JPS5858284A - Plasma treating device - Google Patents

Abstract

PURPOSE:To provide a plasma treating device which makes layers to be treated uniform by generation of disturbance in the distributions of plasma as well by supplying specific gases which generate plasma in such a way as to generate turbulent flow around the object to be treated. CONSTITUTION:The degree of vacuum in a treating chamber 1 is kept at 10<-2>- several Torr under supplying of gases, and a desired voltage is applied between electrodes 4 and 5 to generate plasma, the gaseous ions of which are made incident to the circumferential surface of a long sized material W, whereby the surface of said material is treated. In this case, the material W is transferred continuously or intermittently in an arrow direction, so as to generate turbulence in the gaseous flow around the material W, whereby the surface of siad material is treated uniformly. To this end, plural pieces of supply nozzles 7N, 8N which are so directed a to generate gaseous flow in the long axis direction of the material W and in the circular circumferential direction thereof from respective supplying devices 7, 8 for gases are provided. Turbulence is generated in the distributions of plasma as well together with the turbulence of the gaseous flow, whereby the surface treated layers of the material W are made uniform.

Description

【発明の詳細な説明】 本発明は、ガスによるプラズマ中に被処理材を配置し−
このプラズマによって被処理材の表面処理を行なうプラ
ズマ処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention involves placing a material to be treated in a gas plasma.
The present invention relates to a plasma processing apparatus that performs surface treatment on a material to be processed using this plasma.

、ビの種の表面処■装置は、真空路ｍｍ内にたとえばア
ルゴンガスやヘリウムガスなどのガスを倶紬す・るとと
もに電櫃聞に高層波電圧を印加してこの特定ガスのプラ
ス！１を発生させ、そのプラズマ中に被処理材を配置し
ガスイオンをこの被処理付表−に入射させることによっ
て表面処理を行なう装置である。表面処ｓＩｃは耐水性
を増大させる処理、接着性を増大する処理さらにはａｍ
硬化処処理どがある。The device for surface treatment of seeds, for example, injects a gas such as argon gas or helium gas into the vacuum path, and applies high wave voltage to the electric chamber to increase the concentration of this specific gas. This is an apparatus that performs surface treatment by generating plasma 1, placing a material to be treated in the plasma, and causing gas ions to be incident on the surface to be treated. Surface treatments sIc include treatments that increase water resistance, treatments that increase adhesion, and am
There are hardening treatments.

このような表面処理において、処理を均一に行なうため
には、特に被処理物が長い材料の場合これなプラズマ中
で回転させるのが効果的である。In such surface treatment, in order to perform the treatment uniformly, it is effective to rotate the object in plasma, especially when the object to be treated is a long material.

しかしながら、この種の材料を回転させながら処理室内
を真空状態に艙持して挿通（移送）するの１１１１１１
１ はｇＩ！際上＠曙である。これは真空状態を艙−持する
ためのシール機構を彼雑にし特殊な目板駆動ｌｌ１ｗｌ
１１．１１ を必要として装置を傭輸かつ大形化するからであ□ る。However, it is difficult to insert (transfer) this type of material while rotating it and holding it in a vacuum state in the processing chamber.
1 is gI! It's definitely @Akebono. This complicates the sealing mechanism to maintain the vacuum state and requires a special batten drive.
11.11 This is because the equipment needs to be hired and made larger.

本発明は以上の点にかんがみ、被処理物の周囲にプラズ
マを発生させる特定ガスをガスの流れに乱れが生じるよ
うに供給することによりプラズマ′の分布にも乱れを生
じさせ１その結果として表面処理層の均一化を達成する
ことかで鎗る装置を提供したものである。In view of the above points, the present invention supplies a specific gas that generates plasma around the object to be processed so as to cause disturbance in the flow of the gas, thereby causing disturbance in the distribution of the plasma. The present invention provides a device for slicing by achieving uniformity of the treated layer.

以下図示実施例を説明する。The illustrated embodiment will be described below.

１１において、ｌは処理室で、その左右両端部には被処
理材としての棒状材料Ｗを処理！ｌｌ内を気密に艙持し
つつ矢印方向に挿通させることかでｔ番シール―構２．
３が設置されている。１３は排気ポンプで、排気パイプ
２１を介して環状排気―２０が接続されており１その排
気用ノズル２０Ｍを介して処理ｍｌ内を高真空、たとえ
ば１０”Ｔ・ｒｒ１１度に排気する。排気ポンプには油
回転ポンプ、メカ品カルブースタポンプ、ターが分子ｌ
ンプなどの組み合わせが使用される。In 11, l is a processing chamber, and the rod-shaped material W as the material to be processed is processed at both left and right ends of the processing chamber! 2. Insert the seal in the direction of the arrow while keeping it airtight.
3 is installed. Reference numeral 13 denotes an exhaust pump, which is connected to an annular exhaust 20 via an exhaust pipe 21, and evacuates the processing ml to a high vacuum, for example, 10"T/rr 11 degrees, through its exhaust nozzle 20M. Exhaust pump There is an oil rotary pump, a mechanical booster pump, and a molecular
Combinations such as amps are used.

４．５は長尺材料Ｗをはさんで処１１１！！１内に互い
に対＾配筐された電極で、電１ｉ４は高周波電源−に、
また電１１５は処１１１ｉ１１（アース側）に接続宴れ
ている。4.5 is where the long material W is sandwiched 111! ! With electrodes arranged in pairs with each other in 1, the power 1i4 is connected to a high frequency power source.
Also, the power line 115 is connected to the ground side 111i11 (earth side).

〒、８は長尺材料貰が中心部を貫通可能Ｅ形成された環
状ガス供ＩＩｈ暮で、プラズマを電ｗ４１５１１に生成
するための特走のガスを処理ｉｌｌ内に供給するもので
ある。ガス供給器フ、８はガス源１９１８を介して接続
されている。〒, 8 is an annular gas supply II which is formed so that a long material can pass through the center, and is used to supply a special gas for generating plasma into the processing ill. Gas supply fan 8 is connected via gas source 1918.

９．１０はそれぞれ供給パイプ１フ、１８に介設された
電ｌｌ岡閉弁で、制御Ｉ＃１４からの信号により交互に
作動するソレノイド１１．１５！Ｅよって駆動され、そ
れぞれのガス流通をオン・オフ制御する。１５はガス流
量コントローラである。9.10 are electric closing valves installed in supply pipes 1 and 18, respectively, and solenoids 11.15 which are activated alternately by signals from control I#14! E to control on/off of each gas flow. 15 is a gas flow controller.

以上の構成において、ガスの供給が行なわれて処理室の
真空度がｌＯ″″２Ｔｏｒｒから′ＩｋＴｏｒｒにされ
各電極番、５間にｌ１Ｆｒ定の電圧が印加されると、プ
ラズマが生成され１そのガスイオンが長尺材料Ｗの層表
面に入射されて表面処理が行なわれる。材料Ｗが連続的
に矢印方向に移送される場合は表面処理は連続的に行な
われることになり、また間欠的に移送される場合は処１
１１１１内の区間域ごとに表面処理が行なわれる。いず
れにせよ、表１１Ｊ＆聰は均一に行なわれることが重要
であるが、本発明はこれをプラズマを発生させるガスの
供給機購の被着によって達成したものである。。すなわ
ち、長尺材料Ｗ周辺のガスの流れ（乱れを生ぜしめるよ
うにガスを供給して表面処理を均一化させるようにした
もので、そのために特殊なガス供給器特に供給ノズルの
構成を採用したものである。In the above configuration, when gas is supplied and the vacuum degree of the processing chamber is changed from 1O''''2 Torr to 'IkTorr and a constant voltage of 11Fr is applied between each electrode number, 5, plasma is generated. Gas ions are incident on the layer surface of the elongated material W to perform surface treatment. When the material W is continuously transferred in the direction of the arrow, the surface treatment is performed continuously, and when the material W is transferred intermittently, the surface treatment is performed in the process 1.
Surface treatment is performed for each interval area within 1111. In any case, it is important that Table 11 is uniformly performed, and the present invention achieves this by using a gas supply machine to generate plasma. . In other words, the gas is supplied so as to cause turbulence (turbulence) in the gas flow around the long material W, thereby making the surface treatment uniform.For this purpose, a special gas supply device, especially the configuration of the supply nozzle, is adopted. It is something.

ガス供給＠７．８は第２図、第３図に示すように環状を
なしそれぞれ供給パイプ１）、１８の上端部に接続され
ている。各供給器フ、８は棒状材料Ｗの長軸方向かつ円
周目方向にガスの流れを生ぜしめるように指向された複
ＷｋＩＩ（図では６個）の供給ノズルフ璽、８Ｍを有す
る。The gas supply @7.8 has an annular shape as shown in FIGS. 2 and 3, and is connected to the upper ends of the supply pipes 1) and 18, respectively. Each feeder nozzle 8 has multiple WkII (six in the figure) feed nozzles 8M oriented to produce a gas flow in the longitudinal direction of the rod-shaped material W and in the circumferential direction.

供給ノズル７Ｎ１８夏は更に多方両性をも有し、特にガ
ス供給器フ側ではガスが周囲外方に指向され番ように構
成され、ガス供給ＩｌＢ傭では周囲内方肉に指向される
ように構成されている。そして前述のようにガス供給４
１７．８は交互にガスを供給するよう構成されているか
ら、供給ノズル７Ｎ％８Ｍからガスが噴射されると材料
Ｗの周囲にはガスの乱流を生じ、電極４．５間で生成さ
れるプラズマも乱れた状態となり材料百の表面へのイオ
ンの入射もランダムとなり結果として表面処理の均一化
が達成される。The supply nozzle 7N18 also has both sides, and in particular, on the gas supply side, the gas is directed outward, and on the gas supply side, the gas is directed towards the inside of the surroundings. has been done. And as mentioned above gas supply 4
17.8 is configured to supply gas alternately, so when gas is injected from the supply nozzle 7N%8M, a turbulent flow of gas is generated around the material W, and a gas is generated between the electrodes 4.5. The resulting plasma becomes turbulent, and ions are randomly incident on the surface of the material, resulting in uniform surface treatment.

［１１１１４からのソレノイド１１．１２への作動信号
の切換間隔（時間）を調整することにより、ガス供給４
１７．８からのガス供給時間を変え乱流状態をｓｉｘす
ることがで参る。また開閉弁９．１０の開放時間を調節
して乱流状態を調整することも可能である。なお、図示
しないがガス供給器フ、８と電極番、５０間でガスを電
場内に効率よく案内導入するガイド部材を配備してもよ
い。[By adjusting the switching interval (time) of the activation signal from 11114 to solenoid 11.12, gas supply 4
It is possible to change the gas supply time from 17.8 to six times the turbulent flow state. It is also possible to adjust the turbulence state by adjusting the opening time of the on-off valves 9 and 10. Although not shown, a guide member may be provided between the gas supply device 8 and the electrode 50 to efficiently guide and introduce the gas into the electric field.

本発明は上述の構成以外にも種々の変形寮施例が可能で
ある。たとえば図示のガス供給機構ではガス供給系を２
個として交互にガスを供給する□構成であるが、ノズル
を首振り可変形に□Ｗ′處すれば１供給系でも目的を達
成することができる。またガス供給−の形状も完全な環
状である必要はなく半円状のものを組み合わせ、あるい
は債数個を組み合わせるようにしてもよい。The present invention allows various modified dormitory embodiments in addition to the above-described configuration. For example, in the gas supply mechanism shown in the figure, the gas supply system is
Although the configuration is such that gas is supplied alternately individually, the purpose can be achieved even with a single supply system if the nozzle is made variable in swing □W'. Further, the shape of the gas supply does not have to be a perfect ring, but may be a combination of semicircular shapes or several bonds.

処理室の形状も種々前えられ電極も図示例のような室内
設置形のほか、室外設置形とすることもできる。The shape of the processing chamber can be varied, and the electrodes can be installed not only indoors as shown in the drawings, but also outdoors.

被処理材の具体的な一例としては電線を被覆したぎりエ
チレンが挙げられるが、他の円筒材料さらには角材料そ
の他の形状の材料でもよい。A specific example of the material to be treated is ethylene as long as it covers the electric wire, but other cylindrical materials, rectangular materials, and other shaped materials may also be used.

ノズルの形状も図示のような円筒状のものでなく、先端
部に多孔板を付設しノズル先端からガスを細い噴流とし
て流出させることもできる。The shape of the nozzle is also not cylindrical as shown, but a perforated plate may be attached to the tip of the nozzle so that the gas flows out as a thin jet from the tip.

以上のように、本発明によれば被処理物の表面処理を均
一に行なうことかでき、この種の表面処理装置としての
性能を著しく陶土させることかでする。As described above, according to the present invention, the surface of the object to be treated can be uniformly treated, and the performance of this type of surface treatment apparatus is significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例の概略縦断ｉＩｉｉｉｗｉ、
第ａｍ、第３１ｉ！Ｊは要部の構成を示す図で、それぞ
れ（１）図は（ム）図の矢印方肉から見た図である。 １・・・処理型、　　　　２．３・・・シール機構、４
．５・・・電極、　　６・・・高周波電源、７．８・・
・ガス供給器、 フ舅％８Ｍ−・Φガス供給ノズル、 ９．１０・拳φ電磁弁、 １１．１２・＠ｅソレノイド、 ：Ｌ３−−−排気ｌンプ、 １４・・・制御器、 １６、ｌ’７．１８・や・ガス供給パイプ、１９・・・
ガス源、　　２０・・・ガス排気器。FIG. 1 is a schematic longitudinal cross-section of an embodiment of the present invention.
31st am, 31st i! J is a diagram showing the configuration of the main part, and Figure (1) is a view seen from the direction of the arrow in Figure (M). 1... Processing type, 2.3... Seal mechanism, 4
．． 5... Electrode, 6... High frequency power supply, 7.8...
・Gas supply device, holder % 8M-・Φ gas supply nozzle, 9.10・Fist φ solenoid valve, 11.12・＠e solenoid, :L3---Exhaust pump, 14...controller, 16 , l'7.18・ya・gas supply pipe, 19...
Gas source, 20... gas exhaust device.

Claims (1)

【特許請求の範囲】[Claims] 処理室内における特定ガスのプラズマ中に被処理材を配
置し、前記プラズマによるガスイオンを前記被ＩＩ＆環
材の表面に入射させることによって表面処理を行なう装
置において、前記プラズマを生ＩＩ＆させる特定ガスを
前記被処理材の周囲にガスの乱流が生じるようにして前
記処理室内に供給するＩ大供給機構を設けたことを特徴
とするプラズマＪＩＩｌｌｌ装置。In an apparatus that performs surface treatment by placing a material to be treated in plasma of a specific gas in a processing chamber and making gas ions from the plasma incident on the surface of the material to be treated, a specific gas is used to generate the plasma. A plasma JIIll apparatus characterized in that a large I supply mechanism is provided for supplying gas into the processing chamber so as to generate a turbulent flow of gas around the material to be processed.