JPS5687331A - Reducing furnace for solder-treatment - Google Patents

Reducing furnace for solder-treatment

Info

Publication number
JPS5687331A
JPS5687331A JP16348679A JP16348679A JPS5687331A JP S5687331 A JPS5687331 A JP S5687331A JP 16348679 A JP16348679 A JP 16348679A JP 16348679 A JP16348679 A JP 16348679A JP S5687331 A JPS5687331 A JP S5687331A
Authority
JP
Japan
Prior art keywords
furnace
gas
ejected
reduced gas
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16348679A
Other languages
Japanese (ja)
Inventor
Shozo Nemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16348679A priority Critical patent/JPS5687331A/en
Publication of JPS5687331A publication Critical patent/JPS5687331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To uniform a hydrogen gas in the furnace by a method wherein a shielding plate is installed on the way extending from a nozzle for the reduced gas to an exhaust port of the furnace, in the reducing furnace where a reduced gas is ejected from the central part of the furnace body and a semiconductor pellet is applied a solder treatment. CONSTITUTION:A nitrogen gas is ejected from supply ports 4, 5 for the nitrogen gas, curtains are formed by the nitrogen gas at an inlet and outlet of the furnace 1 and then, such a reduced gas as the hydrogen gas is ejected from the nozzle 2 into the furnace 1. The reduced gas ejected into the furnace 1 is discharged in sequence from the exhaust ports 6, 7. At this time, if teflon sheets having an area as large as capable of covering a passage of the furnace 1 is kept hung from the ceiling of the furnace 1 in curtain-shape around the exhaust ports 6, 7, the reduced gas is hindered from moving in and as a result, the concentration of the reduced gas between the teflon sheets 9 is increased and made uniform. By applying a solder treatment in the reducing furnace in this way, a uniform soldering can be attained.
JP16348679A 1979-12-18 1979-12-18 Reducing furnace for solder-treatment Pending JPS5687331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16348679A JPS5687331A (en) 1979-12-18 1979-12-18 Reducing furnace for solder-treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16348679A JPS5687331A (en) 1979-12-18 1979-12-18 Reducing furnace for solder-treatment

Publications (1)

Publication Number Publication Date
JPS5687331A true JPS5687331A (en) 1981-07-15

Family

ID=15774775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16348679A Pending JPS5687331A (en) 1979-12-18 1979-12-18 Reducing furnace for solder-treatment

Country Status (1)

Country Link
JP (1) JPS5687331A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866338A (en) * 1981-10-15 1983-04-20 Toshiba Corp Semiconductor mount device
JPS5990936A (en) * 1982-10-08 1984-05-25 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド Method of bonding ultrasmall electronic chip
JPS59182532A (en) * 1983-04-01 1984-10-17 Shinkawa Ltd Heater for bonding device
JPS6037737A (en) * 1983-08-11 1985-02-27 Toshiba Corp Pellet mounting apparatus
JPS63239957A (en) * 1987-03-27 1988-10-05 Nec Corp Manufacture of semiconductor device
US5647740A (en) * 1993-11-08 1997-07-15 Kabushiki Kaisha Shinkawa Lead frame baking oven

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866338A (en) * 1981-10-15 1983-04-20 Toshiba Corp Semiconductor mount device
JPS5990936A (en) * 1982-10-08 1984-05-25 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド Method of bonding ultrasmall electronic chip
JPS59182532A (en) * 1983-04-01 1984-10-17 Shinkawa Ltd Heater for bonding device
JPH0254664B2 (en) * 1983-04-01 1990-11-22 Shinkawa Kk
JPS6037737A (en) * 1983-08-11 1985-02-27 Toshiba Corp Pellet mounting apparatus
JPH0231860B2 (en) * 1983-08-11 1990-07-17 Tokyo Shibaura Electric Co
JPS63239957A (en) * 1987-03-27 1988-10-05 Nec Corp Manufacture of semiconductor device
US5647740A (en) * 1993-11-08 1997-07-15 Kabushiki Kaisha Shinkawa Lead frame baking oven

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