JPS5847597Y2 - memory device - Google Patents

memory device

Info

Publication number
JPS5847597Y2
JPS5847597Y2 JP1977105911U JP10591177U JPS5847597Y2 JP S5847597 Y2 JPS5847597 Y2 JP S5847597Y2 JP 1977105911 U JP1977105911 U JP 1977105911U JP 10591177 U JP10591177 U JP 10591177U JP S5847597 Y2 JPS5847597 Y2 JP S5847597Y2
Authority
JP
Japan
Prior art keywords
memory
voltage
battery
power
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1977105911U
Other languages
Japanese (ja)
Other versions
JPS5433032U (en
Inventor
政憲 岡本
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP1977105911U priority Critical patent/JPS5847597Y2/en
Publication of JPS5433032U publication Critical patent/JPS5433032U/ja
Application granted granted Critical
Publication of JPS5847597Y2 publication Critical patent/JPS5847597Y2/en
Expired legal-status Critical Current

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Description

【考案の詳細な説明】 本案は停電時にメモリーを電池出力によって作動させ、
停電回復時に電池の正常動作をチェックする事によって
メモリーの内容の良否を判定するメモリー装置に関する
[Detailed explanation of the invention] This invention operates the memory using battery output during a power outage.
The present invention relates to a memory device that determines whether the contents of the memory are good or not by checking the normal operation of the battery when the power is restored.

一般に揮発性メモリーを使用する場合に、常時メモリー
に電力を供給しなければならないので、通常のメモリー
電源としては二次電池が併用されているが、それでも長
時間の停電の際には電池電圧の低下が生じ、メモリー内
容が破壊される事となる。
Generally, when using volatile memory, it is necessary to constantly supply power to the memory, so a secondary battery is also used as a normal memory power source, but even then, the battery voltage will drop during a long power outage. This will cause the memory contents to be destroyed.

本案は上記の点に鑑みて停電回復時に電池電圧をチェッ
クし、メモリー内容の良否を判定するメモリー装置を提
供するものである。
In view of the above points, the present invention provides a memory device that checks the battery voltage upon recovery from a power outage and determines whether the memory contents are good or bad.

第1図は本案の実施例の回路図で、第2図は第1図の動
作波形図である。
FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIG. 2 is an operation waveform diagram of FIG. 1.

図に於いて1はC−MOSで構成された揮発性のメモリ
ーで、通常は商用電源からの直流電圧vaが抵抗R1ダ
イオードDI 、D2を介して供給され、停電時には電
池2の電圧vbが抵抗R2ダイオードD1を介して供給
されるので、記憶内容が常時保護される。
In the figure, 1 is a volatile memory composed of C-MOS, and normally DC voltage va from the commercial power supply is supplied through resistors R1 and diodes DI and D2, and in the event of a power outage, the voltage vb of battery 2 is supplied to the resistor. Since it is supplied via the R2 diode D1, the stored contents are always protected.

C−MOSのメモリーは消費電力が非常に少ないので停
電時でも充分メモリー1は作動するが、長時間停電した
場合はメモリー1内容が破壊される惧れがある。
Since C-MOS memory consumes very little power, the memory 1 can operate satisfactorily even during a power outage, but there is a risk that the contents of the memory 1 will be destroyed if the power goes out for a long time.

3は電池2の電圧検出する回路で、ツェナーダイオード
ZDとトランジスタTrと抵抗R3,R4,R5とから
構成され、電池2の電圧vbが一定電圧以下になるとツ
ェナーダイオードZDが不導通になり、トランジスタT
rがオフになってトランジスタT。
3 is a circuit for detecting the voltage of the battery 2, which is composed of a Zener diode ZD, a transistor Tr, and resistors R3, R4, and R5. When the voltage vb of the battery 2 falls below a certain voltage, the Zener diode ZD becomes non-conductive, and the transistor T
r is turned off and transistor T.

の出力電圧V。The output voltage V.

が電池2の電圧vbと同一になる。4は単安定マルチ回
路で、電源電圧Vaが停電から回復すると単一信号を発
生し、ツアーゲートNRにてトランジスタT の出力電
圧V。
becomes the same as the voltage vb of battery 2. 4 is a monostable multi-circuit that generates a single signal when the power supply voltage Va recovers from a power outage, and the output voltage V of the transistor T at the tour gate NR.

との条件が取られる。The condition is taken.

第2図を用いて停電中に電池2の電圧vbが規定電圧よ
り低下した場合について説明する。
A case where the voltage vb of the battery 2 drops below the specified voltage during a power outage will be explained using FIG. 2.

電源電圧Vaが回復すると抵抗R1,R2を介して電池
2に充電々流が流れるが、電池2の電圧vbはすぐには
正常な電圧に回復しない。
When the power supply voltage Va recovers, a charging current flows to the battery 2 via the resistors R1 and R2, but the voltage vb of the battery 2 does not immediately recover to a normal voltage.

電源電圧Vaが回復すると単安定マルチ回路4から出力
Vdが発生し、電池2の電圧vbが規定電圧以下のため
検出回路3のトランジスタTrがオフし、出力電圧V。
When the power supply voltage Va recovers, an output Vd is generated from the monostable multicircuit 4, and since the voltage vb of the battery 2 is below the specified voltage, the transistor Tr of the detection circuit 3 is turned off, and the output voltage V.

は電池2の電圧vbと同一になる。このためノアーゲー
)NRに於いては二人力が負であるため正の出力が発生
する。
becomes the same as the voltage vb of battery 2. For this reason, in Noah Game) NR, since the two-person force is negative, a positive output is generated.

つまり、電源電圧Vaの回復時に電池2が規定電圧以下
である事が検出される。
That is, when the power supply voltage Va is restored, it is detected that the voltage of the battery 2 is below the specified voltage.

その後電池2の電圧が規定電圧になるとトランジスタT
がオンし、出力電圧V。
After that, when the voltage of battery 2 reaches the specified voltage, transistor T
turns on and the output voltage V.

が正になる。becomes positive.

さらに上記ツアーゲートNRの正の出力によって特殊記
号の印字又はブザーによる警報ざらにフリップフロップ
等を用いた記憶を行なって表示する事によってメモリー
1内容が破壊されている事を使用者に知らせる。
Further, the user is informed that the contents of the memory 1 have been destroyed by printing a special symbol in response to the positive output of the tour gate NR or by memorizing and displaying the memory using a flip-flop or the like in response to a warning from a buzzer.

また上記のツアーゲートNRの出力はメモリー1の内容
が不良である事を示すものであるので、メモリー1を使
用する制御回路にイニシャルクリヤー信号として与えて
メモリー1の不良時に自動的にクリアー動作を行なわせ
る事もできる。
Furthermore, since the output of the tour gate NR mentioned above indicates that the contents of memory 1 are defective, it is given as an initial clear signal to the control circuit that uses memory 1, so that it automatically performs a clear operation when memory 1 is defective. You can also make them do it.

以上の如く、本案は通常は商用電源からの電力によって
作動する揮発性メモリーを停電時に電池で保護するメモ
リー装置に於いて、電池の正常動作を検出する回路と、
該回路の出力を停電回復時にチェックする手段とを設け
、停電回復時にメモリー内容の良否を判定するもので、
停電が伺回発生しても電池電圧が正常であればメモリー
内容を良とし、停電時に電池電圧が規定電圧以下に低下
した場合は停電回復時にメモリーの不良を確実に通報す
る事ができ、不揮発性メモリーの不良を容易に知る事が
できる。
As described above, the present invention provides a circuit for detecting normal operation of a battery in a memory device in which a volatile memory that normally operates using power from a commercial power source is protected by a battery during a power outage.
means for checking the output of the circuit when the power is restored, and determining whether the memory contents are good or bad when the power is restored;
Even if a power outage occurs repeatedly, if the battery voltage is normal, the memory contents are assumed to be good. If the battery voltage drops below the specified voltage during a power outage, it is possible to reliably report a memory defect when the power is restored, and it is non-volatile. You can easily find out if your sexual memory is defective.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本案の実施例を示す回路図、第2図は第1図の
動作を説明する波形図である。 図に於いて1は不揮発性メモリー、2は電池、3は電圧
検出回路、4は単安定マルチ回路である。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a waveform diagram explaining the operation of FIG. 1. In the figure, 1 is a non-volatile memory, 2 is a battery, 3 is a voltage detection circuit, and 4 is a monostable multi-circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 通常は商用電源からの電力によって作動する揮発性メモ
リーを停電時に電池で保護するメモリー装置に於いて、
電池の正常動作を検出する回路と、該回路の出力を停電
回復時にチェックする手段とを設け、停電回復時にメモ
リー内容の良否を判定する事を特徴とするメモリー装置
In memory devices, volatile memory, which is normally powered by commercial power, is protected by batteries during power outages.
A memory device comprising a circuit for detecting normal operation of a battery and a means for checking the output of the circuit upon recovery from a power outage, and determining whether the memory contents are good or bad at the time of recovery from a power outage.
JP1977105911U 1977-08-05 1977-08-05 memory device Expired JPS5847597Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1977105911U JPS5847597Y2 (en) 1977-08-05 1977-08-05 memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1977105911U JPS5847597Y2 (en) 1977-08-05 1977-08-05 memory device

Publications (2)

Publication Number Publication Date
JPS5433032U JPS5433032U (en) 1979-03-03
JPS5847597Y2 true JPS5847597Y2 (en) 1983-10-29

Family

ID=29048606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1977105911U Expired JPS5847597Y2 (en) 1977-08-05 1977-08-05 memory device

Country Status (1)

Country Link
JP (1) JPS5847597Y2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185602A (en) * 1975-01-25 1976-07-27 Torio Kk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185602A (en) * 1975-01-25 1976-07-27 Torio Kk

Also Published As

Publication number Publication date
JPS5433032U (en) 1979-03-03

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