JPS5869075A - Manufacture of thermal head - Google Patents
Manufacture of thermal headInfo
- Publication number
- JPS5869075A JPS5869075A JP16914781A JP16914781A JPS5869075A JP S5869075 A JPS5869075 A JP S5869075A JP 16914781 A JP16914781 A JP 16914781A JP 16914781 A JP16914781 A JP 16914781A JP S5869075 A JPS5869075 A JP S5869075A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermal head
- subsubstrates
- insulating substrate
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/345—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
Abstract
Description
【発明の詳細な説明】
本発明はファクシミリやプリンタに用いる特に薄膜形サ
ーマルヘッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film thermal head, particularly for use in facsimiles and printers.
サーマルヘッドはファクシミリやプリンタなどの装置の
記録デバイスとして、その装置の小製軽量化−無保守化
、高信頼化、低価格化を大きく促進し、その伸長和犬き
く寄与している・この中でも薄膜形サーマルヘッドは熱
の応答性に優れ、熱効率も高くしかｔ高精細な素子が比
較的簡単に形成できるためサーマルヘッドの主流を成し
ている。Thermal heads are used as recording devices for devices such as facsimiles and printers, and have greatly promoted the miniaturization and weight reduction, maintenance-free, high reliability, and low cost of such devices, and have contributed significantly to their growth. Thin film thermal heads are the mainstream of thermal heads because they have excellent thermal responsiveness, high thermal efficiency, and can relatively easily form high-definition elements.
薄膜形サーマルヘッドの製造は薄膜集積化技術を用いて
行われる。すなわち、ガラスグレーズを施したアルミナ
基板上に発熱抵抗体やその電極配線や、さらＫａそれら
の絶縁配線あるいは耐摩耗保護層らの構成要素を蒸着や
スパッタによる抵抗体、導体、銹電体らの皮ｌＩを各構
成要素毎に所望のパターンにフォトエツチングすること
を繰り返すことで行われる０
従来、前記薄膜形サーマルヘッドを含む薄膜集積回路素
子の製造にありては次のような二つの欠点がＴｏ−）た
。Thin film thermal heads are manufactured using thin film integration technology. That is, on an alumina substrate coated with a glass glaze, constituent elements such as a heating resistor, its electrode wiring, its insulating wiring, and an abrasion-resistant protective layer are formed by vapor deposition or sputtering. This is done by repeatedly photo-etching the skin into a desired pattern for each component. Conventionally, the manufacturing of thin film integrated circuit elements including the thin film thermal head has the following two drawbacks. To-)
その第一はスパッタで形成した抵抗１ＩＦｉその基板内
でのシート抵抗の分布が基板周辺部において異常分布を
示すことである。これはスパッタ時のグロー放電が基板
周辺部で集中傾向となるため、被着した抵抗膜Ｋｇ厚や
組成の不均一が発生するためと考えられる。The first problem is that the sheet resistance distribution within the substrate of the resistor 1IFi formed by sputtering shows an abnormal distribution in the peripheral area of the substrate. This is thought to be because glow discharge during sputtering tends to concentrate around the substrate, resulting in non-uniformity in the thickness and composition of the deposited resistive film Kg.
その第二は被着した薄膜部材を所望のパターンに加工す
る７＃トエツチング工程において、液状フォトレジスト
を回転ｍ商機により塗布した時、基板周辺部においてレ
ジストだ１りが発生してこの部分のレジストの厚みが厚
くなり、正常なレジストパターン形成が行えなくなり精
細なパターン化が狙害されることであ゛る・
このような欠点のため、従来の薄膜集積回路素子の製造
では、一枚の基板に複数個の回路基板を配置する方法に
よって、前記のような原因で不良となる周辺部の回路基
板は捨て去る方法を取っていた。The second problem is that during the 7# etching step in which the adhered thin film member is processed into a desired pattern, when liquid photoresist is applied using a rotary machine, a smear of resist occurs around the periphery of the substrate. As the resist pattern becomes thicker, it becomes impossible to form a normal resist pattern, and fine patterning becomes a target. Due to these drawbacks, in the conventional manufacturing of thin film integrated circuit devices, it is difficult to form a resist pattern on a single substrate. By arranging a plurality of circuit boards, peripheral circuit boards that are defective due to the above-mentioned causes are discarded.
一回路当９０基板寸法が小さい場合はこのような一方法
も行い得るがファクシミリ用サーマルヘッドＫＴｏりて
は長辺において２０センチメートル以上となるので、こ
のような不良除外は行い得ない。If the size of the 90 board per circuit is small, such a method may be used, but since the long side of the facsimile thermal head KTo is 20 centimeters or more, such defect exclusion cannot be performed.
プリンタ用サーマルヘッドでは印字後直ちに印字状態が
視認できるよう、通常、基板の２辺が成す端ｓＫ発熱体
が設けられるため、抵抗体の異常分布および、精細表フ
ォトエツチングが困難という不良に遭遇し易い。ファク
タｔす用サーマルヘッドでは基板長辺部ＫＦｉ多数の駆
動端子が引き出され、かつそれが限られ九寸法下で配置
するためＫｆｇ細にならざるを得なく前記フォトレジス
トの厚み不均一はこの部分における断線、短絡の主要な
原因となっている。In a thermal head for a printer, a heating element is usually provided at the edge sK formed by the two sides of the substrate so that the printing status can be visually confirmed immediately after printing, so defects such as abnormal distribution of the resistor and difficulty in photo-etching the detailed surface are encountered. easy. In the thermal head for factor t, a large number of drive terminals are drawn out on the long side of the substrate, and since these are limited and arranged at a dimension less than 9, the thickness of the photoresist has to be thin, and the non-uniform thickness of the photoresist occurs in this area. This is the main cause of disconnections and short circuits in
本発明の目的に従来の薄膜形サーマルヘッドの製造にお
けるかかる欠点金除去し、抵抗体の異常分布が少なく、
かつ精細なフォトエツチングが行い得るサーマルヘッド
の製造方法を提供するものである。The purpose of the present invention is to eliminate such defects in the production of conventional thin film thermal heads, reduce abnormal distribution of resistors,
The present invention also provides a method for manufacturing a thermal head that can perform fine photoetching.
本発ＩＪＦ４によれば絶縁基板上に導体、抵抗体、誘電
体の薄膜部材を集積化して成るサーマルヘッドの製造方
法において、前記絶縁基板がその全周囲もしくは一部周
囲にスナップ線で区分された副基板を備え、前記副基板
を除く絶縁基板面内にサーマルヘッドを配置するように
行い、その製造の全工程終了時もしくはその製造工程中
の最終フ、トエッチング工程終了時に前記副基板を前記
スナック′線より切り放してなることｔ−特徴とするサ
ーマルヘッドの製造方法が得られる。According to IJF4 of the present invention, in a method for manufacturing a thermal head comprising a thin film member of a conductor, a resistor, and a dielectric material integrated on an insulating substrate, the insulating substrate is divided by a snap line around the whole or part of the periphery. A sub-substrate is provided, and a thermal head is placed within the surface of the insulating substrate excluding the sub-substrate, and the sub-substrate is removed from the insulating substrate at the end of the entire manufacturing process or at the end of the final etching process in the manufacturing process. A method for manufacturing a thermal head characterized in that it is cut away from the snack wire is obtained.
以下図面とともに本発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.
図は本発明の一実施例によって得られるプリンタ用サー
マルヘッドを同一基板において一体なものとして同時［
４個作成した場合の平面図を示す。The figure shows a thermal head for a printer obtained according to an embodiment of the present invention as an integrated unit on the same substrate.
A plan view when four pieces are created is shown.
Ｅにおいて１社例えばその−面にガラスグレーズを施し
たアルミナセラミックによる絶縁基板で、その四周部に
は前記絶縁基板の製作時に金型で同時に設けられたスナ
ップ線２で区分された副基板３ｔ−具備する口さらに本
例においては最終的に４個に分離するために基板中心を
通る縦横の部分１にも同様なスナップ線が設けである。In one company E, for example, an insulating substrate made of alumina ceramic with a glass glaze applied to its surface, and a sub-substrate 3t- on its four peripheries divided by snap lines 2, which were simultaneously provided with a mold during the production of the insulating substrate. Further, in this example, similar snap lines are provided on the vertical and horizontal portions 1 passing through the center of the substrate in order to finally separate it into four pieces.
以下の説明においては基板部ＩＡＫ付いて説明するが他
の基板部ＩＢ、ＩＣ１ＩＤＫついても同一である０１１
は例えばタンタル板をターゲットとして微圧なアルゴン
と窒素の混合雰囲気中での直流スパッタにより、絶縁基
板全面に被着した抵抗体膜を、次にその全面１１Ｃ＠状
フォトレジスト管回転論布機で塗布し、乾燥した後、所
望のパターンを有したフォ）ｗスフでもりて露光し、ｌ
！Ｉ！Ｌ、不要な部分の抵抗体ＩＭを例えば硝酸と７ツ
酸の混合液でエツチングすることＫよって得られる、複
数個の互いに分離した抵抗体から成る発熱体領域である
。In the following explanation, the board part IAK will be explained, but the same applies to the other board parts IB and IC1IDK.
For example, using a tantalum plate as a target, the resistor film is deposited on the entire surface of the insulating substrate by direct current sputtering in a mixed atmosphere of argon and nitrogen at a slight pressure, and then the entire surface is coated with a 11C@-shaped photoresist tube using a rotating coating machine. After coating and drying, it is exposed to light using a foam with a desired pattern.
! I! L, a heating element region consisting of a plurality of resistors separated from each other, obtained by etching unnecessary portions of the resistor IM with, for example, a mixed solution of nitric acid and hexanic acid;
次に発熱体領域 を形成し九絶縁基板表面に蒸着装置で
もってニクロムと金管順に被着した導電Ｍをニクロムに
は塩酸を金にはヨー化カリ溶ｍを用い前記同様フォトエ
ツチングを行うととによって、前記発熱体領域１１の複
数個の抵抗体の一端を共通につなぐ共通電極１２と他端
をそれぞれ個別につなぐ個別電極１３が形成される０
次に各基板部ＩＡ〜ＩＤの端部の前記共通電極１２と複
数個の個別電極１３の先端部領域ｔ−櫃うメタルマスク
を用いて高周波スパッタ装置によりて二酸化シリコン膜
と五酸化タンタル膜を順に被着して保繰層（図示せず）
を形成する。この一連の工程が完了したらスナップ＠２
の部分で基板を折ることによって四周の副基板を切９放
し、さらに縦横の二分線のスナップ線から割れば独立し
九４個ノサーマルヘッドが得られる。Next, a heating element region is formed, and conductive M is deposited on the surface of the insulating substrate in the order of nichrome and brass using a vapor deposition apparatus. Photoetching is performed in the same manner as described above using hydrochloric acid for nichrome and potassium iodide solution for gold. As a result, a common electrode 12 that commonly connects one end of the plurality of resistors in the heating element region 11 and individual electrodes 13 that individually connect the other ends are formed. A silicon dioxide film and a tantalum pentoxide film are sequentially deposited on the tip regions of the common electrode 12 and the plurality of individual electrodes 13 using a metal mask using a high-frequency sputtering device to form a storage layer (not shown). )
form. Once this series of steps is complete, snap @2
By folding the board at the part, the sub-boards around the four circumferences are cut out, and further divided along the vertical and horizontal bisecting snap lines, 94 independent thermal heads can be obtained.
以上説明したプリンタ用サーマルヘッドの製造工程にお
いて、まず、抵抗体膜の形成工程においては複数の基板
部ＩＡ〜ＩＤの四周にはそれぞれ副基板３か相隣る基板
部が存在するので、スパッタ時の放電のエツジ効果Ｆｉ
絶縁基板１１Ｏ＆！ｌｊ周の副基板部においてのみ生じ
、各基板部ＫＩＩＩＩＩしては一様性ある放電が行われ
るので比抵抗はらつきの小さい抵抗膜が得られる・副基
板部の寸法ｄとしては実験的Ｋ ５ ミＩＪメートル以
上めればよいことがわかった〇
次に抵抗体膜および導電族のエツチング工程において、
回転塗布機による７＃トレジスト塗布における基板四周
部でのレジストたまりはレジストとしてＡＺ３４０Ｂ（
シープレイ社商品名）を用い處布様の回転数を２００Ｏ
ｒ、ｐ、ｍ内外の時・レジストたｔｊｌＫよる厚み増大
部の輪は約１ミリメートル程度であった。副基板部のｍ
ｄが前記と同じ５ミリメートル以上であれは、前記レジ
ストｆｃまりに全てａｌｌ！板部にのみ発生し、最終的
にサーマルヘッドとなる主基板部Ｉ Ａ −Ｉ Ｄ領域
では一様性が良いレジスト厚みなので精細なパターン形
成が容易に行える◇
以上説明したように副基板を設けたことによる効果は抵
抗体膜形成工程とフォトエツチング工程において！ｌＩ
４１１である。副基板の切り放しに本実施例のような全
装造工程終了時でなくでも、例えば導体膜のフォトエツ
チング工程終了時に切や放してしまい、そのｖｋに保護
層形成を行っても良い。In the manufacturing process of the thermal head for a printer described above, first, in the process of forming the resistor film, there are sub-substrates 3 or adjacent substrate parts on each of the four circumferences of the plurality of substrate parts IA to ID. The edge effect Fi of the discharge of
Insulating substrate 11O&! Since the discharge occurs only in the sub-substrate part of the circumference of lj and is uniform in each substrate part, a resistive film with small specific resistance fluctuation can be obtained.・The dimension d of the sub-substrate part is set to the experimental value of K 5 mm. I found out that IJ meters or more is sufficient.Next, in the etching process of the resistor film and conductive group,
When applying 7# resist using a rotary coater, the resist that accumulates around the four peripheries of the substrate should be treated with AZ340B (
Using Seaplay (product name), set the rotation speed of the cloth to 200O.
When inside and outside r, p, and m, the ring of the thickened part due to resist tjlK was about 1 mm. m of sub-board part
If d is the same as above, 5 mm or more, the resist fc is all! This occurs only on the plate part, and the resist thickness is uniform in the main substrate area IA-ID, which will eventually become the thermal head, making it easy to form a fine pattern ◇ As explained above, the sub-substrate is provided This effect can be seen in the resistor film formation process and photoetching process! lI
It is 411. The sub-substrate need not be cut off at the end of the entire mounting process as in this embodiment, but may be cut off at the end of the photo-etching process of the conductor film, and a protective layer may be formed on the vk.
さらに本実施例でに基板の四周に副基板を設けた場合に
付いて説明したが、例えば導体の配ｍ四ｔが粗いとか、
配線が基板端に無い場合ら、レジストだまりがさほど影
響せず、ｌ＃に抵抗体の一様性を高めたいだけという場
合には第１図の実施例において、左辺部と下辺部には副
基板管設ける必１１’Ｈない。したがって目的によって
、どの部分に副基板を股、けるかを決定すれば良い〇な
お本実施例の目的は薄膜型サーマルヘッドの製造方法に
とどまらず、一般的な薄Ｊ［型集積回路素子にもそのま
ま適用できることは言う迄もない０Furthermore, in this embodiment, the case where sub-boards are provided around the four peripheries of the board has been explained, but for example, if the conductor arrangement is rough,
If the wiring is not at the edge of the board, and the resist pool does not have much of an effect and you just want to improve the uniformity of the resistor in l#, use the embodiment shown in Figure 1 to add sub-layers to the left and bottom sides. It is not necessary to install a board tube. Therefore, it is only necessary to decide in which part the sub-substrate should be placed depending on the purpose.The purpose of this embodiment is not limited to the manufacturing method of a thin film type thermal head, but also to the manufacturing method of a general thin J[type integrated circuit element]. Needless to say, it can be applied as is.
図は本発明の一実施例により得られるサーマルヘッドの
平面図で、ｌＦｉ絶縁基板、ＩＡ〜ＩＤは基板部、２社
スナップ線、３は副基板、１ｌｔ１発熱体領域、１２Ｆ
ｉ共通電極、１３Ｆｉ個別電極、ｄは〜基板の幅寸法を
示す。The figure is a plan view of a thermal head obtained according to an embodiment of the present invention, in which IFi insulating substrate, IA to ID are substrate parts, 2nd company snap lines, 3 are sub-boards, 1lt1 heating element area, 12F
i common electrode, 13Fi individual electrode, d indicates the width dimension of the substrate.
Claims (1)
して成るサーマルヘッドの製造方法において、前記絶縁
基板がその全周囲もしくは−）部周囲にスナップ線で区
分された副基板を備え、前記副基板を除く絶縁基板面内
にサーマルヘッドを配置するように行い、その製造の全
工程終了時もしくはその製造工程中の最終フォトエツチ
ング工程終了時に前記副基板を前記スナップ線より切り
放してなることを特徴とするサーマルヘッドの製造方法
。In a method for manufacturing a thermal head in which thin film members of a conductor, a resistor, and a dielectric are integrated on an insulating substrate, the insulating substrate is provided with a sub-substrate divided by a snap line around the entire periphery or the periphery of the The thermal head is arranged within the surface of the insulating substrate excluding the sub-substrate, and the sub-substrate is cut away from the snap line at the end of all manufacturing steps or at the end of the final photo-etching step in the manufacturing process. The manufacturing method of the featured thermal head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16914781A JPS5869075A (en) | 1981-10-22 | 1981-10-22 | Manufacture of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16914781A JPS5869075A (en) | 1981-10-22 | 1981-10-22 | Manufacture of thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5869075A true JPS5869075A (en) | 1983-04-25 |
Family
ID=15881152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16914781A Pending JPS5869075A (en) | 1981-10-22 | 1981-10-22 | Manufacture of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5869075A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62207655A (en) * | 1986-03-07 | 1987-09-12 | Rohm Co Ltd | Method for preparing thermal printing head and base plate thereof |
| JPH05261956A (en) * | 1992-03-02 | 1993-10-12 | Rohm Co Ltd | Manufacture of thermal print head |
-
1981
- 1981-10-22 JP JP16914781A patent/JPS5869075A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62207655A (en) * | 1986-03-07 | 1987-09-12 | Rohm Co Ltd | Method for preparing thermal printing head and base plate thereof |
| JPH0566268B2 (en) * | 1986-03-07 | 1993-09-21 | Rohm Kk | |
| JPH05261956A (en) * | 1992-03-02 | 1993-10-12 | Rohm Co Ltd | Manufacture of thermal print head |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7352273B2 (en) | Chip resistor | |
| US6724295B2 (en) | Chip resistor with upper electrode having nonuniform thickness and method of making the resistor | |
| JPS5869075A (en) | Manufacture of thermal head | |
| US5169493A (en) | Method of manufacturing a thick film resistor element | |
| US4632845A (en) | Process for the fabrication of thermal printing boards in multilayer thick-film technology | |
| JP3928763B2 (en) | Method for manufacturing thin film chip resistor | |
| JP3982655B2 (en) | Manufacturing method of electronic parts | |
| JPH0864407A (en) | Manufacture of resistance part | |
| JPH11111513A (en) | Manufacture of chip resistor | |
| JPH05330107A (en) | Thermal printing head | |
| JP3129912B2 (en) | Manufacturing method of thermal head | |
| JP2705080B2 (en) | Manufacturing method of thermal recording head | |
| JP3036214B2 (en) | Manufacturing method of square chip resistor | |
| JPH1034993A (en) | Manufacture of thermal head | |
| JPS6330771B2 (en) | ||
| JPH11102806A (en) | Manufacture of thick-film resistor for high voltage | |
| JPS6019553A (en) | Method and apparatus for manufacturing thermal head | |
| JPH1034992A (en) | Thermal head | |
| JPS6242858A (en) | Preparation of thermal head | |
| JPH0774007A (en) | Manufacture of fixed resistor | |
| JP2003188002A (en) | Resistor and manufacturing method therefor | |
| JPS61294888A (en) | Thick film electrode | |
| JPH03259591A (en) | Manufacture of circuit board | |
| JPH07326506A (en) | Production of chip resistor | |
| JPH03142256A (en) | Manufacture of thermal head |