JPS5856973B2 - Insulating film defect detection device - Google Patents
Insulating film defect detection deviceInfo
- Publication number
- JPS5856973B2 JPS5856973B2 JP13704878A JP13704878A JPS5856973B2 JP S5856973 B2 JPS5856973 B2 JP S5856973B2 JP 13704878 A JP13704878 A JP 13704878A JP 13704878 A JP13704878 A JP 13704878A JP S5856973 B2 JPS5856973 B2 JP S5856973B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- conductive film
- insulating
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Liquid Crystal (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
本発明は、液晶の動的散乱効果を応用した絶縁膜の欠陥
検出装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an insulating film defect detection device that utilizes the dynamic scattering effect of liquid crystal.
半導体装置の製造工程において、絶縁膜の欠陥検出は製
造歩留および信頼性の向上のために極めて重要である。In the manufacturing process of semiconductor devices, detection of defects in insulating films is extremely important for improving manufacturing yield and reliability.
一般に、半導体基板に形成される絶縁膜としてはＳ ｊ
Ｏ２，Ｓ ｉ ３Ｎ４ 、 Ａ １２０ｓなど各種の
ものがあるが、いずれも半導体装置の電気的特性を維持
し、かつ長時間の実使用に耐える高信頼性を保持するた
めには無欠陥でなければならない。Generally, as an insulating film formed on a semiconductor substrate, S j
There are various types such as O2, Si3N4, and A120s, but all of them must be defect-free in order to maintain the electrical characteristics of the semiconductor device and maintain high reliability that can withstand long-term actual use. No.
絶縁膜の重大な欠陥としては耐圧不良欠陥があるが、こ
の耐圧不良欠陥があると絶縁膜が形成されている半導体
基板と絶縁膜上に被着された金属配線の間に漏洩電流が
流れ電気的絶縁披が劣化する。A serious defect in an insulating film is a breakdown voltage defect. If this voltage breakdown defect exists, a leakage current will flow between the semiconductor substrate on which the insulating film is formed and the metal wiring deposited on the insulating film, causing electricity. The insulation deteriorates.
この絶縁膜の耐圧不良欠陥を検出する方法としては、従
来から電気的探斜法がよく知られているが、最近におい
て、液晶の動的散乱効果を応用する方法が注目されてき
ている。Electrical probing has been well known as a method for detecting breakdown voltage defects in insulating films, but recently a method that applies the dynamic scattering effect of liquid crystals has been attracting attention.
この液晶による欠陥検出方法は、半導体基板上に形成さ
れた絶縁膜の表面に液晶膜を形成し、この液晶膜の上に
透明導電膜を載置して構成し、半導体基板と透明導電膜
の間に直流電圧を印加して液晶膜を観察するものである
。This liquid crystal-based defect detection method consists of forming a liquid crystal film on the surface of an insulating film formed on a semiconductor substrate, placing a transparent conductive film on top of this liquid crystal film, and forming a bond between the semiconductor substrate and the transparent conductive film. The liquid crystal film is observed by applying a DC voltage between the two.
絶縁膜に耐圧不良などの欠陥が存在していると、その欠
陥附近の液晶膜中に動的散乱効果によって他の部分に対
して光学的変化（白濁など）を生ずるので、顕微鏡でこ
れを観察すれば欠陥の検出ができる。If there is a defect such as a breakdown voltage failure in the insulating film, an optical change (such as clouding) will occur in the liquid crystal film near the defect due to the dynamic scattering effect, so this should be observed using a microscope. Defects can then be detected.
液晶の動的散乱効果によって、液晶分子は比較的広い範
囲で配向が擾乱されるので、微小な欠陥でも容易に検出
でき、また欠陥は擾乱の中心に存在しているのでその位
置も明確にできるため、特に超高集積半導体装置の絶縁
膜の欠陥検出に使用して好適である。Due to the dynamic scattering effect of liquid crystal, the alignment of liquid crystal molecules is disturbed over a relatively wide range, so even minute defects can be easily detected, and since the defect is located at the center of the disturbance, its location can be clearly determined. Therefore, it is particularly suitable for use in detecting defects in insulating films of ultra-highly integrated semiconductor devices.
しかしこの方法の場合、欠陥を検出すべき絶縁膜が形成
されている半導体基板と透明導電膜との間に印加される
直流電圧は、これらの間隔を保持するために設けられた
絶縁スペーサの厚さで決まる液晶膜の厚さおよび絶縁膜
の厚さ、さらにそれぞれの比抵抗によって厚さ方向に電
圧配分される。However, in the case of this method, the DC voltage applied between the semiconductor substrate on which the insulating film whose defects are to be detected and the transparent conductive film are formed depends on the thickness of the insulating spacer provided to maintain the distance between them. The voltage is distributed in the thickness direction depending on the thickness of the liquid crystal film and the thickness of the insulating film, which are determined by the thickness, and the specific resistance of each.
したがって、絶縁膜に実際に加わる電圧は、直導電源か
ら供給される電圧ではなく、その電圧から液晶膜による
電圧降下分を差引いた値となる。Therefore, the voltage actually applied to the insulating film is not the voltage supplied from the direct conduction power source, but the value obtained by subtracting the voltage drop due to the liquid crystal film from that voltage.
しかるに、従来のこの方法に用いる装置においては、直
流電源の電圧を測定して絶縁膜に加わる電圧とみなして
検査を行なっていたため、耐圧不良欠陥を検出している
真の電圧印加条件が不明確で、絶縁膜の耐圧不良欠陥数
を正確に計数できないという欠点があった。However, in the conventional equipment used for this method, the voltage of the DC power supply was measured and inspected by treating it as the voltage applied to the insulating film, so the true voltage application conditions under which breakdown voltage defects were detected were unclear. However, there was a drawback that the number of breakdown voltage defects in the insulating film could not be accurately counted.
本発明は、このような従来の欠点を解消するためになさ
れたもので、その目的とするところは、正確かつ再現性
よく欠陥が検出でき、しかも絶縁膜の膜質評価も行なう
ことができるような絶縁膜の欠陥検出装置を提供するこ
とにある。The present invention has been made to eliminate these conventional drawbacks, and its purpose is to provide a method that allows defects to be detected accurately and with good reproducibility, and also allows for the evaluation of the film quality of an insulating film. An object of the present invention is to provide an insulating film defect detection device.
このような目的を達成するために、本発明は、絶縁膜と
接する面に導電膜を形成した絶縁スペーサを設け、この
導電膜と絶縁膜を形成した半導体基板との間に電位差計
を電気的に接続したものである。In order to achieve such an object, the present invention provides an insulating spacer with a conductive film formed on the surface in contact with the insulating film, and electrically connects a potentiometer between the conductive film and the semiconductor substrate on which the insulating film is formed. It is connected to.
以下、本発明を実施例によって詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.
図は本発明に係る絶縁膜の欠陥検出装置の一実施例の縦
断面図である。The figure is a longitudinal sectional view of an embodiment of the insulating film defect detection device according to the present invention.
図において、金属からなる試料台１上には、その主表面
に被測定用の絶轡膜２を形成した半導体基板３が絶縁膜
２を上側にして載置され、この半導体基板３の上には、
中央部に比較的大きな開孔４を有し一面にＡ ｕ ”’
＆たはＡｇなどの導電膜５を形成したポリエチレン・フ
ィルムなどからなる絶縁スペーサ６が、導電膜５を下側
にしてこの導電膜５が絶縁膜２と接するようにして載置
され、さらに絶縁スペーサ６の開孔４内には液晶膜７が
充填成形される。In the figure, a semiconductor substrate 3 with an insulating film 2 to be measured formed on its main surface is placed on a sample stage 1 made of metal, with the insulating film 2 facing upward. teeth,
It has a relatively large opening 4 in the center and has A u "' on one side.
An insulating spacer 6 made of polyethylene film or the like on which a conductive film 5 of Ag or the like is formed is placed with the conductive film 5 facing down and the conductive film 5 is in contact with the insulating film 2. A liquid crystal film 7 is filled and molded into the opening 4 of the spacer 6 .
次いで、絶縁スペーサ６の上には、一面に５ｎＯｚまた
はＩｎｚＯｓなどの透明導電膜８を形成したガラス板９
が、透明導電膜８を下側にしてこの透明導電膜８が液晶
膜７と接するようにして載置される。Next, on the insulating spacer 6 is a glass plate 9 on which a transparent conductive film 8 of 5nOz or InzOs or the like is formed.
However, it is placed so that the transparent conductive film 8 is in contact with the liquid crystal film 7 with the transparent conductive film 8 facing down.
そして、透明導電膜８には可変電圧型の直流電源１０の
正極、導電膜５には直流用の電位差計１１の正端子、試
料台１には直流電源１０の負極および電位差計１１の負
端子がそれぞれ電気的に接続される。The transparent conductive film 8 is connected to the positive terminal of a variable voltage DC power supply 10, the conductive film 5 is connected to the positive terminal of a DC potentiometer 11, and the sample stage 1 is connected to the negative terminal of the DC power supply 10 and the negative terminal of the potentiometer 11. are electrically connected to each other.
さらに、ガラス板９の上方には、絶縁スペーサ６の開孔
４内の液晶膜７を拡大して観察するための光学顕微鏡１
２が配置される。Further, above the glass plate 9, an optical microscope 1 is provided for enlarging and observing the liquid crystal film 7 within the opening 4 of the insulating spacer 6.
2 is placed.
このような構成において、直流電源１０の供給電圧を調
整して、電位差計１１を読むことにより半導体基板３と
導電膜５の間の電位差、すなわち絶縁膜２の両面間の電
位差が所定値となるように設定する。In such a configuration, by adjusting the supply voltage of the DC power supply 10 and reading the potentiometer 11, the potential difference between the semiconductor substrate 3 and the conductive film 5, that is, the potential difference between both surfaces of the insulating film 2, becomes a predetermined value. Set it as follows.
そしてこの状態で、光学顕微鏡１２により液晶膜７内に
現われる擾乱箇所を観察する。In this state, the disturbance location appearing in the liquid crystal film 7 is observed using the optical microscope 12.
もし、液晶膜７に擾乱箇所が現われれば、その中心の位
置に絶縁膜２の欠陥が存在していることになる。If a disturbance point appears in the liquid crystal film 7, it means that a defect in the insulating film 2 exists at the center position.
この場合、絶縁膜２の欠陥検出における電圧印加条件を
電位差計１１によって測定しかつ適当な値に規定するこ
とができるため、電圧印加条件が明確になり、特に印加
電圧によって欠陥数が変化しやすい耐圧不良欠陥の検出
においては、欠陥検出および欠陥数の計数を正確かつ再
現性よく行なうことが可能となり、絶縁膜２の膜質評価
も行なうことができる。In this case, since the voltage application conditions for detecting defects in the insulating film 2 can be measured by the potentiometer 11 and set to an appropriate value, the voltage application conditions are clear, and the number of defects is particularly likely to change depending on the applied voltage. In detecting voltage-defective defects, defect detection and counting of the number of defects can be performed accurately and reproducibly, and the film quality of the insulating film 2 can also be evaluated.
また、耐圧不良欠陥の印加電圧依存性を調べてより詳細
な絶縁膜２の膜質評価を行なう場合にも、従来の装置に
比して膜質に関する正確で忠実なデータを得ることがで
きる。Furthermore, when performing a more detailed evaluation of the film quality of the insulating film 2 by investigating the dependence of voltage resistance defects on applied voltage, more accurate and faithful data regarding the film quality can be obtained than with conventional apparatuses.
以上の実施例においては、絶縁スペーサは一面にのみ導
電膜を形成したが両面に形成することもできる。In the above embodiments, the conductive film was formed only on one side of the insulating spacer, but it can also be formed on both sides.
なお、この場合、電位差計に接続する導電膜は、被測定
の絶縁膜と接触する方の導電膜であることはいうまでも
ない。In this case, it goes without saying that the conductive film connected to the potentiometer is the conductive film that comes into contact with the insulating film to be measured.
また、試料台は半導体基板に接する上面のみ金属にして
、この金属に直流電源および電位差計を接続することも
できる。Alternatively, only the upper surface of the sample stage that contacts the semiconductor substrate may be made of metal, and a DC power source and a potentiometer may be connected to this metal.
このように本発明に係る絶縁膜の欠陥検出装置によると
、正確かつ再現性よく欠陥が検出でき、しかも膜質評価
も行なうことができるため、半導体基板上の絶縁膜の作
成技術を向上させ、半導体装置の製造歩留および信頼性
を高める効果がある。As described above, according to the insulating film defect detection device according to the present invention, defects can be detected accurately and reproducibly, and film quality can also be evaluated. This has the effect of increasing the manufacturing yield and reliability of the device.
図は本発明に係る絶縁膜の欠陥検出装置の一実施例の縦
断面図である。
１・・・試料台、２・・・絶縁膜、３・・・半導体基板
、４・・・開孔、５・・・導電膜、６・・・絶縁スペー
サ、７・・・液晶膜、８・・・透明導電膜、９・・・ガ
ラス板、１０・・・直流電源、１１・・・直流電位差計
、１２・・・光学顕微鏡。The figure is a longitudinal sectional view of an embodiment of the insulating film defect detection device according to the present invention. DESCRIPTION OF SYMBOLS 1... Sample stage, 2... Insulating film, 3... Semiconductor substrate, 4... Opening, 5... Conductive film, 6... Insulating spacer, 7... Liquid crystal film, 8 ...Transparent conductive film, 9...Glass plate, 10...DC power source, 11...DC potentiometer, 12...Optical microscope.
Claims (1)
し少くとも一面に導電膜を形成し、開孔が前記絶縁膜上
に配置されかつ導電膜が前記絶縁膜に接する・よ、うに
前記半導体基板に載置した絶縁スペーサと、この絶縁ス
ペーサの開孔内に充填された液晶膜と、一面に透明導電
膜を形成し、透明導電膜が前記絶縁スペーサの前記導電
膜が形成された面と反対側に接しかつ前記液晶膜に接す
るように前記絶縁スペーサに載置したガラス板と、前記
半導体基板と前記透明導電膜との間に電気的に接続した
直流電源と、前記半導体基板と前記導電膜との間に電気
的に接続した電位差計と、前記ガラス板の上方から前記
液晶膜を観嚢するための光学顕微鏡とから構成したこと
を特徴とする絶縁膜の欠陥検出装置。1. A semiconductor substrate having an insulating film formed on its main surface, a conductive film having an opening formed on at least one surface, the opening being disposed on the insulating film, and the conductive film being in contact with the insulating film. an insulating spacer placed on the semiconductor substrate, a liquid crystal film filled in the opening of the insulating spacer, and a transparent conductive film formed on one surface, and the transparent conductive film is formed with the conductive film of the insulating spacer. a glass plate placed on the insulating spacer so as to be in contact with the surface opposite to the liquid crystal film; a DC power supply electrically connected between the semiconductor substrate and the transparent conductive film; and the semiconductor substrate. An apparatus for detecting defects in an insulating film, comprising: a potentiometer electrically connected between the conductive film and the conductive film; and an optical microscope for observing the liquid crystal film from above the glass plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13704878A JPS5856973B2 (en) | 1978-11-06 | 1978-11-06 | Insulating film defect detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13704878A JPS5856973B2 (en) | 1978-11-06 | 1978-11-06 | Insulating film defect detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563835A JPS5563835A (en) | 1980-05-14 |
| JPS5856973B2 true JPS5856973B2 (en) | 1983-12-17 |
Family
ID=15189645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13704878A Expired JPS5856973B2 (en) | 1978-11-06 | 1978-11-06 | Insulating film defect detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856973B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076495U (en) * | 1983-10-29 | 1985-05-28 | カルソニックカンセイ株式会社 | Display drive circuit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4699928B2 (en) * | 2006-03-29 | 2011-06-15 | 日本碍子株式会社 | Plasma generation electrode inspection device |
| JP5004219B2 (en) * | 2007-03-27 | 2012-08-22 | 株式会社安川電機 | Oil film dielectric breakdown evaluation system |
-
1978
- 1978-11-06 JP JP13704878A patent/JPS5856973B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076495U (en) * | 1983-10-29 | 1985-05-28 | カルソニックカンセイ株式会社 | Display drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5563835A (en) | 1980-05-14 |
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