JPS58215004A - Crystal for ion implantation bubble device - Google Patents
Crystal for ion implantation bubble deviceInfo
- Publication number
- JPS58215004A JPS58215004A JP57098117A JP9811782A JPS58215004A JP S58215004 A JPS58215004 A JP S58215004A JP 57098117 A JP57098117 A JP 57098117A JP 9811782 A JP9811782 A JP 9811782A JP S58215004 A JPS58215004 A JP S58215004A
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- crystal
- thin film
- ion
- magnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、イオン注入バブルデバイス用結晶に関し、該
結晶の結晶磁気異方性の絶対値を減少させようとするも
のである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a crystal for an ion implantation bubble device, and is directed to reducing the absolute value of magnetocrystalline anisotropy of the crystal.
技術の背景
磁気バブル装置はＧＧＧ非磁性基板に磁性薄膜をエピタ
キシャル成長させてなる基板を用いるものが多く、従来
はか＼る基板にバブル発生およびゲート用導体パターン
およびバブル転送用磁性パターン等を被着してバブル制
御することが普通であった。しかしメモリの大容量化等
を狙ってバブルが微小化するにつれて、Ｔ、Ｉ、ハーフ
ディスクなどの各素子間にギャップがある転送用磁性パ
ターンを用いる方式は製作上の問題から採用が困難にな
り、代って上記磁性薄膜にイオン注入して無ギヤツプ連
続転送パターンを形成する方式が採用されつ＼ある。即
ちＧＧＧ基板にエピタキシャル成長させた磁性薄膜は基
板厚み方向に磁化容易であるがイオン注入すると基板表
面に平行な方向に磁化容易となり、イオン注入領域と非
注入領域との境界をバブル転送に適するパターン例えば
多数の半円を継ぎ合せたパターンにすると、回転磁界に
従ってバブルは該パターンに沿って移動するようになり
、パーマロイなどで作るハーフディスク転送用磁性パタ
ーンなどは不要どなる。しかも転送パターンはＴ、Ｉま
たはハーフディスクなどのように個々に分離してはいな
い無間隙連続体であり、イオン注入だけでできるから微
細加工が容易で、１μｍ程度の径の微細バブル用のデバ
イスも容易に製作可能である。Background of the technology Many magnetic bubble devices use a substrate made by epitaxially growing a magnetic thin film on a GGG non-magnetic substrate. Conventionally, a conductor pattern for bubble generation and gate, a magnetic pattern for bubble transfer, etc. were attached to the substrate. Bubble control was common. However, as bubbles become smaller with the aim of increasing the capacity of memory, it becomes difficult to adopt methods that use transfer magnetic patterns with gaps between each element such as T, I, and half disks due to manufacturing problems. Instead, a method is being adopted in which ions are implanted into the magnetic thin film to form a gapless continuous transfer pattern. That is, a magnetic thin film epitaxially grown on a GGG substrate is easily magnetized in the direction of the substrate thickness, but when ions are implanted, it becomes easily magnetized in a direction parallel to the substrate surface, and the boundary between the ion implanted region and the non-implanted region is formed into a pattern suitable for bubble transfer, for example. If a pattern is formed by piecing together a large number of semicircles, the bubble will move along the pattern according to the rotating magnetic field, and a magnetic pattern for half-disk transfer made of permalloy or the like will be unnecessary. Moreover, the transfer pattern is a gapless continuum that is not separated into individual parts such as T, I, or half disks, and can be easily fabricated by ion implantation, making it suitable for devices for microscopic bubbles with a diameter of about 1 μm. can also be easily manufactured.
従来技術と問題点
か−るイオン注入用バブルデバイス用結晶つまり上記磁
性薄膜では結晶の磁気異方性定数に＋が問題である。こ
の定数に１はバブル用結晶では通常質であるのでここで
はその絶対値をとってＩＫＩ１で扱うが、１Ｋ１１が大
であるとバブルを転送路に沿って一方向に駆動するのと
その逆方向の駆動とでは必要な駆動力が大きく異なるこ
とになり、バブル駆動が厄介になる。ｌＫ１１が小であ
ればバブルをどの方向へ駆動するのも同じ強さの駆動回
転磁界でよく、バブル駆動が容易であるからバブル用磁
性薄膜にはＩＫＩ ｌの小さいものがよい。（ＹＳｍＬ
ｕＣａ）３ （ＧｅＦｅ）５０１２．はバブル用磁性
薄膜として優れた特性を持っているが、この結晶でＩＫ
Ｉ ｌを減少すべくルテニウムイオンＲｕ３＋を添加す
ることが試みられたが、Ｒｕ３＋の添加は逆にＩＫＩ
ｌを増加させてしまい、ＩＫＩ ｌ減少にはならなかっ
た。Problems with the Prior Art In crystals for bubble devices for ion implantation, that is, in the above-mentioned magnetic thin films, there is a problem in that the magnetic anisotropy constant of the crystal is +. Since 1 in this constant is normal quality for bubble crystals, we take its absolute value and treat it as IKI1 here, but if 1K11 is large, the bubble will be driven in one direction along the transfer path and in the opposite direction. The required driving force is significantly different from that of the bubble drive, which makes the bubble drive troublesome. If lK11 is small, a rotating magnetic field of the same strength can be used to drive the bubble in any direction, and bubble driving is easy, so a magnetic thin film for bubbles with a small IKI l is preferable. (YSmL
uCa)3 (GeFe)5012. has excellent properties as a magnetic thin film for bubbles, but with this crystal, IK
Attempts have been made to add ruthenium ion Ru3+ to reduce IKI, but the addition of Ru3+ conversely reduces IKI.
l increased, but IKI l did not decrease.
発明の目的
本発明はイオン注入バブルデバイスの動作特性向上を狙
って該デバイスに用いる磁性薄膜の異方性定数ＩＫ１
ｌを制御、特に小にしようとするものである。Purpose of the Invention The present invention aims to improve the operating characteristics of an ion-implanted bubble device by improving the anisotropy constant IK1 of a magnetic thin film used in the device.
The purpose is to control l, especially to make it small.
発明の構成
本発明は結晶基板上にエピタキシャル成長して磁性薄膜
を形成しそしてイオン注入によりバブル伝播パターンを
形成されるイオン注入バブルデバイス用結晶において、
（ＹＳｍＬｕＣａ）３ （ＧｅＦｅ）５０＋□なる組
成を持ち、かつ５ Ｃｏ ／ Ｆ ｅが０．１０〜０．
２０の範囲で遷移金属イオンＣ０２＋を添加されて結晶
磁気異方性定数ｌＫ＋ ｌおよび異方性磁界Ｈ４を制御
されてなることを特徴とするものであるが、次に実施例
を参照しながらこれを説明する。Structure of the Invention The present invention provides a crystal for an ion-implanted bubble device in which a magnetic thin film is formed by epitaxial growth on a crystal substrate and a bubble propagation pattern is formed by ion implantation.
(YSmLuCa)3 (GeFe)50+□, and 5Co/Fe is 0.10 to 0.
This is characterized in that transition metal ions C02+ are added in the range of 20% to control the magnetocrystalline anisotropy constant lK+l and the anisotropic magnetic field H4. Explain.
発明の実施例
バブル径１μｍのバブルデバイス用イオン注入Ｓｙｓ結
晶（ＹＳｍＬｕＣａ）３ （ＧｅＦｅ）ａ。Embodiment of the Invention Ion-implanted Sys crystal (YSmLuCa)3 (GeFe)a for a bubble device with a bubble diameter of 1 μm.
１□にコバルトイオンＣ○ を添加した場合のコバルト
添加量対ｌ Ｋ ＋ ｌ （ｅｒｇ ／ａｄ）の関係
を第１図に示す。このグラフから明らかなようにコバル
ト添加量が増すにつれてｌＫ１１はは＼′直線的に減少
し、５ Ｃｏ ／ Ｆ ｅが０．１５を越える辺りから
逆に増加を始める。従って最も好ましい添加量は５ Ｃ
ｏ ／ Ｆ ｅ ＝ ０．１５であるが、０．１０〜０
．２０の範囲なら効果が認められる。これよりコバルト
添加量を少なくしてもまた多くしても効果が薄（なり、
特に多くする場合は、コバルト添加に対応させてｓｙｓ
結晶のある成分本例ではＧｅを減少させるので他の磁気
特性に悪影響を与える恐れがある。なおＩＫＩ １が減
少する範囲はコバルトが２価のイオンＣ０２＋で入って
おり、０．１５を越えて増加する範囲ではこれが３価の
イオンＣｏ”＋に変っていると推定できる。またコバル
トは２価のイオンとして、具体的には酸化コバルトｃｏ
○として添加しないで、Ｃｏ単体で添加すると、ｓＹＳ
結晶中へは３＋ｉＩ［ｉのイオンとして入る恐れがある
。FIG. 1 shows the relationship between the amount of cobalt added and l K + l (erg /ad) when cobalt ions C○ are added to 1□. As is clear from this graph, lK11 decreases linearly as the amount of cobalt added increases, and begins to increase when 5Co/Fe exceeds 0.15. Therefore, the most preferable addition amount is 5C
o/F e = 0.15, but between 0.10 and 0
．． The effect is recognized within the range of 20. Even if the amount of cobalt added is reduced or increased, the effect will be weak (become
In particular, when increasing the amount, sys
Since a certain component of the crystal, in this example, reduces Ge, it may have an adverse effect on other magnetic properties. It can be assumed that in the range where IKI 1 decreases, cobalt is in the form of divalent ion C02+, and in the range where IKI 1 increases beyond 0.15, this is changed to trivalent ion Co''+. Specifically, as a valent ion, cobalt oxide co
If Co is added alone without adding as ○, sYS
There is a possibility that it may enter the crystal as an ion of 3+iI[i.
またＣ０２＋添加でＳＹＳ結晶のｌＫ１１を減少できる
理由は、この磁性酸化物中の８面***置にＣｏ２＋が入
ってその単一イオン性の大きいに１によりＳＹＳ結晶の
に＋（負値）をプラス方向に変化させることによると解
される。Also, the reason why the lK11 of the SYS crystal can be reduced by adding CO2+ is that Co2+ enters the octahedral position in this magnetic oxide, and due to its large single ionicity, the + (negative value) of the SYS crystal increases in the positive direction. This is understood to be due to the change in
第２図は、イオン注入に伴なう異方性磁界Ｈｉ（Ｏｅ）
を注入量Ｄ （Ｘ １０１４／ｃＪ）の関数として求め
たグラフである。○印はコバルトを添加した本発明の磁
性薄膜、・印はコバルトを添加しない従来の磁性薄膜に
ネオンを１００ ＫｅＶでイオン注入したもので測定し
た結果である。コバルトを添加すると特にドーズ量の多
い領域でＨ４が向上する。実際のデバイスでイオン注入
は複数回行なうマルチ法をとっており、これに合せて先
ずネオンをｌＫ１４，５０ＫｅＶで、次に水素を２Ｆ１
６゜５０ ＫｅＶで、更にその後でネオンを２Ｅ１４．
２００ＫｅＶでイオン注入した例ではＨ４の最大値は４
８００ ０ｅに向上した。こ＼でＫ１４は×１０１４を
意味する。他もこれに準する。一般に異方性磁界Ｈ４は
大きい程バブルデバイスとしての特性は良好になると期
待される。Figure 2 shows the anisotropic magnetic field Hi (Oe) associated with ion implantation.
It is a graph obtained as a function of the injection amount D (X 1014/cJ). The ○ mark indicates the result of measurement using the magnetic thin film of the present invention to which cobalt is added, and the * mark indicates the measurement result obtained by ion-implanting neon at 100 KeV into a conventional magnetic thin film to which cobalt is not added. Adding cobalt improves H4, especially in the high dose region. In actual devices, ion implantation is performed multiple times using a multi-method.
6°50 KeV and then neon at 2E14.
In the example of ion implantation at 200KeV, the maximum value of H4 is 4
Improved to 800 0e. Here, K14 means x1014. Others follow suit. Generally, it is expected that the larger the anisotropic magnetic field H4 is, the better the characteristics as a bubble device will be.
こ＼で異方性定数に＋、異方性磁界Ｈｉについて柵体す
ると、Ｅａを結晶磁気異方性エネルギ、直交したｘ、ｙ
、ｚ軸に関する自発磁化の方向余弦をα１．α２．α３
とすると、
Ｅａ ＝ Ｋｏ＋ Ｋ、 （α１′α２′＋α２２α３
′＋α３′α１′）十に２α１′α２′α３′＋・ −
に展開でき、Ｋ１．に２が異方性定数と呼ばれる。Here, if we add + to the anisotropy constant and block the anisotropic magnetic field Hi, then Ea is the magnetocrystalline anisotropy energy, and orthogonal x, y
, the direction cosine of spontaneous magnetization with respect to the z-axis is α1. α2. α3
Then, Ea = Ko+ K, (α1′α2′+α22α3
'+α3'α1') can be expanded to ten times 2α1'α2'α3'+・-, and K1. 2 is called the anisotropy constant.
Ｆ２は小さいので（測定しにくい）こ−では言及しない
。コバルトのような６万晶系では５ｉｎ２θの級数に展
開して
Ｅａ＝に、）＋Ｋｕ、 ５ｉｎ２θ＋Ｋｕ２５ｉｎ４θ
十９００２０．。Since F2 is small (difficult to measure), it will not be mentioned here. In a 60,000 crystal system such as cobalt, it is expanded into a series of 5in2θ, and Ea=)+Ku, 5in2θ+Ku25in4θ
190020. .
とされ、この場合はＫｕｌ、Ｋｕ２が異方性定数と呼ば
れる。異方性磁界Ｈｉは異方性定数をＫｕ、飽和磁化を
Ｍｓとして
Ｈｉ＝２Ｋｕ／Ｍｓ
で表わされる。次に本発明磁性薄膜の製造工程の概要を
示す。Ｙ ２０３ 、 Ｓ ｍ ２０ ｖ 、 Ｌ
ｕ ２０３ 。In this case, Kul and Ku2 are called anisotropy constants. The anisotropic magnetic field Hi is expressed as Hi=2Ku/Ms, where Ku is the anisotropy constant and Ms is the saturation magnetization. Next, an outline of the manufacturing process of the magnetic thin film of the present invention will be described. Y 203, S m 20 v, L
u203.
Ｃａ２Ｏ３，Ｇｅ０２１ Ｆｅ２Ｏ３、と酸化コハル）
Ｃｏｏ （いずれも粉体）を所要量るつぼに入れ、更に
フラックスとしてＰｂ０．Ｂ２Ｏ３を加え、１０５０℃
に加熱して溶融し、数時間その状態にして充分混合させ
る。次にｓ ｏ ｏ ’ｃに落とし、ＧＧＧ基板を回転
させながら融液に浸し、数分間おいて引上げる。これで
ＧＧＧ基板にＣｏｄ（ＹＳｍＬｕＣａ）３ （ＧｅＦ
ｅ）５０＋、なる磁性薄膜が該基板に液相成長する。な
おこのコバルト２＋
ＣＯは（ＹＳｍＬｕＣａ）３側にあるのか（ＧｅＦ２）
５側にあるのかはっきりしないので、こ＼ではＣｏ”
： （ＹＳｍＬｕＣａ）］ （ＧｅＦ ２）５０．
、、なる表現をとった。Ca2O3, Ge021 Fe2O3, and cohal oxide)
Pb0. Add B2O3 and heat to 1050℃
Heat to melt and leave in that state for several hours to mix thoroughly. Next, it is dropped into a SO'C, and the GGG substrate is immersed in the melt while being rotated, and then pulled out after a few minutes. Now Cod(YSmLuCa)3 (GeF
e) A magnetic thin film of 50+ is liquid phase grown on the substrate. Is this cobalt2+ CO on the (YSmLuCa)3 side (GeF2)?
I'm not sure if it's on the 5th side, so here's Co"
: (YSmLuCa)] (GeF2)50.
,, I took the following expression.
発明の詳細
な説明したように本発明によれば、イツトリウム・サマ
リウム・ルテチウム・カルシウム・ゲルマニウム・鉄・
酸素からなる１μφ微小バブル用磁性薄膜の異方性定数
ｌＫ＋ １が小になるので、問題であったバブル動作特
性の結晶方位依存性を緩和でき、また異方性磁界Ｈｉが
大になるのでバブル動作特性に好影響を与えることがで
き、しかも他の磁気特性には悪影響を与えないという利
点が得られる。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, yttrium, samarium, lutetium, calcium, germanium, iron,
Since the anisotropy constant lK+ 1 of the magnetic thin film for 1μφ minute bubbles made of oxygen becomes small, the problem of dependence of the bubble operation characteristics on crystal orientation can be alleviated, and the anisotropic magnetic field Hi becomes large, so the bubble The advantage is that the operating characteristics can be positively influenced, while other magnetic properties are not adversely affected.
第１図は異方性定数ＩＫ＋１の特性図、第２図は異方性
磁界Ｈｉの特性図である。
出願人 富士通株式会社
代理人弁理士 青 柳 稔FIG. 1 is a characteristic diagram of the anisotropy constant IK+1, and FIG. 2 is a characteristic diagram of the anisotropic magnetic field Hi. Applicant Fujitsu Limited Representative Patent Attorney Minoru Aoyagi
Claims (1)
そしてイオン注入によりバブル伝播パターンを形成され
るイオン注入バブルデバイス用結晶において、（ＹＳｍ
ＬｕＣａ）３ （ＧｅＦｅ）５０１２なる組成を持ち
、かっ５ Ｃｏ ／ Ｆ ｅが０．１０〜０．２０の範
囲で遷移金属イオンｃｏ２＋を添加されて結晶磁気異方
性定数ｌＫ１１および異方性磁界Ｈ１を制御されてなる
ことを特徴とするイオン注入バブルデバイス用結晶。In crystals for ion-implanted bubble devices, in which a magnetic thin film is formed by epitaxial growth on a crystal substrate, and a bubble propagation pattern is formed by ion implantation, (YSm
It has a composition of LuCa)3(GeFe)5012, and is doped with transition metal ion co2+ in a range of Co/Fe of 0.10 to 0.20, resulting in a magnetocrystalline anisotropy constant lK11 and anisotropic magnetic field H1. A crystal for an ion-implanted bubble device characterized by a controlled state of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098117A JPS58215004A (en) | 1982-06-08 | 1982-06-08 | Crystal for ion implantation bubble device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098117A JPS58215004A (en) | 1982-06-08 | 1982-06-08 | Crystal for ion implantation bubble device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58215004A true JPS58215004A (en) | 1983-12-14 |
Family
ID=14211353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57098117A Pending JPS58215004A (en) | 1982-06-08 | 1982-06-08 | Crystal for ion implantation bubble device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215004A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711694A (en) * | 1984-11-12 | 1987-12-08 | Commissariat A L'energie Atomique | Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet |
-
1982
- 1982-06-08 JP JP57098117A patent/JPS58215004A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711694A (en) * | 1984-11-12 | 1987-12-08 | Commissariat A L'energie Atomique | Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet |
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