JPS5866661U - 発光ダイオ−ド - Google Patents

発光ダイオ−ド

Info

Publication number
JPS5866661U
JPS5866661U JP1981162160U JP16216081U JPS5866661U JP S5866661 U JPS5866661 U JP S5866661U JP 1981162160 U JP1981162160 U JP 1981162160U JP 16216081 U JP16216081 U JP 16216081U JP S5866661 U JPS5866661 U JP S5866661U
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
active layer
emitting region
layer side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981162160U
Other languages
English (en)
Inventor
野村　秀徳
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1981162160U priority Critical patent/JPS5866661U/ja
Publication of JPS5866661U publication Critical patent/JPS5866661U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は一実施例の概略上面図、第２図はその側断面図
である。 図中、１１・・・半導体基板、ｌｌａ・・・発光領域メ
、　サ部、１１ｂ・・・ボンディング領域メサ部、１２
・・・活性層、１２ａ・・・発光領域、１３・・・クラ
ッド層、１４・・・電極形成層、１４ａ・・・電極形成
領域、１５・・・絶縁膜、１６・・・ｐ側電極、１７・
・・ｎ側電極、１８・・・発光窓、２１・・・シリコン
サブマウント、２２・・・Ｓｎ融材、３０・・・Ａｌ線
である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 二重へテロ接合構造を有し、かつ活性層側表面をヒート
    シンク側として使用される発光ダイオードにおいて、発
    光領域が前記活性層を貫く深さのエツチングによって形
    成されたメサ部に限定され、かつリード線ボンディング
    される部分に対する活性層側表面の部分が前記発光領域
    のメサ部表面に比べ低くない高さを有することを特徴と
    する発光ダイオード。
JP1981162160U 1981-10-29 1981-10-29 発光ダイオ−ド Pending JPS5866661U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981162160U JPS5866661U (ja) 1981-10-29 1981-10-29 発光ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981162160U JPS5866661U (ja) 1981-10-29 1981-10-29 発光ダイオ−ド

Publications (1)

Publication Number Publication Date
JPS5866661U true JPS5866661U (ja) 1983-05-06

Family

ID=29954493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981162160U Pending JPS5866661U (ja) 1981-10-29 1981-10-29 発光ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS5866661U (ja)

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