JPS58190894A - Epitaxial crystal growth device - Google Patents

Abstract

PURPOSE:To obtain an epitaxial crystal having a stable compsn. of high reliability by maintaining the evaporating component from a vessel for contg. an easily evaporable material of a crystal layer material to be formed on a substrate under specified vapor pressure. CONSTITUTION:A reaction tube 21 is narrowed in a prescribed position B, and a vessel 23 for containing an easily evaporable component among the crystal layer to be formed on a substrate 29 is provided in said position. A vessel 24 for contg. an easily evaporable component and a jig 28 for epitaxial growth are provided so as to sandwich the position B. Thereupon, the substrate 29 is embedded in the recess of the susceptor 26 of the jig 28 and while gaseous H2 is introduced into the tube 21, the temp. distribution in a heating furnace 32 is regulated as shown on a temp. distribution chart 33. In other words, the heating temp. in the part of the vessel 23 is kept lower than the heating temp. in the part of the vessel 24. The vapor pressure of the easily evaporable component in the tube 21 is thus controlled extactly with high accuracy, and the fluctuation in the compsn. of the crystal layer to be formed on the substrate 29 is obviated.

Description

【発明の詳細な説明】 （ａ）　　発明の技術分野 本発明はエピタキシャル結晶成長装置の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to improvements in epitaxial crystal growth apparatus.

（至）技術の背景 ・□　赤外線検知素子のような光電変換素子の形成材料
として、一般に水銀、カドミウム、テルル（Ｈｇ化合物
半導体結晶が用いられている。(To) Background of the Technology □ Mercury, cadmium, and tellurium (Hg compound semiconductor crystals) are generally used as forming materials for photoelectric conversion elements such as infrared sensing elements.

このような化合物半導体結晶を素子形成に部会が良いよ
うに大面積でしかも薄層の状態で得るようにするため、
大面積の結晶が得やすいテ７レル化カドミウム（ＣｄＴ
ｅ）ノ基板上にＨｉｌｌ！：ｔ　ｚｏ（１ｚＴｅ（７）
結晶層をスライディング法を用いだ液相エピタキシャル
成長方法で形成している。In order to obtain such a compound semiconductor crystal in a large area and in a thin layer state so as to be suitable for device formation,
Cadmium trichloride (CdT) is easy to obtain large-area crystals.
e) Hill! on the board! :t zo(1zTe(7)
The crystal layer is formed by liquid phase epitaxial growth using a sliding method.

（０）従来技術と問題点 このような液相エピタキシャル成長方法に用いる従来の
装置を第１図に示す。(0) Prior Art and Problems A conventional apparatus used in such a liquid phase epitaxial growth method is shown in FIG.

図示するように従来の液相エピタキシャル成長装置にお
いては、水素（Ｈｇ）ガス雰囲気内の反応管ｌ内には設
置台２上に設置されたカーボンよりなる支持台３とその
上をスライドして移動するスライド部材４とよりなる液
相エピタキシャ）Ｖ成長用治具５が設置されている。As shown in the figure, in a conventional liquid phase epitaxial growth apparatus, a support table 3 made of carbon is placed on an installation table 2 in a reaction tube l in a hydrogen (Hg) gas atmosphere. A liquid phase epitaxial (V) growth jig 5 consisting of a slide member 4 is installed.

そしてこの支持台８にはＣｄＴｅの基板６が埋設されて
おり、またスライド部材４の液だめ７内には基板上に形
成すべきＨｇ　１−ｘｃｄｘＴｅの結晶層の材一方該反
応管ｌ内には支持台８とスライド部材４よりなる面相エ
ピタキシＡｒ　）し成長用治具５より所定の距離を隔て
て基板−トに形成すべきＨｇ１−ｘｃｄｘ’ｒθの結晶
層のうち易蒸発性成分のＨｇ９を収容した収容容器ＩＯ
が設けられており、これ等のエピタキシャル成長治具す
および収容容８３１０を加熱する加熱炉１１が反応管ｌ
の周囲に設けられている。A CdTe substrate 6 is buried in this support 8, and a material for a Hg 1-xcdxTe crystal layer to be formed on the substrate is contained in the liquid reservoir 7 of the slide member 4. is an easily evaporable component Hg9 of the crystal layer of Hg1-xcdx'rθ to be formed on the substrate at a predetermined distance from the growth jig 5. Container IO containing
A heating furnace 11 for heating these epitaxial growth jigs and a storage container 8310 is connected to a reaction tube l.
is located around the.

ここで従来は加熱炉ＩＯの温度は、エピタキシャル 定の６００℃近傍の温度になるように調節し・収容容器
ｌＯを加熱する温度は該容器１０が占める寸法の範囲に
わたって２６０ｔＥの一定の温度になるように調節して
いる。Conventionally, the temperature of the heating furnace IO is adjusted to be around 600°C, which is the epitaxial constant, and the temperature at which the storage container IO is heated is a constant temperature of 260 tE over the range of dimensions occupied by the container 10. It is adjusted as follows.

このようにしてスフイド部材４の液だめ内のＥ（ｇｌ−
ｘＣｄｘＴθの材料７が溶ｌｉｌＡＬだ時点でスライド
部材４を矢印へ方向にスフイドさせて移動し、基板１６
七に液だめ６を静置してから工ビタキシャｐ成長治具５
が占める寸法の部分の加熱炉１１の温度を局部的に約ｔ
ｔｙ分の温度勾配で低下させ基板５玉にＨｇｘ　ｚｃｄ
ｘＴｅのエピタキシャル層を形成している。そしてＨｇ
１　ｚ（ＭｚＴｅの結晶−を形成する材料のうち易蒸発
性のＨｇを収容容器９よりＨ２ガヌのキャリアガスを用
いて反応管１に飽和させることで液だめ６内のＨｇ１　
、（Ｃｄｘ’ｒｅ　７の材料より易蒸発性のＨｇが蒸発
するのを防止して、基板上に形成されるＨｇｔ−ＸＣｄ
ｚＴｅの結晶層の組成が変動するのを防止するようにし
ている。In this way, E(gl-
When the xCdxTθ material 7 is molten, move the slide member 4 in the direction of the arrow to remove the substrate 16.
7. Leave the liquid reservoir 6 still, and then attach the growth jig 5.
The temperature of the heating furnace 11 in a portion of the dimension occupied by is locally about t
Hgx zcd to 5 balls of the board by lowering the temperature gradient of ty minutes
An epitaxial layer of xTe is formed. and Hg
1z (among the materials that form MzTe crystals, Hg, which is easily evaporated, is saturated in the reaction tube 1 from the storage container 9 using a carrier gas of H2 to reduce the Hg1 in the liquid reservoir 6.
, (Hgt-XCd formed on the substrate by preventing Hg, which is more easily evaporated than the material of Cdx're 7, from evaporating.
This is intended to prevent the composition of the zTe crystal layer from varying.

ところでこのような従来の装置においては易蒸発性のＨ
ｇを収容する収容容器が占める寸法（約５ｎの長さ）の
全域にわたって温度が均一になるよう調節する必要があ
り，このように収容容器の寸法の全域にわたって精度良
く加熱炉の温度を制御することは非常に困難である。However, in such a conventional device, H, which is easily evaporable,
It is necessary to adjust the temperature so that it is uniform over the entire size of the storage container that accommodates g (approximately 5 nm in length), and in this way, the temperature of the heating furnace can be controlled accurately over the entire size of the storage container. That is extremely difficult.

そのため従来の装置を用いた場合では収容容器ｌＯより
蒸発するＨｇの蒸気圧が所定の直に制御できず、したが
って基板上に形成される結晶層の組成が均一にならない
不都合を生じている。For this reason, when the conventional apparatus is used, the vapor pressure of Hg evaporated from the storage container IO cannot be directly controlled in a predetermined manner, resulting in the inconvenience that the composition of the crystal layer formed on the substrate is not uniform.

（■　発明の目的 本発明は上述した欠点を除去し、前述した収容容器１０
より蒸発するＨｇの蒸気圧が一定になるような面相エピ
タキシャル成長装置の提供を目的とするものである。(■ Purpose of the Invention The present invention eliminates the above-mentioned drawbacks and improves the storage container 10 described above.
The object of the present invention is to provide a surface phase epitaxial growth apparatus in which the vapor pressure of evaporated Hg is more constant.

（θ）＠明の構成 かかる目的を達成するだめの本発明の液相エピタキシャ
ル成長装置は、一部を局部的に細く絞り、該絞った箇所
に寵みを設けた反応管内の前記卸１く絞った箇所を挾ん
で法板に広ｌする結晶成長用の治具と、基板上に形成す
べき結晶軸の材料の易蒸発性成分の収容容器とをそれぞ
れ設け、更に前記謹みの部分の加熱温度が易蒸発性成分
の収容容器の加熱温度より低ｌ晶になるようにした加熱
炉を反応管の周囲に設けたことを特徴とするものである
。(θ)@Bright Structure The liquid phase epitaxial growth apparatus of the present invention to achieve the above objective is to narrow a part locally and narrow the hole in the reaction tube, and provide a gap in the narrowed area. A jig for growing crystals that pinches and spreads the crystal on the substrate, and a container for storing easily evaporable components of the material of the crystal axis to be formed on the substrate are provided, and furthermore, the heating temperature of the above-mentioned portion is adjusted. This is characterized in that a heating furnace is provided around the reaction tube so that the crystallization temperature is lower than the heating temperature of the container containing the easily evaporable component.

（０　発明の実施例 以下図面を用いて本発明の一実施例につき詳細に説明す
る。第２図は本発明の液相エピタキシャル成長装置を示
す概略図である。(0 Embodiment of the Invention An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 2 is a schematic diagram showing a liquid phase epitaxial growth apparatus of the present invention.

図示するように本発明に用いる石英製の反応管２１は所
定の位置Ｂで細く絞られて形成されてい外に、内径を測
くするような別のリング部材を挿入して形成しても良い
。そしてこの細く絞られた箇所には基板トに形成すべき
結晶−のうち易蒸発性の成分のＥ（ｇ　２　２　Ａを収
容する窪み２８を設けている。またこの軸く絞った箇所
を挾むようにして水銀２２Ｂを収容する収容容器２４と
釘に設置台２５上に設置して直方体形状のカーボンより
なる支持台２６とそのとをスライドするスフイド部材２
７よりなるエピタキシャル成長用治具２８を設けである
。As shown in the figure, the reaction tube 21 made of quartz used in the present invention is narrowly narrowed at a predetermined position B, and may be formed by inserting another ring member for measuring the inner diameter. . A depression 28 is provided in this narrowed area to accommodate E (g 2 2 A), which is an easily evaporable component of the crystal to be formed on the substrate. A storage container 24 that accommodates mercury 22B in such a manner that the mercury 22B is held therein, a support base 26 made of rectangular parallelepiped carbon that is installed on a nail installation base 25, and a sphoid member 2 that slides therebetween.
An epitaxial growth jig 28 consisting of 7 is provided.

そしてこの支持台２６の凹所にはＣｄｏＰｅの基板２９
を埋設し、スライド部材の液だめ８０にはＨｇｉ　１−
ＸｃｄＸ’ｒｅの材料８１を収容した状態で反応管２１
内にＨ２ガスを導入しながら加熱炉８２の温度を温度分
布線図８８の温度分布になるようにして加熱する。温度
分布線図８８に示すように水銀収容容器２４の部分の温
度は２６５℃の温度に、水銀を収容する窪み２８の箇所
の温度はそれより約ｌθ℃程低い２５５℃に、またエピ
タキシャル成長治具２８３２の温度をｉ１周節する。In the recess of this support stand 26 is a CdoPe substrate 29.
Hgi 1- is buried in the liquid reservoir 80 of the slide member.
The reaction tube 21 containing the XcdX're material 81
While introducing H2 gas into the heating furnace 82, the temperature of the heating furnace 82 is heated so that it becomes the temperature distribution shown in the temperature distribution diagram 88. As shown in the temperature distribution diagram 88, the temperature of the mercury container 24 is 265°C, the temperature of the recess 28 for mercury is 255°C, which is about lθ°C lower, and the temperature of the epitaxial growth jig is 255°C. The temperature of 2832 is changed for i1 cycles.

このようにしてスライド部利２７の液だめ８０内のＩ（
ｇｌ−）（ＣｄｚＴｅの材料８１が充分溶融した時点で
スライド部材２７を矢印Ｃの方向にスライドさせて基板
２９ヒに故だめ８０を静置させる。In this way, I(
gl-) (When the CdzTe material 81 is sufficiently melted, the slide member 27 is slid in the direction of the arrow C to leave the dam 80 still on the substrate 29.

その後このエピタキシャル成１逮治具２８の部分の温度
が１℃／分の、４１＋　＆で＋Ｉｔ　’ｌ”するように
加熱炉８２の温度を低下させて基板、ににＨｇ　１−ｚ
ｃｄ、ｙ、Ｔｅの結晶−を形成する。Thereafter, the temperature of the heating furnace 82 is lowered so that the temperature of the epitaxial growth jig 28 is 1° C./min, 41+&+It'l'', and the substrate is exposed to Hg 1-z.
Forms cd, y, and Te crystals.

この状態で水銀収容容器２４よりＨｇのキャリアガスに
よって運ばれるＥ（ｇの蒸或はその水銀収容容器２４よ
り２’Ｃ低い温度で制御されている窪み２３内に凝固し
て液状の水銀となって入り込み、この水銀の蒸気圧によ
って水銀収容容器２４より蒸発した水銀の蒸気圧が制御
されるようになる。In this state, E(g) carried by the Hg carrier gas from the mercury storage container 24 evaporates or solidifies into liquid mercury in the depression 23, which is controlled at a temperature 2'C lower than the mercury storage container 24. The vapor pressure of the mercury evaporated from the mercury storage container 24 is controlled by the vapor pressure of this mercury.

つまり加熱炉の横方向の寸法で寸法の小さい水銀を収容
する窪み２８はｔ温度を正確に制御するのは比較的容易
であり、この温度を正確に制御するこ□とで反応管糸内
のｆ（ｇの飽和蒸気圧を所定の鎖に制御するようにした
ものである。In other words, it is relatively easy to accurately control the t temperature of the recess 28 that accommodates mercury, which has a small size in the lateral direction of the heating furnace. The saturated vapor pressure of f(g) is controlled to a predetermined chain.

つ筐り開管式の反応管に２いて易蒸発性のＨｇを収容す
る容器を二つ設け、Ｚ温度制御をしやすい容積の小さい
容器の温度の方を温度制御がし難い容積の大きい谷然の
温度より低温度に精密ｖｃ制御し、しかる後、大きい容
器より蒸発してくるＨｇの蒸気の反応管内の飽和蒸気圧
を小さい容器より蒸発してくるＨｇの蒸気の飽和蒸気圧
で制御するようにしたものである。Two containers containing Hg, which is easily evaporated, are installed in a two-chassis open-tube reaction tube, and the temperature of the small volume container that is easy to control the Z temperature is lower than the temperature of the large volume container that is difficult to control. After that, the saturated vapor pressure in the reaction tube of the Hg vapor evaporating from the large container is controlled by the saturated vapor pressure of the Hg vapor evaporating from the small container. This is how it was done.

このようにすれば反応管内のｌ（ｇの占める蒸気圧が品
精度に正確に制御されるため、基板上に形成されるＨｇ
ｌ　１ｃｄＸＴθの結晶−が組成変動の生じなく安定に
形成される。In this way, the vapor pressure occupied by l(g) in the reaction tube can be accurately controlled, so that the Hg formed on the substrate can be controlled accurately.
A crystal of l 1cdXTθ is stably formed without compositional fluctuation.

■　発明の効果 以上述べたように本発明のエピタキシャル結晶成長装置
１ｔｖｃよれば高信頼度の組成の安定したエピタキシャ
ル結晶が得られる。(2) Effects of the Invention As described above, the epitaxial crystal growth apparatus 1tvc of the present invention makes it possible to obtain highly reliable epitaxial crystals with a stable composition.

また以■の実施例の池に本発明の装置はＨｇ以外の曲の
易蒸発性の成分を含む化自物半導体結晶を液１目エピタ
キシャル法にて形成する場合に通用できることは勿論で
ある。Furthermore, it goes without saying that the apparatus of the present invention can be used in the case of forming an organic semiconductor crystal containing easily evaporable components other than Hg by the liquid crystal epitaxial method.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の面相エビタギシャ／Ｌ／戎長装置を示す
概略図、第２図は本う＾明に係る液相エピタキシャル成
長装置Ｗをｎくす概略図である。 図において、ｌ、２１は反応管、２．２５は設けＣｄＴ
ｅノ基板、７．８０はＹ１￥だめ、８，８１はＨｇｉ　
、（Ｃｄ）（Ｔｏの材料、９．　２２Ａ、　　２２Ｂは
ｕｇ、ｔｏ。 ２４は水銀収容容器、１１．８２は加熱炉、２８は窪み
、８８はｌ温度分布線図、Ａ、Ｃはスフイド方向を示す
矢印、■３は細く絞る置所を示す。FIG. 1 is a schematic view showing a conventional surface phase epitaxial growth apparatus/L/lengthwise apparatus, and FIG. 2 is a schematic view showing a liquid phase epitaxial growth apparatus W according to the present invention. In the figure, l, 21 are reaction tubes, 2.25 is a CdT
e-board, 7.80 is Y1 yen, 8,81 is Hgi
, (Cd) (To material, 9. 22A, 22B are ug, to. 24 is a mercury storage container, 11.82 is a heating furnace, 28 is a depression, 88 is a l temperature distribution diagram, A and C are sphide directions The arrow ``■3'' indicates the place to narrow down.

Claims (1)

【特許請求の範囲】[Claims] 一部を局部的に細く絞り、該絞った箇所に窪みを設けた
反応管内の前記細く絞った箇所を挾んで基板に対する結
晶成長用の治具と基板上に形成すべき結晶層の材料の易
蒸発性成分の収容容器とをそれぞれ設け、更に前記窪み
の部分の加熱温度が易蒸発性成分の収容容器の加熱温度
より低温になるようにした加熱炉を反応管の周囲に設け
たことを特徴とするエピタキシャル結晶成長装置。A part of the reaction tube is locally narrowly squeezed, and a depression is provided in the narrowed area.The narrowed area in the reaction tube is sandwiched between the crystal growth jig for the substrate and the material of the crystal layer to be formed on the substrate. A heating furnace is provided around the reaction tube so that the heating temperature of the recessed portion is lower than the heating temperature of the storage container of the easily evaporable component. Epitaxial crystal growth equipment.