JPS58171874A - Ultralow temperature electron device - Google Patents
Ultralow temperature electron deviceInfo
- Publication number
- JPS58171874A JPS58171874A JP5384282A JP5384282A JPS58171874A JP S58171874 A JPS58171874 A JP S58171874A JP 5384282 A JP5384282 A JP 5384282A JP 5384282 A JP5384282 A JP 5384282A JP S58171874 A JPS58171874 A JP S58171874A
- Authority
- JP
- Japan
- Prior art keywords
- cryogenic
- ultralow temperature
- signal transmission
- electromagnetic waves
- receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C13/00—Details of vessels or of the filling or discharging of vessels
- F17C13/005—Details of vessels or of the filling or discharging of vessels for medium-size and small storage vessels not under pressure
- F17C13/006—Details of vessels or of the filling or discharging of vessels for medium-size and small storage vessels not under pressure for Dewar vessels or cryostats
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2221/00—Handled fluid, in particular type of fluid
- F17C2221/01—Pure fluids
- F17C2221/016—Noble gases (Ar, Kr, Xe)
- F17C2221/017—Helium
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
- F17C2223/01—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the phase
- F17C2223/0146—Two-phase
- F17C2223/0153—Liquefied gas, e.g. LPG, GPL
- F17C2223/0161—Liquefied gas, e.g. LPG, GPL cryogenic, e.g. LNG, GNL, PLNG
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、極低温電子装置に係シ、特に超電導電子素子
(ジョセフソン素子など)によって形成したコンピュー
タの演算、メモリ回路のように極低温下に設置したもの
と、常温部に置かれ圧入出力装置との信号伝達に好適な
極低温電子装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to cryogenic electronic devices, particularly those installed at cryogenic temperatures such as computer calculation and memory circuits formed by superconducting electronic elements (such as Josephson elements), The present invention relates to a cryogenic electronic device that is placed in a room temperature area and is suitable for signal transmission with a press-in/output device.
従来の極低温電子装置について第1図を用いて説明する
。1は超電導電子素子(ジョセフソン素子など)で集積
した演算、メモリ回路部分であり、これは液体ヘリウム
などの極低温冷媒2に浸漬するなどによって冷却される
。極低温冷媒2は、注入弁3を介して注入される。弁4
はヘリウムガス回収弁を兼ねた安全弁である。演算、メ
モリ回路1と図示しない室温部に設置されたコンピュー
タの端末との信号の伝達は、多数の銅などの細線、また
はFRPなどの基板にパター化された多数の導線によっ
てなる信号伝達導線5を介して行われる。信号伝達導@
5は、液体ヘリウム2が蒸発したヘリウムガスによって
冷却され、室温部6よす液体ヘリウム温度部に侵入する
熱量を低減するようになっている。しかしながら、摺号
伝達導lIi!5は、前述の通り非常に多数の鋼線など
で形成されているので、蒸発ヘリウムガスによって冷却
しても、まだなお熱侵入量が大きいうそのため液体ヘリ
ウムの消費量が大きい。また、図示しないヘリウム冷凍
機の冷凍負荷が大きいという欠点があった。A conventional cryogenic electronic device will be explained with reference to FIG. Reference numeral 1 denotes a computation and memory circuit portion integrated with superconducting electronic elements (such as Josephson elements), which is cooled by immersion in a cryogenic coolant 2 such as liquid helium. Cryogenic refrigerant 2 is injected via injection valve 3 . valve 4
is a safety valve that also serves as a helium gas recovery valve. Signal transmission between the arithmetic and memory circuit 1 and a computer terminal (not shown) installed in a room temperature section is carried out by a signal transmission conductor 5 made of a large number of thin wires such as copper or a large number of conductive wires patterned on a substrate such as FRP. It is done through. Signal transmission @
The liquid helium 2 is cooled by the evaporated helium gas, thereby reducing the amount of heat that enters the room temperature section 6 and the liquid helium temperature section. However, the sign transmission guide lIi! 5 is formed of a very large number of steel wires as described above, so even if it is cooled by evaporated helium gas, there is still a large amount of heat intrusion, and therefore a large amount of liquid helium is consumed. Another drawback is that the refrigeration load of the helium refrigerator (not shown) is large.
本発明の目的は、液体ヘリウム温度部分への熱侵入が非
常に小さい極低温電子装置を提供することにある。It is an object of the present invention to provide a cryoelectronic device with very low heat intrusion into the liquid helium temperature section.
本発明の特徴は、従来のように直接電気導線によって、
室温部の装置と液体ヘリウム温度部分にある極低温電子
素子を接続し、電気信号のやりと9を行う代わりに、室
温部と常温部に設けた受信、発信装置間をレーザー、マ
イクロ波などの電磁波によって行うことにある。A feature of the present invention is that, unlike conventional methods, direct electric conductors
Instead of connecting the device in the room temperature section and the cryogenic electronic element in the liquid helium temperature section and transmitting electrical signals (9), a laser, microwave, etc. It is carried out using electromagnetic waves.
以下、本発明の一実施例を第2図により説明する。超酸
導電子素子などで集積した演算、メモリ回路1は、液体
ヘリウムなどの極低温冷媒2中に浸漬されている。この
演算、メモリ回路1は、やはシ極低温冷媒2中などの極
低温部に置かれた電磁波の受信、発信装置8に接続され
ている。一方、室温部にも電磁波の受信、発信装置9を
配置する。An embodiment of the present invention will be described below with reference to FIG. A calculation and memory circuit 1 integrated with superacid conductive electronic elements and the like is immersed in a cryogenic coolant 2 such as liquid helium. This calculation and memory circuit 1 is connected to an electromagnetic wave receiving and transmitting device 8 placed in a cryogenic region such as in a cryogenic refrigerant 2. On the other hand, an electromagnetic wave receiving and transmitting device 9 is also arranged in the room temperature section.
これら二つの受信、発信装置8.9によって、極低温部
と冨温部の信号の伝達を行う。このようにすれば、極低
温部と室温部は熱伝導的に無接触となる。また、レーザ
ーを使用する場合でも、ガラスファイバーなどで極低温
部と室温部を接続してもガラスファイバーの熱伝導率は
、鋼などに比べ只
2桁以上も低いので、熱伝導で極低温部に侵入する熱量
は従来に比べ著しく低減することができる。These two receiving and transmitting devices 8.9 transmit signals from the cryogenic part and the warm part. In this way, the cryogenic part and the room temperature part are not in contact with each other in terms of thermal conduction. In addition, even when using a laser, even if the cryogenic part and room temperature part are connected using glass fiber, etc., the thermal conductivity of glass fiber is more than two orders of magnitude lower than that of steel, etc. The amount of heat that enters can be significantly reduced compared to the conventional method.
また、電磁波により直接極低温へ侵入する熱量も小さい
。Also, the amount of heat that directly penetrates into the cryogenic temperature due to electromagnetic waves is small.
以上のように1本発明によれば、極低温電子装置の極低
温部への熱侵入量を著しく低減できる効果がある。As described above, according to one aspect of the present invention, there is an effect that the amount of heat intrusion into the cryogenic part of a cryogenic electronic device can be significantly reduced.
本発明によれば、極低温電子装置の常温部と極低温部の
電気信号伝達装置を介しての熱侵入を著しく低減できる
効果がある。According to the present invention, it is possible to significantly reduce heat intrusion through the electrical signal transmission device between the room temperature section and the cryogenic section of a cryogenic electronic device.
第1図は従来の極低温電子装置の一例を示す断面図、第
2図は本発明の極低温電子装置の一例を示す断面図でめ
る。
1・・・超電4ft子菓子などで集積した演算、メモリ
回路、2・・・極低温冷媒、5・・・信号伝達導線、7
・・・断熱材、8・・・極低温部の電磁波の受信、発信
装置、9・・・室温部の電磁波の受信、発信装置。
(、f・1,1FIG. 1 is a sectional view showing an example of a conventional cryoelectronic device, and FIG. 2 is a sectional view showing an example of the cryoelectronic device of the present invention. 1...Arithmetic operations and memory circuits integrated in superelectric 4ft sweets, etc., 2...Cryogenic refrigerant, 5...Signal transmission conductor, 7
... Insulating material, 8... Electromagnetic wave reception and transmission device in cryogenic temperature section, 9... Electromagnetic wave reception and transmission device in room temperature section. (, f・1,1
Claims (1)
する極低温冷媒と極低温下に置かれた前記集積回路と常
温部に設置される入出力装置との信号の伝達を行う信号
伝達装置から成る極低温電子装置において、前記極低温
部と常温部に設けた受信、発信装置間を電磁波によって
信号の伝達を行うことを特徴とする極低温電子装置。The integrated circuit of the element element is immersed in the superconductor 4' and a cryogenic refrigerant is used to cool it, and signals are transmitted between the integrated circuit placed at the cryogenic temperature and the input/output device installed in the normal temperature section. A cryogenic electronic device comprising a signal transmission device, characterized in that signals are transmitted between a receiving and transmitting device provided in the cryogenic part and the normal temperature part by electromagnetic waves.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5384282A JPS58171874A (en) | 1982-04-02 | 1982-04-02 | Ultralow temperature electron device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5384282A JPS58171874A (en) | 1982-04-02 | 1982-04-02 | Ultralow temperature electron device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58171874A true JPS58171874A (en) | 1983-10-08 |
Family
ID=12954026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5384282A Pending JPS58171874A (en) | 1982-04-02 | 1982-04-02 | Ultralow temperature electron device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58171874A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56105684A (en) * | 1980-01-29 | 1981-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive electric circuit |
-
1982
- 1982-04-02 JP JP5384282A patent/JPS58171874A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56105684A (en) * | 1980-01-29 | 1981-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive electric circuit |
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