JPS586133A - Forming device for minute pattern - Google Patents
Forming device for minute patternInfo
- Publication number
- JPS586133A JPS586133A JP56104648A JP10464881A JPS586133A JP S586133 A JPS586133 A JP S586133A JP 56104648 A JP56104648 A JP 56104648A JP 10464881 A JP10464881 A JP 10464881A JP S586133 A JPS586133 A JP S586133A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- carbon
- processed
- pattern
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、写＾蝕刻による微細加工に使用するマスク
パターンの形成用の装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for forming a mask pattern used in microfabrication by photolithography.
従来仁の種の装置として、簡１図に示すものがあうた。As a conventional seed seed device, the one shown in Figure 1 has been used.
図において％（１）は電子銃、（２）は二の電子銃（１
）より出た電子線を細くしぼり、かつ加工対象物上の任
意の位置に照射するための電子光学系、（３）はこの系
全体を真空排気するためのチャンバー、Ｉ）は加工対象
物、（６）はξの加工対象物（４）上に予め塗布された
レジスト、（６）は電子光学系〔）によって任意のパタ
ーンを加工物面上に描（ように走査されている電子ビー
ム、（７）はこの電子ビームによりて変質させられたレ
ジスト領域を表わし、この系全体は図の下方に配置され
た（図には示されていない）真空排気ポンプ系によって
真空排気される。In the figure, % (1) is the electron gun, (2) is the second electron gun (1
) is an electron optical system for squeezing the electron beam emitted from the object and irradiating it onto a desired position on the workpiece; (3) is a chamber for evacuating the entire system; I) is the workpiece; (6) is a resist coated in advance on the workpiece (4) of ξ; (6) is an electron beam that is scanned to draw an arbitrary pattern on the workpiece surface by an electron optical system [); (7) represents the resist region altered by the electron beam, and the entire system is evacuated by an evacuation pump system (not shown) located at the bottom of the figure.
次に動作について説明する。電子光学系（幻によって、
槙式図的に示したように加工対象物上の特定の部分のみ
に電子ｍ （＋１）が照射される。ξれによって、加工
物（４）上に予め塗布されていたレジスト（６）は、照
射部分のみその重合度が変化して（７）の変質層になる
。このようにして、レジスト面上に望みの形状の変質層
を形成したうえで、その加工メッ象物を真空チャンバー
からとり出し、たとえばポジレジストの場合−ζはその
後の現像工程で変質層以外の部分のレジストを溶かし去
ってしまうことにより、望みのマスクパターンを被加工
物１面上に形成するようになっている・従来の電子ビー
ム露光装置は以上のように単に露光のみが可能なように
構成されているので、実際の写真蝕刻用マスクパターン
の形成にあたっては予め加工対象面にレジスト族を全面
塗布しておくことが必要で、かつ露光後も現像工程を加
えて、不要部分を溶かし去るという作業が必要であった
。また、ｔｇ先光時パターンを下地パターンと合わせる
場合も、全面に塗布されたレジストを介して位１１Ｍ出
するため、合わせ精度が不正確になり易いという欠点も
あつた。Next, the operation will be explained. Electron optical system (by illusion,
As shown in the diagram, only a specific portion of the workpiece is irradiated with electrons m (+1). Due to the ξ angle, the degree of polymerization of the resist (6) previously coated on the workpiece (4) changes only in the irradiated portion, resulting in a deteriorated layer (7). In this way, after forming an altered layer with a desired shape on the resist surface, the processed object is taken out of the vacuum chamber. For example, in the case of a positive resist - A desired mask pattern is formed on one surface of the workpiece by melting away the resist in the area. - Conventional electron beam exposure equipment can only perform exposure as described above. When actually forming a mask pattern for photolithography, it is necessary to apply a resist to the entire surface to be processed in advance, and a developing process is also added after exposure to dissolve unnecessary parts. This work was necessary. Furthermore, when the tg pre-light pattern is matched with the base pattern, the alignment accuracy tends to be inaccurate because about 11M is projected through the resist coated on the entire surface.
この発明は上記のような従来装置の欠点を除去するため
−こなされたもので、露光時にパターン形成面附近に炭
素含有ガスを介在させ、電子ビームによってそのガス成
分を直接加工対象面に固着させることにより、レジスト
の塗布や現像の工程なしに直接マスクパターンを形成で
きる微細加工装置を提供することを目的としている。This invention was developed to eliminate the drawbacks of the conventional apparatus as described above, and involves interposing a carbon-containing gas near the pattern forming surface during exposure, and directly fixing the gas component to the surface to be processed using an electron beam. Accordingly, the present invention aims to provide a microfabrication device that can directly form a mask pattern without resist coating or development steps.
以下、この発明の一実施例を図について説明する。第２
図において、（７）は真空チャンバー内で加工対象面に
炭素含有ガスを吹きつけるためのノズル、（８）は仁の
ノズル（７）４こ供給するガス圧を精蛮に制御するため
の可変型リークバルブ、（９）は原料ガスボンベ（図に
は示されていない）よりガスを導く配管、（イ）はノズ
ル（７）′より吹き出された炭素含有ガスを模型的に示
したもの、（ロ）はこのガス粒子に）が電子ビームの照
射によって焼きつけ固化された結果形成された炭素化合
物層である。An embodiment of the present invention will be described below with reference to the drawings. Second
In the figure, (7) is a nozzle for spraying carbon-containing gas onto the surface to be processed in a vacuum chamber, and (8) is a variable nozzle for finely controlling the gas pressure supplied to (7) 4. type leak valve, (9) is a pipe that guides gas from the raw material gas cylinder (not shown), (A) is a schematic representation of the carbon-containing gas blown out from the nozzle (7)', ( (b) is a carbon compound layer formed as a result of the gas particles () being baked and solidified by electron beam irradiation.
以上のように構成された本発明装置の動作について以下
説明する。本装置においても、電子光学系によって、所
定のパターンを描くような形で加工対象物上の特定部分
のみに電子線が照射されることは従来装置と全く同じで
あるが、この装置においては加工対象物（４）の表面に
°はレジストは塗布されていない。その代りに、電子ず
一ム（６）を鯛射する際にノズル（７）より吹きつけら
れた炭素含有ガス［相］が加工対象物（４）の周囲に存
在するようになっており、それらのガスが熱運動によっ
て常時加工対象面に衝突する状態が作り出されている。The operation of the apparatus of the present invention configured as above will be explained below. In this device as well, the electron optical system irradiates only a specific part of the workpiece with an electron beam in a manner that draws a predetermined pattern, which is exactly the same as in the conventional device. No resist was applied to the surface of the object (4). Instead, the carbon-containing gas [phase] blown from the nozzle (7) when ejecting the electron beam (6) is present around the workpiece (4), A situation is created in which these gases constantly collide with the surface to be machined due to thermal motion.
固体表向に炭素ガスが鈎央している時に電子線が入射す
ると、その電子線のエネルギーを受けて炭素ガス分子は
固体表面ｌζ焼き付けられて固体化する。When an electron beam is incident while carbon gas is centered on the surface of a solid, the carbon gas molecules receive the energy of the electron beam and are burned onto the solid surface lζ and become solid.
この現象は従来より、例えば電子顕微鏡による試料観察
の際にも真空中の残留ハイドロカーボン分子の作用によ
って小規模に見られることがあり、電子線照射による表
面コンタ芝ネーシミンの形成として知られていたもので
あるが、本装置においては意図的にガス分子を供給する
ため、このような炭素化合物形成が大規模に生じて、（
ロ）のようなマスクパターンとして使用できる程度に容
易に成長する。仁の膜（ロ）は加工面に対する密着力も
大きく、また化学薬品に対する耐性にもすぐれているた
め、写真蝕刻のマスク材料としては従来のレジスト以上
に秀れた性質を有している。蝕刻後のマスク除去は、酸
素プラズマあるいは硫酸、王水などによって藺単に行な
える。使用するガスとじては蒸気圧の高い炭化水系オイ
ルの蒸気や、メタン等の次系含有ガス等を利用する。ガ
スの種類や電子光学系の真空排気機構のちがいで、使用
時のガス圧力の最適値は−ってくるか、その圧力はバル
ブ（８ンによ７て制御されるよう−こなっている。炭化
水素化合物の形成速度は、加工物表面におけるガス濃度
の高いほど太き（なるが、電子線の平均自由行程が残留
ガス圧の増加と共に短（なるのでガス濃度を無制限に＾
くするξとはできず、最大限に差動排気機構を工夫して
も１０″ｉ Ｔｏｒｒが限界である。逆に、真空度が高
くなりでくると炭素化合物形成速度が遅くなってしまい
％ ｌＦ’Ｔｏｒｒ 以上では実用的に使用可能な膜形
成が不可能になる。This phenomenon has been observed on a small scale due to the action of residual hydrocarbon molecules in vacuum, for example, when observing samples using an electron microscope, and has been known as the formation of surface contours due to electron beam irradiation. However, since gas molecules are intentionally supplied in this device, such carbon compound formation occurs on a large scale, resulting in (
(b) It grows easily to the extent that it can be used as a mask pattern. The film (b) has excellent adhesion to the processed surface and excellent resistance to chemicals, so it has superior properties as a mask material for photoetching compared to conventional resists. After etching, the mask can be easily removed using oxygen plasma, sulfuric acid, aqua regia, or the like. The gas used is hydrocarbon oil vapor with a high vapor pressure, or a secondary gas containing gas such as methane. Depending on the type of gas and the evacuation mechanism of the electron optical system, the optimum gas pressure during use may vary, or the pressure may be controlled by a valve (8). The rate of formation of hydrocarbon compounds increases as the gas concentration on the surface of the workpiece increases (however, the mean free path of the electron beam becomes shorter as the residual gas pressure increases), so the gas concentration cannot be unlimited.
It is not possible to reduce the temperature to ξ, and even if the differential pumping mechanism is devised to the maximum, the limit is 10"i Torr.On the other hand, as the degree of vacuum increases, the rate of carbon compound formation slows down and Above 1F'Torr, it becomes impossible to form a practically usable film.
なお上記実施例では、ノズル（７）によってガスを吹き
つける構造のものを示したが、加工対象物の周囲全体を
一定ａｉｋのガスでみたすような構造であってもよいこ
とは言うまでもない。In the above embodiment, a structure in which gas is blown through the nozzle (7) is shown, but it goes without saying that a structure in which the entire periphery of the workpiece is filled with gas at a constant aik may also be used.
以上のように、この発明によれば、電子ビームによって
所定のマスクパターンを直接加工面に推横させてゆくよ
うに構成したので、し”シスト塗布や現像といった工程
を省略して高精度の写真蝕刻用マスクパターンを形成で
きるという効果がある。As described above, according to the present invention, since a predetermined mask pattern is directly projected onto the processing surface using an electron beam, it is possible to omit processes such as cyst coating and development, and to produce high-precision photographs. This has the effect of forming an etching mask pattern.
第１図は従来の電子ビーム無光装置を示す概略側断面図
、第１１因はこの発明の一実施例による微細パターン形
成装置を示す概略細断面図である。
図において、（１）・・・電子銃、（ＩＪ・・・電子光
学系、（４）・・・加工対象物、（６）・・・電子ビー
ムＴｈ（７）−・・ノズル、紳・・・炭素含有ガス、（
ロ）・・・炭素化合物層である。
なお、図中同一符号は同−又は相当部分を示す。
代理人 葛野信−
第１図FIG. 1 is a schematic side sectional view showing a conventional electron beamless device, and the eleventh factor is a schematic thin sectional view showing a fine pattern forming device according to an embodiment of the present invention. In the figure, (1)... Electron gun, (IJ... Electron optical system, (4)... Workpiece, (6)... Electron beam Th (7)... Nozzle,・・Carbon-containing gas, (
b) It is a carbon compound layer. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Makoto Kuzuno - Figure 1
Claims (1)
に制御可能な電子ビーム光学系と、加工対象物近傍の雰
囲気を１０−’〜１０−”ｆ６ｒｌ の範囲で自由に
変化さ曹得るようなガス導入機構とを備えた乙とを特徴
とする微細パターン形成装置。 （２）加工面近傍に高ガス濃度雰囲気を作り出すような
形に配置されたノズルを有することを特徴とする特許請
求の範Ｈ第１項記載の微細パターン形成装置。 （８）導入ガスとして、炭素を含有するガスを使用する
ことを特徴とする特許請求の範囲＃！１項ないしは第意
項記載の微細パターン形成装置。[Claims] (1) An electron beam optical system that can be controlled to draw any planar figure on the workpiece, and an atmosphere near the workpiece that can be controlled freely within the range of 10-' to 10-''f6rl. (2) A fine pattern forming apparatus characterized by having a nozzle arranged in a shape that creates a high gas concentration atmosphere near the processing surface. A fine pattern forming apparatus according to claim H, item 1. (8) Claim #! 1 to 1, characterized in that a carbon-containing gas is used as the introduced gas. The fine pattern forming apparatus described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56104648A JPS586133A (en) | 1981-07-03 | 1981-07-03 | Forming device for minute pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56104648A JPS586133A (en) | 1981-07-03 | 1981-07-03 | Forming device for minute pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS586133A true JPS586133A (en) | 1983-01-13 |
Family
ID=14386279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56104648A Pending JPS586133A (en) | 1981-07-03 | 1981-07-03 | Forming device for minute pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586133A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6062123A (en) * | 1983-09-06 | 1985-04-10 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of bonding pattern polymer film |
| JPS60218844A (en) * | 1984-04-13 | 1985-11-01 | Seiko Instr & Electronics Ltd | Apparatus for forming pattern film |
| WO1986002581A1 (en) * | 1984-10-26 | 1986-05-09 | Ion Beam Systems, Inc. | Focused substrate alteration |
| US4698236A (en) * | 1984-10-26 | 1987-10-06 | Ion Beam Systems, Inc. | Augmented carbonaceous substrate alteration |
| US4930439A (en) * | 1984-06-26 | 1990-06-05 | Seiko Instruments Inc. | Mask-repairing device |
| US5071671A (en) * | 1984-02-28 | 1991-12-10 | Seiko Instruments Inc. | Process for forming pattern films |
| US5086230A (en) * | 1985-04-23 | 1992-02-04 | Seiko Instruments & Electronics Ltd. | Apparatus for forming, correcting pattern |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180129A (en) * | 1981-04-27 | 1982-11-06 | Rockwell International Corp | Method and device for forming polymerized resist |
-
1981
- 1981-07-03 JP JP56104648A patent/JPS586133A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180129A (en) * | 1981-04-27 | 1982-11-06 | Rockwell International Corp | Method and device for forming polymerized resist |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6062123A (en) * | 1983-09-06 | 1985-04-10 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of bonding pattern polymer film |
| US5071671A (en) * | 1984-02-28 | 1991-12-10 | Seiko Instruments Inc. | Process for forming pattern films |
| JPS60218844A (en) * | 1984-04-13 | 1985-11-01 | Seiko Instr & Electronics Ltd | Apparatus for forming pattern film |
| US4930439A (en) * | 1984-06-26 | 1990-06-05 | Seiko Instruments Inc. | Mask-repairing device |
| WO1986002581A1 (en) * | 1984-10-26 | 1986-05-09 | Ion Beam Systems, Inc. | Focused substrate alteration |
| WO1986002774A1 (en) * | 1984-10-26 | 1986-05-09 | Ion Beam Systems, Inc. | Focused substrate alteration |
| US4698236A (en) * | 1984-10-26 | 1987-10-06 | Ion Beam Systems, Inc. | Augmented carbonaceous substrate alteration |
| US5086230A (en) * | 1985-04-23 | 1992-02-04 | Seiko Instruments & Electronics Ltd. | Apparatus for forming, correcting pattern |
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