JPS583214B2 - LCD holding board - Google Patents
LCD holding boardInfo
- Publication number
- JPS583214B2 JPS583214B2 JP55104194A JP10419480A JPS583214B2 JP S583214 B2 JPS583214 B2 JP S583214B2 JP 55104194 A JP55104194 A JP 55104194A JP 10419480 A JP10419480 A JP 10419480A JP S583214 B2 JPS583214 B2 JP S583214B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- anhydride
- polyimide
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Description
【発明の詳細な説明】
本発明は液晶分子を初期状態(未励起状態)でホモジニ
アス配向状態にしておくことが必要な液晶表示装置に使
用可能な初期のホモジニアス配向を良質にする手段を施
した液晶扶持基板に関するものである。[Detailed Description of the Invention] The present invention provides a means for improving the quality of the initial homogeneous alignment that can be used in a liquid crystal display device that requires liquid crystal molecules to be homogeneously aligned in an initial state (unexcited state). This invention relates to a liquid crystal supporting substrate.
従来このような液晶分子の初期状態におけるホモジニア
ス配向を良好にする手段として、基板上に酸化珪素等の
斜方蒸着膜を形成する方法や各種表面処理剤、有機高分
子等の膜を形成し、その膜をラビング処理する方法等が
知られている。Conventionally, as a means to improve the homogeneous alignment of liquid crystal molecules in the initial state, methods include forming an obliquely evaporated film of silicon oxide or the like on a substrate, forming a film of various surface treatment agents, organic polymers, etc. A method of rubbing the film is known.
しかしこれら公知の方法にはそれぞれ以下に述べるよう
な欠点があった。However, each of these known methods has drawbacks as described below.
すなわち、酸化珪素等の斜方蒸着膜は液晶物質の種類に
よって配向能に差があり全く配向しないような液晶物質
も存在する。That is, the orientation ability of an obliquely deposited film such as silicon oxide differs depending on the type of liquid crystal substance, and there are liquid crystal substances that do not align at all.
これは液晶の温度特性あるいは電気光学特性を改善する
ために各種の液晶を混合して使用する場合に非常に大き
な障害となる。This is a very serious problem when using a mixture of various liquid crystals to improve the temperature characteristics or electro-optical characteristics of the liquid crystal.
また、各種表面処理剤、有機高分子等の膜を形成してそ
の膜をラビング処理する方法では膜の耐熱性が低いため
に、素子組立時の加熱によって膜が劣化し、配向性が低
下する等の欠点をもつものがほとんどで、配向規制力の
耐熱性がよいのはポリイミド等の耐熱性有機高分子膜に
限られていた。In addition, in the method of forming a film of various surface treatment agents, organic polymers, etc. and then rubbing the film, the heat resistance of the film is low, so the film deteriorates due to heating during device assembly and the orientation deteriorates. Most of them have the following drawbacks, and only heat-resistant organic polymer films such as polyimide have good heat resistance for orientation regulation.
しかしながら、これらの公知のポリイミド系高分子膜は
、その基板面との接触性がわるいためにラビング処理の
際に塗膜に部分的に膜はがれが生じ、そのためにドメイ
ンが発生する等の配向不良がおこる欠点があった。However, these known polyimide-based polymer films have poor contact with the substrate surface, resulting in partial peeling of the coating during the rubbing process, resulting in poor alignment such as the formation of domains. There was a drawback that this occurred.
本発明者らは従来技術の上記の欠点をなくすべく検討し
た結果本発明に至った。The present inventors conducted studies to eliminate the above-mentioned drawbacks of the prior art, and as a result, they arrived at the present invention.
すなわち本発明は、どの様な液晶物質であっても液晶の
分子軸を基板面に対し平行にかつ基板面の特性方向に配
向させ、かつこの液晶配向規制力が耐熱性に優れ、なお
かつ対ラビング性を向上させたことによって液晶表示素
子組立に制限を与えず経時的に安定で長寿命かつ高性能
の液晶表示装置を提供するものである。In other words, the present invention allows the molecular axis of the liquid crystal to be aligned parallel to the substrate surface and in the characteristic direction of the substrate surface, regardless of the liquid crystal substance, and this liquid crystal alignment regulating force has excellent heat resistance and is resistant to rubbing. By improving the performance, it is possible to provide a liquid crystal display device that is stable over time, has a long life, and has high performance without imposing any restrictions on the assembly of liquid crystal display elements.
本発明は、液晶扶持基板上の液晶に面する側に電極を設
ゆ、該基板及び電極上に、カルボン酸無水物、ジアミン
およびジアミノシロキサンを反応させて得られるポリア
ミド酸を脱水閉環して得られるポリイミドシリコン系高
分子被膜を形成してなる液晶扶持基板に関する。In the present invention, an electrode is provided on the side facing the liquid crystal on a liquid crystal supporting substrate, and a polyamic acid obtained by reacting a carboxylic acid anhydride, a diamine, and a diamino siloxane is dehydrated and ring-closed on the substrate and the electrode. The present invention relates to a liquid crystal supporting substrate formed with a polyimide silicon-based polymer film formed thereon.
本発明で用いるポリイミドシラン系高分子の前駆体であ
るポリアミド酸はカルボン酸無水物、ジアミン及びジア
ミノシロキサンの反応により合成される。Polyamic acid, which is a precursor of the polyimidosilane polymer used in the present invention, is synthesized by reaction of carboxylic acid anhydride, diamine, and diaminosiloxane.
これらの反応は無水条件下、好ましくは、50℃または
それ以下の温度で行なわれる。These reactions are carried out under anhydrous conditions, preferably at temperatures of 50°C or less.
カルボン酸無水物、ジアミンおよびジアミノシロキサン
の反応割合は、カルボン酸無水物のモル数とジアミンお
よびジアミノシロキサンのモル数とを等モルとすること
が好ましい。The reaction ratio of the carboxylic anhydride, diamine and diaminosiloxane is preferably such that the number of moles of the carboxylic anhydride is equal to the number of moles of the diamine and diaminosiloxane.
この反応は、ジメチルフォルムアミド、ジメチルアセト
アミド、ジメチルスルフオキシド、N−メチルピロリド
ン等の溶剤の存在下で行なわれる。This reaction is carried out in the presence of a solvent such as dimethylformamide, dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidone, or the like.
カルボン酸無水物としては、たとえばピロメリット酸無
水物、2,3,6.7−ナフタレンテトラカルボン酸無
水物、3.3′,4,4’−ジフエニルテトラカルボン
酸無水物、1,2,5,6−ナフタレンテトラカルボン
酸無水物、2.2’,3,3′−ジフエニルテトラカル
ボン酸無水物、チオフエン−2,3,4,5−テトラカ
ルボン酸無水物、2,2−ビス(3.4−ビス力ルポキ
シフェニル)プロパン無水物、3,4−ジカルボキシフ
エニルスルホン無水物
10−テトラカルボン酸無水物、ビス(3,4一ジカル
ボキシフエニル)エーテル無水物、3,3′,4,4′
−ペンゾフエノンテトラカルボン酸無水物などが用いら
れる。Examples of the carboxylic anhydride include pyromellitic anhydride, 2,3,6.7-naphthalenetetracarboxylic anhydride, 3,3',4,4'-diphenyltetracarboxylic anhydride, 1,2 , 5,6-naphthalenetetracarboxylic anhydride, 2,2',3,3'-diphenyltetracarboxylic anhydride, thiophene-2,3,4,5-tetracarboxylic anhydride, 2,2- Bis(3,4-dicarboxyphenyl)propane anhydride, 3,4-dicarboxyphenylsulfone anhydride, 10-tetracarboxylic anhydride, bis(3,4-dicarboxyphenyl)ether anhydride, 3,3',4,4'
-Penzophenonetetracarboxylic anhydride and the like are used.
ジアミンとしては、たとえばm−フエニレンジアミン、
p−フェニレンジアミン、m−キシレンジアミン、p−
キシレンジアミン、4,4’−ジアミノジフエニルエー
テル、4,4′−ジアミノジフエニルメタン、3.3’
−ジメチル−4,4′−ジアミノジフエニルメタン、3
,3’,5,5’ーテトラメチル−4,4′−ジアミノ
ジフエニルメタン,2,2’−ビス(4−アミノフエニ
ル)プロパン−4.4’−メチレンジアニリン、ベンジ
ジン、4,4’−ジアミノジフェニルスルフイド、4,
4’−ジアミノジフエニルスルホン、1,5−ジアミノ
ナフタレン、3,3′−ジメチルベンジジン、3,3′
−ジメトキシベンジジン、2,4−ビス(β−アミノー
tert−ブチル)トルエン、ビス(4−β−アミノー
tert−プチルフエニル)エーテル、1,4−ビス(
2−メチル−4−アミノベンチル)ベンンルなどが用い
られる。Examples of the diamine include m-phenylenediamine,
p-phenylenediamine, m-xylenediamine, p-
Xylene diamine, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 3.3'
-dimethyl-4,4'-diaminodiphenylmethane, 3
, 3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2,2'-bis(4-aminophenyl)propane-4,4'-methylene dianiline, benzidine, 4,4'-diamino diphenyl sulfide, 4,
4'-diaminodiphenyl sulfone, 1,5-diaminonaphthalene, 3,3'-dimethylbenzidine, 3,3'
-dimethoxybenzidine, 2,4-bis(β-amino-tert-butyl)toluene, bis(4-β-amino-tert-butylphenyl)ether, 1,4-bis(
2-methyl-4-aminobentyl)bennyl and the like are used.
本発明で用いられるジアミノシロキサンとしては、例え
ば一般式
(式中Rは2価の炭化水素基、R1,R2,R3および
R4は1価の炭化水素基、nは1以上の整数である)で
示される化合物が用いられ、その例としては、
などの化合物がある。The diaminosiloxane used in the present invention has, for example, the general formula (wherein R is a divalent hydrocarbon group, R1, R2, R3 and R4 are monovalent hydrocarbon groups, and n is an integer of 1 or more). The compounds shown are used, examples of which include compounds such as.
上記のカルボン酸無水物、ジアミンおよびジアミノシロ
キサンは耐熱性の点からいずれも芳香族系の化合物を用
いることが好ましい。It is preferable to use aromatic compounds as the above-mentioned carboxylic acid anhydride, diamine, and diaminosiloxane from the viewpoint of heat resistance.
ジアミノシロキサンは接着性と耐熱性及び安定,性の関
係からジアミンおよびジアミノシロキサンの総量に対し
て0.1〜50モル%とすることが好ましい。Diaminosiloxane is preferably used in an amount of 0.1 to 50 mol % based on the total amount of diamine and diaminosiloxane in terms of adhesiveness, heat resistance, stability, and properties.
上記ポリアミド酸の基板及び電極上への塗布は、該ポリ
アミド酸をジメチルフォルムアミド、ジメチルアセトア
ミド、ジメチルスルフォキシド、N−メチルピロリドシ
等の0.01〜40重量係溶液として、これをデイップ
法、スピンナ法、スプレー法、印刷法、刷毛塗り法など
により塗布して行なわれる。The above-mentioned polyamic acid is applied onto the substrate and electrodes using a dipping method, a spinner coating method, etc. using a 0.01 to 40% weight solution of dimethylformamide, dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidoxy, etc. It can be applied by methods such as method, spray method, printing method, brush coating method, etc.
塗布後100℃〜400℃、好ましくは250℃〜35
0℃で加熱処理してポリアミド酸を脱水閉環してポリイ
ミドシリコン系高分子被膜が得られる。100℃~400℃ after coating, preferably 250℃~35℃
A polyimide-silicon polymer film is obtained by heat treatment at 0° C. to dehydrate and ring-close the polyamic acid.
以下、実施例及び比較例により本発明を具体的に説明す
る。Hereinafter, the present invention will be specifically explained with reference to Examples and Comparative Examples.
実施例1
N−メチルピロリドン中で1,3−ビス(アミノプロピ
ル)−テトラメチルジシロキサン0.1モルと4,4′
−ジアミノジフェニルエーテル0.9モル及が3,3′
,4,4′−ベンゾフエノンテトラカルボン酸無水物1
.0モルを縮合して得られたポリイミドシラン系高分子
の前駆体であるポリアミド酸の15重量%N−メチルピ
ロリドン溶液をスピンナを用いて酸化インジウムの電極
が形成されたガラス基板に塗布した。Example 1 0.1 mole of 1,3-bis(aminopropyl)-tetramethyldisiloxane and 4,4' in N-methylpyrrolidone
-0.9 mol of diaminodiphenyl ether and 3,3'
,4,4'-benzophenonetetracarboxylic acid anhydride 1
.. A 15% by weight N-methylpyrrolidone solution of polyamic acid, which is a precursor of a polyimidosilane polymer obtained by condensing 0 mol of polyimide silane, was applied using a spinner to a glass substrate on which an indium oxide electrode was formed.
塗布後300℃で1時間加熱閉環させポリイミドシリコ
ン系高分子被膜を1000Aの厚さに形成した。After coating, ring closure was performed by heating at 300° C. for 1 hour to form a polyimide silicon polymer film with a thickness of 1000 Å.
その後、該被膜を一定方向にガーゼでラピング処理を行
なったが、ポリイミドシリコン系高分子被膜にはがれは
生じなかった。Thereafter, the coating was wrapped in a certain direction with gauze, but no peeling occurred in the polyimide silicone polymer coating.
また上記のラビング処理したポリイミドシリコン系高分
子被膜を有する基板の一対を用いて液晶表示セルを作製
したところ、配向性は非常に良好であった。Further, when a liquid crystal display cell was produced using a pair of substrates having the above-mentioned rubbed polyimide silicon polymer film, the alignment was very good.
比較例I
N−メチルピロリドン中で4,4′−ジアミノジフエニ
ルエーテル1.0モルと3,3’,4,4’−ベンゾフ
エノンテトラカルボン酸無水物1.0モルとを縮合して
得られたポリイミドの前駆体であるポリアミド酸の15
重量%N−メチルピロリドン溶液を土記実施例1と同様
の方法で処理してポリイミドの被膜を1000Aの厚さ
に形成した。Comparative Example I 1.0 mol of 4,4'-diaminodiphenyl ether and 1.0 mol of 3,3',4,4'-benzophenonetetracarboxylic acid anhydride are condensed in N-methylpyrrolidone. 15 of polyamic acid, which is the precursor of the obtained polyimide.
A polyimide film having a thickness of 1000 Å was formed by treating a wt % N-methylpyrrolidone solution in the same manner as in Doki Example 1.
その後上記実施例1とまったく同様にしてラビング処理
を行なったところ、部分的に基板からはがれが生じた。Thereafter, when a rubbing process was performed in exactly the same manner as in Example 1, partial peeling occurred from the substrate.
また上記のラビング処理したポリイミド被膜を有する基
板の一対を用いて液晶表示セルを作製したところ、部分
的に配向不良が観測された。Furthermore, when a liquid crystal display cell was produced using a pair of substrates having the above-mentioned rubbed polyimide film, poor alignment was observed in some parts.
実施例および比較例に示すとおり、ポリイミドシリコン
系高分子被膜は基板に対する非常に優れた接着性を示し
、あらゆるラビング処理条件に耐えることができる。As shown in the Examples and Comparative Examples, the polyimide-silicon polymer coating exhibits excellent adhesion to the substrate and can withstand all rubbing treatment conditions.
また液晶配向規制力の耐熱性がきわめて優れているため
、液晶素子組立に制限を与えず経時的に安定で長寿命か
つ、高特性の液晶表示装置を提供することができる。Furthermore, since the heat resistance of the liquid crystal alignment regulating force is extremely excellent, it is possible to provide a liquid crystal display device that is stable over time, has a long life, and has high characteristics without imposing restrictions on the assembly of liquid crystal elements.
Claims (1)
基板及び電極上に、カルボン酸無水物、ジアミンおよび
ジアミノシロキサンを反応させて得られるポリアミド酸
を脱水閉環して得られるポリイミドシリコン系高分子被
膜を形成してなる液晶扶持基板。1 An electrode is provided on the side facing the liquid crystal on a liquid crystal supporting substrate, and a polyimide silicon type obtained by dehydrating and ring-closing a polyamic acid obtained by reacting a carboxylic acid anhydride, a diamine, and a diamino siloxane on the substrate and the electrode. A liquid crystal supporting substrate formed with a polymer film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55104194A JPS583214B2 (en) | 1980-07-28 | 1980-07-28 | LCD holding board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55104194A JPS583214B2 (en) | 1980-07-28 | 1980-07-28 | LCD holding board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5729030A JPS5729030A (en) | 1982-02-16 |
JPS583214B2 true JPS583214B2 (en) | 1983-01-20 |
Family
ID=14374166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55104194A Expired JPS583214B2 (en) | 1980-07-28 | 1980-07-28 | LCD holding board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS583214B2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2653401B2 (en) * | 1987-02-20 | 1997-09-17 | 日立化成工業 株式会社 | Method for producing polyamidoimide silicone polymer |
JP2898674B2 (en) * | 1989-12-25 | 1999-06-02 | 日立化成工業株式会社 | Process for producing siloxane-modified polyimide and its precursor |
JPH05158046A (en) * | 1991-12-04 | 1993-06-25 | Sumitomo Bakelite Co Ltd | Production of polyamic acid for liquid crystal oriented film and liquid crystal oriented film using the acid |
JP2603388B2 (en) * | 1991-12-04 | 1997-04-23 | 住友ベークライト株式会社 | Liquid crystal alignment film |
JPH0711132A (en) * | 1993-07-16 | 1995-01-13 | Toray Ind Inc | Heat-resistant color paste for color filter |
JPH0713012A (en) * | 1993-08-11 | 1995-01-17 | Toray Ind Inc | Heat-resistant colored paste for color filter |
EP1011154B1 (en) | 1998-12-15 | 2010-04-21 | Sony Deutschland GmbH | Polyimide layer comprising functional material, device employing the same and method of manufacturing same device |
-
1980
- 1980-07-28 JP JP55104194A patent/JPS583214B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5729030A (en) | 1982-02-16 |
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