JPS5844855U - 整流素子 - Google Patents

整流素子

Info

Publication number
JPS5844855U
JPS5844855U JP1981141282U JP14128281U JPS5844855U JP S5844855 U JPS5844855 U JP S5844855U JP 1981141282 U JP1981141282 U JP 1981141282U JP 14128281 U JP14128281 U JP 14128281U JP S5844855 U JPS5844855 U JP S5844855U
Authority
JP
Japan
Prior art keywords
capacitor
rectifying element
connection terminal
semiconductor chip
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1981141282U
Other languages
English (en)
Other versions
JPH0333078Y2 (ja
Inventor
泰弘 吉田
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP1981141282U priority Critical patent/JPS5844855U/ja
Priority to US06/418,176 priority patent/US4489374A/en
Priority to DE8282108711T priority patent/DE3271391D1/de
Priority to EP82108711A priority patent/EP0075320B1/en
Publication of JPS5844855U publication Critical patent/JPS5844855U/ja
Application granted granted Critical
Publication of JPH0333078Y2 publication Critical patent/JPH0333078Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Rectifiers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来の整流素子を用いた整流装置の回路図、第
２図及び第３図はこの考案の一実施例による整流素子の
正面図及び側面図、第４図は第一２図のＩＶ−ＩＶ線に
おける拡大断面図、第５図は第３図の■−■線における
拡大断面図、第６図及び第７図はこの考案の他の実施例
による整流素子の正面図及び側面図、第８図は第６図の
■−■線における拡大断面図、第９図は第７図のＩＸ−
ＩＸ線における拡大断面図である。 １０・・・・・・整流素子、１１・・・・・・外部接続
端子、１１ａ・・・・・・一端部の折曲げ片、ｌｌｂ・
・・・・・一端部の先端片、１２・・・・・・半導体チ
ップ、１３・・・・・・ヒートシンク、１４・・・・・
・コンデンサ、１５・・・・・・はんだ、１６・・・・
・・保護封止体、２０・・・・・・整流素子、２１・・
・・・・外部接続端子、２１ａ・・・・・・一端部、２
２・・・・・・半導体チップ、２３・・・・・・ヒート
シンク、２４・・・・・・コンデンサ、２６・・・・・
・保護封止体。なお、図中同一符号は同−又は相当部分
を示す。 第１図 第４図

Claims (3)

    【実用新案登録請求の範囲】
  1. （１）　　一端部が内方にあり他端部が外方に出された
    外部接続端子、この接続端子の一端部上にろう付は接合
    された整流用半導体チップ、この半導体チップ上にろう
    付は接合されたヒートシンク、上記接続端子の一端部と
    上記ヒートシンクと９間にろう付は接合されており、雑
    音を除去するためのコンデンサ、及び上記接続端子の一
    端部と上記半導体チップと上記コンデンサとを囲い絶縁
    封止した保護封止体を備えた整流素子。
  2. （２）コンデンサを長方形状にしたことを特徴とする実
    用新案登録請求の範囲第第１項記載の整流素子。
  3. （３）コンデンサを円筒形状にしたことを特徴とする実
    用新案登録請求の範囲第１項記載の整流素子。
JP1981141282U 1981-09-21 1981-09-21 整流素子 Granted JPS5844855U (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1981141282U JPS5844855U (ja) 1981-09-21 1981-09-21 整流素子
US06/418,176 US4489374A (en) 1981-09-21 1982-09-14 Rectifying apparatus for automotive A.C. generator
DE8282108711T DE3271391D1 (en) 1981-09-21 1982-09-21 Rectifying apparatus for automotive a.c. generator
EP82108711A EP0075320B1 (en) 1981-09-21 1982-09-21 Rectifying apparatus for automotive a.c. generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981141282U JPS5844855U (ja) 1981-09-21 1981-09-21 整流素子

Publications (2)

Publication Number Publication Date
JPS5844855U true JPS5844855U (ja) 1983-03-25
JPH0333078Y2 JPH0333078Y2 (ja) 1991-07-12

Family

ID=29934392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981141282U Granted JPS5844855U (ja) 1981-09-21 1981-09-21 整流素子

Country Status (1)

Country Link
JP (1) JPS5844855U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015231306A (ja) * 2014-06-06 2015-12-21 トヨタ自動車株式会社 非接触受電装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812089U (ja) * 1971-06-23 1973-02-10
JPS5550651A (en) * 1978-09-11 1980-04-12 Varo Semiconductor Diode*condenser assembly and same configuration and fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812089U (ja) * 1971-06-23 1973-02-10
JPS5550651A (en) * 1978-09-11 1980-04-12 Varo Semiconductor Diode*condenser assembly and same configuration and fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015231306A (ja) * 2014-06-06 2015-12-21 トヨタ自動車株式会社 非接触受電装置

Also Published As

Publication number Publication date
JPH0333078Y2 (ja) 1991-07-12

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