JPS5858785A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5858785A
JPS5858785A JP56157508A JP15750881A JPS5858785A JP S5858785 A JPS5858785 A JP S5858785A JP 56157508 A JP56157508 A JP 56157508A JP 15750881 A JP15750881 A JP 15750881A JP S5858785 A JPS5858785 A JP S5858785A
Authority
JP
Japan
Prior art keywords
semiconductor laser
submount
stem
laser device
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56157508A
Other languages
Japanese (ja)
Inventor
Shigeo Sakaki
榊　重雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56157508A priority Critical patent/JPS5858785A/en
Publication of JPS5858785A publication Critical patent/JPS5858785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Abstract

PURPOSE:To use a stem as the cathode side by employing a sub-mount formed by an N type silicon board using one-part surface layer region as a P type. CONSTITUTION:A cathode lead 11 and an anode lead 12 are penetrated and fixed to the stem 1 through insulators 14, 13, and the sub-mount 3 is fastened at the center of the stem 1 through solder 2. With the submount 3, one part of the surface layer section of an upper surface has the N type silicon board with a P type resion 15, and a PN junction 17 exposed to the upper surface and an N type region are coated with an insulating film. A wiring layer 19 is shaped onto the P type region 15, and the anode electrode of a chip 4 is fixed onto the wiring layer 19 through solder 8. The wiring layer 19 and the anode lead 12 are connected by means of a wire 9, an a cathode electrode and the cathode lead 11 are connected by means of a wire 20.

Description

【発明の詳細な説明】 本発明は半導体レーザー装ｆｌｌｉＫ関する。[Detailed description of the invention] The present invention relates to a semiconductor laser device flliK.

半導体レーザーダイオード素子（以下単に素子あるいは
チップと呼ぶ。）は表裏の電極がアノード電極（＋電極
）あるいはカソード電極（−電極）となっている。この
ため、第１図に示すようＫ、ステム１に半田２を介して
固着したサブマウント３にチップ４を固定する場合、サ
ブマウント３にアノード電極５あるいはカソード電極６
の一方を接触させるようにして固定しなければならなく
なる。しかし、チップ４におけるレーザー発振部分（活
性層）７はアノード電極５側にあり、かつレーザー発振
時（発生する大量の熱をサブマウント３に速かに伝達し
て放熱を行なう必要があることから、レーザー発振部分
７をサブマウント３から遠く離すことができず、実際に
は同図で示すように、アノード電極５をサブマウント３
にソルダー８を介して固着して熱抵抗を小さくしている
。The front and back electrodes of a semiconductor laser diode element (hereinafter simply referred to as an element or chip) are an anode electrode (+ electrode) or a cathode electrode (- electrode). Therefore, when the chip 4 is fixed to the submount 3 which is fixed to the stem 1 via the solder 2 as shown in FIG.
must be fixed so that one side is in contact with the other. However, the laser oscillation part (active layer) 7 in the chip 4 is located on the anode electrode 5 side, and during laser oscillation (a large amount of heat generated needs to be quickly transferred to the submount 3 for heat dissipation). , it is not possible to separate the laser oscillation part 7 far from the submount 3, and in reality, as shown in the same figure, the anode electrode 5 is placed far away from the submount 3.
It is fixed through solder 8 to reduce thermal resistance.

しかし、このような構造では、ステム側（サブマウント
側）をカソードとすることは、熱抵抗の低減化からして
実際には採用できない欠点がある。However, in such a structure, using the stem side (submount side) as a cathode has the disadvantage that it cannot actually be adopted because of the reduction in thermal resistance.

したがって、本発明の目的はステムをカソードとするこ
とができ、かつ熱抵抗が小さな構造の半導体レーザー装
置を提供することにある。Accordingly, an object of the present invention is to provide a semiconductor laser device having a structure in which the stem can be used as a cathode and the thermal resistance is small.

一方、第１図で示す従来の半導体レーザー装置にあって
は、サブマウント３は絶縁性のセラミックあるいはＢｅ
Ｏを用いている。しかし、これらの材料は高価であるこ
とと、加工性が悪い欠点がある。また、サブマウント３
０表面にはアノード用のワイヤ９を引き出すためにメタ
ライズ層１０を設けなければならず、このメタライズ層
形成にも多くの工数を要し、コストが高くなる。On the other hand, in the conventional semiconductor laser device shown in FIG. 1, the submount 3 is made of insulating ceramic or Be
O is used. However, these materials have the drawbacks of being expensive and having poor processability. Also, submount 3
A metallized layer 10 must be provided on the 0 surface to draw out the anode wire 9, and the formation of this metallized layer also requires a large number of man-hours, resulting in high cost.

したがって、本発明の他の目的は安価な構造の半導体レ
ーザー装置を提供することＫある。Therefore, another object of the present invention is to provide a semiconductor laser device with an inexpensive structure.

このような目的を達成するために本発明は、−面にアノ
ード電極、他面にカソード電極を有する半導体レーザー
素子を一方の電極を介してサブマウントに固着してなる
半導体レーザー装置において、前記サブマウントは一部
表層領域をＰ導電型領域とするＮ導電極型のシリコン板
で形成するとともに、このＰ導電型領域上に半導体レー
ザー素子をアノード電極を介して固定するものであって
、以下実施例により本発明を説明するっ 第２図は本発明の一実施例くよる半導体レーザー装置の
要部を示す断面図である。同図に示すように、銅板から
なるステム１にはカソードリード１１およびアノードリ
ード１２が貫通状態で固定されている。アノードリード
１２は絶縁体１３を介し、カソードリード１１は導電体
１４を介してステム１に固定されている。また、ステム
１の中央には半田２を介してサブマウント３が固定され
ている。このサブマウント３はシリコン板からなり、上
面の表層部の一部にＰ導電型領域１５を有するＮ導電型
基板１６からなっている。また、サブマウント３の上面
に露出するＰＮ接合１７およびＮ導電型領域は絶縁１１
１［１８で被われている。また、Ｐ導電型領域１５上に
は配線層１９が形成され、この配線層１９上にソルダー
８を介してチップ４が固着される、チップ４はアノード
電極５を介してサブマウント３に固定される。このため
、レーザー発掘部分７はサブマウント３に近くなるため
、レーザー発振部分７から発生する熱は速やかにサブマ
ウント３．ステム１と伝わって放熱される。また、露出
する配線層１９とアノードリード１２とはワイヤ９で接
続されている。また、カソード電極６とカソードリード
１１とはワイヤ２゜で接続されている。In order to achieve such an object, the present invention provides a semiconductor laser device in which a semiconductor laser element having an anode electrode on one side and a cathode electrode on the other side is fixed to a submount via one electrode. The mount is formed of an N-conductivity electrode type silicon plate with a part of the surface region being a P-conductivity type region, and a semiconductor laser element is fixed onto this P-conductivity type region via an anode electrode. The present invention will be explained by way of example. FIG. 2 is a sectional view showing the main parts of a semiconductor laser device according to an embodiment of the present invention. As shown in the figure, a cathode lead 11 and an anode lead 12 are fixed to a stem 1 made of a copper plate in a penetrating state. The anode lead 12 is fixed to the stem 1 via an insulator 13, and the cathode lead 11 is fixed to the stem 1 via a conductor 14. Further, a submount 3 is fixed to the center of the stem 1 via solder 2. This submount 3 is made of a silicon plate, and is made of an N-conductivity type substrate 16 having a P-conductivity type region 15 in a part of the upper surface layer. Furthermore, the PN junction 17 and the N conductivity type region exposed on the upper surface of the submount 3 are insulated by the insulator 11.
1 [covered by 18. Further, a wiring layer 19 is formed on the P conductivity type region 15, and the chip 4 is fixed on the wiring layer 19 via a solder 8. The chip 4 is fixed to the submount 3 via an anode electrode 5. Ru. Therefore, since the laser excavated portion 7 is close to the submount 3, the heat generated from the laser oscillation portion 7 is quickly transferred to the submount 3. Heat is radiated through the stem 1. Further, the exposed wiring layer 19 and the anode lead 12 are connected by a wire 9. Further, the cathode electrode 6 and the cathode lead 11 are connected by a wire 2°.

このような半導体レーザー装置はステム１およびチップ
４のカソード電極６にマイナス（＝）を、アノード電極
５にプラス（＋）の電圧を印加させることによって、レ
ーザー発振部分７からレーザー光をチップ端面から出射
させる。この際、シリコン板は逆方向に電圧が加わるた
め、ＰＮ接合には電流は流れない。また、Ｐ導電型領域
１５を部分的に設けることによって、浮遊容量の低減を
図っている。In such a semiconductor laser device, by applying a negative (=) voltage to the cathode electrode 6 of the stem 1 and the chip 4 and a positive (+) voltage to the anode electrode 5, laser light is emitted from the laser oscillation part 7 from the chip end face. Make it emit. At this time, since voltage is applied to the silicon plate in the opposite direction, no current flows through the PN junction. Further, by partially providing P conductivity type regions 15, stray capacitance is reduced.

このような実施例によれば、レーザー発振部分７がサブ
マウント３に近くなるようにアノード電極５を介してサ
ブマウント３に固着し、熱抵抗の低減を図るとともに、
サブマウント３をＮ導電型基板１６の表層部の一部にト
導電型領域１５を有する構造としていることから、ステ
ム１をカソードとすることができる。According to such an embodiment, the laser oscillation portion 7 is fixed to the submount 3 via the anode electrode 5 so as to be close to the submount 3, thereby reducing thermal resistance.
Since the submount 3 has a structure in which a part of the surface layer of the N conductivity type substrate 16 has a G conductivity type region 15, the stem 1 can be used as a cathode.

また、サブマウント３はシリコン板で形作られ、かつこ
のシリコン板は配線層形成をも含む加工プロセスは確立
され安価に製造することができる。Further, the submount 3 is formed of a silicon plate, and the processing process for this silicon plate, including the formation of wiring layers, has been established and can be manufactured at low cost.

なお、本発明は前記実施例に限定されるものではなく、
本発明の技術思想に基いて変形可能である。Note that the present invention is not limited to the above embodiments,
Modifications are possible based on the technical idea of the present invention.

以上のようＫ、本発明によれば、ステムをカソードとす
ることができるとともに、放熱効果が大きくかつ製造コ
ストが安価な半導体レーザー装置を提供することができ
る。As described above, according to the present invention, it is possible to provide a semiconductor laser device in which the stem can be used as a cathode, the heat dissipation effect is large, and the manufacturing cost is low.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体レーザー装置の要部を示す一部断
面図、第２図は本発明の一実施例による半導体レーザー
装置の要部を示す一部断面図である。 １・・ステム、３・・・サブマウント、４・・・チップ
、５・・・アノード電極、６・・・カソード電極、７・
・・レーザー発振部分、１１．１２・　リード、１５・
・・Ｐ導電型領域、１６・・・Ｎ導電型基板、１９・・
・配線層、９．２０・・・ワイヤ。 代理人　弁理士　　薄　１）利　幸FIG. 1 is a partial cross-sectional view showing the main parts of a conventional semiconductor laser device, and FIG. 2 is a partial cross-sectional view showing the main parts of a semiconductor laser device according to an embodiment of the present invention. 1... Stem, 3... Submount, 4... Chip, 5... Anode electrode, 6... Cathode electrode, 7...
・・Laser oscillation part, 11.12・ Lead, 15・
...P conductivity type region, 16...N conductivity type substrate, 19...
- Wiring layer, 9.20... wire. Agent Patent Attorney Susuki 1) Toshiyuki

Claims (1)

【特許請求の範囲】[Claims] １、−面にアノード電極、他面にカソード電極を有する
半導体レーザー素子を一方の電極を介してサブマウンＨ
Ｃ固着してなる半導体レーザー装置において、前記サブ
マウントは一部表層領域なＰ導電型領域とするＮ導電型
のシリコン板で形成するとともに、このＰ導電型領域上
圧半導体レーザー素子をアノード電極を介して固定する
ことを特徴とする半導体レーザー装置。1. A semiconductor laser element having an anode electrode on the negative side and a cathode electrode on the other side is attached to the submount H through one electrode.
In the semiconductor laser device in which C is fixed, the submount is formed of an N conductivity type silicon plate with a part of the surface area as a P conductivity type region, and the anode electrode is connected to the upper pressure semiconductor laser device in the P conductivity type region. A semiconductor laser device characterized in that it is fixed through a semiconductor laser device.
JP56157508A 1981-10-05 1981-10-05 Semiconductor laser device Pending JPS5858785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56157508A JPS5858785A (en) 1981-10-05 1981-10-05 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56157508A JPS5858785A (en) 1981-10-05 1981-10-05 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5858785A true JPS5858785A (en) 1983-04-07

Family

ID=15651206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56157508A Pending JPS5858785A (en) 1981-10-05 1981-10-05 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5858785A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162863U (en) * 1986-04-04 1987-10-16
KR100293472B1 (en) * 1998-01-10 2001-08-07 구자홍 submount of laser diode
WO2021001914A1 (en) * 2019-07-02 2021-01-07 三菱電機株式会社 Semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162863U (en) * 1986-04-04 1987-10-16
KR100293472B1 (en) * 1998-01-10 2001-08-07 구자홍 submount of laser diode
WO2021001914A1 (en) * 2019-07-02 2021-01-07 三菱電機株式会社 Semiconductor laser device
JPWO2021001914A1 (en) * 2019-07-02 2021-01-07

Similar Documents

Publication Publication Date Title
US5479029A (en) Sub-mount type device for emitting light
US4314270A (en) Hybrid thick film integrated circuit heat dissipating and grounding assembly
US3740617A (en) Semiconductor structure and method of manufacturing same
JPS59121871A (en) Semiconductor device
KR890002811B1 (en) Laser diode
JPS5858785A (en) Semiconductor laser device
JPH08274228A (en) Semiconductor mounting board, power semiconductor device and electronic circuit device
JP3726586B2 (en) SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CIRCUIT BOARD, ELECTRONIC DEVICE
US3828229A (en) Leadless semiconductor device for high power use
KR940003436B1 (en) Semiconductor light emitting device
JPS60153188A (en) Semiconductor laser output device utilizing heat pipe
JPH0142832B2 (en)
JPS5826675B2 (en) Hand tie souchi
JPS5988877A (en) Light emitting semiconductor device and light emitting element used for assembly thereof
JPS5870584A (en) Semiconductor device
JPS5917273A (en) Resin sealed semiconductor device
KR100463957B1 (en) Method for manufacturing a light-emitting diode device
JP2765632B2 (en) Package for semiconductor device
JPH0351992Y2 (en)
US3521134A (en) Semiconductor connection apparatus
JPH04171848A (en) Semiconductor device
JPH0199266A (en) Semiconductor light emitting device
JPS6053088A (en) Semiconductor device
JPH03101256A (en) Semiconductor device
US3325701A (en) Semiconductor device