JPS5833154A - Inspecting device - Google Patents
Inspecting deviceInfo
- Publication number
- JPS5833154A JPS5833154A JP13146781A JP13146781A JPS5833154A JP S5833154 A JPS5833154 A JP S5833154A JP 13146781 A JP13146781 A JP 13146781A JP 13146781 A JP13146781 A JP 13146781A JP S5833154 A JPS5833154 A JP S5833154A
- Authority
- JP
- Japan
- Prior art keywords
- defect
- inspection
- wafer
- primary
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
本発−はウェーハ等の画板上の欠陥部のＩＩ＃異点を検
査する装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for inspecting II# abnormalities in defective areas on a drawing board such as a wafer.
シリコン基板（ウェーハ）を用いてシリコン牛尋＃装置
を製造する場合、ウェーハの表面に存在する欠陥、例え
ば付着した塵埃やｌ！麹状の異物は製造される早導体装
置の不良原因となる。＠に微細パターン化された最近の
苧尋体１１ｉ１ｅｃおいては。When manufacturing silicon equipment using a silicon substrate (wafer), defects such as attached dust and l! Koji-like foreign matter causes defects in manufactured fast conductor devices. In the recent 11i1ec body, which is finely patterned in @.
前述したような微細な欠陥も亭導体−驚の良否に大きな
影響をおよイしている。このため、製造に蒙しては欠陥
の検査やその員使Ｍｓの追求が必須のものとされており
、検査装置が要求されるに到っ曵いる−
ところｔ％従来のこの種の検査羨置虻おいては、ウェー
ハＩＩＩＩＫ光を照射し、欠陥箇所において発生する乱
反射光を光学的に拡大しかつこれを電気音ＩＫ変換する
ことにより欠陥を検査する構成のものが採用されている
。この装置によれば、ウェーへ壷画の欠陥を煙時間で検
査！きるという利点を有するが、検査可能な欠陥は１μ
諷以上の欠陥であり、しかも光棲釣拡大（ｌｌｌＩＩ黴
鏡）で得られる不鮮明な欠陥像と欠陥数のみであり、欠
陥の状態を詳細に検査し得るのに十分な情報を得すこと
ができないという問題がある。Even the minute defects mentioned above have a great influence on the quality of the conductor. For this reason, inspection for defects and the pursuit of inspection staff are essential in manufacturing, and inspection equipment is increasingly required. In this field, a configuration is adopted in which defects are inspected by irradiating the wafer with IIIK light, optically magnifying the diffusely reflected light generated at the defective location, and converting this into electrical sound IK. According to this device, defects in vases can be inspected in seconds! However, the number of defects that can be inspected is 1μ.
The defect is more than just a joke, and since only a vague defect image and the number of defects can be obtained using the Kosei-Tsuri magnification (Ill II mold mirror), it is difficult to obtain enough information to inspect the condition of the defect in detail. The problem is that it can't be done.
したがって本発明の目的は、Ｎ１［上の欠陥を面職食体
にわたって検査する１次検査部と、欠陥部位を詳細に検
査する２次（３次・・・・・・ｎ次）検査部と、これら
両検査部間罠介装した欠陥位置配憶手段とで構成するこ
とにより、ｗＩ！上の欠陥等の轡異点を迅速に検査し得
るのはもとより、欠Ｓ勢の４１１ＪＩ点の状態や微小な
欠Ｓ郷の峙＾点を詳細（検査でき、これＫより多くの情
報を得ることができ検査装置を提供することにある。Therefore, the purpose of the present invention is to provide a primary inspection section that inspects the defects on the surface of the N1 [ , and a defect location storage means interposed between these two inspection sections, wI! In addition to being able to quickly inspect abnormalities such as the above defects, it is also possible to inspect in detail the condition of the 411JI point of the missing S group and the position of the minute S missing point, and obtain more information than K. Our goal is to provide testing equipment.
以下、本発明を図面の実施ｆ４に１づいて説明する。Hereinafter, the present invention will be explained based on the embodiment f4 of the drawings.
図は本発明の検査装置の全体構成図であり、ｌは１次検
査部、２は２次検査部である。１次検査部１は被検ＩＩ
坂であるウェーハ３をＸＹテーブル４上に載置しており
、このウェーハ３１Ｎ１１１にはレーザ光源５からのレ
ーザ党りを照射する。また、ウェーハ３上方には欠陥検
出ＩＩ６を配置し、前記レーず光のウェーハ表両での乱
反射光り。を検出する。更Ｋ、前記ＸＹテーブル４には
座標読電器）を付設し、ＸＹテーブル位置からウェーハ
１０塵榔位置を読み取り、これを座標配憶装置８内のカ
セットテープ９内に記憶で倉る。The figure is an overall configuration diagram of the inspection apparatus of the present invention, where l is a primary inspection section and 2 is a secondary inspection section. Primary inspection section 1 is subject II
A wafer 3, which is a slope, is placed on an XY table 4, and this wafer 31N111 is irradiated with a laser beam from a laser light source 5. Further, a defect detection II 6 is arranged above the wafer 3, and the laser light is diffusely reflected on both sides of the wafer. Detect. Furthermore, a coordinate reader (coordinate reader) is attached to the XY table 4 to read the dust position of the wafer 10 from the XY table position and store it in a cassette tape 9 in the coordinate storage device 8.
一方、２次検査ｌＩ！はＸＹテーブル１０上に載置した
ウェーハを気書状ＩＩＫ収納する真空試料型１１を有し
、かつウェーハ３の上方には電子１ＩＩ１１１鋺１２お
よびこれに連設した螢光ＸＩＩ分析ｓ１３を設けている
。また、ＸＹテーブルＩＯＫは座標１１ｍｌＨ４とテー
プデツキ１５を連設し、前記カセットチー１９をテープ
デツキｌｌ５Ｋて絖み出すことによりカセット内に記憶
された位置にウェーハを移動させ為ことができる。１６
はモニタである。On the other hand, secondary inspection lI! has a vacuum sample mold 11 for storing a wafer placed on an XY table 10, and above the wafer 3 is provided an electron 1II 111 12 and a fluorescent XII analysis s13 connected thereto. . Further, the XY table IOK has a coordinate 11mlH4 and a tape deck 15 connected to each other, and the wafer can be moved to the position stored in the cassette by protruding the cassette chip 19 from the tape deck 115K. 16
is a monitor.
以上の構威虻よれば、１次検査＠１ではＸＹ予−プル４
上のウェーハ３表ＩＩＫレーザ党を照射すれは、ウェー
への欠陥箇所↑レーザ光は乱反射され欠陥検出ｓ６に入
射する。欠陥検出ｓ６は乱反射光を光学的に拡大しかつ
電気傷号Ｋｌｌ＋換した上で所定の検査ＩＩ（Ｉｆ示せ
ず）へ送り欠陥検査出力とする。一般的な量童工１１ｃ
おいて欠陥数レベル情報を得る場合はこの段階で評ｇＡ
８れる。前記検査器への出力と同時に、出力の一部は烏
標記憶鋏１１ＢＫ入力され、ここでＸＹテーブル４の座
標読取器７の出力備考と共にカセットテープ９に記憶さ
れる。According to the structure above, in the primary inspection @1, the XY pre-pull 4
When the upper wafer 3 is irradiated with the IIK laser beam, the laser beam is diffusely reflected and enters the defect detection s6 at a defective point on the wafer. Defect detection s6 optically magnifies the diffusely reflected light and converts it into an electrical flaw signal Kll+, and then sends it to a predetermined inspection II (If not shown) as a defect inspection output. General Quantity Worker 11c
If you want to obtain defect count level information at this stage, evaluate gA at this stage.
8. Simultaneously with the output to the inspection device, a part of the output is input to the grating mark storage scissors 11BK, where it is stored on the cassette tape 9 together with the output notes of the coordinate reader 7 of the XY table 4.
そして、欠陥の更に詳細な情報を得るためには前記ウェ
ーハ３を２次検査＠７１のＸＹテーブル１゜上に載置す
る一方、カセットテープ９のテープデツキ１５内にセッ
トする。これにより、カセットテープ９内に記憶された
座標位置が読み出され、塵榔貌堆器１４と協働してウェ
ーハ３の対応する欠陥を電子顯黴鏡１２に対同位置させ
る。これＫより、この欠陥を電子原黴鏡１２および螢光
ＸＩＩ分析＠ １３ Ｋて評１ｌｌＫ検査することがで
きる。In order to obtain more detailed information about defects, the wafer 3 is placed on the XY table 1° of the secondary inspection @ 71, and the cassette tape 9 is set in the tape deck 15. As a result, the coordinate position stored in the cassette tape 9 is read out, and the corresponding defect on the wafer 3 is positioned in the same position on the electronic mold mirror 12 in cooperation with the dust depositor 14. From this K, this defect can be inspected using an electron microscope 12 and a fluorescent XII analysis@13K.
したがって、この検１１１１１＃ｃよれ＃ｉミーラニー
ハル１ｍ存在する火陥の概要や敷部は１次検査部ｌのみ
で迅速に検査することができる一方、欠陥の形状、付着
異物の場合の材質等は２次検査部２を併用することによ
り検出でき、しかもこの２次検査部の検査において番エ
ウエーハの食面を対象とする必要はな（１次検査ＩＩＩ
において配憶されたウェーハ箇所のみでよいために検査
時間の短縮化を図ること−できる。そし【、２次検査部
２においては、１μ翼以下の欠除−鮮＠に検査でき、欠
陥の状態や原因を検査する上での十分な情報を得ること
ができる。Therefore, while it is possible to quickly inspect the outline of the existing fire pit and the floor area using only the primary inspection section l, the shape of the defect and the material in the case of attached foreign matter, etc. It can be detected by using the secondary inspection section 2 together, and there is no need to target the eating surface of the numbered wafer in the inspection of this secondary inspection section (first inspection III).
Inspection time can be shortened because only the wafer locations stored in the wafer location are required. The secondary inspection section 2 can inspect for defects of 1μ or less, and can obtain sufficient information for inspecting the state and cause of defects.
ここで、前例のｌｌｌ−では１次、２次の各検査部を儒
ｊｌＪｓｃ験けているが、これを機械的に一体のものと
して構成することは極めて膵島である。また、欠陥の位
置記憶手段は前例のテープＫＷｋらず牛導体装置のメモ
リを刹期するようにしてもよい。更に、 ２次検査ＩＢ
虻は寸法検査器１色調検査器部■釣に応じて他の器機を
設置するようにしてもよい。Here, in the previous example, the primary and secondary examination parts were tested, but it is extremely important to configure them mechanically as one body. Furthermore, the defect location storage means may be stored in the memory of the conductor device, rather than the tape KWk as in the previous example. Furthermore, secondary inspection IB
For horseflies, there is a dimension tester, a color tester, and other equipment may be installed depending on the fishing.
以上のよ５に＊尭−の欠陥検査出力によれば、ｗＩ［の
食菌を検査して欠陥を検出する１次検査部と、１次検査
ｗＫて検出された欠陥を詳細に検出する２次検査部と、
これら両検査部間に介鋏して１次検査部でのｍｓの欠陥
位置を記憶する欠陥位置記憶手段とを備えているので、
欠陥の概要を迅速に検出できるのはもとより、欠陥の状
態やその原因、更には徽小欠鍮を％短時間でかっ詳細に
検出）き、欠陥の検査において十分な情報を得ることが
できるという効果を奏する。According to the defect inspection output of *Ya- as described in 5 above, the primary inspection section inspects wI[ for phagocytic bacteria and detects defects, and the 2nd section detects defects detected by the primary inspection wK in detail. Next inspection department and
Since a defect position storage means is provided between these two inspection sections and stores the defect position in ms in the primary inspection section,
Not only can it quickly detect an overview of defects, but it can also detect the state of defects, their causes, and even small missing pieces in a very detailed manner (in a % short period of time), providing sufficient information for defect inspection. be effective.
！＠ＩＩＩの簡単な説− 図は本発明装置の全体構成図である。! @III’s simple theory- The figure is an overall configuration diagram of the device of the present invention.
ｌ−”−を次検査部、２・・・２次検査部、３・・・ウ
エーハ、６・・・欠陥検査器、８・−座標記憶装置、９
カ竜ットテープ、１２・・・電子顕微鏡、１３・・・
螢光Ｘ−分析器、１５−・テープデツキ。l-"- is the next inspection section, 2...secondary inspection section, 3...wafer, 6...defect inspection device, 8.-coordinate storage device, 9
Karyut tape, 12...Electron microscope, 13...
Fluorescent X-analyzer, 15-tape deck.
代履人 弁理士 薄 １）刹 幸Agent: Patent attorney Usui 1) Yuki Setsu
Claims (1)
装置において゛、前記Ｗ＊上を検査して特異点を検出す
る１次検査部と、前記１次検査部において検出された特
異点を部分的かつ詳細に少なくともＩＩＩＡＬ上検査す
るｎ次検査部と、これらの複数段階の検査部間虻介装し
て両検査部を連結しかつ前記検出した特異点の位置を記
憶する特異点位置記憶手段とを備えることを特徴とする
検査装置。In an inspection device that detects defects such as central grain foreign objects on i, ms, there is a primary inspection section that inspects the W* top to detect singular points, and a primary inspection section that detects singularities detected in the an n-th inspection section that partially and in detail inspects a point on at least IIIL; and a singular point that connects both inspection sections by interposing a gadfly between these multiple stages of inspection sections and stores the position of the detected singular point. An inspection device comprising a position storage means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13146781A JPS5833154A (en) | 1981-08-24 | 1981-08-24 | Inspecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13146781A JPS5833154A (en) | 1981-08-24 | 1981-08-24 | Inspecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5833154A true JPS5833154A (en) | 1983-02-26 |
| JPH0325738B2 JPH0325738B2 (en) | 1991-04-08 |
Family
ID=15058637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13146781A Granted JPS5833154A (en) | 1981-08-24 | 1981-08-24 | Inspecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5833154A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60194535A (en) * | 1984-02-22 | 1985-10-03 | ケイエルエイ・インストラメンツ・コ−ポレ−シヨン | Device for electrically controlling wafer inspecting unit |
| JPS60202949A (en) * | 1984-02-22 | 1985-10-14 | ケイエルエイ・インストラメンツ・コ−ポレ−シヨン | Method and device for automatically inspecting patterned wafer |
| JPS6199845A (en) * | 1984-10-22 | 1986-05-17 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Optical defect detector |
| JPS61253758A (en) * | 1985-04-30 | 1986-11-11 | Shimadzu Corp | Device for analyzing minute area |
| JPS61267246A (en) * | 1985-05-21 | 1986-11-26 | Hitachi Ltd | Foreign matter detector |
| JPS625547A (en) * | 1985-07-01 | 1987-01-12 | Ulvac Corp | Apparatus for checking foreign matter on substrate surface |
| JPS6391947A (en) * | 1986-10-03 | 1988-04-22 | Jeol Ltd | X-ray microanalyzer |
| JPH01147513A (en) * | 1987-12-04 | 1989-06-09 | Hitachi Ltd | Foreign matter analyzer |
| JPH03181848A (en) * | 1989-12-12 | 1991-08-07 | Sharp Corp | Apparatus for evaluating semiconductor material |
| EP0685731A1 (en) * | 1994-06-02 | 1995-12-06 | Mitsubishi Denki Kabushiki Kaisha | Positioning method and analysis method of fine foreign matter and analyzer used therefor |
| JP2002168793A (en) * | 2000-11-30 | 2002-06-14 | Fuji Photo Film Co Ltd | Surface defect inspection device and surface defect inspection method |
| JP2004170092A (en) * | 2002-11-18 | 2004-06-17 | Hitachi Electronics Eng Co Ltd | Surface inspection method and surface inspection apparatus |
| JP2008014822A (en) * | 2006-07-06 | 2008-01-24 | Canon Chemicals Inc | Inspection device for plate body |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165362A (en) * | 1974-11-30 | 1976-06-05 | Nissin Electric Co Ltd | |
| JPS5618708A (en) * | 1979-07-23 | 1981-02-21 | Siemens Ag | Optoelectronic inspector |
-
1981
- 1981-08-24 JP JP13146781A patent/JPS5833154A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165362A (en) * | 1974-11-30 | 1976-06-05 | Nissin Electric Co Ltd | |
| JPS5618708A (en) * | 1979-07-23 | 1981-02-21 | Siemens Ag | Optoelectronic inspector |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202949A (en) * | 1984-02-22 | 1985-10-14 | ケイエルエイ・インストラメンツ・コ−ポレ−シヨン | Method and device for automatically inspecting patterned wafer |
| JPS60194535A (en) * | 1984-02-22 | 1985-10-03 | ケイエルエイ・インストラメンツ・コ−ポレ−シヨン | Device for electrically controlling wafer inspecting unit |
| JPS6199845A (en) * | 1984-10-22 | 1986-05-17 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Optical defect detector |
| JPS61253758A (en) * | 1985-04-30 | 1986-11-11 | Shimadzu Corp | Device for analyzing minute area |
| JPS61267246A (en) * | 1985-05-21 | 1986-11-26 | Hitachi Ltd | Foreign matter detector |
| JPS625547A (en) * | 1985-07-01 | 1987-01-12 | Ulvac Corp | Apparatus for checking foreign matter on substrate surface |
| JPH0527939B2 (en) * | 1985-07-01 | 1993-04-22 | Ulvac Corp | |
| JPH0528466B2 (en) * | 1986-10-03 | 1993-04-26 | Nippon Electron Optics Lab | |
| JPS6391947A (en) * | 1986-10-03 | 1988-04-22 | Jeol Ltd | X-ray microanalyzer |
| JPH01147513A (en) * | 1987-12-04 | 1989-06-09 | Hitachi Ltd | Foreign matter analyzer |
| JPH03181848A (en) * | 1989-12-12 | 1991-08-07 | Sharp Corp | Apparatus for evaluating semiconductor material |
| EP0685731A1 (en) * | 1994-06-02 | 1995-12-06 | Mitsubishi Denki Kabushiki Kaisha | Positioning method and analysis method of fine foreign matter and analyzer used therefor |
| US5715052A (en) * | 1994-06-02 | 1998-02-03 | Mitsubishi Denki Kabushiki Kaisha | Method of detecting the position and the content of fine foreign matter on substrates and analyzers used therefor |
| JP2002168793A (en) * | 2000-11-30 | 2002-06-14 | Fuji Photo Film Co Ltd | Surface defect inspection device and surface defect inspection method |
| JP2004170092A (en) * | 2002-11-18 | 2004-06-17 | Hitachi Electronics Eng Co Ltd | Surface inspection method and surface inspection apparatus |
| JP2008014822A (en) * | 2006-07-06 | 2008-01-24 | Canon Chemicals Inc | Inspection device for plate body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0325738B2 (en) | 1991-04-08 |
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