JPS5819385B2 - Rouzukehouhou - Google Patents

Rouzukehouhou

Info

Publication number
JPS5819385B2
JPS5819385B2 JP49100939A JP10093974A JPS5819385B2 JP S5819385 B2 JPS5819385 B2 JP S5819385B2 JP 49100939 A JP49100939 A JP 49100939A JP 10093974 A JP10093974 A JP 10093974A JP S5819385 B2 JPS5819385 B2 JP S5819385B2
Authority
JP
Japan
Prior art keywords
brazing
lead terminal
brazing material
external lead
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49100939A
Other languages
Japanese (ja)
Other versions
JPS5128555A (en
Inventor
穴沢信造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP49100939A priority Critical patent/JPS5819385B2/en
Publication of JPS5128555A publication Critical patent/JPS5128555A/ja
Publication of JPS5819385B2 publication Critical patent/JPS5819385B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明はろう付技術、特に小型の電子回路装置用基板や
容器等に用いられるろう付方法に係るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a brazing technique, and particularly to a brazing method used for small-sized electronic circuit device substrates, containers, and the like.

小型電子回路装置、特に混成集積回路或いは高周波用半
導体装置の発展に伴い種々の絶縁材料が使用される様に
なった。
With the development of small electronic circuit devices, especially hybrid integrated circuits or high frequency semiconductor devices, various insulating materials have come to be used.

周知の如く最近電子回路の小型化の強調と電気的特性面
からの要求から、使用される材料並びに物理的な構造に
大きな制約がかかり、要求される特性の全てを満足せし
める為にはかなり困難な問題が存する。
As is well-known, recent emphasis on miniaturization of electronic circuits and requirements for electrical characteristics have placed significant restrictions on the materials and physical structures used, making it extremely difficult to satisfy all of the required characteristics. There are many problems.

その内の重要な問題はろう付である。An important issue among these is brazing.

電子回路用基板又は容器等の限られた面積にリード線や
帯状リード部材等の金属リード端子をろう付する際、所
定のろう付強度を確保する為にはその構成材料の特質、
金属化技術、ろう付技術の調和がとれていないといけな
いが、一方高周波特性等の電気的な面から単なるろう付
技術の面から考慮した解決を適用出来ないことが多い。
When brazing metal lead terminals such as lead wires and band-shaped lead members to a limited area of an electronic circuit board or container, the characteristics of the constituent materials,
Metalization technology and brazing technology must be in harmony, but on the other hand, it is often impossible to apply solutions that are considered simply from the viewpoint of brazing technology due to electrical aspects such as high frequency characteristics.

例えば第1図に示す如く絶縁基板1の表面に導電層2を
施し、該層2に平型のリード端子3をろう付する場合に
、要求されるろう付強度を得る為には導電層の幅、リー
ド端子の幅、ろう材4の量を適宜に選択しなければなら
ない。
For example, when applying a conductive layer 2 to the surface of an insulating substrate 1 and brazing a flat lead terminal 3 to the layer 2 as shown in FIG. 1, in order to obtain the required brazing strength, it is necessary to The width, the width of the lead terminal, and the amount of brazing material 4 must be selected appropriately.

例えば絶縁基板1として、誘電率が低く且つ熱放散のよ
いベリリアセラミックを採用し、所望の特性インピーダ
ンスを保有せしめる電子回路基板を製作する場合には、
電気的特性を優先せしめる必要から導電層の幅、リード
端子の幅に制限をうけ、要求される導電層の接続強度や
ろう付強度を得る事が困難な事が多い。
For example, when manufacturing an electronic circuit board that uses beryllia ceramic, which has a low dielectric constant and good heat dissipation, as the insulating substrate 1 and has a desired characteristic impedance,
Due to the necessity of prioritizing electrical characteristics, the width of the conductive layer and the width of the lead terminal are limited, and it is often difficult to obtain the required connection strength and brazing strength of the conductive layer.

特に高周波領域に使用する電子回路に於いてその影響は
顕著である。
The effect is particularly noticeable in electronic circuits used in high frequency ranges.

この解決の為に今迄種々提案されている方法として、第
2図に示す如く絶縁基板1の上に設けられた導電層2に
外部引出リード端子3をろう材4でろう付する際に出来
るだけろう付部にろう材4が溜まる様にして歪の緩和を
計るとか、或いは第3図に示す如く絶縁基板1の側面の
一部に導電層2″を設けてろう付の際のろう溜を生じせ
しめてろう付強度を増加せしめる方法がある。
To solve this problem, various methods have been proposed up to now, as shown in FIG. The strain can be alleviated by allowing the brazing material 4 to accumulate in the brazing area, or by providing a conductive layer 2'' on a part of the side surface of the insulating substrate 1 as shown in FIG. There is a method of increasing brazing strength by increasing brazing strength.

その他外部引出リード端子3のろう付部分に孔を設けた
り又は第4図に示す如き形状にしてろう材4が溜り易く
したりする方法も提案されている。
Other methods have also been proposed in which a hole is provided in the brazed portion of the external lead terminal 3 or a shape as shown in FIG. 4 is formed to facilitate the accumulation of the brazing material 4.

しかしながら第2図の場合は実質的にろう材4が外部引
出リード端子3の他の部分に流れてしまうのでろう溜を
歩留よくつくる事は困難であり、又第3図の如き構成の
場合には絶縁基板1の側面導電層2″と裏面導電層2′
の間の実質的静電容量を増加せしめて電気的特性を損わ
しめる欠点がある。
However, in the case of Fig. 2, the brazing material 4 substantially flows to other parts of the external lead terminal 3, so it is difficult to create a wax reservoir with a good yield. There are a side conductive layer 2'' and a back conductive layer 2' of the insulating substrate 1.
The disadvantage is that it increases the substantial capacitance between the two, impairing the electrical characteristics.

又外部引出リード端子の形状に工夫をこらしても多少ろ
う溜がよくなるだけで本質的な解決は得られない。
Furthermore, even if the shape of the external lead terminal is modified, the wax buildup will be improved to some extent, but no essential solution will be obtained.

一方電子回路の組立面から考えた場合に、ろう材が流出
して電子回路素子を固定する所又は金属細線等で接続す
る所に種々の問題が生じ、例えば素子の固定又は金属細
線の接続が不可能になるとか或いは素子を固定出来ても
熱抵抗が増大するとか、接続浮遊容量が増すとか又は金
属細線の接続が出来てもその接続強度が弱いとか、長期
の寿命試験で接続強度が落ちてくる等の問題が生じる。
On the other hand, when considering the assembly of electronic circuits, brazing filler metal leaks out and causes various problems in the places where electronic circuit elements are fixed or connected with thin metal wires. Even if the element can be fixed, the thermal resistance increases, the stray capacitance increases, or even if thin metal wires can be connected, the connection strength is weak, or the connection strength decreases in long-term life tests. Problems such as falling may occur.

本発明の目的は、外部リード端子を含みその他の電気的
、機械的特性を劣化させることなく、所定のろう付強度
を容易に確保することができる新規なろう付方法を提供
することにある。
An object of the present invention is to provide a novel brazing method that can easily ensure a predetermined brazing strength without deteriorating the electrical and mechanical properties of external lead terminals and other parts.

本発明の上記目的は、外部リード端子のろう付すべき部
分に前記外部リード端子よりもろう材が濡れ易い金属を
ろう付は部全周をおおうように予め設け、ろう材がこの
金属全体を覆うようにろう付することを特徴とするろう
付方法によって達成される。
The above-mentioned object of the present invention is to provide in advance a metal to which a brazing material is more easily wetted than the external lead terminal in a part to be brazed of an external lead terminal so as to cover the entire circumference of the part to be brazed, and a brazing material to cover the whole of the metal. This is achieved by a brazing method characterized by brazing as follows.

本発明のろう付技術はこの様にろう付部にはろう材が濡
れ易い(なじみ易い)金属層をその全周にそって選択的
に設け、この金属層が設けられた部分の全体にろう材か
もり上がるようにし、この金属層周辺をもってろう材の
流出を禁止する境界部となした技術である。
In this way, the brazing technology of the present invention selectively provides a metal layer along the entire circumference of the brazing part where the brazing material easily wets (easily adapts to) the brazing material, and the brazing material is applied to the entire area where this metal layer is provided. This is a technique in which the material also rises up, and the area around this metal layer is used as a boundary that prevents the flow of the filler metal.

即ちろう付部にろう材が濡れ易い金属層と濡れにくい金
属層を連続的に配置する事により、接続強度を低下させ
ることなくろう何場所を前記ろう材がぬれやすい金属層
によって限定し、これによって不所望部へのろう材の流
出を禁じ、前記の如き種々の障害を防止するものである
In other words, by sequentially arranging a metal layer that is easy to wet with the brazing material and a metal layer that is difficult to wet with the brazing material, the number of locations for brazing can be limited by the metal layer that is easy to wet with the brazing material without reducing the connection strength. This prevents the brazing material from flowing into undesired areas and prevents the various troubles mentioned above.

また換言すれば、本発明は、外部リード端子とこれがろ
う付される部分とが互いに対向する面のみをろう材で接
続するだけではなく、外部リード端子の全周をろう材が
容易につつみこむように設け、外部リード端子とこれが
ろう付される部分との対向面積を広げることなくろう付
強度を高め、かつ前記金属部材の周辺をろう材流出に対
する塞き止め境界として作用せしめることを特徴とする
ろう付方法である。
In other words, the present invention not only connects only the opposing surfaces of the external lead terminal and the part to which it is brazed with the brazing material, but also enables the brazing material to easily surround the entire circumference of the external lead terminal. The brazing strength is increased without increasing the opposing area between the external lead terminal and the portion to which the external lead terminal is brazed, and the periphery of the metal member acts as a boundary to prevent the brazing material from flowing out. This is a brazing method.

次に本発明の主旨を更に具体的に明白にする為に実施例
に基き第5図を参照しながら説明する。
Next, in order to clarify the gist of the present invention more specifically, an embodiment will be explained with reference to FIG. 5.

第5図は本発明に係るろう付方法の一実施例(基本的実
施例)を説明する為の図であり、同図に示す如く、絶縁
基板11(例えばアルミナ)の表裏に所望の導電層領域
12.12’(例えばM。
FIG. 5 is a diagram for explaining one embodiment (basic embodiment) of the brazing method according to the present invention, and as shown in the figure, a desired conductive layer is formed on the front and back surfaces of an insulating substrate 11 (for example, alumina). Region 12.12' (e.g. M.

−Mn)を施す。-Mn) is applied.

一方外部引出リード端子13(例えばFe−Ni−Co
合金、銅)のろう付すべき部分13′にろう材14(例
えば銀、銅共晶ろう)が濡れ易い(なじみ易い)金属層
15を例えばメッキ、蒸着、スパッタリング等の方法に
よって設けて比換的低い温度(例えば820°C)でろ
う付を行う。
On the other hand, the external lead terminal 13 (for example, Fe-Ni-Co
A metal layer 15 to which the brazing material 14 (e.g., silver, copper eutectic solder) is easily wetted (easily adapted) is provided on the part 13' to be brazed (alloy, copper) by a method such as plating, vapor deposition, sputtering, etc. Brazing is carried out at a low temperature (eg 820°C).

ろう材が濡れ易い金属層15の材質はそれが使用される
被ろう付体によって相対的に定まり例えばリード端子1
3の表面が、銅、Fe−Ni−Co合金の場合には金属
層15はニッケルが、またモリブデン、タングステン、
鉄等の場合にはニッケル、銀、金、銅等が使用される。
The material of the metal layer 15 that is easily wetted by the brazing material is determined by the object to be brazed to which it is used, for example, the lead terminal 1.
When the surface of 3 is made of copper or Fe-Ni-Co alloy, the metal layer 15 is made of nickel, or molybdenum, tungsten,
In the case of iron, etc., nickel, silver, gold, copper, etc. are used.

従って被ろう付体(外部リード端子)としてはろう材が
濡れにくい(なじみ難い)金属を積極的に使用すればよ
り効果的である。
Therefore, it is more effective to use a metal that is difficult for the brazing material to wet (hardly adapt to) as the body to be brazed (external lead terminal).

かくの如くすれば図の如くろう付すべき部分即ち金属層
15の部分にろう溜りが出来ると共に、外部引出リード
端子13の金属層15が被着されている部分以外の部分
即ちろう材が濡れにくい部分がろう材の流出に対する塞
き止め部として作用する。
In this way, as shown in the figure, a pool of wax is formed in the part to be brazed, that is, the part of the metal layer 15, and the part of the external lead terminal 13 other than the part to which the metal layer 15 is adhered, that is, the brazing material is difficult to get wet. The portion acts as a stopper against outflow of the brazing filler metal.

しかもろう材は外部リード端子の端部全体をつつみ込む
ように自然にもり上がるので余分な作業を追加すること
なくろう付面積を有効に広げることができる。
Moreover, since the brazing material naturally rises to encompass the entire end of the external lead terminal, the brazing area can be effectively expanded without adding extra work.

即ち金属層15の部分が強く接合され、結局強いろう付
強度を確保出来ると共に、電子回路基板に実装する際に
障害となる金属細線の接続部へのろう材の流出やろう材
の周囲拡散による接続強度の劣化、接続浮遊容量並びに
接続抵抗の減少を効果的に補償することができる。
In other words, the parts of the metal layer 15 are strongly bonded, which ultimately ensures strong brazing strength, and also prevents the leakage of the brazing material into the joints of thin metal wires and the diffusion of the brazing material into the surrounding area, which can be an obstacle when mounting on an electronic circuit board. Deterioration in connection strength, reduction in connection stray capacitance and connection resistance can be effectively compensated for.

とくに、金属細線の接続部へろう材が侵入した場合には
金属細線の強固な接続ができなくなるが、この発明によ
ればそれを有効に防止でき、金属細線を強固に接続する
ことが可能となる。
In particular, if the brazing material enters the connection portion of the thin metal wires, it becomes impossible to firmly connect the thin metal wires, but according to the present invention, this can be effectively prevented and it is possible to firmly connect the thin metal wires. Become.

なおろう材にぬれやすい金属層15はろう材の中にあっ
てろう材の拡散を防止する役目を果たすように工夫され
ている。
The metal layer 15, which is easily wetted by the brazing material, is located within the brazing material and is designed to prevent the diffusion of the brazing material.

このため安価で使いやすいが、一部が少しでも外気にさ
らされるとその部分から表面酸化をおこし接続はがれや
腐食あるいは接触抵抗の増大をもたらすようなニッケル
等の酸化性金属であっても、本発明ではその欠点を生み
出すことなく十分効果的に使用できる。
Therefore, it is cheap and easy to use, but even if it is an oxidizing metal such as nickel, if a part of it is exposed to the outside air, the surface will oxidize, resulting in peeling, corrosion, or an increase in contact resistance. The invention can be used to full effect without producing its drawbacks.

更に外部リード端子はろう何部全体がろう材で強固に固
着されているので引張りや曲げ等の外的な機械的な力に
対しても極めて対抗力が強い。
Furthermore, since the entire brazing part of the external lead terminal is firmly fixed with a brazing material, it has an extremely strong resistance against external mechanical forces such as tension and bending.

更に、外部リード端子13と導電層領域12との対向面
積を広げることなく強固な接続ができるので、外部リー
ド端子の短縮化および容器の小型化、実装密度の向上を
達成することができる。
Furthermore, since a strong connection can be made without increasing the opposing area between the external lead terminal 13 and the conductive layer region 12, it is possible to shorten the external lead terminal, downsize the container, and improve packaging density.

勿論第4図の外部リード端子構造にこの発明を適用して
もよいことは明らかである。
Of course, it is obvious that the present invention may be applied to the external lead terminal structure shown in FIG.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はろう付技術に於ける基本図、第2〜第4図は従
来のろう付技術を説明する為の図、第5図は本発明の一
実施例によるろう付方法を示す断面図である。 1・・・・・・絶縁基板、2,12・・・・・・導電層
、3,13・・・・・・外部引出リード端子、4.14
・・・・・・ろう材、5.15・・・・・・ろう材が濡
れ易い金属層。
Figure 1 is a basic diagram of brazing technology, Figures 2 to 4 are diagrams for explaining conventional brazing technology, and Figure 5 is a sectional view showing a brazing method according to an embodiment of the present invention. It is. 1... Insulating substrate, 2, 12... Conductive layer, 3, 13... External lead terminal, 4.14
・・・・・・Brazing metal, 5.15・・・Metal layer where the brazing metal easily gets wet.

Claims (1)

【特許請求の範囲】[Claims] 1 外部引出リード端子を導電層にろう付する方法にお
いて、前記外部引出リード端子のろう付部にその全周を
おおうようにろう材が濡れ易い金属体を予め設け、前記
ろう材が濡れ易い金属体の全表面を覆うように前記導電
層と前記外部引出リード端子とをろう付することを特徴
とするろう付方法。
1. In a method of brazing an external lead terminal to a conductive layer, a metal body to which the brazing material easily wets is provided in advance so as to cover the entire circumference of the brazing part of the external lead terminal, and a metal body to which the brazing material easily wets is provided. A brazing method comprising brazing the conductive layer and the external lead terminal so as to cover the entire surface of the body.
JP49100939A 1974-09-04 1974-09-04 Rouzukehouhou Expired JPS5819385B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49100939A JPS5819385B2 (en) 1974-09-04 1974-09-04 Rouzukehouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49100939A JPS5819385B2 (en) 1974-09-04 1974-09-04 Rouzukehouhou

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP7694282A Division JPS5890749A (en) 1982-05-07 1982-05-07 Semiconductor device
JP7694182A Division JPS5890748A (en) 1982-05-07 1982-05-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5128555A JPS5128555A (en) 1976-03-10
JPS5819385B2 true JPS5819385B2 (en) 1983-04-18

Family

ID=14287309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49100939A Expired JPS5819385B2 (en) 1974-09-04 1974-09-04 Rouzukehouhou

Country Status (1)

Country Link
JP (1) JPS5819385B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154970A (en) * 1978-05-26 1979-12-06 Kyushu Nippon Electric Semiconductor device
JPS5890749A (en) * 1982-05-07 1983-05-30 Nec Corp Semiconductor device
JPS5890748A (en) * 1982-05-07 1983-05-30 Nec Corp Semiconductor device
JPS6010762A (en) * 1983-06-30 1985-01-19 Sumitomo Special Metals Co Ltd Composite pin
JPH044534Y2 (en) * 1985-07-09 1992-02-10
JPH02224264A (en) * 1990-01-20 1990-09-06 Sumitomo Electric Ind Ltd Manufacture of semiconductor element mounting substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49674A (en) * 1972-04-19 1974-01-07

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128705Y2 (en) * 1972-01-24 1976-07-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49674A (en) * 1972-04-19 1974-01-07

Also Published As

Publication number Publication date
JPS5128555A (en) 1976-03-10

Similar Documents

Publication Publication Date Title
US5521429A (en) Surface-mount flat package semiconductor device
US5650663A (en) Electronic package with improved thermal properties
US5506446A (en) Electronic package having improved wire bonding capability
JP2917868B2 (en) Semiconductor device and manufacturing method thereof
JPS5819385B2 (en) Rouzukehouhou
JPS6318648A (en) Circuit board using aluminum nitride
JP2620611B2 (en) Substrate for mounting electronic components
JP3297959B2 (en) Semiconductor device
JP3078773B2 (en) Electronic component and method of manufacturing the same
JPH05315467A (en) Hybrid integrated circuit device
JP3251688B2 (en) Lead frame for mounting semiconductor elements
JPS6066842A (en) Semiconductor device
JPS6236391B2 (en)
JPS6236392B2 (en)
JPS6217382B2 (en)
JPS60109256A (en) Plastic semiconductor device
JP2007088190A (en) Package for receiving high heat-dissipation electronic component
JPH06112361A (en) Hybrid integrated circuit
JPH09266265A (en) Semiconductor package
JP2710893B2 (en) Electronic components with leads
JPH03142862A (en) Lead frame
JP4241408B2 (en) Semiconductor device and manufacturing method thereof
JPS6193654A (en) Resin sealed type semiconductor device
JPH05326814A (en) Lead frame for mounting electronic circuit device
JP2000091466A (en) Semiconductor package