JPH0199266A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH0199266A JPH0199266A JP62258631A JP25863187A JPH0199266A JP H0199266 A JPH0199266 A JP H0199266A JP 62258631 A JP62258631 A JP 62258631A JP 25863187 A JP25863187 A JP 25863187A JP H0199266 A JPH0199266 A JP H0199266A
- Authority
- JP
- Japan
- Prior art keywords
- led
- substrate
- light emitting
- electrode
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000012780 transparent material Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000002902 bimodal effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241000448472 Gramma Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光フアイバ通信用の光源として応用される
半導体発光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light emitting device applied as a light source for optical fiber communication.
第３図は、従来の半導体発光装置の断面図であり、図に
おいて、（１）は金属で形成されたマイナス電極、（２
）は金属で形成されたプラス電ｆｄｉ、（３）は発射出
窓、（４）はＬＥＤの基板、（５）はＬＥＤの活性層で
ある。FIG. 3 is a cross-sectional view of a conventional semiconductor light emitting device. In the figure, (1) is a negative electrode made of metal, (2)
) is a positive electric current fdi made of metal, (3) is an emission bay window, (4) is an LED substrate, and (5) is an active layer of the LED.
次に動作について説明する。ＬＥＤのマイナス電極（１
）とプラス電極（２）に電圧を印加することによりＩＩ
Ｄ内部の活性層（６）で生じた活性層に垂直な方向の光
は、基板（４）を透過して発射出窓（３）から外部に取
り出される。第４図は、従来の活性層の電界分布を示す
グラフである。従来の半導体発光装置のような構造では
発射出窓（３）にマイナス電極（１）がないために、電
界分布が双峰状になる。Next, the operation will be explained. LED negative electrode (1
) and the positive electrode (2) by applying a voltage to
Light generated in the active layer (6) inside D in a direction perpendicular to the active layer is transmitted through the substrate (4) and extracted to the outside through the emission window (3). FIG. 4 is a graph showing the electric field distribution of a conventional active layer. In the structure of a conventional semiconductor light emitting device, since the emission window (3) does not have a negative electrode (1), the electric field distribution becomes bimodal.
従来の半導体発光装置は以上のように構成されているの
で活性層の電界分布が双峰状となり、さらには発光領域
の光強度分布も双峰状となるため、光ファイバへの結合
効率が悪いという問題点があった。Since conventional semiconductor light emitting devices are configured as described above, the electric field distribution in the active layer is bimodal, and the light intensity distribution in the light emitting region is also bimodal, resulting in poor coupling efficiency to the optical fiber. There was a problem.
この発明は上記のような問題点を解消するためになされ
たもので、発光領域の光強度分布を円弧状にできるとと
もに、光ファイバへの結合効率を高めることができる半
導体発光装置を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and aims to provide a semiconductor light-emitting device that can make the light intensity distribution of the light-emitting region arcuate and increase the coupling efficiency to an optical fiber. purpose.
この発明に係る半導体発光装置は、基板を椀状に形成す
るとともに発光領域をすべて透明な電極、例えば、導電
性透明樹脂等で覆い、それを電極としたものである。In the semiconductor light emitting device according to the present invention, the substrate is formed into a bowl shape, and the entire light emitting region is covered with a transparent electrode, such as a conductive transparent resin, which is used as an electrode.
この発明における活性領域を透明なｗ１８ｉで覆うこと
により活性層の電界分布が円弧状なり、さらには発光領
域の光強度分布も円弧状になり、光ファイバへの結合効
率を高める。In this invention, by covering the active region with transparent w18i, the electric field distribution in the active layer becomes arcuate, and the light intensity distribution in the light emitting region also becomes arcuate, thereby increasing the coupling efficiency to the optical fiber.
以下、この発明を図を用いて説明する。第１図はこの発
明の一実施例による半導体発光装置の断面図である。Hereinafter, this invention will be explained using figures. FIG. 1 is a sectional view of a semiconductor light emitting device according to an embodiment of the present invention.
第１図において、（１）は透明電極の上に形成されたワ
イヤ接着用のマイナス電極（２）は金属で形成されたプ
ラス電極、（５）はＬＥＤ内部に形成された活性層、（
３）は発射出窓、（４）はＬＥＤの基板、（６）は例え
ば導電性透明樹脂等で形成された透明ｗｔ極である。In FIG. 1, (1) is a negative electrode for wire bonding formed on a transparent electrode (2) is a positive electrode made of metal, (5) is an active layer formed inside the LED, (
3) is an emission window, (4) is an LED substrate, and (6) is a transparent wt pole made of, for example, conductive transparent resin.
次に動作について説明する。第１図において、グラフ［
極（２）とマイナス電極（１）の間に電圧が印加される
と、活性層（５）で発光が生じ、基板（４）を通つて、
発射出窓（３）を通って外部に取り出される。Next, the operation will be explained. In Figure 1, the graph [
When a voltage is applied between the pole (2) and the negative electrode (1), light emission occurs in the active layer (5) and passes through the substrate (4).
It is taken out to the outside through the ejection bay window (3).
ここで、この発明においては基板（４）を椀状に形成し
て、その上に透明！ｌ！ ｉ ＋６）を形成しているの
で、活性７１（５）の中央はど抵抗が小さくなり、電界
分布は第２図のように円弧状になる。Here, in this invention, the substrate (4) is formed into a bowl shape, and transparent! l! i +6), the resistance at the center of the active layer 71(5) becomes small, and the electric field distribution becomes arcuate as shown in FIG.
なお、上記実施例では、面発光型のｉＤに透明ｗｔ極を
用いたものを示したが、ＬＥＤの代わりに面発光型の半
導体レーザ（ＩＪ） ： １ａｓｅｒｄｉｏｄｅ ）に
透明電極を用いてもよい。In the above embodiment, a surface-emitting type iD using a transparent wt pole was shown, but a transparent electrode may be used in a surface-emitting type semiconductor laser (IJ) instead of an LED.
以上のように、この発明によれば面発光型のＬＥＤの基
板を椀状に形成し、発射出窓も透明電極で覆ったので、
発光領域の光強度分布を円弧状にでき、光ファイバへの
結合効率の高いＬＥＤを得られる効果がある。As described above, according to the present invention, the substrate of the surface emitting type LED is formed into a bowl shape, and the emission window is also covered with a transparent electrode.
This has the effect of making the light intensity distribution of the light emitting region arcuate and providing an LED with high coupling efficiency to the optical fiber.
第１図はこの発明の一実施例による半導体発光装置の断
面図、第２図はこの発明における活性層の電界分布を示
すグラフ、第３図は従来の半導体発光装置の断面図、第
４図は、従来の活性層の電界分布を示すグラフである。
（１）はマイナス電極、（２）はグラマＩ！！極、（３
）は発光領域、（４）は基板、（５）は活性、１、（６
）は透明電極である。
なお、図中同一符号は同一、又は相当部分を示す。FIG. 1 is a cross-sectional view of a semiconductor light-emitting device according to an embodiment of the present invention, FIG. 2 is a graph showing the electric field distribution of the active layer in the present invention, FIG. 3 is a cross-sectional view of a conventional semiconductor light-emitting device, and FIG. is a graph showing the electric field distribution of a conventional active layer. (1) is the negative electrode, (2) is Gramma I! ! pole, (3
) is the light emitting region, (4) is the substrate, (5) is the active region, 1, (6
) is a transparent electrode. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
面発光型の発光ダイオードにおいて、上記凹部を椀状と
し、上記基板側の電極が導電性透明物質であることを特
徴とする半導体発光装置。A surface-emitting type light emitting diode in which an emitting window is provided in a recess formed on the substrate side of the light emitting part, wherein the recess is bowl-shaped and the electrode on the substrate side is made of a conductive transparent material. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258631A JPH0199266A (en) | 1987-10-13 | 1987-10-13 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62258631A JPH0199266A (en) | 1987-10-13 | 1987-10-13 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0199266A true JPH0199266A (en) | 1989-04-18 |
Family
ID=17322955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62258631A Pending JPH0199266A (en) | 1987-10-13 | 1987-10-13 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0199266A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003523636A (en) * | 2000-02-15 | 2003-08-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Semiconductor device emitting radiation and method of manufacturing the same |
| US7195942B2 (en) | 2000-02-15 | 2007-03-27 | Osram Gmbh | Radiation emitting semiconductor device |
| JP2019165198A (en) * | 2018-03-19 | 2019-09-26 | 株式会社リコー | Surface emitting laser array, detection device, and laser device |
-
1987
- 1987-10-13 JP JP62258631A patent/JPH0199266A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003523636A (en) * | 2000-02-15 | 2003-08-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Semiconductor device emitting radiation and method of manufacturing the same |
| US7195942B2 (en) | 2000-02-15 | 2007-03-27 | Osram Gmbh | Radiation emitting semiconductor device |
| US7205578B2 (en) * | 2000-02-15 | 2007-04-17 | Osram Gmbh | Semiconductor component which emits radiation, and method for producing the same |
| JP2019165198A (en) * | 2018-03-19 | 2019-09-26 | 株式会社リコー | Surface emitting laser array, detection device, and laser device |
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