JPS5845815B2 - wire bonding equipment - Google Patents
wire bonding equipmentInfo
- Publication number
- JPS5845815B2 JPS5845815B2 JP50049687A JP4968775A JPS5845815B2 JP S5845815 B2 JPS5845815 B2 JP S5845815B2 JP 50049687 A JP50049687 A JP 50049687A JP 4968775 A JP4968775 A JP 4968775A JP S5845815 B2 JPS5845815 B2 JP S5845815B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- wire bonding
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置の製造において、半導体素子と外部
リードとをワイヤで接続するワイヤボンディング技術に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding technique for connecting a semiconductor element and an external lead with a wire in the manufacture of a semiconductor device.
周知のように、半導体装置、半導体集積回路装置等の製
造工程において、半導体素子の電極と外部リードとをワ
イヤで接続する作業がある。As is well known, in the manufacturing process of semiconductor devices, semiconductor integrated circuit devices, etc., there is a task of connecting electrodes of semiconductor elements and external leads with wires.
この作業においては、ワイヤを保持するキャピラリある
いはウェッジという接続工具でワイヤを電極等に押圧し
ながら機械的に振動させてワイヤボンディングを行なう
方法が知られている。In this work, a method is known in which wire bonding is performed by mechanically vibrating the wire while pressing it against an electrode or the like using a connecting tool called a capillary or wedge that holds the wire.
この方法において、振動は超音波発振器による振動また
は偏心軸の回転による振動を利用しているが、いずれも
その振動は直線的なものである。In this method, vibrations are generated by an ultrasonic oscillator or by rotation of an eccentric shaft, but in both cases, the vibrations are linear.
この結果、ワイヤ（金線）を球状塊化してボンディング
した場合、第１図で示すように、ワイヤ１の接着部２は
振動方向３を長軸とする偏平な楕円となる。As a result, when the wire (gold wire) is formed into a spherical mass and bonded, the bonded portion 2 of the wire 1 becomes a flat ellipse with the vibration direction 3 as the major axis, as shown in FIG.
そして、その接着部２の強度（ボンディング強度）は長
軸方向に対しては強いが、短軸方向に対しては弱くなる
欠点がある。The strength of the adhesive portion 2 (bonding strength) is strong in the major axis direction, but has a drawback that it is weak in the minor axis direction.
このため、短軸方向の力がワイヤに加わると極めて簡単
にワイヤが外れてしまう。Therefore, if a force in the short axis direction is applied to the wire, the wire will come off very easily.
また、接着部２は楕円状に形成されることから、半導体
素子４のポンディングパッド（電極）５から接着部２が
食み出さないようにするためにはポンディングパッド５
をあらかじめ太きくしなければならず、半導体素子４の
小型化が図れない欠点がある。Furthermore, since the bonding portion 2 is formed in an elliptical shape, in order to prevent the bonding portion 2 from protruding from the bonding pad (electrode) 5 of the semiconductor element 4, the bonding pad 5 must be
This has the disadvantage that the semiconductor element 4 cannot be made smaller because it must be made thicker in advance.
また、従来の方法（装置）では、ワイヤを押圧するキャ
ピラリ、ウェッジという接続工具は一定の方向に振動す
るため、ワイヤの延びる方向、すなわち軸方向に沿って
振動させないとワイヤが動いて正確なワイヤボンディン
グができなくなる。In addition, in the conventional method (device), the connecting tools such as capillaries and wedges that press the wire vibrate in a certain direction, so unless they are vibrated along the direction in which the wire extends, that is, the axial direction, the wire will move and the wire will not be correctly wired. Bonding becomes impossible.
そこで、従来の此種装置では半導体素子等を載置するテ
ーブルを回転させながら行なっているが、ボンディング
毎に方向調整作業を行なうため作業性が悪い。Therefore, in conventional devices of this kind, bonding is performed while rotating the table on which the semiconductor elements are placed, but the work efficiency is poor because the direction adjustment work is performed every time bonding is performed.
また、テーブル回転機構を必要とするため、装置が複雑
かつ大型化するとともに、その価格も増大する欠点があ
る。Furthermore, since a table rotation mechanism is required, the device becomes complicated and large, and its cost also increases.
したがって、本発明の目的とするところは、ボンディン
グ強度の向上を図ることにある。Therefore, an object of the present invention is to improve bonding strength.
また、本発明の他の目的は半導体素子の小型化を図るこ
とにある。Another object of the present invention is to reduce the size of semiconductor devices.
また、本発明の目的はワイヤボンディング装置の機構の
簡素化を図ることにより、装置の操作性の向上、装置コ
ストの低減を図ることにある。Another object of the present invention is to improve the operability of the wire bonding device and reduce the cost of the device by simplifying the mechanism of the wire bonding device.
このような目的を達成するために本発明は、ワイヤを保
持する筒状のキャピラリを回転振動させながら接着面に
ワイヤを押し付けてボンディングするものであって、以
下実施例により本発明の詳細な説明する。In order to achieve such an object, the present invention performs bonding by pressing a wire against an adhesive surface while rotating and vibrating a cylindrical capillary that holds a wire. do.
第２図は本発明のワイヤボンディング方法において用い
られるワイヤボンディング装置の一実施例を示す。FIG. 2 shows an embodiment of a wire bonding apparatus used in the wire bonding method of the present invention.
同図に示すように、垂直にベアリング１０を介して支持
される作動棒１１の下端には、筒状でかつ下方に向かっ
て先細となるキャピラリ１２がねじ１３によって取り付
けられている。As shown in the figure, a cylindrical capillary 12 tapering downward is attached to the lower end of an actuating rod 11 that is vertically supported via a bearing 10 with a screw 13.
また、前記キャピラリ１２を取り付けた作動棒１１の僅
か上方にはワイヤ供給孔１４が穿たれている。Further, a wire supply hole 14 is bored slightly above the actuating rod 11 to which the capillary 12 is attached.
このワイヤ供給孔１４は前記キャピラリ１２の筒内部と
連通し、ワイヤ１５は同図で示すように、このワイヤ供
給孔１４からキャピラリ１２内部に供給されるようにな
っている。The wire supply hole 14 communicates with the inside of the capillary 12, and the wire 15 is supplied into the capillary 12 through the wire supply hole 14, as shown in the figure.
一方、前記作動棒１１には放射状に４片の鉄心１６が設
けられ、これらの鉄心１６には導線１７が巻き付けられ
てコイル１８が形成されている。On the other hand, the operating rod 11 is provided with four pieces of iron core 16 radially, and a coil 18 is formed by winding a conducting wire 17 around these iron cores 16.
また、コイル１８から延びる両端の導線１７は高周波等
交流電源１９に接続されている。Further, conductive wires 17 at both ends extending from the coil 18 are connected to an AC power source 19 such as a high frequency.
さらに、前記鉄心１６を取り囲むように磁石２０が不接
触状態で配設されている。Further, a magnet 20 is arranged in a non-contact manner so as to surround the iron core 16.
したがって、コイル１８に高周波電流を流すことにより
交番磁界が発生し、作動棒１１は矢印２１で示すように
ほぼ交番磁界に沿った方向に回転振動する。Therefore, by passing a high frequency current through the coil 18, an alternating magnetic field is generated, and the actuating rod 11 rotates and oscillates in a direction substantially along the alternating magnetic field as shown by an arrow 21.
すなわち、作動棒１１は矢印２１で示すように作業棒１
１の長軸を中心とした回転方向）こ振動を伴なった往復
動を行なう。That is, the actuating rod 11 is connected to the working rod 1 as shown by the arrow 21.
1) This reciprocating motion is accompanied by vibration.
そのため、作業棒１１にねじ１８によって取り付けられ
ているキャピラリ１２も作業棒１１と同じく、キャピラ
リの軸を中心）こした回転方向に上記振動を伴なった往
復動すなわち振動を伴なった揺動を行なう。Therefore, like the work rod 11, the capillary 12 attached to the work rod 11 with the screw 18 also exhibits reciprocating motion accompanied by the above-mentioned vibrations, that is, rocking motion accompanied by vibrations in the rotational direction around the axis of the capillary. Let's do it.
なお、前記作動棒１１全体が図示しない駆動部によって
制御され、平面Ｘ、Ｙ方向および上下動するようになっ
ている。Incidentally, the entire actuating rod 11 is controlled by a drive section (not shown) to move in the plane X and Y directions and up and down.
このような機構のワイヤボンディング装置を用いて、半
導体素子２２上のポンディングパッド２３と外部リード
２４とをワイヤ１５で接続する。Using a wire bonding device having such a mechanism, the bonding pads 23 on the semiconductor element 22 and the external leads 24 are connected with the wires 15.
すなわち、キャピラリ１２の下端から突出するワイヤ１
５の先端を水素炎等により溶融して球状塊２５を形成し
た後、作動棒１１を降下させ、球状塊２５をポンディン
グパッド２３に押し付け、たとえば６０Ｋｔｌｚの電流
を３０ｍ８コイルに流し、作動棒１１を矢印２１に示す
ごとく振動を伴なった揺動させながらワイヤの接続を行
なう。That is, the wire 1 protruding from the lower end of the capillary 12
5 is melted with a hydrogen flame or the like to form a spherical lump 25, the actuating rod 11 is lowered, the spherical lump 25 is pressed against the pounding pad 23, and a current of, for example, 60 Ktlz is passed through the 30 m8 coil, and the actuating rod 11 is The wires are connected while swinging with vibration as shown by arrow 21.
つぎに、作動棒１１を外部リード２４上に運び同様な手
順でワイヤを接続した後、接着部近傍からワイヤ１５を
分断させる。Next, the actuating rod 11 is moved onto the external lead 24 and the wires are connected in the same manner, after which the wire 15 is separated from the vicinity of the bonded portion.
その後、作動棒１１を新たなポンディングパッド上に順
次移動させてワイヤボンディングを行なう。Thereafter, the actuating rod 11 is sequentially moved onto new bonding pads to perform wire bonding.
この際、ボンディング時方向性は必要としないことから
、従来のように、半導体素子を取り付けたリードフレー
ムを載置するテーブルを回動調整する必要もなくなる。At this time, since directionality is not required during bonding, there is no need to adjust the rotation of the table on which the lead frame to which the semiconductor element is attached is placed, as in the conventional case.
また、この実施例によれば、球状塊を接続する場合、キ
ャピラリ１２は矢印２１に示すごとく振動を伴なった揺
動するため、第１図鎖線で示すように、接着部２６はほ
ぼ円形となる。Further, according to this embodiment, when connecting spherical masses, the capillary 12 swings with vibration as shown by the arrow 21, so that the adhesive part 26 forms a substantially circular shape as shown by the chain line in FIG. Become.
このため、ボンティングパッド２７は第１図鎖線で示す
ように従来のポンディングパッド５よりも小さくても不
都合は生じなくなる。Therefore, even if the bonding pad 27 is smaller than the conventional bonding pad 5, as shown by the chain line in FIG. 1, no problem will arise.
また、接着部２６の各円周部分での接着状態は均一とな
ることから、ボンティング強度に方向性はなくなり、そ
のボンディング強度は従来に較べて犬となる。Further, since the bonding state at each circumferential portion of the bonding portion 26 is uniform, there is no directionality in the bonding strength, and the bonding strength is lower than that of the conventional bonding strength.
このため、従来のようにワイヤが簡単に剥離するような
こともなくなる。Therefore, the wire does not easily peel off as in the conventional case.
なお、本発明は前記実施例に限定されるものではなく、
実際にワイヤボンディングを行なう装置のキャピラリの
回転振動は、作動棒側に磁石を、作動棒を取り囲むよう
にコイルをそれぞれ配置する構造であってもよい。Note that the present invention is not limited to the above embodiments,
The rotational vibration of a capillary in an apparatus that actually performs wire bonding may be realized by a structure in which a magnet is disposed on the operating rod side and a coil is disposed so as to surround the operating rod.
以上のように、本発明のワイヤボンティング方法Ｑこよ
れば、ワイヤの接着半径を小さくできるので、ポンディ
ングパッドを小型にすることができる。As described above, according to the wire bonding method Q of the present invention, the bonding radius of the wire can be reduced, so that the bonding pad can be made smaller.
したがって、半導体素子の小型化を図ることができ、か
つ半導体素子の価格の低減化も図ることができる。Therefore, the size of the semiconductor element can be reduced, and the cost of the semiconductor element can also be reduced.
また、球状塊部のワイヤの接続にあっては、ワイヤのホ
ンディング強度は平面Ｘ、Ｙ方向のいかなる方向であっ
てもほぼ同じであり、従来のように、一方向だけが弱い
等のことはない。In addition, when connecting wires in the spherical mass, the wire honding strength is almost the same regardless of the direction of the plane X or Y, and unlike conventional methods, it is weak in only one direction. There isn't.
したがって、ワイヤが接着部から簡単に外れることはな
くなる。Therefore, the wire will not easily come off from the bonded portion.
また、この方法によれば、半導体素子等を載置するテー
ブルをワイヤの−張り毎に回動調整する必要もないので
作業性が向上する。Furthermore, according to this method, there is no need to adjust the rotation of the table on which the semiconductor elements and the like are placed each time the wire is stretched, thereby improving work efficiency.
また、装置自体においても、テーブルの回転調整機構を
備え付ける必要性もないので、機構が簡素化し小型とな
り、かつ装置の価格も軽減されるなど多くの効果を奏す
る。Further, since there is no need to provide a rotation adjustment mechanism for the table in the device itself, there are many advantages such as the mechanism is simplified and made smaller, and the cost of the device is also reduced.
第１図は半導体素子にボンディングしたワイヤの接着状
態を示す一部平面図、第２図は本発明のワイヤボンディ
ング方法に用いるワイヤボンディング装置の一部斜視図
である。
１・・・・・・ワイヤ、２・・・・・・接着部、３・・
・・・・振動方向、４・・・・・・半導体素子、５・・
・・・・ポンディングパッド、１０・・・・・・ベアリ
ング、１１・・・・・・作動棒、１２・・・・・・キャ
ピラリ、１３・・・・・・ねじ、１４・・・・・・ワイ
ヤ供給孔、１５・・・・・・ワイヤ、１６・・・・・・
鉄心、１７・・・・・・導線、１８・・・・・・コイル
、１９・・・・・・高周波等交流電源、２０・・・・・
・磁石、２１・・・・・・矢印、２２・・・・・・半導
体素子、２３・・・・・・ポンディングパッド、２４・
・・・・・外部ノード、２５・・・・・・球状塊、２６
・・・・・・接着部、２７・・・・・・ポンディングパ
ッド。FIG. 1 is a partial plan view showing the adhesion state of wires bonded to a semiconductor element, and FIG. 2 is a partial perspective view of a wire bonding apparatus used in the wire bonding method of the present invention. 1... Wire, 2... Adhesive part, 3...
... Vibration direction, 4... Semiconductor element, 5...
...Ponding pad, 10...Bearing, 11...Operating rod, 12...Capillary, 13...Screw, 14... ...Wire supply hole, 15...Wire, 16...
Iron core, 17... Conductor wire, 18... Coil, 19... AC power source such as high frequency, 20...
・Magnet, 21...arrow, 22...semiconductor element, 23...ponding pad, 24...
...External node, 25 ... Spherical mass, 26
...Adhesive part, 27...Ponding pad.
Claims (1)
イヤをボンディングする接続工具と、前記接続工具の軸
を中心にした回転方向に接続工具を揺動させる揺動機構
とを有することを特徴とするワイヤボンディング装置。1. A wire characterized by having a connecting tool that holds a wire and bonds the wire to a wire-bonded body, and a swinging mechanism that swings the connecting tool in a rotational direction about an axis of the connecting tool. bonding equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50049687A JPS5845815B2 (en) | 1975-04-25 | 1975-04-25 | wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50049687A JPS5845815B2 (en) | 1975-04-25 | 1975-04-25 | wire bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51126063A JPS51126063A (en) | 1976-11-02 |
| JPS5845815B2 true JPS5845815B2 (en) | 1983-10-12 |
Family
ID=12838083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50049687A Expired JPS5845815B2 (en) | 1975-04-25 | 1975-04-25 | wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5845815B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110403A (en) * | 1984-06-25 | 1986-01-17 | 白柳 伊佐雄 | Hollow assembly of wood |
| JPS6231617U (en) * | 1985-08-09 | 1987-02-25 | ||
| KR20220074289A (en) * | 2020-11-27 | 2022-06-03 | 조선대학교산학협력단 | Blockchain-based prepayment service support power trading system |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161334A (en) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | Wire bonding device |
| JP2812104B2 (en) * | 1992-10-26 | 1998-10-22 | 松下電器産業株式会社 | Ultrasonic wire bonding equipment |
-
1975
- 1975-04-25 JP JP50049687A patent/JPS5845815B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110403A (en) * | 1984-06-25 | 1986-01-17 | 白柳 伊佐雄 | Hollow assembly of wood |
| JPS6231617U (en) * | 1985-08-09 | 1987-02-25 | ||
| KR20220074289A (en) * | 2020-11-27 | 2022-06-03 | 조선대학교산학협력단 | Blockchain-based prepayment service support power trading system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51126063A (en) | 1976-11-02 |
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