JPS5840552A - Metallic mask substrate - Google Patents
Metallic mask substrateInfo
- Publication number
- JPS5840552A JPS5840552A JP56138927A JP13892781A JPS5840552A JP S5840552 A JPS5840552 A JP S5840552A JP 56138927 A JP56138927 A JP 56138927A JP 13892781 A JP13892781 A JP 13892781A JP S5840552 A JPS5840552 A JP S5840552A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask substrate
- metal
- thin film
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置ｆ、製造する工程においてウェーハ
に施す７オトマスキングの際に使用さｎるフォトマスク
基板に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask substrate used in 7-oto-masking applied to a wafer in the manufacturing process of a semiconductor device.
フォトマスクの概略を説明すると、メタルプレート基板
上に蒸着あるいはスパッタリング法により金属薄膜を塗
布し、該金属薄膜に所望のパターンを形成させたもので
おる。ここで使用さｎるメタルマスク基板は現在５１０
（１２７ｍｍ口、板厚α０９１）が主［を占めているが
近年のＩｃの微細、為密度化及びメタルマスクの大型化
に伴って６１ｃ′（１５２ｍｍ’）のメタルマスクの使
用が計画、実行さ扛ている。To explain the outline of a photomask, a metal thin film is applied onto a metal plate substrate by vapor deposition or sputtering, and a desired pattern is formed on the metal thin film. The metal mask substrate used here is currently 510
(127mm opening, plate thickness α091) is the main one, but in recent years the use of 61c'(152mm') metal masks has been planned and implemented due to the increasing fineness and density of ICs and the increasing size of metal masks. It's being carried away.
従来メタルマスク及び基板のハンドリング方法は自動的
に行うものも少数有ったが、その殆んどは人間の手（指
）が介在するものであった。今まで最大 １ｏ のメタ
ルマスク基板においてその対辺を片手で押えメタルマス
ク基板の内部は汚さない様にハンドリングを行うことが
可能でめった。Although there are a few conventional methods for handling metal masks and substrates that are performed automatically, most of them involve human hands (fingers). Until now, it has rarely been possible to handle a metal mask substrate of up to 1o by holding down the opposite side with one hand without contaminating the inside of the metal mask substrate.
しかしながら６′。のメタルマスク基板は１辺の長さが
１５２ｍｍと長くその対辺を片手で押え保持することが
不可能となった。又無塩に片手で保持しようとすると、
メタルマスク基板の金属膜に指紋等の汚ｒＬを付層させ
ると菖う不都合が生じていた。However, 6′. The length of one side of the metal mask substrate was 152 mm, making it impossible to hold and hold the opposite side with one hand. Also, if you try to hold it with one hand without salt,
When dirt rL such as fingerprints is deposited on the metal film of the metal mask substrate, an inconvenience arises in that it stains.
本発明はこの不都合１解消すべく行なわｎたものでるり
、メタルマスク基板の一部分又は複数部分に金属＃楓を
着しない・・ンドリンク用保持部を設けたことｆ：％徴
とするメタルマスク基板を提供するものである。The present invention has been made in order to solve this problem 1.In order to solve this problem, the metal mask does not attach metal maple to one or more parts of the metal mask substrate. It provides a substrate.
本発明を実施例を用いて以下に説明する。すなわち第１
図において、ンーダライム系ガラス、低膨張５石英基板
等のメタルプレート基板ｌ上に金属薄膜２を有する領域
と金属薄ｊ１ｇを有しない領域の保持部３から成るメタ
ルマスク基板でおる。The present invention will be explained below using examples. That is, the first
In the figure, it is a metal mask substrate consisting of a metal plate substrate l such as a lime glass or low expansion 5 quartz substrate, and a holding portion 3 in a region having a metal thin film 2 and a region not having a metal thin film j1g.
本実施例を実現するためには、金Ｊ４薄膜２を塗Ｉｔｉ
する除第２図に示すようなホルダー４のごとく該ホルダ
ー４のガイド６の内側にメタルプレート基板ｌを固定し
、蒸着あるいはスパッタリング用旧具として使用するこ
とにより金属薄膜２はホルダー４の憇５の領域にのみし
か塗布さｎず、メタルプレート基板ｌの４隅には、金属
薄膜２ｔ−有しない領域の保持部３が形成さｎる０本実
施例において該保持部３の三角形の面積は４〜８ ｃｍ
”が最適であった。In order to realize this example, it is necessary to apply gold J4 thin film 2.
By fixing the metal plate substrate l inside the guide 6 of the holder 4 as shown in FIG. In this embodiment, the area of the triangle of the holding part 3 is 4-8cm
” was the most suitable.
このようにして製造さｎたメタルマスク基板においては
保持部３の裏表を使用し指で挾み保持することが可能と
なり金属薄膜２ｔ−汚すことなくメタルマスク基板をハ
ンドリングすることが可能となる。The metal mask substrate manufactured in this manner can be held between the fingers using the front and back sides of the holding portion 3, making it possible to handle the metal mask substrate without contaminating the metal thin film 2t.
以上述べたように本発明によｎばメタルマスク基板が大
型化してもそのハンドリングは容易となり従来の不都合
が解消さｎることは明らかである。As described above, it is clear that according to the present invention, even if the metal mask substrate becomes large in size, its handling becomes easy and the conventional inconveniences are solved.
第１図は本発明の１実施例を示す正面図及び側聞図、第
２図は本実施例を実現させるための蒸着及びスパッタリ
ング用のメタルプレート基板のホルダー正圓図である。
向１図において、ｌ・・・・・・メタルプレート基板。
２・・・・・・金属薄膜、３・・・・・・保持部、４・
・・・・・ホルダー。
５・・・・・・窓、６・・・・・・ガイドでめる。FIG. 1 is a front view and side view showing one embodiment of the present invention, and FIG. 2 is a full circle view of a holder for a metal plate substrate for vapor deposition and sputtering to realize this embodiment. In Figure 1, l...Metal plate substrate. 2... Metal thin film, 3... Holding part, 4...
·····holder. 5...Window, 6...Guide.
Claims (1)
スク基板の一部分又は複数部分に金属薄膜を有しないハ
ンドリング用保持部を設けたことｔ−％徴とするメタル
マスク基板。1. A metal mask substrate for a photomask, characterized in that a handling holding portion having no metal thin film is provided on a portion or a plurality of portions of the metal mask substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138927A JPS5840552A (en) | 1981-09-03 | 1981-09-03 | Metallic mask substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138927A JPS5840552A (en) | 1981-09-03 | 1981-09-03 | Metallic mask substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5840552A true JPS5840552A (en) | 1983-03-09 |
Family
ID=15233384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56138927A Pending JPS5840552A (en) | 1981-09-03 | 1981-09-03 | Metallic mask substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840552A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61124942A (en) * | 1984-11-22 | 1986-06-12 | Asahi Glass Co Ltd | Photomask blank and its production |
| JPH01148843U (en) * | 1988-04-01 | 1989-10-16 |
-
1981
- 1981-09-03 JP JP56138927A patent/JPS5840552A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61124942A (en) * | 1984-11-22 | 1986-06-12 | Asahi Glass Co Ltd | Photomask blank and its production |
| JPH01148843U (en) * | 1988-04-01 | 1989-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4219199A (en) | Diamond with molybdenum bonded thereto | |
| DK0546470T3 (en) | Cathode sputter coated glass which can be heat treated | |
| US4049347A (en) | Scratch-resistant mask for photolithographic processing | |
| JPS5840552A (en) | Metallic mask substrate | |
| IE32250L (en) | Coating substrates | |
| JPS61198156A (en) | Improved photomask blank | |
| JPH04206930A (en) | Chuck for polishing semiconductor wafer | |
| JPS6224639A (en) | Wafer chuck | |
| US4588379A (en) | Configuration for temperature treatment of substrates, in particular semi-conductor crystal wafers | |
| JPS6235361A (en) | Photomask material | |
| JPS6450426A (en) | Surface treatment | |
| JPS6365621A (en) | Mask for x-ray exposure | |
| JPH0530347Y2 (en) | ||
| JP2943217B2 (en) | X-ray exposure mask and method of manufacturing the same | |
| JPS543470A (en) | Etching method | |
| JPH03179351A (en) | Production of photomask | |
| JPS61198722A (en) | X-ray exposure mask and manufacture thereof | |
| JPS5984245A (en) | Photomask | |
| JPS5570845A (en) | Projection type mask transfer method and mask used for said method | |
| JPH04354668A (en) | Aspherical surface machining method | |
| JPH0475337A (en) | Polishing method of semiconductor substrate | |
| JPH0748107B2 (en) | Pellicle cover | |
| JPH05275319A (en) | X-ray lithography mask and fabrication thereof | |
| Bochynski | Emission electron microscopy of the topography and structure of the surface of silicate glasses | |
| JPH01161716A (en) | Pattern transferring apparatus |