443'0, an endotherm indicating the melting point is observed. As a result, it has been confirmed that gas is released in the form of T@m(CHs)m, so the fourth
CHs
It can be seen that a gas with a high vapor pressure that meets the CHs group is released, and the recording film that is crystallized after the gas containing the CHs group is released and decomposed is essentially a thin film of T@ simple substance Kfl.
This is considered to be a very similar condition, and this is the reason why the present invention has a high sensitivity.
ここでＨの存在は蒸気圧の高い分解ガス生成（ＣＨｓ″
基）Ｋ寄与し、これによつズ属の分解温度を下げる役割
を呆九している。ま九テ・原子ＫＨ４−Ｃが結合するこ
とによＪ） ＨｉＯ中０１がＴ・と結合するのを賭止し
ていると考えられ、その結果本発明による記録膜が化学
的に安定で酸化しに（（なっているものと考えられる。Here, the presence of H is responsible for the production of cracked gases with high vapor pressure (CHs″
group) K, which plays a role in lowering the decomposition temperature of the genus. It is thought that the bonding of the KH4-C atoms in J) HiO prevents the bonding of 01 with T, and as a result, the recording film according to the present invention is chemically stable and oxidized. (It is thought that it has become.
崗１分析結兼はＣ及びＨを所定量含有する！・属につい
てのみ示したが、先に列挙し九個の低融点金属及びそれ
らの合金についてもはは同じ傾向を示す。Granule 1 analysis Yuikane contains a certain amount of C and H!・Although only the genus is shown, the same tendency is shown for the nine low-melting point metals listed above and their alloys.
以上詳しく説明したように本発明によれば感度寿命共に
優れ九４Ｉ法を有する記録層を提供することができ、そ
の結果基板として水分中酸素を通しやすいアクリル基板
、プラスチック基板等を用いることができる丸め、安価
でかつ量産−に優れた光学的情報記録謀体とすることが
できる。As explained in detail above, according to the present invention, it is possible to provide a recording layer that has excellent sensitivity life and uses the 94I method, and as a result, an acrylic substrate, a plastic substrate, etc. that easily allows oxygen in moisture to pass through can be used as the substrate. This makes it possible to create an optical information recording system that is inexpensive and suitable for mass production.
第１図は本発明の一実施例を示す断面構成図。
第２図（Ｑ〜（→は本発−による記録層のガス混合比に
対するＭ特性を示す図で、（姉は光１ｋＩＩＩＬを、（
呻は膜形成速度比を、（→は感置比を各々示す図、第３
ＦｊＡは本発明による紀鎌属と従来の記録層との寿命に
ついての比較図、＃Ｉ４図（荀、（ｂ）は本発明による
記録層の温度に対する緒特性を示す図で（→は重量変化
、（→は熱変イビを示す図である。
（１）・・・基板、（２ト・・Ｃ及びＨを含有する低融
点金属記録膜。
代理人 介珊士 則 近 盾 佑（ほか１名）第１図
１’ ／／ ｈ ＤＩ ４＃ ３１６６７１’ ｌｉｄ
ｆ／ ／ｍｅｌｔ ％Ｈ。
第８図
第４図
手続補正書（自発）
昭和 年 月 日
５７．１．１３
特許庁長官島田春樹殿
１、事件の表示
昭和５６年特願第１０７０３６号
２、発明の名称
光学的情報記龜媒体
３、補正をする者
事件との関係 特許出願人
（３０７）東京芝浦電気株式会社
明細書の「発明の詳細な説明」の橢
及び図面の第２１１１．第４図
（１）明細書第３頁＠１２行目の「おいてろ」を「おい
ては」と訂正する。
（２）第５頁第４行目の「人ｒ７ｃＨ４＝ ｔのときは
、」を「人ｒ／ＣＨ４＝ ０のときは、」と訂正する〇
（３）同頁第８行目の「Ａｒ、／ＣＨ４＝ １で」を「
人ｒ／ＣＨ４＝０で」と訂正する〇
（４）第６頁第５行目の「決定する必要する必要がある
０」を「′決定する必要がある。」と訂正する。
（５）同頁第８行目の「単位」を「単体」と訂正する０
（６）第７頁第２行目のｒｃＨｓＪを「ＣＨ３基」と訂
正する。
（７）同頁第９行目の「Ｏ〜１００ Ｊを「θ〜１」と
訂正する。
（８）第８頁第５行目の［４００Ａ Ｊを「４００Ｘ」
と訂正する。
（９）同頁第８行目乃至第１３行目の「ここで・・・好
ましくない。」を次のように訂正する。
「ここで第２図におけるＡｒ／ＣＨ４が０のときはＣの
量が約４０原子うに相轟するが、第２図０から４推測で
きるようにＣの量が４０原子％よ＃）４１多くなると感
度が徐々に低下していき記録膜が透明に近づいていくた
め、ｉ己録の為のエネルギービームの照射を強くする必
要が生じてくる。従ってＣの量は４０％以下であること
が好ましい。」四第９頁第１行目の「はぼ３倍」を「は
ぼ３倍（詳しくは１〜４倍）」と訂正する。
αυ図面中第２図及び第４図を別紙のとうり訂正する。
以上
第２−
第４図
手続補正書（自発）
姉晶、、、％Ｏａ
特許庁長官 若 極相 大股
１、 事件の表示
昭和５６年特鵬第１０７０３６号
２、発明の名称、
光学的情報記録媒体
３、補正をする看
事件との関係 特許出願人
（３０７）東京芝浦電気株式会社
４、代理人
〒１００
東京都千代田区内幸町１−＄−６
６、補正の内容
（１）特許請求の範囲を別紙のどう一ノ補正する。
（２）明細書第２頁第１５行目の「凹部」を「例え゛ば
凹部等の変形部」と訂正する。
以上
特許請求の範囲
（１） 基板上に記録膜を形成し、この記録膜にエネ
ルギービームな照射すること鑑＝よって記録膜に穴もし
くは変形部を形成して情報を記録するようにした光学的
情報記録媒体（二おいて、前記記録膜を低融点金属、炭
素及び水−を含む薄膜で形成したことを特徴とする光学
的情報記録媒体。
（２）低融点金属はテルル、ビスマス、亜鉛、カドミウ
ム、インジウム、アンチモン、鉛、錫のうちのいずれか
、もしくはこれらのうちの複数からなる合金であること
を特徴とする特許請求の範囲第１項記載の光学的情報記
録媒体。
（３）合金は２５℃乃至６００℃の融点を有することを
特徴とする特許請求の範囲第２項記載の光学的情報記録
媒体。
（４）炭素及び水素は炭化水素基として含有されている
ことを特徴とする特許請求の範囲第１項記載の光学的情
報記録媒体。
（５）記録膜中の炭素の含有量は５乃至４０原子鴨で、
水素の含有量は原子数比で炭素に対しほぼ３であること
を特徴とする特許請求の範囲第１項記載の光学的情報記
録媒体。
（６）記録膜は非晶質であることを特徴とする特許請求
の範囲第１項記載の光学的情報記録媒体。
（７）記録膜の厚さは２００Ａ乃至１．ｍであることを
特徴とする特許請求の範囲第１項記載の光学的情報記録
媒体。
（８） 基板はガラスもしくは合成樹脂であることを
特徴とする特許請求の範囲第１項記載の光学的情報記録
媒体。FIG. 1 is a cross-sectional configuration diagram showing one embodiment of the present invention. Figure 2 (Q~(→ is a diagram showing the M characteristics with respect to the gas mixture ratio of the recording layer according to the present invention).
Moaning indicates the film formation rate ratio, (→ indicates the sensing ratio, 3rd figure)
FjA is a comparison diagram of the lifespan of the recording layer according to the present invention and a conventional recording layer, and Figure #I4 (Xu) is a diagram showing the temperature-related characteristics of the recording layer according to the present invention (→ indicates weight change). (→ is a diagram showing thermal change. Name) Figure 1 1' // h DI 4# 316671' lid
f/ /melt %H. Figure 8 Figure 4 Procedural Amendment (Spontaneous) January 13, 1939 57.1.13 Director General of the Japan Patent Office Haruki Shimada1, Indication of the case, 1982 Patent Application No. 1070362, Name of the invention Optical information recording Media 3, Relationship with the case of the person making the amendment Patent applicant (307) Tokyo Shibaura Electric Co., Ltd. Description of the "Detailed Description of the Invention" in the specification and No. 2111 of the drawings. Figure 4 (1) "Otero" on page 3 of the specification @ line 12 is corrected to "Oeteha". (2) Correct “When r7cH4=t” on the 4th line of page 5 to “When r/CH4=0” (3) Correct “Ar” on the 8th line of the same page. , /CH4=1” is changed to “
〇(4) On page 6, line 5, "0" should be corrected to "'need to be determined." (5) Correct “unit” in the 8th line of the same page to “single substance” 0 (6) Correct rcHsJ in the 2nd line of the 7th page to “CH3 group”. (7) Correct "O~100 J" on the 9th line of the same page to "θ~1". (8) On page 8, line 5, change 400A J to “400X”
I am corrected. (9) "This is not desirable." in lines 8 to 13 of the same page is corrected as follows. ``Here, when Ar/CH4 in Figure 2 is 0, the amount of C is about 40 atoms, but as we can infer from 0 in Figure 2, the amount of C is 40 at%. As the sensitivity gradually decreases and the recording film approaches transparency, it becomes necessary to strengthen the energy beam irradiation for self-recording.Therefore, the amount of C should be 40% or less. It is preferable.'' In the first line of page 9 of the fourth page, ``Habo 3 times'' is corrected to ``Habo 3 times (more specifically, 1 to 4 times)''. Figures 2 and 4 in the αυ drawings are corrected as attached. The above 2-4 Procedural Amendment (Voluntary) Aneaki...,%Oa Commissioner of the Patent Office Wakayokuso Omata 1, Indication of the case, Tokuho No. 107036 of 1982, 2, Title of invention, Optical information Recording medium 3, Relationship with the case for which the amendment is made Patent applicant (307) Tokyo Shibaura Electric Co., Ltd. 4, Agent 1-$-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100 6. Contents of the amendment (1) Patent claim Correct the range as shown in the attached sheet. (2) "Recessed portion" on page 2, line 15 of the specification is corrected to "deformed portion, such as a recessed portion." Claims (1) A recording film is formed on a substrate and the recording film is irradiated with an energy beam. Therefore, an optical system in which information is recorded by forming holes or deformed portions in the recording film. Information recording medium (2) An optical information recording medium characterized in that the recording film is formed of a thin film containing a low melting point metal, carbon and water. (2) The low melting point metal is tellurium, bismuth, zinc, The optical information recording medium according to claim 1, characterized in that it is an alloy consisting of one or more of cadmium, indium, antimony, lead, and tin. (3) Alloy has a melting point of 25°C to 600°C. (4) The optical information recording medium is characterized in that carbon and hydrogen are contained as hydrocarbon groups. The optical information recording medium according to claim 1. (5) The carbon content in the recording film is 5 to 40 atoms,
2. The optical information recording medium according to claim 1, wherein the content of hydrogen is approximately 3 to that of carbon in terms of atomic ratio. (6) The optical information recording medium according to claim 1, wherein the recording film is amorphous. (7) The thickness of the recording film is 200A to 1. The optical information recording medium according to claim 1, wherein the optical information recording medium is m. (8) The optical information recording medium according to claim 1, wherein the substrate is made of glass or synthetic resin.
Claims (1)
ネルギービームを照射することによって記録層に穴もし
くは凹部を形成して情報を記−するようにした光学的情
報記＃に媒体において、前記岬鍮属を低融点金属、炭素
及び水素を含む薄膜で形成したことを特徴とする光学的
情報記録媒体。、（２）低融点金属はテルル、、ビスマ
ス、亜鉛、カドンクム、インジウム、アンチモノ、鉛、
錫のうちのいずれか、もしくはこれらのうちの複数から
なる合金であることを４＋１黴・とする特、、許請求の
＠置薬１項記載の光学的情報記録媒体。 （３）合金はＳ”Ｏ乃ｊｉ６０Ｇ℃の、融点を有、する
ことを特徴とする特許請求の範囲第２項記載の光学的情
報記録媒体。 ・（４）炭素及び
水素は炭化水素基として含有されていることを特徴とす
る特許請求の範囲第１．３Ｊ［記載の光学的情報記−媒
体〇 （５）ｍｅ鍮属中の炭素の含有量は５乃至４ｏＸ子−で
水素の含有量は原子数比で炭素に対しほぼ３であゐこと
を特徴とする特許請求の範囲第１項記載の光学的情報記
録媒体。 （６）記録層は、非晶質であることを特徴とする特許請
求のｌ［ＩＩ嬉１項記載の光学的情報記録媒体。 （７）記録層の厚さはｚｏｏ Ｘ乃至１μｍであること
を特徴とする１１！＃杵請求の範Ｓａｔ項記載の光学的
情報記録媒体。 （８）基１！拡ガラス、もしくは合、成樹脂であること
を特徴とする特許請求の範囲第１項記載の、光学的情報
記鍮媒体。[Claims] (1) Information is recorded by forming holes or recesses in the recording layer by irradiating it with a K energy beam. 1. An optical information recording medium, characterized in that the misaki metal is formed of a thin film containing a low melting point metal, carbon, and hydrogen. (2) Low melting point metals are tellurium, bismuth, zinc, cadoncum, indium, antimono, lead,
The optical information recording medium according to claim 1 of the patent claim, wherein the optical information recording medium is one of tin or an alloy consisting of a plurality of tin. (3) The optical information recording medium according to claim 2, characterized in that the alloy has a melting point of 60 G°C. (4) Carbon and hydrogen are used as hydrocarbon groups. Claim 1.3J [Optical information storage medium 〇(5) me Brass has a carbon content of 5 to 4 oX atoms and a hydrogen content of] The optical information recording medium according to claim 1, wherein the atomic ratio of carbon to carbon is approximately 3. (6) The recording layer is amorphous. (7) The optical information recording medium according to claim 1, characterized in that the thickness of the recording layer is between 1 μm and 1 μm. Information recording medium. (8) The optical information recording medium according to claim 1, which is made of expanded glass, synthetic resin, or synthetic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107036A JPS589234A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56107036A JPS589234A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS589234A true JPS589234A (en) | 1983-01-19 |
| JPS6327778B2 JPS6327778B2 (en) | 1988-06-06 |
Family
ID=14448886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56107036A Granted JPS589234A (en) | 1981-07-10 | 1981-07-10 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589234A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59160841A (en) * | 1983-03-04 | 1984-09-11 | Toshiba Corp | Optical recording medium film |
| EP0335275A2 (en) * | 1988-03-31 | 1989-10-04 | Kabushiki Kaisha Toshiba | Information storage medium |
| US4929485A (en) * | 1988-02-01 | 1990-05-29 | Kabushiki Kaisha Toshiba | Information storage medium and method of manufacturing the same |
| JPH0420852U (en) * | 1990-06-14 | 1992-02-21 | ||
| US6416929B2 (en) | 1997-10-17 | 2002-07-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Memory member |
| US8124211B2 (en) | 2007-03-28 | 2012-02-28 | Ricoh Company, Ltd. | Optical recording medium, sputtering target, and method for manufacturing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107647578A (en) * | 2017-07-17 | 2018-02-02 | 东莞集思工业设计有限公司 | A kind of knapsack with heat sinking function |
| JP7373180B2 (en) * | 2019-06-24 | 2023-11-02 | 株式会社セフト研究所 | infant cooling device |
| KR102530135B1 (en) * | 2021-08-24 | 2023-05-10 | (주)대성파인텍 | Tunnel structure type flexible duct and back including the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627395A (en) * | 1979-08-14 | 1981-03-17 | Nippon Telegr & Teleph Corp <Ntt> | Recording medium and preparation thereof |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
-
1981
- 1981-07-10 JP JP56107036A patent/JPS589234A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627395A (en) * | 1979-08-14 | 1981-03-17 | Nippon Telegr & Teleph Corp <Ntt> | Recording medium and preparation thereof |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59160841A (en) * | 1983-03-04 | 1984-09-11 | Toshiba Corp | Optical recording medium film |
| JPH0441056B2 (en) * | 1983-03-04 | 1992-07-07 | Tokyo Shibaura Electric Co | |
| US4929485A (en) * | 1988-02-01 | 1990-05-29 | Kabushiki Kaisha Toshiba | Information storage medium and method of manufacturing the same |
| EP0335275A2 (en) * | 1988-03-31 | 1989-10-04 | Kabushiki Kaisha Toshiba | Information storage medium |
| JPH0420852U (en) * | 1990-06-14 | 1992-02-21 | ||
| US6416929B2 (en) | 1997-10-17 | 2002-07-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Memory member |
| US8124211B2 (en) | 2007-03-28 | 2012-02-28 | Ricoh Company, Ltd. | Optical recording medium, sputtering target, and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327778B2 (en) | 1988-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6761950B2 (en) | Information recording medium and method for producing the same | |
| EP0062975B1 (en) | Optical recording medium | |
| EP0195532B1 (en) | An information recording medium | |
| JP2990036B2 (en) | Optical recording medium and manufacturing method thereof | |
| US7014903B2 (en) | Optical recording medium | |
| US7291375B2 (en) | Phase-change optical recording medium | |
| KR100709931B1 (en) | Information recording medium and process for producing the same | |
| EP1414029A2 (en) | Optical recording medium and method for manufacturing the same | |
| EP1657071A1 (en) | Recording medium | |
| JPS589234A (en) | Optical information recording medium | |
| US6432502B1 (en) | Optical recording medium and method of manufacturing the same | |
| US6933031B2 (en) | Optical information recording medium and its manufacturing method | |
| US20050002322A1 (en) | Optical information recording medium | |
| EP1592003B1 (en) | Optical recording medium and method for manufacturing same | |
| JP2002352472A (en) | Optical information recording medium, its manufacturing method and its recording/reproducing method | |
| JP4216178B2 (en) | Multi-layer phase change information recording medium and recording / reproducing method thereof | |
| KR20080033528A (en) | Multilayer optical recording medium and optical recording method | |
| US20070166505A1 (en) | Optical storage medium, manufacturing method of recording layer thereof, and recording method thereof | |
| JPH0375940B2 (en) | ||
| JP2002123977A (en) | Write once read many optical recording medium | |
| US20050118530A1 (en) | Optical recording medium | |
| US20050207329A1 (en) | Optical recording medium | |
| JP2000339748A (en) | Optical recording medium | |
| JPH10134414A (en) | Optical recording medium | |
| JPH01137436A (en) | Optical recording medium |