JPS5860532A - Susceptor - Google Patents
SusceptorInfo
- Publication number
- JPS5860532A JPS5860532A JP15901081A JP15901081A JPS5860532A JP S5860532 A JPS5860532 A JP S5860532A JP 15901081 A JP15901081 A JP 15901081A JP 15901081 A JP15901081 A JP 15901081A JP S5860532 A JPS5860532 A JP S5860532A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- heater
- substrate
- heating element
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
Description
【発明の詳細な説明】
本発明は結晶成長装置のうち高周波加熱により鍋＠を得
る装置に係り、特にｉｌｌ＋温を得る発熱体の温度分布
を一様または特定の形どすることのできる発熱体の構造
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a crystal growth apparatus that obtains a ladle by high-frequency heating, and particularly relates to a heating element that can produce an ill+ temperature with a uniform or specific temperature distribution. Regarding the structure of
従来、高周波炉内で基板を保持し、加熱する発熱体とし
てカーボンなどの良導体でできた板またはかたまりが用
°ハられているが、筒周波の不均一。Conventionally, a plate or block made of a good conductor such as carbon has been used as a heating element to hold and heat the substrate in a high-frequency furnace, but the cylindrical frequency is non-uniform.
成長ガスによる冷却効果、ガス対流効果９発熱体の熱伝
導などの原因により発熱体の温度分布に不均一が生じ、
結晶成長を行う場合の基板上の温度不均一の原因として
除去すべき重大な欠点となってい九。The temperature distribution of the heating element becomes uneven due to factors such as the cooling effect of the growth gas, the gas convection effect, and the heat conduction of the heating element.
When performing crystal growth, temperature non-uniformity on the substrate has become a serious drawback that should be eliminated as a cause.
本発明の目的は、基板を直接保持する部分を不良導体（
石英）とし１発熱体である良導体を石英に接触させるこ
とにより熱を伝導させ加熱するという方式により１発熱
体の形状を変化させてサセプタの＠度外布をコントロー
ルすることを可能とするサセプタを提供するにある。The purpose of the present invention is to replace the part that directly holds the board with a bad conductor (
A susceptor that makes it possible to control the outer surface of the susceptor by changing the shape of the 1 heating element by bringing a good conductor, which is a heating element, into contact with quartz to conduct heat and heat it. It is on offer.
本発明は。The present invention is.
■ 高周波加熱は良導体に対してのみ作用し。■High frequency heating only works on good conductors.
良導体を絶縁体で被覆したとしても良導体に対する加熱
効果に影響を与えない。Even if a good conductor is covered with an insulator, the heating effect on the good conductor is not affected.
■ 熱伝導によると発熱体に離れる＃１ど温［は低下す
る。■ According to heat conduction, the temperature of #1 that leaves the heating element decreases.
と云うことに基いてなされたものである。This was done based on that.
第１図に示す縦形気相熱分解炉に応用する。この炉は反
応管中に高周波にて加熱される発熱体を兼ねる基板支持
体（サセプタ）を有し、上方から原料ガスを供給するこ
とにより基板上で原料ガスを分解、結晶成長するもので
あり。It is applied to the vertical gas phase pyrolysis furnace shown in Figure 1. This furnace has a substrate support (susceptor) in the reaction tube that also serves as a heating element heated by high frequency, and by supplying raw material gas from above, the raw material gas is decomposed and crystals are grown on the substrate. .
第１図における発熱体としては従来第２図（ａ）で示す
ようなカーボン整形して作成されたサセプタが用いられ
てきた。しかしながらこの形のサセプタではサセプタ全
体が高周波により加熱されｇＸｚ図（１））に示すよう
なサセプタ表面上の温度分布が形成されてしまう。これ
を防ぐための本発明の一実施例を第３図に示す。As the heating element in FIG. 1, a susceptor made by shaping carbon as shown in FIG. 2(a) has conventionally been used. However, in this type of susceptor, the entire susceptor is heated by high frequency waves, resulting in a temperature distribution on the susceptor surface as shown in the gXz diagram (1)). An embodiment of the present invention for preventing this is shown in FIG.
第３図において６は良導体で呂来た発熱体で良導体とし
てはカーボン粉末を用いるのが便利である。７は基板を
支持する絶縁体でできたフレームでカーボン粉末の容器
の役割もする。８は高周波によって加熱された発熱体６
からの熱の流れを表しており、６の形状からサセプタの
外側はど熱が表面に到達しに〈〈、外側の温ｋを下げる
効果がある０
このような本発明の実施例によれば［２図（ｂ）Ｋ生じ
るような温度分布を補償し、一様な温度で基板を加熱す
ることが可能となる。In FIG. 3, reference numeral 6 denotes a heating element which is a good conductor, and it is convenient to use carbon powder as the good conductor. 7 is a frame made of an insulator that supports the substrate and also serves as a container for carbon powder. 8 is a heating element 6 heated by high frequency
The figure shows the flow of heat from the outside of the susceptor due to the shape of 6, which has the effect of lowering the outside temperature k because the heat reaches the surface. It becomes possible to compensate for the temperature distribution that occurs in Figure 2 (b) and heat the substrate at a uniform temperature.
本発明によればサセプタ上の基板温度分布ｔ 一様にす
ることができるため、非常に均一な結晶成長が可能とな
る効果がある。According to the present invention, since the substrate temperature distribution t on the susceptor can be made uniform, it is possible to achieve extremely uniform crystal growth.
第１図は熱分解炉を説明する図、第２図（ａ）は従来用
いられているサセプタの断面図、第２図（ｂ）Ｆｉその
温度分布を示す図、第３図は本発明のサセプタの断面図
である。Figure 1 is a diagram explaining a pyrolysis furnace, Figure 2 (a) is a cross-sectional view of a conventionally used susceptor, Figure 2 (b) is a diagram showing its temperature distribution, and Figure 3 is a diagram of the susceptor of the present invention. It is a sectional view of a susceptor.
Claims (1)
於て、＆導体物質から成る発熱体と絶縁性物質から成る
サセプタ・フレームとを有し、骸すセグタフレームの基
板保持面と該発熱体の対向部上ｌが平行でないことを特
徴とてるサセプタ。 （噂 上記発熱体が中央部で厚く１周辺で薄いこと全特
徴とする特許請求の範囲第１項記載のサセプタ。(1) A susceptor that holds a substrate by induction heating in a high-frequency furnace has a heating element made of a conductive material and a susceptor frame made of an insulating material, and the substrate holding surface of the segment frame and the heating element A susceptor characterized in that the upper parts of the opposing parts are not parallel to each other. (Rumor) The susceptor according to claim 1, wherein the heating element is thick at the center and thin at one periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15901081A JPS5860532A (en) | 1981-10-06 | 1981-10-06 | Susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15901081A JPS5860532A (en) | 1981-10-06 | 1981-10-06 | Susceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5860532A true JPS5860532A (en) | 1983-04-11 |
Family
ID=15684266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15901081A Pending JPS5860532A (en) | 1981-10-06 | 1981-10-06 | Susceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860532A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02185973A (en) * | 1989-01-13 | 1990-07-20 | Tokyo Electron Ltd | Formation of metal silicide film |
| EP0470749A2 (en) * | 1990-08-10 | 1992-02-12 | Naraseiki Kabushiki Kaisha | Electronic combustion furnace |
| US20210341342A1 (en) * | 2020-03-19 | 2021-11-04 | Changxin Memory Technologies, Inc. | Methods for measuring temperature of wafer chuck and calibrating temperature and system for measuring temperature |
-
1981
- 1981-10-06 JP JP15901081A patent/JPS5860532A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02185973A (en) * | 1989-01-13 | 1990-07-20 | Tokyo Electron Ltd | Formation of metal silicide film |
| EP0470749A2 (en) * | 1990-08-10 | 1992-02-12 | Naraseiki Kabushiki Kaisha | Electronic combustion furnace |
| US5254822A (en) * | 1990-08-10 | 1993-10-19 | Naraseiki Kabushiki Kaisha | Electronic combustion furnace |
| US20210341342A1 (en) * | 2020-03-19 | 2021-11-04 | Changxin Memory Technologies, Inc. | Methods for measuring temperature of wafer chuck and calibrating temperature and system for measuring temperature |
| US11852542B2 (en) * | 2020-03-19 | 2023-12-26 | Changxin Memory Technologies, Inc. | Methods for measuring temperature of wafer chuck and calibrating temperature and system for measuring temperature |
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