JPS588768Y2 - Magnetron type cathode device - Google Patents
Magnetron type cathode deviceInfo
- Publication number
- JPS588768Y2 JPS588768Y2 JP1979132079U JP13207979U JPS588768Y2 JP S588768 Y2 JPS588768 Y2 JP S588768Y2 JP 1979132079 U JP1979132079 U JP 1979132079U JP 13207979 U JP13207979 U JP 13207979U JP S588768 Y2 JPS588768 Y2 JP S588768Y2
- Authority
- JP
- Japan
- Prior art keywords
- target
- type cathode
- magnetron type
- cathode device
- holding portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
本考案はカソード本体に、マグネットと、その上面のタ
ーゲットとを備える式のスパッタリング用のマグネトロ
ン型カソード装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetron type cathode device for sputtering, which includes a cathode body, a magnet, and a target on its upper surface.
元来この種装置において、上面のターゲットは、その作
動に際し、主として電界と磁界とが直交する所謂エロー
ジョン領域においてスパッタリングされてその部分が消
耗するもので、かくてその消耗に際し、該ターゲットを
全体として交換することは不経済となる。Originally, in this type of device, when the target on the upper surface is operated, sputtering is mainly performed in the so-called erosion region where the electric field and the magnetic field are perpendicular to each other, and that part is consumed. It would be uneconomical to exchange.
従来、かＳる不都合を無くすべく、例えば第１図示のよ
うにカソード本体ａにマグネツ）ｂとその上面のターゲ
ットＣとを備える式のものに釦いて、該ターゲットｃを
エロージョン領域のターゲット部分ｄと、それ以外の領
域のターゲット押え部分ｅとに分割して構成させ、必要
に応じ該ターゲット部分ｄのみを取外して新品と交換す
るようにした式のものは提案されたが、この場合ターゲ
ット材料
ｄとは異る材料、即ちスパッタリングすべき物質とは異
る物質で構成させる式を一般としたもので、か＼るもの
ではスパッタ膜に汚染を生じ易い不都合を伴う。Conventionally, in order to eliminate such inconveniences, for example, as shown in the first figure, a cathode body (a) is equipped with a magnet (a) and a target (C) on its upper surface, and the target (c) is attached to the target portion (d) of the erosion area. A method has been proposed in which the target part d is divided into a target holding part e and a target holding part e in other areas, and if necessary, only the target part d can be removed and replaced with a new one, but in this case, the target material This is a general formula in which the material is made of a material different from d, that is, a material different from the material to be sputtered.
即ちスパッタ電力はカソード本体に印加されるため、タ
ーゲットｃはターゲット押え部分ｅにも電界が印加され
、従って放電プラズマ中の荷電粒子は該部分ｅの表面に
も衝撃することが予想され、これが不純物となり、スパ
ッタ膜が汚染され勝ちである。That is, since the sputtering power is applied to the cathode body, an electric field is also applied to the target holding part e of the target c, and therefore, it is expected that the charged particles in the discharge plasma will also impact the surface of the part e, and this will cause impurities. Therefore, the sputtered film is likely to be contaminated.
本考案はかＸる不都合のない装置を得ることをその目的
としたもので、カソード本体１に、マグネット２と、そ
の上面のターゲット３とを備えてマグネトロン型カソー
ドを構成させると共に、該ターゲット３をエロージョン
領域のターゲット部分４と、それ以外の領域のターゲッ
ト押え部分５とに分割して構成させる式のものにおいて
、該ターゲット押え部分５を該ターゲット部分４と同質
の材料で構成し画部分４，５を各周縁の傾斜函４ａ、５
ａＫ＞いて互に重合させることを特徴とする。The purpose of the present invention is to obtain a device free of such inconveniences, and the cathode body 1 is provided with a magnet 2 and a target 3 on its upper surface to constitute a magnetron type cathode. In the type in which the target part 4 is divided into a target part 4 in the erosion area and a target holding part 5 in other areas, the target holding part 5 is made of the same material as the target part 4, and the image part 4 , 5 as inclined boxes 4a, 5 on each peripheral edge.
aK> and polymerize each other.
第２図はその１例を示すもので、ターゲット部分４は全
体として環状となすと共にその内外周縁を各上向きの傾
斜函４ａ、４ａとし、ターゲット押え部分５はその中心
部と外周部とに存して外周縁と内周縁との各下向きの傾
斜函５ａ 、５ａでそれに圧接″され、かくて良好に密
着されるようにした。FIG. 2 shows one example, in which the target portion 4 has an annular shape as a whole, and its inner and outer peripheral edges are upwardly inclined boxes 4a, 4a, and the target holding portion 5 exists at its center and outer peripheral portion. The outer circumferential edge and the inner circumferential edge of the downwardly inclined boxes 5a, 5a are pressed into contact with the outer circumferential edge and the inner circumferential edge of the downwardly inclined box 5a, thus achieving a good close contact.
該ターゲット押え部分５はその下側のバッキンググレー
ト６に固定されるもので、その手段は任意であるが、例
えば第３図示のように各螺子７を下面から施して着脱自
在に結着される型式とし、この場合ターゲット材料が、
Ｃｕ或はＡＩのように軟質のときは、例えば第４図示の
ようにその裏面にステンレス鋼その他の硬質の板材８を
裏打ちして該板材８に釦いて固定自在とすることが出来
、更に例えば第５図示のように中心部はメタルボンド９
その他で着脱不能に固定すると共に外周部はその上面か
ら施す螺子７で着脱自在に固定するようにし、この場合
はターゲット部分４はその取外しに備えてこれを例えば
第６図示のように左右の両半部に分割して構成させる。The target holding part 5 is fixed to the backing grate 6 on the lower side thereof, and the means for doing so is arbitrary, but for example, as shown in the third figure, each screw 7 is applied from the bottom surface to attach and detach the target holding part 5. In this case, the target material is
When it is soft like Cu or AI, it can be lined with a stainless steel or other hard plate material 8 on its back side as shown in the fourth figure, and can be fixed to the plate material 8 with a button. As shown in Figure 5, the center is metal bond 9
It is fixed non-removably with other parts, and the outer peripheral part is fixed removably with screws 7 applied from the upper surface of the outer peripheral part. Divide into halves and configure.
図面で１０はその上面のアースシールドを示す。In the drawings, numeral 10 indicates an earth shield on the upper surface thereof.
尚この場合両半部は例えば第１図示のように各傾斜面４
ｂ、４ｂで互に重合されるようにした。In this case, both halves are connected to each inclined surface 4 as shown in the first diagram, for example.
b and 4b were made to be mutually polymerized.
その作動を説明するに、スパッタリング作動によれば主
としてターゲット部分４がスパッタされてそれによるス
パッタ膜が得られるもので、この点は先のものと特に異
らないが、この場合それ以外の領域即ちターゲット押え
部分５についても多少ともスパッタされることが予想さ
れる。To explain the operation, according to the sputtering operation, the target portion 4 is mainly sputtered to obtain a sputtered film, and this point is not particularly different from the previous one, but in this case, other areas, i.e. It is expected that the target holding portion 5 will also be sputtered to some extent.
かくて該押え部分５を予めターゲット部分４と同質に作
るもので、これがスパッタされてスパッタ膜に混入する
も互に同質でするので不純物とはならない。In this way, the presser portion 5 is made in advance to have the same quality as the target portion 4, and even if it is sputtered and mixed into the sputtered film, it does not become an impurity because they are of the same quality.
次でターゲット部分４が消耗すれば、これを予め別個に
用意される新品と交換するものでこの点は先のものと特
に異らない。If the target portion 4 is worn out next time, it is replaced with a new one prepared separately in advance, and this point is not particularly different from the previous one.
この交換作業によれば、その表面が異物で多少とも汚染
されることが考えられるが、その汚染は引続くスパッタ
リンク作動に際し、その当初を予備スパッタリングとし
て清浄化させ得られる。According to this replacement operation, the surface may be contaminated to some extent with foreign matter, but this contamination can be initially cleaned by preliminary sputtering during the subsequent sputter link operation.
このように本考案によるときはターゲット３をターゲッ
ト部分４とターゲット押え部分５とに分割する式のもの
において、該ターゲット押え部分５を該ターゲット部分
４と同質の材料とするもので、該押え部分５に多少とも
生ずるスパッタは不純物となることがなく、また画部分
４，５を各周縁の傾斜面４ａ 、５ａにおいて互に重合
させるもので、画部分４，５の境目は荷電粒子の進行方
向に対して傾斜され、該荷電粒子のカソード本体１側へ
の侵入が阻止されて、該カソード本体１側での異質材料
のスパッタが生ずることなく、かくて汚染のないスパッ
タ膜を簡単且確実に得られる効果を有する。In this way, according to the present invention, in a type in which the target 3 is divided into the target portion 4 and the target holding portion 5, the target holding portion 5 is made of the same material as the target portion 4, and the holding portion The spatter generated to some extent on 5 does not become an impurity, and the image portions 4 and 5 are superposed on each other at the inclined surfaces 4a and 5a of each periphery, and the boundary between the image portions 4 and 5 is in the traveling direction of the charged particles. This prevents the charged particles from entering the cathode body 1 side, thereby preventing sputtering of foreign materials on the cathode body 1 side, thus easily and reliably producing a contamination-free sputtered film. It has the effect that can be obtained.
第１図は従来例の裁断側面図、第２図は本案装置の１例
の裁断側面図、第３図乃至第５図はその固定手段を説明
する各裁断側面図、第６図は第５図の実施例の平面図、
第７図はその■−■線截線面断面図る。
１・・・・・・カソード本体、２・・・・・・マグネッ
ト、３・・・・・・ターゲット、４・・・・・・ターゲ
ット部分、５・・・・・・ターゲット押え部分、４ａ
、５ａ・・・・・・傾斜面。FIG. 1 is a cut side view of a conventional example, FIG. 2 is a cut side view of an example of the device of the present invention, FIGS. 3 to 5 are cut side views explaining the fixing means, and FIG. A plan view of the embodiment of the figure,
FIG. 7 is a cross-sectional view taken along the line ■-■. 1... Cathode body, 2... Magnet, 3... Target, 4... Target part, 5... Target holding part, 4a
, 5a... Slanted surface.
Claims (1)
ット３とを備えてマグネトロン型カソードを構成させる
と共に、該ターゲット３をエロージョン領域のターゲッ
ト部分４と、それ以外の領域のターゲット押え部分５と
に分割して構成させる式のものにトいて、該ターゲット
押え部分５を該ターゲット部分４と同質の材料で構成し
、画部分４，５を各周縁の傾斜函４ａ 、５ａに釦いて
互に重合させることを特徴とするマグネトロン型カソー
ド装置。The cathode body 1 is equipped with a magnet 2 and a target 3 on its upper surface to constitute a magnetron type cathode, and the target 3 is divided into a target portion 4 in the erosion region and a target holding portion 5 in the other region. In this case, the target holding portion 5 is made of the same material as the target portion 4, and the image portions 4 and 5 are pressed onto the inclined boxes 4a and 5a on the respective peripheries to overlap each other. A magnetron type cathode device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979132079U JPS588768Y2 (en) | 1979-09-26 | 1979-09-26 | Magnetron type cathode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979132079U JPS588768Y2 (en) | 1979-09-26 | 1979-09-26 | Magnetron type cathode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5653770U JPS5653770U (en) | 1981-05-12 |
| JPS588768Y2 true JPS588768Y2 (en) | 1983-02-17 |
Family
ID=29363711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979132079U Expired JPS588768Y2 (en) | 1979-09-26 | 1979-09-26 | Magnetron type cathode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS588768Y2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000004203A1 (en) * | 1998-07-14 | 2000-01-27 | Japan Energy Corporation | Sputtering target and part for thin film-forming apparatus |
| EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
| JP2008001920A (en) * | 2006-06-20 | 2008-01-10 | National Institute Of Advanced Industrial & Technology | Target holder and target holding method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607705B2 (en) * | 1981-12-03 | 1985-02-26 | 日本真空技術株式会社 | sputtering equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS512682A (en) * | 1974-06-26 | 1976-01-10 | Fujitsu Ltd | SUPATSUTARINGUHOHO |
-
1979
- 1979-09-26 JP JP1979132079U patent/JPS588768Y2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS512682A (en) * | 1974-06-26 | 1976-01-10 | Fujitsu Ltd | SUPATSUTARINGUHOHO |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000004203A1 (en) * | 1998-07-14 | 2000-01-27 | Japan Energy Corporation | Sputtering target and part for thin film-forming apparatus |
| EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
| JP2008001920A (en) * | 2006-06-20 | 2008-01-10 | National Institute Of Advanced Industrial & Technology | Target holder and target holding method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5653770U (en) | 1981-05-12 |
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