JPS58141572A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58141572A
JPS58141572A JP2491382A JP2491382A JPS58141572A JP S58141572 A JPS58141572 A JP S58141572A JP 2491382 A JP2491382 A JP 2491382A JP 2491382 A JP2491382 A JP 2491382A JP S58141572 A JPS58141572 A JP S58141572A
Authority
JP
Japan
Prior art keywords
semiconductor device
diamond
diamond thin
film
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2491382A
Other languages
English (en)
Inventor
Toshiaki Ogata
尾形　俊昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP2491382A priority Critical patent/JPS58141572A/ja
Publication of JPS58141572A publication Critical patent/JPS58141572A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明はダイアモンド薄膜上しこ形成される半導体装置
の構造に関する。
従来、高温、高圧下でのみ形成可能であった人造ダイア
モンドが低圧下で形成する事が可能となり、ダイアモン
ド薄膜の形成ができるようになってきた。ダイアモンド
薄膜はそれ自身は１０１３Ｑｃｍの比抵抗を持つ絶縁物
であるが、６族または５族の原子を加える事により半導
体となる。シリコン薄膜と比較して熱伝導が優れており
、高集権半導体装置を製造するのに適しているとされ”
Ｃいる。
本発明はダイアモンド薄ｊ俣半導体装１ｄのゲート絶縁
ｊ模としてダイアモンドを用いる事（こまってダイアモ
ンド薄ｊ俟上の半導体装置の製造を容易にする事を目的
とする。
以下実施例によって詳しく説１叫する。
第１図は本発明の半導体装１ｄの断面図である。
基板１上に水音とメタンガスの混合ガスによっ゛Ｃダイ
アモンド薄膜２が形成され、ソース３．ドレイン４及び
チャネル領域５に不純物を拡散した後、ゲート絶縁膜と
して再度ダイアモンド薄膜６を形成する。ダイアモンド
をゲート絶ｈＪ＜　ＩＮとして１屯用する事によって、
他の絶縁ＩＮを使用した場合より表面準位の少ない安定
した特性の半導体装ｔｉｊ　ｋ製造する事が出来る。素
子間の分離は不純物を拡散しないダイアモンド薄ｊ漠に
よってなされるので高集積化が容易である。
本発明の半導体装置は特性が安定し、高集積であるので
人混な用途に使用が期待できる。
【図面の簡単な説明】
第１図は本元明の半導体装置の断面図である。 ２．６・・・・・・ダイアモンド薄膜 ３・・・・・・ソース ４・・・・・・ドレイン ５・・・・・・チャネル領域 以上 ン ／ 第１［Ｍｉ’

Claims (1)

    【特許請求の範囲】
  1. ダイアモンド薄膜上に形成された半導体装置において、
    ゲート絶縁膜はダイアモンドから成る事を特徴とする半
    導体装置。
JP2491382A 1982-02-18 1982-02-18 半導体装置 Pending JPS58141572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2491382A JPS58141572A (ja) 1982-02-18 1982-02-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2491382A JPS58141572A (ja) 1982-02-18 1982-02-18 半導体装置

Publications (1)

Publication Number Publication Date
JPS58141572A true JPS58141572A (ja) 1983-08-22

Family

ID=12151404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491382A Pending JPS58141572A (ja) 1982-02-18 1982-02-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS58141572A (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929986A (en) * 1987-09-25 1990-05-29 The United States Of America As Represented By The Secretary Of The Navy High power diamond traveling wave amplifier
EP0392461A2 (en) * 1989-04-12 1990-10-17 Sumitomo Electric Industries, Ltd. Thermistor made of diamond
JPH03160731A (ja) * 1989-11-18 1991-07-10 Toshiba Corp 半導体装置およびその製造方法
EP0450985A2 (en) * 1990-04-06 1991-10-09 Xerox Corporation Diamond thin film transistor
US5072264A (en) * 1988-05-24 1991-12-10 Jones Barbara L Diamond transistor and method of manufacture thereof
US5107315A (en) * 1990-03-13 1992-04-21 Kabushiki Kaisha Kobe Seiko Sho Mis type diamond field-effect transistor with a diamond insulator undercoat
US5171732A (en) * 1988-12-23 1992-12-15 Troy Investments, Inc. Method of making a josephson junction
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
US5298765A (en) * 1991-03-29 1994-03-29 Kabushiki Kaisha Kobe Seiko Sho Diamond Schottky gate type field-effect transistor
US5373172A (en) * 1990-01-26 1994-12-13 Kabushiki Kaisha Kobe Seiko Sho Semiconducting diamond light-emitting element
CN111211161A (zh) * 2020-01-15 2020-05-29 中山大学 一种双向散热的纵向氮化镓功率晶体管及其制备方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274268A (en) * 1987-04-01 1993-12-28 Semiconductor Energy Laboratory Co., Ltd. Electric circuit having superconducting layered structure
US4929986A (en) * 1987-09-25 1990-05-29 The United States Of America As Represented By The Secretary Of The Navy High power diamond traveling wave amplifier
US5072264A (en) * 1988-05-24 1991-12-10 Jones Barbara L Diamond transistor and method of manufacture thereof
US5171732A (en) * 1988-12-23 1992-12-15 Troy Investments, Inc. Method of making a josephson junction
EP0392461A2 (en) * 1989-04-12 1990-10-17 Sumitomo Electric Industries, Ltd. Thermistor made of diamond
JPH03160731A (ja) * 1989-11-18 1991-07-10 Toshiba Corp 半導体装置およびその製造方法
US5373172A (en) * 1990-01-26 1994-12-13 Kabushiki Kaisha Kobe Seiko Sho Semiconducting diamond light-emitting element
US5107315A (en) * 1990-03-13 1992-04-21 Kabushiki Kaisha Kobe Seiko Sho Mis type diamond field-effect transistor with a diamond insulator undercoat
US5099296A (en) * 1990-04-06 1992-03-24 Xerox Corporation Thin film transistor
EP0450985A2 (en) * 1990-04-06 1991-10-09 Xerox Corporation Diamond thin film transistor
US5252840A (en) * 1990-05-17 1993-10-12 Sumitomo Electric Industries, Ltd. Semiconductor device having differently doped diamond layers
US5298765A (en) * 1991-03-29 1994-03-29 Kabushiki Kaisha Kobe Seiko Sho Diamond Schottky gate type field-effect transistor
CN111211161A (zh) * 2020-01-15 2020-05-29 中山大学 一种双向散热的纵向氮化镓功率晶体管及其制备方法

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